PNP EPITAXIAL SILICON TRANSISTOR 60V Search Results

Contextual Info: UNISONIC TECHNOLOGIES CO., 2SB1260 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. 1 FEATURES *High breakdown voltage and high current. BVCEO= -80V, Ic = -1A *Good hFE linearity.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB1260 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR 1 DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. SOT-89 FEATURES *High breakdown voltage and high current. BVCEO= -80V, IC= -1A *Good hFE linearity.

Contextual Info: UTC 2SB1260 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. 1 FEATURES *High breakdown voltage and high current. BVCEO= -80V,Ic = -1A *Good hFE linearity. *Low VCE sat SOT-89

Contextual Info: UTC 2SB1260 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. 1 FEATURES *High breakdown voltage and high current. BVCEO= -80V,Ic = -1A *Good hFE linearity. *Low VCE sat SOT-89

2SA1235A

Abstract: 100HZ 0-16mA
Contextual Info: PRELIMINARY RT3AMMM Composite Transistor For Low Frequency Amplify Application Silicon Pnp Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit：mm RT3AMMM is compound transistor built with two 2SA1235A chips in SC-88 package. FEATURE Silicon pnp epitaxial type

ISA1235

Abstract: RT3AMMAM1 100HZ ISA1235A
Contextual Info: PRELIMINARY RT3AMMAM1 Composite Transistor For Low Frequency Amplify Application Silicon Pnp Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit：mm RT3AMMAM1 is compound transistor built with two ISA1235A chips in SC-88 package. FEATURE Silicon PNP epitaxial type

2SB1116

Abstract: 2SB1116A
Contextual Info: UTC 2SB1116/A PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION * Complement to 2SD1616/A APPLICATIONS * Audio Frequency Power Amplifier * Medium Speed Switching 1 TO-92 1: Emitter 2: Collector 3: Base ABSOLUTE MAXIMUM RATINGS Ta=25°C

Contextual Info: UTC 2SB1116/A PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION * Complement to 2SD1616/A APPLICATIONS * Audio Frequency Power Amplifier * Medium Speed Switching 1 TO-92 1: Emitter 2: Collector 3: Base ABSOLUTE MAXIMUM RATINGS Ta=25°C

2SA1283

Abstract: 2SA1283 transistor Silicon PNP epitaxial
Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1283 FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA1283 is a silicon PNP epitaxial type transistor designed tor relay OUTLINE DRAWING Uni' f 5.1 MAX drive or power supply application.

Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1364 FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA1364 is a silicon PNP epitaxial type transistor. It designed with OUTLINE DRAWING high voltage, high collector current and high collector dissipation.

2SA1602A

Abstract: RT2A00M
Contextual Info: RT2A00M COMPOSITE TRANSISTOR FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm RT2A00M is a composite transistor built with two 2SA1602A chips in SC-88 package. FEATURE ●Silicon pnp epitaxial type Each transistor elements are independent.

Contextual Info: STC2907A PNP Silicon Transistor General Purpose Transistor • Collector-Emitter Voltage: VCEO= 60V • Collector Power Dissipation: PC max =625mW TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

TIP32CL-TN3-R

Abstract: TIP32C-TN3-R TIP32C-TN3-T TIP31C TIP32C TIP32CL
Contextual Info: UNISONIC TECHNOLOGIES CO.,LTD TIP32C PNP EPITAXIAL SILICON TRANSISTOR PNP EXPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC TIP32C is a PNP expitaxial planar transistor, designed for using in general purpose amplifier and switching applications. 1 FEATURES

isahaya

Abstract: 2SA1603A
Contextual Info: 〈SMALL-SIGNAL TRANSISTOR〉 2SA1603A FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE Super mini type DESCRIPTION OUTLINE DRAWING Unit：ｍｍ 2SA1603A is a super mini package resin sealed silicon PNP epitaxial transistor, 2.1 It is designed for low frequency voltage application.

2SA1530A

Abstract: 2SA1530
Contextual Info: 〈SMALL-SIGNAL TRANSISTOR〉 2SA1530A FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE Ultra super mini type DESCRIPTION OUTLINE DRAWING Unit：ｍｍ 2SA1530A is a super mini package resin sealed silicon PNP epitaxial transistor, It is designed for low frequency voltage application.

2SA1603A

Contextual Info: 〈SMALL-SIGNAL TRANSISTOR〉 2SA1603A FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE Super mini type DESCRIPTION OUTLINE DRAWING Unit：ｍｍ 2SA1603A is a super mini package resin sealed silicon PNP epitaxial transistor, 2.1 It is designed for low frequency voltage application.

transistor 1012 TO252

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB1260 PNP SILICON TRANSISTOR POWER TRANSISTOR „ DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. „ FEATURES *High breakdown voltage and high current. BVCEO= -80V, IC= -1A *Good hFE linearity.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB1260 PNP SILICON TRANSISTOR POWER TRANSISTOR  DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor.  FEATURES * High breakdown voltage and high current. * BVCEO= -80V, IC= -1A * Good hFE linearity.

smd transistor 2g

Abstract: MARKING 25 SMD PNP TRANSISTOR smd transistor 24 sot23 SMD transistor code 24 transistor SMD 2h TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE 50 TRANSISTOR SMD CODE PACKAGE SOT23 smd transistor marking code 24 SMD TRANSISTOR MARKING DE
Contextual Info: SMD General Purpose Transistor PNP MMBTA55/MMBTA56 SMD General Purpose Transistor (PNP) Features • PNP Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications • RoHS compliance SOT-23 Mechanical Data Case: SOT-23, Plastic Package

2SB1260

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB1260 PNP SILICON TRANSISTOR POWER TRANSISTOR „ DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. „ FEATURES * High breakdown voltage and high current. * BVCEO= -80V, IC= -1A * Good hFE linearity.

2SB1260

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB1260 PNP SILICON TRANSISTOR POWER TRANSISTOR 1 DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. SOT-89 FEATURES *High breakdown voltage and high current. BVCEO= -80V, IC= -1A *Good hFE linearity.

2SA2167

Abstract: 2SA21
Contextual Info: 2SA2167 FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION 2SA2167 is a silicon PNP epitaxial type transistor. It is designed with high voltage, high Collector current, high Collector dissipation. Unit：mm 4.6MAX 0.53

Contextual Info: UNISONIC TECHNOLOGIES CO.,LTD TIP32C PNP SILICON TRANSISTOR PNP EXPITAXIAL PLANAR TRANSISTOR „ DESCRIPTION The UTC TIP32C is a PNP epitaxial planar transistor, designed for using in general purpose amplifier and switching applications. „ FEATURES * Complement to TIP31C

TIP32CG

Abstract: TIP32C Silicon PNP Epitaxial Planar Transistor to220 TIP32CL-TN3-R TIP31C TIP32C-TN3-R TIP31c PNP Transistor TIP32CL UTCTIP32C
Contextual Info: UNISONIC TECHNOLOGIES CO.,LTD TIP32C PNP SILICON TRANSISTOR PNP EXPITAXIAL PLANAR TRANSISTOR „ DESCRIPTION The UTC TIP32C is a PNP epitaxial planar transistor, designed for using in general purpose amplifier and switching applications. „ FEATURES * Complement to TIP31C