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    PN JUNCTION DIODE TEMPERATURE Search Results

    PN JUNCTION DIODE TEMPERATURE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CEZ6V2
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, ESC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ6V8
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CEZ5V6
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, ESC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ6V2
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ30V
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 30 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    PN JUNCTION DIODE TEMPERATURE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diode FBAS70TW SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS WBFBP-06C 2x2×0.5 unit: mm DESCRIPTION Silicon epitaxial planar PN Junction Guard Ring for Schottky Diode FEATURES


    Original     		WBFBP-06C FBAS70TW WBFBP-06C PDF

    transistor k43

    Abstract: FBAS40TW marking k43 diode
    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diode FBAS40TW SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS WBFBP-06C 2x2×0.5 unit: mm DESCRIPTION Silicon epitaxial planar PN Junction Guard Ring for Schottky Diode FEATURES


    Original     		WBFBP-06C FBAS40TW WBFBP-06C transistor k43 FBAS40TW marking k43 diode PDF

    K73 Package

    Abstract: FBAS70TW
    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diode FBAS70TW SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS WBFBP-06C 2x2×0.5 unit: mm DESCRIPTION Silicon epitaxial planar PN Junction Guard Ring for Schottky Diode FEATURES


    Original     		WBFBP-06C FBAS70TW WBFBP-06C K73 Package FBAS70TW PDF

    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diode FBAS40TW SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS WBFBP-06C 2x2×0.5 unit: mm DESCRIPTION Silicon epitaxial planar PN Junction Guard Ring for Schottky Diode FEATURES


    Original     		WBFBP-06C FBAS40TW WBFBP-06C PDF

    pn junction diode application

    Abstract: power Schottky bridge FBAS70DW-04 marking K74
    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diode FBAS70DW-04 SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS WBFBP-06C 2x2×0.5 unit: mm DESCRIPTION Silicon epitaxial planar PN Junction Guard Ring for Schottky Diode FEATURES


    Original     		WBFBP-06C FBAS70DW-04 WBFBP-06C pn junction diode application power Schottky bridge FBAS70DW-04 marking K74 PDF

    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diode FBAS70DW-04 SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS WBFBP-06C 2x2×0.5 unit: mm DESCRIPTION Silicon epitaxial planar PN Junction Guard Ring for Schottky Diode FEATURES


    Original     		WBFBP-06C FBAS70DW-04 WBFBP-06C PDF

    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diode FBAS40DW-04 SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS WBFBP-06C 2x2×0.5 unit: mm DESCRIPTION Silicon epitaxial planar PN Junction Guard Ring for Schottky Diode FEATURES


    Original     		WBFBP-06C FBAS40DW-04 WBFBP-06C PDF

    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diode FBAS40BRW SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS WBFBP-06C 2x2×0.5 unit: mm DESCRIPTION Silicon epitaxial planar PN Junction Guard Ring for Schottky Diode 1 FEATURES


    Original     		WBFBP-06C FBAS40BRW WBFBP-06C PDF

    k44 transistor

    Abstract: transistor k44 FBAS40DW-04
    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diode FBAS40DW-04 SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS WBFBP-06C 2x2×0.5 unit: mm DESCRIPTION Silicon epitaxial planar PN Junction Guard Ring for Schottky Diode FEATURES


    Original     		WBFBP-06C FBAS40DW-04 WBFBP-06C k44 transistor transistor k44 FBAS40DW-04 PDF

    BAS70BRW

    Abstract: FBAS70BRW
    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diode FBAS70BRW SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS WBFBP-06C 2x2×0.5 unit: mm DESCRIPTION Silicon epitaxial planar PN Junction Guard Ring for Schottky Diode 1 FEATURES


    Original     		WBFBP-06C FBAS70BRW WBFBP-06C BAS70BRW BAS70BRW FBAS70BRW PDF

    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diode FBAS70BRW SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS WBFBP-06C 2x2×0.5 unit: mm DESCRIPTION Silicon epitaxial planar PN Junction Guard Ring for Schottky Diode 1 FEATURES


    Original     		WBFBP-06C FBAS70BRW WBFBP-06C BAS70BRW PDF

    marking k47

    Abstract: SCHOTTKY BARRIER BRIDGE RECTIFIERS FBAS40BRW
    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diode FBAS40BRW SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS WBFBP-06C 2x2×0.5 unit: mm DESCRIPTION Silicon epitaxial planar PN Junction Guard Ring for Schottky Diode 1 FEATURES


    Original     		WBFBP-06C FBAS40BRW WBFBP-06C marking k47 SCHOTTKY BARRIER BRIDGE RECTIFIERS FBAS40BRW PDF

    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diode FBAS70DW-06 WBFBP-06C SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS 2x2×0.5 unit: mm DESCRIPTION Silicon epitaxial planar PN Junction Guard Ring for Schottky Diode 1 FEATURES


    Original     		WBFBP-06C FBAS70DW-06 WBFBP-06C PDF

    BAT41

    Abstract: LL41
    Contextual Info: BAT41 Small-Signal Diode Schottky Diode Features For general purpose applications. This diode features low turn-on voltage and high breakdown voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges


    Original     		BAT41 DO-35 100uA 100OC 200mA 300uS BAT41 LL41 PDF

    FBAS70DW-05

    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diode FBAS70DW-05 SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS WBFBP-06C 2x2×0.5 unit: mm DESCRIPTION Silicon epitaxial planar PN Junction Guard Ring for Schottky Diode 1 FEATURES


    Original     		WBFBP-06C FBAS70DW-05 WBFBP-06C FBAS70DW-05 PDF

    Marking k45

    Abstract: FBAS40DW-05 k45 diode diode k45
    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diode FBAS40DW-05 SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS WBFBP-06C 2x2×0.5 unit: mm DESCRIPTION Silicon epitaxial planar PN Junction Guard Ring for Schottky Diode 1 FEATURES


    Original     		WBFBP-06C FBAS40DW-05 WBFBP-06C Marking k45 FBAS40DW-05 k45 diode diode k45 PDF

    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diode FBAS40DW-05 SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS WBFBP-06C 2x2×0.5 unit: mm DESCRIPTION Silicon epitaxial planar PN Junction Guard Ring for Schottky Diode 1 FEATURES


    Original     		WBFBP-06C FBAS40DW-05 WBFBP-06C PDF

    FBAS70DW-06

    Abstract: pn junction diode application
    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diode FBAS70DW-06 WBFBP-06C SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS 2x2×0.5 unit: mm DESCRIPTION Silicon epitaxial planar PN Junction Guard Ring for Schottky Diode 1 FEATURES


    Original     		WBFBP-06C FBAS70DW-06 WBFBP-06C FBAS70DW-06 pn junction diode application PDF

    BAT46 sod80

    Abstract: BAT46 C 704 diode MINI-MELF DIODE green CATHODE DIODE WITH SOD CASE
    Contextual Info: L L 46 Small-Signal Diode Schottky Diode Features For general purpose applications. This diode features low turn-on voltage and high break-down voltage. This device is protected by a PN junction guardring against excessive voltage, such as electrostatic discharges.


    Original     		DO-35 BAT46. OD-80) 100uA 300us, 250mA BAT46 sod80 BAT46 C 704 diode MINI-MELF DIODE green CATHODE DIODE WITH SOD CASE PDF

    Contextual Info: BAT41 Small-Signal Diode Schottky Diode Features ‹ For general purpose applications. ‹ This diode features low turn-on voltage and high breakdown voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges


    Original     		BAT41 DO-35 100uA 100OC 200mA 300uS PDF

    Contextual Info: Zowie Technology Corporation Schottky Barrier Diode 30 VOLTS SCHOTTKY BARRIER DETECTOR AND SWITCHING DIODE Lead free product Halogen-free type * Extremely Fast Switching Speed * Low Forward Voltage * PN Junction Guard Ring for Transient and ESD Protection.


    Original     		BAT54WGH OT-323 PDF

    Contextual Info: BAT86 VISHAY Vishay Semiconductors Schottky Diode Features • For general purpose applications. • This diode features low turn-on voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.


    Original     		BAT86 BAS86. DO-35 D-74025 03-Feb-04 PDF

    Contextual Info: BAT86 VISHAY Vishay Semiconductors Schottky Diode Features • For general purpose applications. • This diode features low turn-on voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.


    Original     		BAT86 BAS86. DO-35 08-Apr-05 PDF

    Contextual Info: BAT86 VISHAY Vishay Semiconductors Schottky Diode Features • For general purpose applications. • This diode features low turn-on voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.


    Original     		BAT86 BAS86. DO-35 D-74025 05-Apr-04 PDF