PN918 TRANSISTOR Search Results

PN918

Abstract: transistor marking T93 MMST918 T146
Contextual Info: MMST918 / PN918 Transistors NPN High Frequency Transistor MMST918 / PN918 zExternal dimensions Unit : mm zFeatures 1) High current gain-bandwidth product fT=600MHz 2.9±0.2 MMST918 1.1+0.2 −0.1 1.9±0.2 0.8±0.1 0.95 0.95 MMST918 PN918 SMT3 RVX TO-92 −

Contextual Info: PN918 / MMBT918 MMBT918 PN918 C E C B TO-92 B SOT-23 E Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings*

y 331 Transistor

Contextual Info: PN918 / MMBT918 MMBT918 PN918 C C B E TO-92 B SOT-23 E Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings*

Contextual Info: PN918 NPN SILICON RF TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR PN918 type is an NPN silicon RF transistor, manufactured by the epitaxial planar process and designed for high frequency amplifier and oscillator applications.

Contextual Info: PN918 / MMBT918 MMBT918 PN918 C E C B TO-92 B SOT-23 E Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings*

CBVK741B019

Abstract: F63TNR MMBT918 PN2222N PN918 RF 107 transistor tc 144
Contextual Info: PN918 / MMBT918 MMBT918 PN918 C E C B TO-92 B SOT-23 E Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings*

mmbt918

Abstract: PN918 Intermediate frequency Semiconductor RF CBVK741B019 F63TNR PN2222N npn transistor wc 14inch
Contextual Info: PN918 / MMBT918 MMBT918 PN918 C E C B TO-92 B SOT-23 E Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings*

PN918

Abstract: 2n918 transistor SOT23 2N918 2n918 transistor PN918 transistor 2N918 National
Contextual Info: 2N918/PN918/MMBT918 National ISemiconductor PN918 2N918 MMBT918 7KXA hhJJ m /M U Cg TO-7 2 T0 72 TO “236 TO-9 2 SOT-23 T L /G /1 0 1 0 0 -5 C T L /G /1 0 1 0 0 -1 2 T L /G /1 0 1 0 0 -1 NPN RF Transistor Electrical Characteristics t a = 25°c unless otherwise noted

2N3663

Abstract: CBVK741B019 F63TNR PN2222N PN918
Contextual Info: 2N3663 2N3663 B TO-92 CE NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. See PN918 for characteristics. Absolute Maximum Ratings*

2N3663

Abstract: NPN RF Amplifier PN918
Contextual Info: SEMICONDUCTOR ¡m 2N3663 NPN RF Transistor T his device is designed for use as RF amplifiers, oscillators and m ultipliers with collector currents in the 1.0 m A to 30 m A range. Sourced from Process 43. See PN918 for characteristics. Absolute Maximum Rstinys

2N5770

Abstract: PN918
Contextual Info: 2N5770 C TO-92 BE NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. See PN918 for characteristics. Absolute Maximum Ratings* Symbol

2N3663

Abstract: PN918
Contextual Info: 2N3663 E TO-92 CB NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. See PN918 for characteristics. Absolute Maximum Ratings* Symbol

Contextual Info: 2N3663 2N3663 B TO-92 CE NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. See PN918 for characteristics. Absolute Maximum Ratings*

2N5770

Contextual Info: 2N5770 C TO-92 BE NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. See PN918 for characteristics. Absolute Maximum Ratings* Symbol

PN3563

Abstract: PN2222N CBVK741B019 F63TNR PN918
Contextual Info: PN3563 PN3563 C B TO-92 E NPN RF Amplifier This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. See PN918 for characteristics. Absolute Maximum Ratings*

PN918

Abstract: MMBT918 mark 3b RF TRANSISTOR SOT23 5 P431 PN918 transistor
Contextual Info: MMBT918 PN918 C E C B TO-92 SOT-23 E B Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings* Symbol

Contextual Info: S E M IC O N D U C T O R 2N3663 NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. See PN918 for characteristics. Absolute Maximum RatinQS

Contextual Info: S E M IC O N D U C T O R 2N5770 NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. See PN918 for characteristics. Absolute Maximum RatinQS

MMBT918

Contextual Info: i, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 PN918 MMBT918 TO-92 SOT-23 Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range.

TIS92

Abstract: TIS90 TIS97 MA3243C PN7055 PN918 PN930 TIS86 TIS87 TIS98
Contextual Info: TO-92 Plastic Package Transistors NPN Electrical Characteristics (Ta=25°C, U nless Otherwise Specified) Maximum Ratings Type No. ^CBO PN7055 (V) Min 220 ^CEO ^ESO Pd W M Min Min @Tc=25"c 220 7 M 0.625 'c (A) ta o m ^CB 0.1 ^CE Min 150 PN918 30 15 3 0.625

Contextual Info: Discrete POWER & Signal Technologies S iM IC D N P U C T O B MMBT918 PN918 C < \' TO-92 SOT-23 BE B Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range.

2N5770

Contextual Info: S E M IC O N D U C T O R rivi 2N5770 NPN RF Transistor T his device is designed for use as RF amplifiers, oscillators and m ultipliers with collector currents in the 1.0 m A to 30 m A range. Sourced from Process 43. See PN918 for characteristics. Absolute Maximum RâtinÇjS

NPN RF Amplifier

Abstract: MMBT918 PN918
Contextual Info: B E M ir r N r j ç t t MMBT918 PN918 SOT-23 V B M a rk : 3 B NPN RF Transistor T his device is designed for use as RF amplifiers, oscillators and m ultipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings*

PN918 transistor

Contextual Info: S E M IC O N D U Q T O H PN918 MMBT918 Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and m ultipliers with collector currents in the 1.0 m A to 30 m A range. Sourced from Process 43. Absolute Maximum RâtinÇjS Symbol