PNP EPITAXIAL SILICON TRANSISTOR 5A Search Results

PNP EPITAXIAL SILICON TRANSISTOR 5A Result Highlights (5)

Part	Manufacturer	Description
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
2SA1213	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini
TTA2070	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-1 A / hFE=200~500 / VCE(sat)=-0.20V / tf=90 ns / PW-Mini
TTA013	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-120 V / IC=-2.5 A / hFE=120~240 / VCE(sat)=-0.32 V / tf=65 ns / PW-Mini
TPCP8606	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PS-8

PNP EPITAXIAL SILICON TRANSISTOR 5A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
TIP127 Application Note Abstract: tip127 TIP127L TIP127G UTC SILICON PNP 3A TRANSISTORS PNP POWER TRANSISTOR TO220 Contextual Info: UNISONIC TECHNOLOGIES CO., LTD TIP127 PNP SILICON TRANSISTOR PNP EPITAXIAL TRANSISTOR DESCRIPTION The UTC TIP127 is a PNP epitaxial transistor, designed for use in general purpose amplifier low-speed switching applications. Lead-free: TIP127L Halogen-free: TIP127G	Original	TIP127 TIP127 TIP127L TIP127G TIP127-TA3-T TIP127-T60-K TIP127L-TA3-T TIP127L-T60-K TIP127G-TA3-T TIP127G-T60-K TIP127 Application Note TIP127L TIP127G UTC SILICON PNP 3A TRANSISTORS PNP POWER TRANSISTOR TO220	PDF
TIP127G Contextual Info: UNISONIC TECHNOLOGIES CO., LTD TIP127 PNP SILICON TRANSISTOR PNP EPITAXIAL TRANSISTOR DESCRIPTION The UTC TIP127 is a PNP epitaxial transistor, designed for use in general purpose amplifier low-speed switching applications. Lead-free: TIP127L Halogen-free: TIP127G	Original	TIP127 TIP127 TIP127L TIP127G TIP127-TA3-T TIP127-T60-K TIP127L-TA3-T TIP127L-T60-K TIP127G-TA3-T TIP127G-T60-K TIP127G	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD TIP127 PNP SILICON TRANSISTOR PNP EPITAXIAL TRANSISTOR  DESCRIPTION The UTC TIP127 is a PNP epitaxial transistor, designed for use in general purpose amplifier low-speed switching applications.  EQUIVALENT TEST R1 ≈8kΩ, R2 ≈0.12kΩ	Original	TIP127 TIP127 TIP127L-T60-K TIP127G-T60-K TIP127L-TA3-T TIP127G-TA3-T TIP127L-TF3-T TIP127G-TF3-T O-126 O-220	PDF
tip127 Contextual Info: UNISONIC TECHNOLOGIES CO., LTD TIP127 PNP SILICON TRANSISTOR PNP EPITAXIAL TRANSISTOR DESCRIPTION The UTC TIP127 is a PNP epitaxial transistor, designed for use in general purpose amplifier low-speed switching applications. EQUIVALENT TEST R1 ≈8kΩ, R2 ≈0.12kΩ	Original	TIP127 TIP127 TIP127L-T60-K TIP127G-T60-K TIP127L-TA3-T TIP127G-TA3-T O-126 O-220 QW-R203-005	PDF
TIP127 Abstract: TIP127 Application Note TIP127 equivalent tip127 TRANSISTOR equivalent TRANSISTOR 077 Contextual Info: UNISONIC TECHNOLOGIES CO., LTD TIP127 PNP SILICON TRANSISTOR PNP EPITAXIAL TRANSISTOR DESCRIPTION The UTC TIP127 is a PNP epitaxial transistor, designed for use in general purpose amplifier low-speed switching applications. EQUIVALENT TEST R1 ≈8kΩ, R2 ≈0.12kΩ	Original	TIP127 TIP127 TIP127L-T60-K TIP127G-T60-K TIP127L-TA3-T TIP127G-TA3-T O-126 O-220 QW-R203-005 TIP127 Application Note TIP127 equivalent tip127 TRANSISTOR equivalent TRANSISTOR 077	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD TIP127 PNP SILICON TRANSISTOR PNP EPITAXIAL TRANSISTOR DESCRIPTION The UTC TIP127 is a PNP epitaxial transistor, designed for use in general purpose amplifier low-speed switching applications. EQUIVALENT TEST R1 ≈8kΩ, R2 ≈0.12kΩ	Original	TIP127 TIP127 TIP127L-T60-K TIP127G-T60-K TIP127L-TA3-T TIP127G-TA3-T TIP127L-TF3-T TIP127G-TF3-T O-126 O-220	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD TIP127 PNP SILICON TRANSISTOR PNP EPITAXIAL TRANSISTOR  DESCRIPTION The UTC TIP127 is a PNP epitaxial transistor, designed for use in general purpose amplifier low-speed switching applications.  EQUIVALENT TEST R1 ≈8kΩ, R2 ≈0.12kΩ	Original	TIP127 TIP127 TIP127L-TA3-T TIP127G-TA3-T O-220 TIP127L-TF3-T TIP127G-TF3-T O-220F TIP127L-T60-K TIP127G-T60-K	PDF
Contextual Info: BDW94/C PNP Epitaxial Silicon Transistor BDW94/C PNP Epitaxial Silicon Transistor Power Linear and Switching Application • Power Darlington TR • Complement to BDW93 and BDW93C Respectively 1 1.Base Absolute Maximum Ratings Symbol VCBO VCEO TO-220 2.Collector	Original	BDW94/C BDW94/C BDW93 BDW93C O-220 BDW94 BDW94C	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD STD888 Preliminary PNP EPITAXIAL SILICON TRANSISTOR HIGH CURRENT, HIGH PERFORMANCE, LOW VOLTAGE PNP TRANSISTOR  DESCRIPTION The UTC STD888 is a high current, high performance, low voltage PNP transistor; it uses UTC’s advanced technology to provide	Original	STD888 STD888 STD888L-at QW-R209-028	PDF
sop8901 Contextual Info: SOP8901 Ordering number : ENN8199 SOP8901 PNP Epitaxial Planar Silicon Transistor N-Channel Silicon MOSFET Motor Bridge Circuit Applications Features • Composite type with a PNP transistor and an N-ch Sillicon MOSFET contained in one package facilitating highdensity mounting.	Original	OP8901 ENN8199 sop8901	PDF
Contextual Info: Ordering number:EN6007 PNP Silicon Epitaxial Planar Transistor Schottky Barrier Diode CPH6701 DC/DC Converter Applications Features Package Dimensions • Composite type with a PNP transistor and a Schottky barrier diode contained in one package facilitating	OCR Scan	EN6007 CPH6701 CPH670I CPH3106 CPH6701]	PDF
2SB817P Abstract: 2SD1047P Contextual Info: Ordering number : ENN6572 2SB817P / 2SD1047P 2SB817P : PNP Epitaxial Planar Silicon Transistor 2SD1047P : NPN Triple Diffused Planar Silicon Transistor 2SB817P / 2SD1047P 140V / 12A, AF80W Output Applications Features unit : mm 2022A [2SB817P / 2SD1047P] 15.6	Original	ENN6572 2SB817P 2SD1047P: 2SB817P 2SD1047P AF80W 2SD1047P] 2SD1047P	PDF
2SD1842 Abstract: 2SB1232 ITR09408 ITR09409 ITR09410 Contextual Info: Ordering number:ENN3261A 2SB1232 : PNP Epitaxial Planar Silicon Transistor 2SD1842 : NPN Triple Diffused Planar Silicon Transistor 2SB1232/2SD1842 100V/40A Switching Applications Applications Package Dimensions • Motor drivers, relay drivers, converters, and other	Original	ENN3261A 2SB1232 2SD1842 2SB1232/2SD1842 00V/40A 2SB1232/2SD1842] 2SD1842 2SB1232 ITR09408 ITR09409 ITR09410	PDF
marking PA Abstract: CPH3106 CPH6701 "marking PA" Contextual Info: Ordering number:ENN6007A PNP Epitaxial Planar Silicon Transistor Schottky Barrier Diode CPH6701 DC/DC Converter Applications Features • Composite type with a PNP transistor and a Schottky barrier diode contained in one package facilitating high-density mounting.	OCR Scan	ENN6007A CPH6701 CPH6701 CPH3106 SBS001, CPH6701] marking PA "marking PA"	PDF

Contextual Info: Ordering number: EN3 7 2 0 2SB1388/2SD2093 2SB1388 : PNP Epitaxial Planar Silicon Transistor 2SD2093 : NPN Triple Diffused Planar Silicon Transistor 100V/10A Driver Applications Applications • Motor drivers, printer hammer drivers, relay drivers, voltage regulator control.	OCR Scan	2SB1388/2SD2093 2SB1388 2SD2093 00V/10A T03PML c17D7b 3720-l/4	PDF
TA-3317 Abstract: 2SA2062 2SC5774 D1503 2SA20 Contextual Info: 2SA2062 / 2SC5774 Ordering number : ENN6987A 2SA2062 / 2SC5774 Features • • • PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 140V / 10A, AF70W Output Applications Large current capacitance. Wide ASO and high durability against breakdown.	Original	2SA2062 2SC5774 ENN6987A AF70W 2SA2062 TA-3317 2SC5774 D1503 2SA20	PDF
Contextual Info: UTC MJD210 PNP EPITAXIAL PLANAR SILICON TRANSISTOR PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS DESCRIPTION The UTC MJD210 is designed for low voltage, low-power, high-gain audio amplifier applications. FEATURE *Collector-Emitter Sustaining Voltage VCEO sus =25V (Min) @ IC =10mA	Original	MJD210 500mA QW-R213-001	PDF
Contextual Info: 2N6190 MECHANICAL DATA Dimensions in mm Inches PNP SILICON TRANSISTORS 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) FEATURES 6.10 (0.240) 6.60 (0.260) • SILICON PLANAR EPITAXIAL PNP TRANSISTOR 12.70 (0.500) min. 0.89 max. (0.035) • HERMETICALLY SEALED TO-39	Original	2N6190 2N6190 O205AD) 100kHz	PDF
Contextual Info: UTC MJD210 PNP EPITAXIAL PLANAR SILICON TRANSISTOR PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS DESCRIPTION The UTC MJD210 is designed for low voltage, low-power, high-gain audio amplifier applications. FEATURE *Collector-Emitter Sustaining Voltage VCEO sus =25V (Min) @ IC =10mA	Original	MJD210 500mA QW-R213-001	PDF
2N6190 Abstract: TO39 package PNP EPITAXIAL SILICON TRANSISTOR 5A Contextual Info: 2N6190 MECHANICAL DATA Dimensions in mm Inches PNP SILICON TRANSISTORS 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) FEATURES 6.10 (0.240) 6.60 (0.260) • SILICON PLANAR EPITAXIAL PNP TRANSISTOR 12.70 (0.500) min. 0.89 max. (0.035) • HERMETICALLY SEALED TO-39	Original	2N6190 2N6190 O205AD) 100kHz TO39 package PNP EPITAXIAL SILICON TRANSISTOR 5A	PDF
2SD1047C Abstract: 2sb817c 2SB817 Contextual Info: 2SB817C / 2SD1047C Ordering number : ENA0188 2SB817C / 2SD1047C PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 140V / 12A, AF 80W Output Applications Features • • • Large current capacitance. Wide ASO and high durability against breakdown.	Original	ENA0188 2SB817C 2SD1047C 2SB817C A0188-4/4 2SD1047C 2SB817	PDF
2SB887 Abstract: 2SD1197 ITR08623 ITR08624 Contextual Info: 2SB887 / 2SD1197 Ordering number : EN1079B SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Darlington Transistor NPN Triple Diffused Planar Silicon Darlington Transistor 2SB887 / 2SD1197 Driver Applications Applications • Motor drivers, printer hammer drivers, relay drivers, voltage regulator control.	Original	2SB887 2SD1197 EN1079B 2SB887 2SD1197 ITR08623 ITR08624	PDF
ic 2903 data Abstract: ENN6591 CPH3109 CPH5705 SBS004 Contextual Info: Ordering number : ENN6591 CPH5705 TR : PNP Epitaxial Planar Silicon Transistor SBD : Sohottky Barrier Diode CPH5705 DC / DC Converter Applications Features unit : mm 2156 4 0.15 3 0.6 5 0.2 [CPH5705] 2.9 0.05 0.6 • Composite type with a PNP transistor and a Schottky	Original	ENN6591 CPH5705 CPH5705] CPH5705 CPH3109 SBS004, ic 2903 data ENN6591 SBS004	PDF
CPH3106 Abstract: CPH5701 SBS004 Contextual Info: Ordering number:ENN6319 TR : PNP Epitaxial Planar Silicon Transistor SBD : Schottky Barrier Diode CPH5701 DC/DC Converter Applications Package Dimensions unit:mm 2156 [CPH5701] 2.9 0.15 0.2 4 3 0.6 5 2.8 0.05 0.6 • Composite type with a PNP transistor and a Schottky	Original	ENN6319 CPH5701 CPH5701] CPH5701 CPH3106 SBS004, SBS004	PDF

PNP EPITAXIAL SILICON TRANSISTOR 5A Search Results

PNP EPITAXIAL SILICON TRANSISTOR 5A Result Highlights (5)

PNP EPITAXIAL SILICON TRANSISTOR 5A Datasheets Context Search

TIP127 Application Note

TIP127G

tip127

TIP127

sop8901

2SB817P

2SD1842

marking PA

TA-3317

2N6190

2SD1047C

2SB887

ic 2903 data

CPH3106