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    PNP EPITAXIAL SILICON TRANSISTOR 60V Search Results

    PNP EPITAXIAL SILICON TRANSISTOR 60V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    PNP EPITAXIAL SILICON TRANSISTOR 60V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., 2SB1260 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. 1 FEATURES *High breakdown voltage and high current. BVCEO= -80V, Ic = -1A *Good hFE linearity.


    Original     		PDF 2SB1260 2SB1260 OT-89 2SB1260L 2SB1260-AB3-R 2SB1260L-AB3-R OT-89 QW-R208-017

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1260 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR 1 DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. SOT-89 FEATURES *High breakdown voltage and high current. BVCEO= -80V, IC= -1A *Good hFE linearity.


    Original     		PDF 2SB1260 2SB1260 OT-89 O-252 2SB1260L 2SB1260-x-AB3-F-R 2SB1260L-x-AB3-F-R 2SB1260-x-TN3-F-R 2SB1260L-x-TN3-F-R 2SB1260-x-TN3-F-T

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SB1260 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. 1 FEATURES *High breakdown voltage and high current. BVCEO= -80V,Ic = -1A *Good hFE linearity. *Low VCE sat SOT-89


    Original     		PDF 2SB1260 2SB1260 OT-89 QW-R208-017

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SB1260 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. 1 FEATURES *High breakdown voltage and high current. BVCEO= -80V,Ic = -1A *Good hFE linearity. *Low VCE sat SOT-89


    Original     		PDF 2SB1260 2SB1260 OT-89 100ms QW-R208-017

    2SA1235A

    Abstract: 100HZ 0-16mA
    Text: PRELIMINARY RT3AMMM Composite Transistor For Low Frequency Amplify Application Silicon Pnp Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit：mm RT3AMMM is compound transistor built with two 2SA1235A chips in SC-88 package. FEATURE Silicon pnp epitaxial type


    Original     		PDF 2SA1235A SC-88 JEITASC-88 100HZ 0-16mA

    ISA1235

    Abstract: RT3AMMAM1 100HZ ISA1235A
    Text: PRELIMINARY RT3AMMAM1 Composite Transistor For Low Frequency Amplify Application Silicon Pnp Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit：mm RT3AMMAM1 is compound transistor built with two ISA1235A chips in SC-88 package. FEATURE Silicon PNP epitaxial type


    Original     		PDF ISA1235A SC-88 JEITASC-88 ISA1235 RT3AMMAM1 100HZ

    2SB1116

    Abstract: 2SB1116A
    Text: UTC 2SB1116/A PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION * Complement to 2SD1616/A APPLICATIONS * Audio Frequency Power Amplifier * Medium Speed Switching 1 TO-92 1: Emitter 2: Collector 3: Base ABSOLUTE MAXIMUM RATINGS Ta=25°C


    Original     		PDF 2SB1116/A 2SD1616/A 2SB1116 2SB1116A PW10ms Cycle50% QW-R201-066 2SB1116 2SB1116A

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SB1116/A PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION * Complement to 2SD1616/A APPLICATIONS * Audio Frequency Power Amplifier * Medium Speed Switching 1 TO-92 1: Emitter 2: Collector 3: Base ABSOLUTE MAXIMUM RATINGS Ta=25°C


    Original     		PDF 2SB1116/A 2SD1616/A 2SB1116 2SB1116A 200ms QW-R201-066

    2SA1602A

    Abstract: RT2A00M
    Text: RT2A00M COMPOSITE TRANSISTOR FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm RT2A00M is a composite transistor built with two 2SA1602A chips in SC-88 package. FEATURE ●Silicon pnp epitaxial type Each transistor elements are independent.


    Original     		PDF RT2A00M RT2A00M 2SA1602A SC-88 25Tr1Tr2

    Untitled

    Abstract: No abstract text available
    Text: STC2907A PNP Silicon Transistor General Purpose Transistor • Collector-Emitter Voltage: VCEO= 60V • Collector Power Dissipation: PC max =625mW TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


    Original     		PDF STC2907A 625mW

    TIP32CL-TN3-R

    Abstract: TIP32C-TN3-R TIP32C-TN3-T TIP31C TIP32C TIP32CL
    Text: UNISONIC TECHNOLOGIES CO.,LTD TIP32C PNP EPITAXIAL SILICON TRANSISTOR PNP EXPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC TIP32C is a PNP expitaxial planar transistor, designed for using in general purpose amplifier and switching applications. 1 FEATURES


    Original     		PDF TIP32C TIP32C TIP31C TIP32CL TIP32C-TN3-R TIP32CL-TN3-R TIP32C-TN3-T TIP32CL-TN3-T O-252 TIP32CL-TN3-R TIP32C-TN3-T TIP31C TIP32CL

    isahaya

    Abstract: 2SA1603A
    Text: 〈SMALL-SIGNAL TRANSISTOR〉 2SA1603A FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE Super mini type DESCRIPTION OUTLINE DRAWING Unit：ｍｍ 2SA1603A is a super mini package resin sealed silicon PNP epitaxial transistor, 2.1 It is designed for low frequency voltage application.


    Original     		PDF 2SA1603A 2SA1603A JEITASC-70 isahaya

    ISA1283AS1

    Abstract: 2sc548 2SC5482 011V
    Text: 〈SMALL-SIGNAL TRANSISTOR〉 ISA1283AS1 PRELIMINARY FOR LOW FREQUENCY POWOR AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE Notice: This is not a final specification Some parametric are subject to change. DESCRIPTION OUTLINE DRAWING Unit：ｍｍ ISA1283AS1 is a silicon PNP epitaxial type transistor


    Original     		PDF ISA1283AS1 ISA1283AS1 2SC5482. -500mA, -25mA) 600mW 2sc548 2SC5482 011V

    2SA1530A

    Abstract: 2SA1530
    Text: 〈SMALL-SIGNAL TRANSISTOR〉 2SA1530A FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE Ultra super mini type DESCRIPTION OUTLINE DRAWING Unit：ｍｍ 2SA1530A is a super mini package resin sealed silicon PNP epitaxial transistor, It is designed for low frequency voltage application.


    Original     		PDF 2SA1530A 2SA1530A -100mAIB -10mA JEITASC-59 2SA1530

    transistor 1012 TO252

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1260 PNP SILICON TRANSISTOR POWER TRANSISTOR „ DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. „ FEATURES *High breakdown voltage and high current. BVCEO= -80V, IC= -1A *Good hFE linearity.


    Original     		PDF 2SB1260 2SB1260 2SB1260L 2SB1260-x-AB3-R 2SB1260L-x-AB3-R 2SB1260-x-TN3-R 2SB1260L-x-TN3-R 2SB1260-x-TN3-T 2SB1260L-x-TN3-T OT-89 transistor 1012 TO252

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1260 PNP SILICON TRANSISTOR POWER TRANSISTOR  DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor.  FEATURES * High breakdown voltage and high current. * BVCEO= -80V, IC= -1A * Good hFE linearity.


    Original     		PDF 2SB1260 2SB1260 2SB1260G-x-AB3-R 2SB1260G-x-TN3-R OT-89 O-252 QW-R208-017

    smd transistor 2g

    Abstract: MARKING 25 SMD PNP TRANSISTOR smd transistor 24 sot23 SMD transistor code 24 transistor SMD 2h TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE 50 TRANSISTOR SMD CODE PACKAGE SOT23 smd transistor marking code 24 SMD TRANSISTOR MARKING DE
    Text: SMD General Purpose Transistor PNP MMBTA55/MMBTA56 SMD General Purpose Transistor (PNP) Features • PNP Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications • RoHS compliance SOT-23 Mechanical Data Case: SOT-23, Plastic Package


    Original     		PDF MMBTA55/MMBTA56 OT-23 OT-23, MIL-STD-202G, MMBTA55 MMBTA56 smd transistor 2g MARKING 25 SMD PNP TRANSISTOR smd transistor 24 sot23 SMD transistor code 24 transistor SMD 2h TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE 50 TRANSISTOR SMD CODE PACKAGE SOT23 smd transistor marking code 24 SMD TRANSISTOR MARKING DE

    2SB1260

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1260 PNP SILICON TRANSISTOR POWER TRANSISTOR „ DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. „ FEATURES * High breakdown voltage and high current. * BVCEO= -80V, IC= -1A * Good hFE linearity.


    Original     		PDF 2SB1260 2SB1260 2SB1260L 2SB1260G 2SB1260-x-AB3-R 2SB1260-x-TN3-R 2SB1260L-x-AB3-R 2SB1260L-x-TN3-R 2SB1260G-x-AB3-R 2SB1260G-x-TN3-R

    2SB1260

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1260 PNP SILICON TRANSISTOR POWER TRANSISTOR 1 DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. SOT-89 FEATURES *High breakdown voltage and high current. BVCEO= -80V, IC= -1A *Good hFE linearity.


    Original     		PDF 2SB1260 2SB1260 OT-89 O-252 2SB1260L 2SB1260-x-AB3-R 2SB1260L-x-AB3-R 2SB1260-x-TN3-R 2SB1260L-x-TN3-R 2SB1260-x-TN3-T

    2SA2167

    Abstract: 2SA21
    Text: 2SA2167 FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION 2SA2167 is a silicon PNP epitaxial type transistor. It is designed with high voltage, high Collector current, high Collector dissipation. Unit：mm 4.6MAX 0.53


    Original     		PDF 2SA2167 2SA2167 48MAX 2SA21

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO.,LTD TIP32C PNP SILICON TRANSISTOR PNP EXPITAXIAL PLANAR TRANSISTOR „ DESCRIPTION The UTC TIP32C is a PNP epitaxial planar transistor, designed for using in general purpose amplifier and switching applications. „ FEATURES * Complement to TIP31C


    Original     		PDF TIP32C TIP32C TIP31C TIP32CL-TA3-T TIP32CG-TA3-T TIP32CL-T60-K TIP32CG-T60-K TIP32CL-T6S-K TIP32CG-T6S-K TIP32CL-TN3-R

    TIP32CG

    Abstract: TIP32C Silicon PNP Epitaxial Planar Transistor to220 TIP32CL-TN3-R TIP31C TIP32C-TN3-R TIP31c PNP Transistor TIP32CL UTCTIP32C
    Text: UNISONIC TECHNOLOGIES CO.,LTD TIP32C PNP SILICON TRANSISTOR PNP EXPITAXIAL PLANAR TRANSISTOR „ DESCRIPTION The UTC TIP32C is a PNP epitaxial planar transistor, designed for using in general purpose amplifier and switching applications. „ FEATURES * Complement to TIP31C


    Original     		PDF TIP32C TIP32C TIP31C TIP32CL TIP32CG TIP32C-TA3-T TIP32C-TN3-R TIP32CL-TA3-T TIP32CL-TN3-R TIP32CG-TA3-T TIP32CG Silicon PNP Epitaxial Planar Transistor to220 TIP32CL-TN3-R TIP31C TIP32C-TN3-R TIP31c PNP Transistor TIP32CL UTCTIP32C

    2SA1283

    Abstract: 2SA1283 transistor Silicon PNP epitaxial
    Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1283 FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA1283 is a silicon PNP epitaxial type transistor designed tor relay OUTLINE DRAWING Uni' f 5.1 MAX drive or power supply application.


    OCR Scan     		PDF 2SA1283 2SA1283 2SC3243. -500mA, -25mA) 900mW 2SA1283 transistor Silicon PNP epitaxial

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1364 FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA1364 is a silicon PNP epitaxial type transistor. It designed with OUTLINE DRAWING high voltage, high collector current and high collector dissipation.


    OCR Scan     		PDF 2SA1364 2SA1364 2SC3444. -500mA, -25mA) 500mW SC-62