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    PN918 TRANSISTOR Search Results

    PN918 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    PN918 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PN918

    Abstract: transistor marking T93 MMST918 T146
    Text: MMST918 / PN918 Transistors NPN High Frequency Transistor MMST918 / PN918 zExternal dimensions Unit : mm zFeatures 1) High current gain-bandwidth product fT=600MHz 2.9±0.2 MMST918 1.1+0.2 −0.1 1.9±0.2 0.8±0.1 0.95 0.95 MMST918 PN918 SMT3 RVX TO-92 −


    Original     		PDF MMST918 PN918 600MHz MMST918 SC-59 PN918 transistor marking T93 T146

    Untitled

    Abstract: No abstract text available
    Text: PN918 / MMBT918 MMBT918 PN918 C E C B TO-92 B SOT-23 E Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings*


    Original     		PDF PN918 MMBT918 PN918 OT-23

    y 331 Transistor

    Abstract: No abstract text available
    Text: PN918 / MMBT918 MMBT918 PN918 C C B E TO-92 B SOT-23 E Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings*


    Original     		PDF PN918 MMBT918 PN918 OT-23 y 331 Transistor

    Untitled

    Abstract: No abstract text available
    Text: PN918 NPN SILICON RF TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR PN918 type is an NPN silicon RF transistor, manufactured by the epitaxial planar process and designed for high frequency amplifier and oscillator applications.


    Original     		PDF PN918 PN918 100MHz 500MHz 200MHz 60kHz 11-September

    Untitled

    Abstract: No abstract text available
    Text: PN918 / MMBT918 MMBT918 PN918 C E C B TO-92 B SOT-23 E Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings*


    Original     		PDF PN918 MMBT918 PN918 OT-23

    CBVK741B019

    Abstract: F63TNR MMBT918 PN2222N PN918 RF 107 transistor tc 144
    Text: PN918 / MMBT918 MMBT918 PN918 C E C B TO-92 B SOT-23 E Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings*


    Original     		PDF PN918 MMBT918 PN918 OT-23 CBVK741B019 F63TNR MMBT918 PN2222N RF 107 transistor tc 144

    mmbt918

    Abstract: PN918 Intermediate frequency Semiconductor RF CBVK741B019 F63TNR PN2222N npn transistor wc 14inch
    Text: PN918 / MMBT918 MMBT918 PN918 C E C B TO-92 B SOT-23 E Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings*


    Original     		PDF PN918 MMBT918 PN918 OT-23 mmbt918 Intermediate frequency Semiconductor RF CBVK741B019 F63TNR PN2222N npn transistor wc 14inch

    2N3663

    Abstract: CBVK741B019 F63TNR PN2222N PN918
    Text: 2N3663 2N3663 B TO-92 CE NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. See PN918 for characteristics. Absolute Maximum Ratings*


    Original     		PDF 2N3663 PN918 2N3663 CBVK741B019 F63TNR PN2222N

    2N5770

    Abstract: PN918
    Text: 2N5770 C TO-92 BE NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. See PN918 for characteristics. Absolute Maximum Ratings* Symbol


    Original     		PDF 2N5770 PN918 2N5770

    2N3663

    Abstract: PN918
    Text: 2N3663 E TO-92 CB NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. See PN918 for characteristics. Absolute Maximum Ratings* Symbol


    Original     		PDF 2N3663 PN918 2N3663

    Untitled

    Abstract: No abstract text available
    Text: 2N3663 2N3663 B TO-92 CE NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. See PN918 for characteristics. Absolute Maximum Ratings*


    Original     		PDF 2N3663 PN918

    2N5770

    Abstract: No abstract text available
    Text: 2N5770 C TO-92 BE NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. See PN918 for characteristics. Absolute Maximum Ratings* Symbol


    Original     		PDF 2N5770 PN918 2N5770

    PN3563

    Abstract: CBVK741B019 F63TNR PN2222N PN918
    Text: PN3563 PN3563 C B TO-92 E NPN RF Amplifier This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. See PN918 for characteristics. Absolute Maximum Ratings*


    Original     		PDF PN3563 PN918 PN3563 CBVK741B019 F63TNR PN2222N

    PN3563

    Abstract: PN2222N CBVK741B019 F63TNR PN918
    Text: PN3563 PN3563 C B TO-92 E NPN RF Amplifier This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. See PN918 for characteristics. Absolute Maximum Ratings*


    Original     		PDF PN3563 PN918 PN3563 PN2222N CBVK741B019 F63TNR

    MMBT918

    Abstract: No abstract text available
    Text: i, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 PN918 MMBT918 TO-92 SOT-23 Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range.


    Original     		PDF PN918 MMBT918 OT-23 100MHz MMBT918

    PN918

    Abstract: 2n918 transistor SOT23 2N918 2n918 transistor PN918 transistor 2N918 National
    Text: 2N918/PN918/MMBT918 National ISemiconductor PN918 2N918 MMBT918 7KXA hhJJ m /M U Cg TO-7 2 T0 72 TO “236 TO-9 2 SOT-23 T L /G /1 0 1 0 0 -5 C T L /G /1 0 1 0 0 -1 2 T L /G /1 0 1 0 0 -1 NPN RF Transistor Electrical Characteristics t a = 25°c unless otherwise noted


    OCR Scan     		PDF 2N918/PN918/MMBT918 2N918 PN918 MMBT918 OT-23) 2N918/PN918/MMBT9I8 PN918 2n918 transistor SOT23 2n918 transistor PN918 transistor 2N918 National

    2N3663

    Abstract: NPN RF Amplifier PN918
    Text: SEMICONDUCTOR ¡m 2N3663 NPN RF Transistor T his device is designed for use as RF amplifiers, oscillators and m ultipliers with collector currents in the 1.0 m A to 30 m A range. Sourced from Process 43. See PN918 for characteristics. Absolute Maximum Rstinys


    OCR Scan     		PDF 2N3663 PN918 2N3663 NPN RF Amplifier

    Untitled

    Abstract: No abstract text available
    Text: S E M IC O N D U C T O R 2N3663 NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. See PN918 for characteristics. Absolute Maximum RatinQS


    OCR Scan     		PDF 2N3663 PN918

    Untitled

    Abstract: No abstract text available
    Text: S E M IC O N D U C T O R 2N5770 NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. See PN918 for characteristics. Absolute Maximum RatinQS


    OCR Scan     		PDF 2N5770 PN918

    TIS92

    Abstract: TIS90 TIS97 MA3243C PN7055 PN918 PN930 TIS86 TIS87 TIS98
    Text: TO-92 Plastic Package Transistors NPN Electrical Characteristics (Ta=25°C, U nless Otherwise Specified) Maximum Ratings Type No. ^CBO PN7055 (V) Min 220 ^CEO ^ESO Pd W M Min Min @Tc=25"c 220 7 M 0.625 'c (A) ta o m ^CB 0.1 ^CE Min 150 PN918 30 15 3 0.625


    OCR Scan     		PDF PN7055 PN918 PN930 TIS86 O-92-2 TIS87 TIS92 TIS90 TIS97 MA3243C TIS98

    Untitled

    Abstract: No abstract text available
    Text: Discrete POWER & Signal Technologies S iM IC D N P U C T O B MMBT918 PN918 C < \' TO-92 SOT-23 BE B Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range.


    OCR Scan     		PDF MMBT918 PN918 OT-23 400il, PN918

    2N5770

    Abstract: No abstract text available
    Text: S E M IC O N D U C T O R rivi 2N5770 NPN RF Transistor T his device is designed for use as RF amplifiers, oscillators and m ultipliers with collector currents in the 1.0 m A to 30 m A range. Sourced from Process 43. See PN918 for characteristics. Absolute Maximum RâtinÇjS


    OCR Scan     		PDF 2N5770 PN918 ilit200 2N5770

    NPN RF Amplifier

    Abstract: MMBT918 PN918
    Text: B E M ir r N r j ç t t MMBT918 PN918 SOT-23 V B M a rk : 3 B NPN RF Transistor T his device is designed for use as RF amplifiers, oscillators and m ultipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings*


    OCR Scan     		PDF PN918 MMBT91Ã OT-23 NPN RF Amplifier MMBT918 PN918

    PN918 transistor

    Abstract: No abstract text available
    Text: S E M IC O N D U Q T O H PN918 MMBT918 Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and m ultipliers with collector currents in the 1.0 m A to 30 m A range. Sourced from Process 43. Absolute Maximum RâtinÇjS Symbol


    OCR Scan     		PDF PN918 MMBT918 PN918 PN918 transistor