SOT23 MARK Y3
Abstract: NPN Transistor PN100A PN100A
Text: PN100 / MMBT100 / PN100A / MMBT100A PN100 PN100A MMBT100 MMBT100A C E C B TO-92 SOT-23 E B Mark: NA / NA1 NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 10.
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PN100
MMBT100
PN100A
MMBT100A
PN100A
OT-23
SOT23 MARK Y3
NPN Transistor PN100A
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PN100
Abstract: No abstract text available
Text: PN100/PN100A/MMBT100/MMBT100A NPN General Purpose Amplifier • • This device is designed for general purpose amplifier applications at collector currents to 300mA. Sourced from process 10. C E TO-92 1 B SOT-23 1. Emitter 2. Base 3. Collector Mark: PN100/PN100A
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PN100/PN100A/MMBT100/MMBT100A
300mA.
OT-23
PN100/PN100A
PN100/PN100A/MMBT100/MMBT100A
PN100
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NPN Transistor PN100A
Abstract: CBVK741B019 F63TNR MMBT100 MMBT100A PN100 PN100A PN2222N PN100 TRANSISTOR
Text: PN100 / MMBT100 / PN100A / MMBT100A PN100 PN100A MMBT100 MMBT100A C E C B TO-92 SOT-23 E B Mark: NA / NA1 NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 10.
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PN100
MMBT100
PN100A
MMBT100A
PN100
PN100A
MMBT100
OT-23
NPN Transistor PN100A
CBVK741B019
F63TNR
MMBT100A
PN2222N
PN100 TRANSISTOR
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PN100
Abstract: PN100- p pn100a npn general purpose transistors application NPN Transistor PN100A PN100 datasheet MMBT100 MMBT100A PN-100
Text: PN100/PN100A/MMBT100/MMBT100A NPN General Purpose Amplifier • This device is designed for general purpose amplifier applications at collector currents to 300mA. • Sourced from process 10. C E TO-92 B 1 1. Emitter 2. Base 3. Collector Mark: PN100/PN100A
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PN100/PN100A/MMBT100/MMBT100A
300mA.
PN100/PN100A
OT-23
PN100/PN100A/MMBT100/MMBT100A
PN100
PN100- p
pn100a
npn general purpose transistors application
NPN Transistor PN100A
PN100 datasheet
MMBT100
MMBT100A
PN-100
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2N3704
Abstract: equivalent transistor 2n3704 F63TNR PN100 PN2222N CBVK741B019 2N3704 circuit
Text: 2N3704 2N3704 B C TO-92 E NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. Absolute Maximum Ratings* Symbol
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2N3704
PN100
2N3704
equivalent transistor 2n3704
F63TNR
PN2222N
CBVK741B019
2N3704 circuit
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2N3704
Abstract: TO-92 Package Dimensions equivalent transistor 2n3704 PN100
Text: 2N3704 2N3704 B C TO-92 E NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. Absolute Maximum Ratings* Symbol
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2N3704
PN100
2N3704
TO-92 Package Dimensions
equivalent transistor 2n3704
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2N3704
Abstract: equivalent transistor 2n3704 PN100
Text: 2N3704 2N3704 B C TO-92 E NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. Absolute Maximum Ratings* Symbol
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2N3704
PN100
2N3704
equivalent transistor 2n3704
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Untitled
Abstract: No abstract text available
Text: 2N5172 2N5172 B C TO-92 E NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. Absolute Maximum Ratings* Symbol
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2N5172
PN100
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2N3859A
Abstract: PN100
Text: 2N3859A 2N3859A NPN General Purpose Amplifier • This device designed for use as general purpose amplifier and switches requiring collector currents to 300mA. • Sourced from Process 10. • See PN100 for characteristics. TO-92 1 1. Emitter 2. Collector 3. Base
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2N3859A
300mA.
PN100
2N3859A
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Untitled
Abstract: No abstract text available
Text: 2N3859A 2N3859A NPN General Purpose Amplifier • This device designed for use as general purpose amplifier and switches requiring collector currents to 300mA. • Sourced from Process 10. • See PN100 for characteristics. TO-92 1 1. Emitter 2. Collector 3. Base
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2N3859A
300mA.
PN100
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2N3704
Abstract: equivalent transistor 2n3704 PN100 2N3704 circuit
Text: 2N3704 2N3704 NPN General Purpose Amplifier • This device designed for use as general purpose amplifier and switches requiring collector currents to 300mA. • Sourced from Process 10. • See PN100 for characteristics. TO-92 1 1. Emitter 2. Collector 3. Base
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2N3704
300mA.
PN100
2N3704
equivalent transistor 2n3704
2N3704 circuit
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MPS8098
Abstract: CBVK741B019 F63TNR PN100 PN2222N
Text: MPS8098 C TO-92 BE NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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MPS8098
PN100
MPS8098
CBVK741B019
F63TNR
PN2222N
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PN3565
Abstract: CBVK741B019 F63TNR PN100 PN2222N
Text: PN3565 C TO-92 BE NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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PN3565
PN100
PN3565
CBVK741B019
F63TNR
PN2222N
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PN3643
Abstract: CBVK741B019 F63TNR PN100 PN2222N
Text: PN3643 C TO-92 BE NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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PN3643
PN100
PN3643
CBVK741B019
F63TNR
PN2222N
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PN4141
Abstract: CBVK741B019 F63TNR PN100 PN2222N TO-92 Package Dimensions
Text: PN4141 C TO-92 BE NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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PN4141
PN100
PN4141
CBVK741B019
F63TNR
PN2222N
TO-92 Package Dimensions
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2N3859A
Abstract: 2N3859 F63TNR PN100 PN2222N CBVK741B019
Text: 2N3859A E TO-92 CB NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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2N3859A
PN100
2N3859A
2N3859
F63TNR
PN2222N
CBVK741B019
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2N5172
Abstract: PN100
Text: 2N5172 2N5172 B C TO-92 E NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. Absolute Maximum Ratings* Symbol
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2N5172
PN100
2N5172
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2N5172
Abstract: CBVK741B019 F63TNR PN100 PN2222N 2n5172 transistor
Text: 2N5172 2N5172 B C TO-92 E NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. Absolute Maximum Ratings* Symbol
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2N5172
PN100
2N5172
CBVK741B019
F63TNR
PN2222N
2n5172 transistor
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MMBT100
Abstract: MMBT100A PN100 PN100A
Text: NPN General Purpose Amplifier 3 • This device is designed for general purpose amplifier applications at collector currents to 300mA. • Sourced from process 10. 2 TO-92 1 1. Emitter 2. Base 3. Collector Mark: PN100/PN100A 1 SOT-23 1. Base 2. Emitter 3. Collector
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300mA.
PN100/PN100A
OT-23
MMBT100
MMBT100A
PN100
PN100A
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2N3704
Abstract: No abstract text available
Text: 2N3704 2N3704 NPN General Purpose Amplifier • This device designed for use as general purpose amplifier and switches requiring collector currents to 300mA. • Sourced from Process 10. • See PN100 for characteristics. TO-92 1 1. Emitter 2. Collector 3. Base
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2N3704
300mA.
PN100
2N3704
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transistor BC 157
Abstract: TIS97 CBVK741B019 F63TNR PN100 PN2222N
Text: TIS97 E TO-92 BC NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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TIS97
PN100
transistor BC 157
TIS97
CBVK741B019
F63TNR
PN2222N
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Untitled
Abstract: No abstract text available
Text: D824 Flanged diaphragm seal with specific materials Main Features Pressure range from 160 mbar to 400 bar Diaphragm in specific materials Temperature -40°C ….400°C Class 150 to 2500 NPS 2" to 4" PN10 to PN100 DN50 to DN100
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PN100
DN100
B16-5
B16-5
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TIS98
Abstract: No abstract text available
Text: E^hOhOO OETTDiï^ I NPN General Purpose Amplifiers and Switches Device No. PN100 9TT PN100A Case Style TO-92 92 TO-92 (92) V CBO V CEO v EBO (V) Min (V) Min (V) Min 75 45 6 75 45 6 (continued) ICES * ^CBO (nA) Max 50 50 V @ hFE (V) Min 60 80 100 100 100
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PN100
TIS98
2N4410
2N5551
2N5830
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2N5551 CJ
Abstract: No abstract text available
Text: This I tr Material Ln a b-1 t-1 U a NPN General Purpose Amplifiers and Switches Device No. Case Style ^C B O V CEO Copyrighted V Min (V) Min (V) Min 75 45 6 CD jr PN100 CD TO-92 (92) vEBO (continued) ICES* *CBO (nA) Max 50 V @ CB hFE (V) Min 60 80 100 100
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oo404tiS
2N5551 CJ
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