PNP 9014 Search Results

transistor 9015 c

Abstract: 9015 PNP
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 9015 PNP EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE „ FEATURES * High total power dissipation. 450mW * Excellent hFE linearity. * Complementary to UTC 9014 „ ORDERING INFORMATION Ordering Number Package

transistor 9015 c

Abstract: pnp transistor 9015 9015 TO-92 transistor c 9015 v 9015 transistor C 9015 transistor transistor 9015 Free 9014 9015* Transistor
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 9015 Preliminary PNP EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE „ FEATURES * High total power dissipation. 450mW * Excellent hFE linearity. * Complementary to UTC 9014 „ ORDERING INFORMATION Ordering Number

UTC9014

Abstract: utc 9014 9015 TO-92 transistor 9014 c
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 9015 Preliminary PNP EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE „ FEATURES * High total power dissipation. 450mW * Excellent hFE linearity. * Complementary to UTC 9014 „ ORDERING INFORMATION Ordering Number

9015B

Abstract: 9014b C 9015b a3101 C 9014B
Contextual Info: 9015B 9015B Silicon PNP Epitaxial Transistor Description :The 9015B is designed for use in pre-amplifier of low level and low noise Features: ●Excellent hFE Linearity ●Complementary to 9014B Chip Appearance Chip Size 350umx350um Chip Thickness 210±20um

transistor 9015 c

Abstract: 9015 PNP transistor c 9015 C 9015 transistor 9015 transistor pnp transistor 9015 UTC 9015 transistor 9015 9015 transistor specification sheet utc 9014
Contextual Info: UTC 9015 PNP EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES *High total power dissipation. 450mW *Excellent hFE linearity. *Complementary to UTC 9014 1 TO-92 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )

Contextual Info: UTC 9015 PNP EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES *High total power dissipation. 450mW *Excellent hFE linearity. *Complementary to UTC 9014 1 TO-92 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )

transistor 9015 c

Abstract: transistor c 9015 C 9015 transistor pnp transistor 9015 9015 transistor 9015 V. 9015 c af 9015 transistor 9015 LM 9015
Contextual Info: HN 9015 PNP Silicon Expitaxial Planar Transistor for switching and AF am plifier applications. The transistor is subdivided into four groups, A, B, C, and D, according to its DC current gain. As com plem entary type the NPN transistor HN 9014 is recommended.

transistor 9014 C npn

Abstract: V. 9014 c C 9014 transistor TRANSISTOR c 9014 9014 C transistor 9014 NPN transistor 9014 c 9014 Transistor S 9014 npn V 9014 c
Contextual Info: HN 9014 NPN Silicon Expitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C, and D, acco rd in g to its DC current gain. As com plem entary type the PNP transistor HN 9015 is recommended.

BR 9014

Abstract: BR 9015 BR 9014 C transistor 9015 c 9015 transistor data sheet transistor 9014 transistor 9015 9015 pnp pnp transistor 9015 9015 TO-92
Contextual Info: ST 9015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the NPN transistor ST 9014 is recommended. 1. Emitter 2. Base 3. Collector

Contextual Info: UNISONICTECHNOLOGIESCO., LTD 9015 Preliminary PNP EPITAXIAL SILICON TRANSISTOR PRE-AM PLI FI ER, LOW LEV EL & LOW N OI SE ̈ FEAT U RES * High total power dissipation. 450mW * Excellent hFE linearity. * Complementary to UTC 9014 ̈ ORDERI N G I N FORM AT I ON

transistor c 9015

Abstract: BR 9014 BR 9015 BR 9014 transistor transistor 9015 c 9015 PNP pnp transistor 9015 BR 9014 C TRANSISTOR transistors BR 9015 9015 TO-92
Contextual Info: ST 9015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the NPN transistor ST 9014 is recommended. On special request, these transistors can be

BR 9014 transistor

Abstract: BR 9014 TRANSISTOR 9014 C 9014 transistor ST 9014 C BR 9014 C 9014 TRANSISTOR c 9014 st 9014 NPN 9014
Contextual Info: ST 9014 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the PNP transistor ST 9015 is recommended. On special request, these transistors can be

br 9015

Abstract: pnp transistor 9015 transistor 9015 c 9015 pnp BR 9014 transistor c 9015 9015 transistor C 9015 transistor transistor 9015 BR 9015 C
Contextual Info: ST 9015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the NPN transistor ST 9014 is recommended. On special request, these transistors can be

BR 9015

Abstract: transistor 9015 c transistor c 9015 BR 9015 C pnp transistor 9015 transistors BR 9015 9015 pnp transistor 9015 9015* Transistor C 9015 transistor
Contextual Info: ST 9015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the NPN transistor ST 9014 is recommended. On special request, these transistors can be

BR 9014

Abstract: BR 9014 transistor BR 9015 BR 9014 c transistors BR 9015 transistor 9014 NPN 9015 PNP transistor 9015 c transistor c 9015 TS 9015
Contextual Info: ST 9015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the NPN transistor ST 9014 is recommended. On special request, these transistors can be

BR 9014

Abstract: BR 9014 transistor 9014 C 9014 transistor transistor 9014 npn TRANSISTOR c 9014 ST 9014 C BR 9014 c V. 9014 c transistor 9014 C npn
Contextual Info: ST 9014 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the PNP transistor ST 9015 is recommended. On special request, these transistors can be

BR 9014

Abstract: BR 9014 transistor BR 9014 C ST 9014 C C 9014 transistor st 9014 TRANSISTOR c 9014 TRANSISTOR 9014 V. 9014 c 9014
Contextual Info: ST 9014 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the PNP transistor ST 9015 is recommended. On special request, these transistors can be

LM 9014 c

Abstract: lm 9014 ST 9014 C a/LM 9014 c
Contextual Info: S EM IC O N D U C T O R KTC9015 TECHNI CAL DATA EPITA X IA L PL A N A R PNP T R A N SIST O R G E N E R A L PUR PO SE A PPLICATION. SW ITC H IN G APPLICATIO N. FEA T U RE S • Excellent h FE Linearity : hFE Ic=-0. lm A /hFE(Ic=-2mA)=0.95(Typ.). • Low Noise :N F=ldB(Typ.) at f=lkHz.

9014A

Contextual Info: S EM IC O N D U C T O R KTC9015A TECHNI CAL DATA EPITA X IA L PL A N A R PNP T R A N SIST O R G E N E R A L PUR PO SE A PPLICATION. SW ITC H IN G APPLICATIO N. FEA T U RE S • Excellent h FE Linearity : hFE Ic=-0. lm A /hFE(Ic=-2mA)=0.95(Typ.). y • Low Noise :N F=ldB(Typ.) at f=lkHz.

transistor c 9018

Abstract: Transistor CL 100 9011 9012 9013 9014 9018 transistor 9014 NPN transistor 9013 NPN audio output V. 9014 c 9016 transistor audio output TRANSISTOR NPN 9013 9011 NPN transistor npn 9016 transistor
Contextual Info: SELECTION GUIDE FOR AM / FM RADIO TRANSISTOR KIT Output AM R E C E IV E R r- IF 2 IF1 Conv. 901Ì 901 9012 A F Amp. 9011 SP. 9014 or :9015 7 <1 9013 Output FM R E C E IV E R F M RF 90! 6 rF M Conv. F M IF A M Conv. 9011/8 9016/8 A M / F M IF AF A m o A M / F M IF

9011 9012 9013 9014 9018

Abstract: 9011 NPN transistor transistor c 9018 npn 9016 transistor F 9016 transistor transistor 9014 C npn C 9014 transistor 9018 transistor 9016 transistor pnp transistor 9015
Contextual Info: 'ty i / >; •i CL9000 i ÎÏ t it -V, 1'* r-t, *i *Vj 1t E i SERIES AM FM RADIO TRANSISTOR KIT G U ID E SELECTION FOR AM / FM RADIO TRANSISTOR KIT Output AM R EC EIV ER? Y _ son IF2 IF1 Conv. H 90 H 9012 AF Amp. 9014 M 90U SP. or <1 :9015 9013 Output FM R EC EIV ER

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

c546b

Abstract: c557b of bc 237 b C547B c558b BC 9014 ba W61C c 557b 082BC w61b
Contextual Info: NPN General Purpose Amplifiers & Switches Device No. [Mark] B C W65C [ED ] Case Style TO-236 49 V CEO (V) Min 32 B C X 58 TO-92 (97) 32 BSR14 [U8] TO-236 (49) 40 V CBO VCES* (V) Min 60 75 V EBO (V) Min 5 I CBO ICES* (nA) Max 20* @ VCB (V) 32 TO-236 (49)

diac D30

Abstract: db3 diac bc 9013 marking 4d NPN ZN 5551 diode DIAC DB3 EQUIVALENT BZXS4C24V 8Z-2 9014 sot-23 ZT 5551
Contextual Info: Continental Device India Limited An IS/ISO 9002 & IECQ. certified manufacturer of quality discrete semiconductor components Surface Mount SOT-23 Semiconductors , , Transistors Z ener Diodes Switching and Schottky Diodes Quick Reference Data CONTINENTAL DEVICE INDIA LIMITED