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    PNP 100V 2A Search Results

    PNP 100V 2A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    UHD532/883 Rochester Electronics LLC UHD532 - POWER DRIVER, NOR, QUAD 2-INPUT, 100V - Dual marked (5962-8960403CA) Visit Rochester Electronics LLC Buy
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    ISL73128RHX/SAMPLE Renesas Electronics Corporation Radiation Hardened Ultra High Frequency PNP Transistor Array Visit Renesas Electronics Corporation
    ISL73096RHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation

    PNP 100V 2A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Zetex ZXTP19100CZ

    Abstract: TS16949 ZXTN19100CZ ZXTP19100CZ ZXTP19100CZTA
    Text: ZXTP19100CZ 100V PNP medium power transistor in SOT89 Summary BVCEO > -100V BVECO > -7V IC cont = 2A VCE(sat) < -130mV @ -1A RCE(sat) = 100m⍀ PD = 2.4W Complementary part number ZXTN19100CZ Description C Packaged in the SOT89 outline this new low saturation 100V PNP


    Original     		PDF ZXTP19100CZ -100V -130mV ZXTN19100CZ ZXTP19100CZTA D-81541 Zetex ZXTP19100CZ TS16949 ZXTN19100CZ ZXTP19100CZ ZXTP19100CZTA

    ZXTN19100CFF

    Abstract: TS16949 ZXTP19100CFF ZXTP19100CFFTA
    Text: ZXTP19100CFF 100V, SOT23F, PNP medium power transistor Summary BVCEO > -100V BVECO > -7V IC cont = -2A VCE(sat) < 120mV @ 1A RCE(sat) = 95m⍀ PD = 1.5W Complementary part number: ZXTN19100CFF Description C Packaged in the SOT23 outline this new low saturation 100V PNP


    Original     		PDF ZXTP19100CFF OT23F, -100V 120mV ZXTN19100CFF D-81541 ZXTN19100CFF TS16949 ZXTP19100CFF ZXTP19100CFFTA

    Untitled

    Abstract: No abstract text available
    Text: ZXTP19100CFF 100V, SOT23F, PNP medium power transistor Summary BVCEO > -100V BVECO > -7V IC cont = -2A VCE(sat) < 120mV @ 1A RCE(sat) = 95m⍀ PD = 1.5W Complementary part number: ZXTN19100CFF Description C Packaged in the SOT23 outline this new low saturation 100V PNP


    Original     		PDF ZXTP19100CFF OT23F, -100V 120mV ZXTN19100CFF D-81541

    Untitled

    Abstract: No abstract text available
    Text: ZXTP19100CZ 100V PNP medium power transistor in SOT89 Summary BVCEO > -100V BVECO > -7V IC cont = 2A VCE(sat) < -130mV @ -1A RCE(sat) = 100m⍀ PD = 2.4W Complementary part number ZXTN19100CZ Description C Packaged in the SOT89 outline this new low saturation 100V PNP


    Original     		PDF ZXTP19100CZ -100V -130mV ZXTN19100CZ ZXTP19100CZTA D-81541

    Bv 42 transistor

    Abstract: zxtP sot223 device Marking ZXTP2013G ZXTP2013GTA ZXTP2013GTC
    Text: ZXTP2013G 100V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -100V : RSAT = 60m ; IC = -5A DESCRIPTION Packaged in the SOT223 outline this new low saturation 100V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		PDF ZXTP2013G OT223 -100V OT223 ZXTP2013GTA ZXTP2013GTC DEV26100 Bv 42 transistor zxtP sot223 device Marking ZXTP2013G ZXTP2013GTA ZXTP2013GTC

    SOT89 transistor marking 4A high frequency

    Abstract: ZX5T953ZTA ZX5T953Z
    Text: ZX5T953Z 100V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -100V : RSAT = 57m ; IC = -3.5A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 100V PNP transistor offers low on state losses making it ideal for use in DC-DC


    Original     		PDF ZX5T953Z -100V ZX5T953ZTA SOT89 transistor marking 4A high frequency ZX5T953ZTA ZX5T953Z

    ZXTP2013Z

    Abstract: ZXTP2013ZTA
    Text: ZXTP2013Z 100V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -100V : RSAT = 57m ; IC = -3.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 100V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line


    Original     		PDF ZXTP2013Z -100V ZXTP2013ZTA ZXTP2013Z ZXTP2013ZTA

    ZXT953K

    Abstract: ZXT953KTC of ZXT953KTC
    Text: ZXT953K 100V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN D-PAK SUMMARY BVCEO = -100V : RSAT = 67m ; IC = -5A DESCRIPTION Packaged in the D-Pak outline this high current high performance 100V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits


    Original     		PDF ZXT953K -100V ZXT953KTC ZXT953K ZXT953KTC of ZXT953KTC

    ZX5T953GTA

    Abstract: ZX5T953G ZX5T953GTC x5t953
    Text: ZX5T953G 100V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -100V : RSAT = 60m ; IC = -5A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 100V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC


    Original     		PDF ZX5T953G OT223 -100V OT223 ZX5T953GTA ZX5T953GTC ZX5T953GTA ZX5T953G ZX5T953GTC x5t953

    ZXTP19100CG

    Abstract: ZXTP19100C TS16949 ZXTN19100CG ZXTP19100CGTA 30W dc motor current driver
    Text: ZXTP19100CG 100V PNP medium transistor in SOT223 Summary BVCEO > -100V BVECO > -7V IC cont = 2A VCE(sat) < -130mV @ -1A RCE(sat) = 100m⍀ PD = 3.0W Complementary part number ZXTN19100CG Description C Packaged in the SOT223 outline this new low saturation PNP transistor


    Original     		PDF ZXTP19100CG OT223 -100V -130mV ZXTN19100CG OT223 ZXTP19100CGTA D-81541 ZXTP19100CG ZXTP19100C TS16949 ZXTN19100CG ZXTP19100CGTA 30W dc motor current driver

    Untitled

    Abstract: No abstract text available
    Text: ZXTP2013Z 100V PNP LOW SATURATION M EDIUM POWER TRANSISTOR IN SOT89 SUM M ARY BV CEO = -100V : RSAT = 57m ; IC = -3.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 100V PNP transistor offers low on state losses m aking it ideal for use in DC-DC circuits, line


    Original     		PDF ZXTP2013Z -100V TP2013ZTA

    Untitled

    Abstract: No abstract text available
    Text: ZXTP2013G 100V PNP M EDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUM M ARY BV CEO = -100V : RSAT = 60m ; IC = -5A DESCRIPTION Packaged in the SOT223 outline this new low saturation 100V PNP transistor offers extrem ely low on state losses m aking it ideal for use in DC-DC circuits


    Original     		PDF ZXTP2013G OT223 -100V OT223 TP2013GTA TP2013GTC un250

    Untitled

    Abstract: No abstract text available
    Text: ZXT953K 100V PNP LOW SATURATION M EDIUM POWER TRANSISTOR IN D-PAK SUM M ARY BV CEO = -100V : RSAT = 67m ; IC = -5A DESCRIPTION Packaged in the D-Pak outline this high current high perform ance 100V PNP transistor offers low on state losses m aking it ideal for use in DC-DC circuits


    Original     		PDF ZXT953K -100V T953KTC

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FCX593 100V PNP MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > -100V • • IC = -1A high Continuous Collector Current • • ICM = -2A Peak Collector Current • Low saturation voltage VCE sat < -200mV @ -250mA


    Original     		PDF FCX593 -100V -200mV -250mA FCX493 AEC-Q101 J-STD-020 DS33063

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FMMT593 100V PNP HIGH VOLTAGE TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • • • BVCEO > -100V IC = -1A high Continuous Collector Current ICM = -2A Peak Pulse Current


    Original     		PDF FMMT593 -100V FMMT493 AEC-Q101 J-STD-020 MIL-STD-202s, DS33106

    X5T953

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated Green ZX5T953G 100V PNP MEDIUM POWER TRANSISTOR IN SOT223 Features and Benefits Mechanical Data • • • • • • • • • • BVCEO > -100V IC = -5A Continuous Collector Current Low Saturation Voltage -90mV max @-1A


    Original     		PDF ZX5T953G OT223 -100V -90mV AEC-Q101 OT223 J-STD-020 DS33425 X5T953

    marking 056

    Abstract: ZXTP25100BFH ZETEX marking 056 SOT23 ZXTN25100BFH ZXTP25100BFHTA ZXTN
    Text: ZXTP25100BFH 100V, SOT23, PNP medium power transistor Summary BV BR CEX > -140V, BV(BR)CEO > -100V BV(BR)ECX > -7V ; IC(cont) = -2A VCE(sat) < -130mV @ -1A RCE(sat) = 108m⍀ typical PD = 1.25W Complementary part number ZXTN25100BFH Description C Advanced process capability and package design have been used to


    Original     		PDF ZXTP25100BFH -140V, -100V -130mV ZXTN25100BFH marking 056 ZXTP25100BFH ZETEX marking 056 SOT23 ZXTN25100BFH ZXTP25100BFHTA ZXTN

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated Green ZX5T953G 100V PNP MEDIUM POWER TRANSISTOR IN SOT223 Features and Benefits Mechanical Data • • • • • • • • • • BVCEO > -100V IC = -5A Continuous Collector Current Low Saturation Voltage -90mV max @-1A


    Original     		PDF ZX5T953G OT223 -100V -90mV AEC-Q101 J-STD-020 DS33425

    marking P53 transistor

    Abstract: ZX5T753F
    Text: ZX5T753F ADVANCED ISSUE SOT23 PNP SILICON 100V GENERATION 5 LOW SATURATION MEDIUM POWER TRANSISTOR SUMMARY V(BR)CE V / S / R > -120V V(BR)CEO > -100V Ic(cont) = -3A Rce(sat) = 77 m typical Vce(sat) < -110 mV @ -1A SOT23 DESCRIPTION FEATURES • • • •


    Original     		PDF ZX5T753F -120V -100V marking P53 transistor ZX5T753F

    2N5675

    Abstract: No abstract text available
    Text: 2N5675 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 100V 0.41 (0.016)


    Original     		PDF 2N5675 O205AD) 1-Aug-02 2N5675

    MM5007

    Abstract: No abstract text available
    Text: MM5007 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 100V 0.41 (0.016)


    Original     		PDF MM5007 O205AD) 1-Aug-02 MM5007

    Untitled

    Abstract: No abstract text available
    Text: MM5007 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 100V 0.41 (0.016)


    Original     		PDF MM5007 O205AD) 19-Jun-02

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated Green ZX5T953G 100V PNP MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • • • BVCEO > -100V IC = -5A high Continuous Collector Current ICM = -10A Peak Pulse Current


    Original     		PDF ZX5T953G OT223 -100V -90mV AEC-Q101 OT223 J-STD-020 DS33425

    FZT953TA

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FZT953 Green 100V PNP MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • • • • BVCEO > -100V IC = -5A high Continuous Collector Current ICM = -10A Peak Pulse Current


    Original     		PDF FZT953 OT223 -100V -115mV FZT853 AEC-Q101 OT223 J-STD-020 FZT953 DS35942 FZT953TA