PNP 1.5 AMPS POWER TRANSISTOR Search Results

TRANSISTOR AH-16

Abstract: AH-16 transistor TRANSISTOR AH-10 ah-16 sot-223 body marking D K Q F AH MARKING SOT223 Transistor AH10 ah16 AH-16 npn BCP53-10T1
Contextual Info: BCP53 Series PNP Silicon Epitaxial Transistors This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. •ăHigh Current: 1.5 Amps

TRANSISTOR AH-16

Abstract: AH-16 transistor TRANSISTOR AH-10 AH-16 npn AH MARKING SOT223 ah-16 sot 223 marking code AH BCP53-16T1G BCP53-10T1G Transistor AH10
Contextual Info: BCP53 Series PNP Silicon Epitaxial Transistors This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. •ăHigh Current: 1.5 Amps

TRANSISTOR AH-16

Abstract: BCP53 AH MARKING SOT223 ah-16 TRANSISTOR BCP53 BCP53T1G AH-16 npn BCP53-10T1 BCP53-10T1G BCP53-16T1
Contextual Info: BCP53 Series PNP Silicon Epitaxial Transistors This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. •ăHigh Current: 1.5 Amps

TRANSISTOR AH-16

Abstract: bcp53 SOT-223 BCP53-16T1 sot 223 marking code AH BCP53 AH-16 transistor bcp53 transistor datasheet TRANSISTOR AH-10 BCP53-10T1 BCP53-10T1G
Contextual Info: BCP53 Series PNP Silicon Epitaxial Transistors This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. •ăHigh Current: 1.5 Amps

2N1202

Abstract: 539A 5392n 2n1203 2N1501 SO45 2N2266 5402N Germanium power 2N539A
Contextual Info: germanium power transistors 143 PNP ALLOY TRANSISTORS 3.5-5 Amp NORMALIZED CURRENT GAIN 200 - ,- . . 175 .!. ~ w ~ 150 ~ z. ;( 125 C) ~ Z ~ 100 GI: ~ - VCEo-2V ~ u 75 50 o -Q5 -1.0 -1.5 -. -3.0 -2.5 -2.0 COLLECTOR CURRENT, IC (AMPS)

Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX958 ISSUE 3 – JUNE 94 FEATURES * 0.5 Amp continuous current * Up to 1.5 Amps peak current * Very low saturation voltage * Excellent gain characteristics up to 1 Amp * Spice model available C B E E-Line

NPN 200 VOLTS 20 Amps POWER TRANSISTOR

Abstract: NPN 1.5 AMPS POWER TRANSISTOR MJW-1302A
Contextual Info: MJW3281A NPN MJW1302A (PNP) Preferred Devices Complementary NPN−PNP Silicon Power Bipolar Transistors The MJW3281A and MJW1302A are PowerBase t power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency

MJL3281A

Contextual Info: MJL3281A NPN MJL1302A (PNP) Preferred Devices Complementary NPN−PNP Silicon Power Bipolar Transistors The MJL3281A and MJL1302A are PowerBaset power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency

MJW21196

Contextual Info: MJW21195 PNP MJW21196 (NPN) Preferred Devices Silicon Power Transistors The MJW21195 and MJW21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http://onsemi.com

MJW2119x

Contextual Info: MJW21193 PNP MJW21194 (NPN) Preferred Devices Silicon Power Transistors The MJW21193 and MJW21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http://onsemi.com

MJW-1302A

Abstract: NPN 200 VOLTS 20 Amps POWER TRANSISTOR 10000 npn MJW1302A MJW3281A
Contextual Info: MJW3281A NPN MJW1302A (PNP) Preferred Devices Complementary NPN-PNP Silicon Power Bipolar Transistors The MJW3281A and MJW1302A are PowerBase t power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency

NJW1302G

Abstract: njw3281 NJW3281G
Contextual Info: NJW3281G NPN NJW1302G (PNP) Preferred Devices Product Preview Complementary NPN-PNP Silicon Power Bipolar Transistors http://onsemi.com The NJW3281G and NJW1302G are PowerBase t power transistors for high power audio, disk head positioners and other linear

NSP5665

Abstract: sat 1205
Contextual Info: Bipolar Power Transistors Page 1 of 12 Next Page Home Package Device Type VCEO sus Volts IC (max) Amps PD@ 25° C Watts fT MHZ NPN TO-39 2N1479 * 40 1.5 20/60@.2/4 1.4@.2/.02 5 1.5 NPN TO-39 2N1480 * 55 1.5 20/60@.2/4 1.4@.2/.02 5 1.5 NPN TO-39 2N1481 *

Contextual Info: MJW3281A NPN MJW1302A (PNP) Preferred Devices Complementary NPN−PNP Silicon Power Bipolar Transistors The MJW3281A and MJW1302A are PowerBase t power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency

Contextual Info: MJW3281A NPN MJW1302A (PNP) Complementary NPN-PNP Silicon Power Bipolar Transistors The MJW3281A and MJW1302A are PowerBase t power transistors for high power audio, disk head positioners and other linear applications. Features • Designed for 100 W Audio Frequency

MJW1302A

Abstract: MJW3281A NPN 200 VOLTS 20 Amps POWER TRANSISTOR
Contextual Info: MJW3281A NPN MJW1302A (PNP) Preferred Devices Complementary NPN-PNP Silicon Power Bipolar Transistors The MJW3281A and MJW1302A are PowerBase t power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency

MJW21196

Abstract: MJW21195 npn 10000 JAPAN transistor
Contextual Info: MJW21195 PNP MJW21196 (NPN) Preferred Devices Silicon Power Transistors The MJW21195 and MJW21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http://onsemi.com

MJW1302A

Abstract: MJW1302AG MJW3281A MJW3281AG complementary npn-pnp power transistors TO-247
Contextual Info: MJW3281A NPN MJW1302A (PNP) Preferred Devices Complementary NPN−PNP Silicon Power Bipolar Transistors The MJW3281A and MJW1302A are PowerBase t power transistors for high power audio, disk head positioners and other linear applications. Features • Designed for 100 W Audio Frequency

complementary npn-pnp power transistors

Abstract: MJW1302A MJW1302AG MJW3281A MJW3281AG
Contextual Info: MJW3281A NPN MJW1302A (PNP) Complementary NPN-PNP Silicon Power Bipolar Transistors The MJW3281A and MJW1302A are PowerBase t power transistors for high power audio, disk head positioners and other linear applications. Features • Designed for 100 W Audio Frequency

2N3773 NPN Audio Power AMP Transistor

Abstract: 2N5192 BD441 mje15034 mj150* darlington transistor MJ15025 transistor Mj21194 TIP2955 application note MJ31193 mjl4281 MJE18006
Contextual Info: BIPOLAR POWER TRANSISTORS SELECTOR GUIDE SELECTION BY PACKAGE IC Range Amps VCE Range (Volts) PD (Watts) SO−8 3.0 30 2.0 (Note 2) SOT−223 0.5−3.0 30 2.0 (Note 1) DPAK 0.5-10 40-450 12.5-25 D2PAK 5.0−15 80−450 50−75 DPAK 0.5-10 40-450 12.5-25

MJW21194

Abstract: MJW21193
Contextual Info: MJW21193 PNP MJW21194 (NPN) Preferred Devices Silicon Power Transistors The MJW21193 and MJW21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http://onsemi.com

GT30F124

Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

Contextual Info: MJL3281A NPN MJL1302A (PNP) Preferred Devices Complementary NPN−PNP Silicon Power Bipolar Transistors The MJL3281A and MJL1302A are PowerBaset power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency

NPN 200 VOLTS 20 Amps POWER TRANSISTOR

Contextual Info: ON Semiconductort PNP MJ21195 * NPN MJ21196 * Silicon Power Transistors The MJ21195 and MJ21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. *ON Semiconductor Preferred Device