PNP HFE 120 Search Results

PNP HFE 120 Result Highlights (5)

Part	Manufacturer	Description
2SA1213	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini
TTA011	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini
TTA2070	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-1 A / hFE=200~500 / VCE(sat)=-0.20V / tf=90 ns / PW-Mini
TTA013	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-120 V / IC=-2.5 A / hFE=120~240 / VCE(sat)=-0.32 V / tf=65 ns / PW-Mini
TPCP8606	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PS-8

PNP HFE 120 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
KTA2013F Abstract: tfsm package TFSM Contextual Info: SEMICONDUCTOR KTA2013F TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E ・Excellent hFE Linearity B : hFE 0.1mA /hFE(2mA)=0.95(Typ.). ・High hFE : hFE=120~400. 3 K ・Thin Fine Pitch Small Package.	Original	KTA2013F KTC4074F. -100mA, -10mA KTA2013F tfsm package TFSM	PDF
Contextual Info: UTC 2SA1300 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXAL TYPE DESCRIPTION Strobo Flash Applications. Medium Power Amplifier Applications. FEATURES High DC Current Gain and Excellent hFE Linearity. hFE 1 =140-600, (VCE= -1V,IC= -0.5A) *hFE(2)=60(Min.),120(Typ.),(VCE= -1V,IC= -4A)	Original	2SA1300 -50mA) -50mA QW-R201-045	PDF
2SA1300 Abstract: 2sA1300 transistor transistor 2A pnp Contextual Info: UTC 2SA1300 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXAL TYPE DESCRIPTION Strobo Flash Applications. Medium Power Amplifier Applications. FEATURES High DC Current Gain and Excellent hFE Linearity. hFE 1 =140-600, (VCE= -1V,IC= -0.5A) *hFE(2)=60(Min.),120(Typ.),(VCE= -1V,IC= -4A)	Original	2SA1300 -50mA) QW-R201-045 2SA1300 2sA1300 transistor transistor 2A pnp	PDF
Contextual Info: SEMICONDUCTOR KTA1517S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES ・High Voltage : VCEO=-120V. ・Excellent hFE Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). ・High hFE: hFE=200～700. ・Low Noise : NF=1dB(Typ.), 10dB(Max.).	Original	KTA1517S -120V. KTC3911S. -120V, -10mA,	PDF
Contextual Info: UTC 2SA1300 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXAL TYPE DESCRIPTION Strobo Flash Applications. Medium Power Amplifier Applications. FEATURES 1 High DC Current Gain and Excellent hFE Linearity. hFE 1 =140-600, (VCE= -1V,IC= -0.5A) *hFE(2)=60(Min.),120(Typ.),(VCE= -1V,IC= -4A)	Original	2SA1300 -50mA) OT-89 -50mA QW-R208-012	PDF
2SA1300 Abstract: QW-R208-012 Contextual Info: UTC 2SA1300 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXAL TYPE DESCRIPTION Strobo Flash Applications. Medium Power Amplifier Applications. FEATURES 1 High DC Current Gain and Excellent hFE Linearity. hFE 1 =140-600, (VCE= -1V,IC= -0.5A) *hFE(2)=60(Min.),120(Typ.),(VCE= -1V,IC= -4A)	Original	2SA1300 -50mA) OT-89 QW-R208-012 2SA1300	PDF
2SA21 Abstract: 2SA2154 2SC6026 Contextual Info: 2SA2154 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154 General-Purpose Amplifier Applications Unit: mm 0.6±0.05 • Excellent hFE linearity : hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.) • High hFE : hFE = 120~400 • Complementary to 2SC6026	Original	2SA2154 2SC6026 2SA21 2SA2154 2SC6026	PDF
Contextual Info: 2SA2154 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154 General-Purpose Amplifier Applications Unit: mm 0.6±0.05 • Excellent hFE linearity : hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.) • High hFE : hFE = 120~400 • Complementary to 2SC6026	Original	2SA2154 2SC6026	PDF
2SA1832FV Abstract: 2SC4738FV Contextual Info: 2SA1832FV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1832FV Audio Frequency General Purpose Amplifier Applications High hFE: hFE = 120 to 400 • Excellent hFE linearity : hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.) 1 2 3 Maximum Ratings (Ta = 25°C)	Original	2SA1832FV 2SC4738FV 2SA1832FV 2SC4738FV	PDF
HN4A06J Contextual Info: HN4A06J TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN4A06J Unit: mm Audio Frequency General Purpose Amplifier Applications High voltage : VCEO = −120V High hFE : hFE = 200~700 Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.)	Original	HN4A06J -120V HN4A06J	PDF
HN4A51J Contextual Info: HN4A51J TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN4A51J Unit: mm Audio Frequency General Purpose Amplifier Applications High voltage : VCEO = −120V High hFE : hFE = 200~700 Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.)	Original	HN4A51J -120V HN4A51J	PDF
hn3a51f Contextual Info: HN3A51F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN3A51F Unit: mm Audio Frequency General Purpose Amplifier Applications High voltage : VCEO = −120V High hFE : hFE = 200~700 Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.)	Original	HN3A51F -120V hn3a51f	PDF
Contextual Info: SEMICONDUCTOR KTA1517S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES ・High Voltage : VCEO=-120V. E B L L ・Excellent hFE Linearity ・High hFE: hFE=200～700. D : hFE 0.1mA /hFE(2mA)=0.95(Typ.). 3 G A 2 H ・Low Noise : NF=1dB(Typ.), 10dB(Max.).	Original	-120V. KTA1517S KTC3911S. -120V, -10mA,	PDF
KTA2017 Abstract: KTC4077 Contextual Info: SEMICONDUCTOR KTA2017 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES E ・High Voltage : VCEO=-120V. M B M ・Excellent hFE Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). D 3 1 G ・High hFE: hFE=200～700. J A 2 ・Low Noise : NF=1dB(Typ.), 10dB(Max.).	Original	KTA2017 -120V. KTC4077. 270Hz KTA2017 KTC4077	PDF

Contextual Info: HN4A06J TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN4A06J Unit: mm Audio Frequency General Purpose Amplifier Applications z High voltage : VCEO = −120V z High hFE : hFE = 200~700 z Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.)	Original	HN4A06J -120V	PDF
2SA1832FT Abstract: 2SC4738F Contextual Info: 2SA1832FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1832FT Audio frequency General Purpose Amplifier Applications • High voltage: VCEO = −50 V • High current: IC = −150 mA (max) • High hFE: hFE = 120 to 400 • Excellent hFE linearity: hFE (IC = −0.1 mA)/	Original	2SA1832FT 2SC4738F 2SA1832FT 2SC4738F	PDF
2SA1832FT Abstract: 2SC4738F Contextual Info: 2SA1832FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1832FT Audio frequency General Purpose Amplifier Applications • High voltage: VCEO = −50 V • High current: IC = −150 mA (max) • High hFE: hFE = 120 to 400 • Excellent hFE linearity: hFE (IC = −0.1 mA)/	Original	2SA1832FT 2SC4738F 2SA1832FT 2SC4738F	PDF
Contextual Info: HN4A51J TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN4A51J Audio Frequency General Purpose Amplifier Applications z z z z Unit: mm High voltage : VCEO = −120V High hFE : hFE = 200 to 700 Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.)	Original	HN4A51J	PDF
Contextual Info: HN4A06J TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN4A06J Unit: mm Audio Frequency General Purpose Amplifier Applications z High voltage : VCEO = −120V z High hFE : hFE = 200 to 700 z Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.)	Original	HN4A06J	PDF
Contextual Info: HN3A51F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN3A51F Unit: mm Audio Frequency General Purpose Amplifier Applications z z z z High voltage : VCEO = −120V : hFE = 200 to 700 High hFE Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.)	Original	HN3A51F	PDF
HN4A51J Contextual Info: HN4A51J TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN4A51J Audio Frequency General Purpose Amplifier Applications z z z z Unit: mm High voltage : VCEO = −120V High hFE : hFE = 200~700 Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.)	Original	HN4A51J -120V HN4A51J	PDF
KTA1517 Abstract: KTC3911 2.T transistor planar Contextual Info: _ SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. KTA1517 EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES • High Voltage : V ceo = -1 2 0 V . • Excellent hFE Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). • High hFE: hFE=200~700.	OCR Scan	KTA1517 -120V. KTC3911. 270Hz KTA1517 KTC3911 2.T transistor planar	PDF
Contextual Info: HN3A51F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN3A51F Unit: mm Audio Frequency General Purpose Amplifier Applications z z z z High voltage : VCEO = −120V : hFE = 200~700 High hFE Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.)	Original	HN3A51F	PDF
HN3A51F Contextual Info: HN3A51F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN3A51F Unit: mm Audio Frequency General Purpose Amplifier Applications z z z z High voltage : VCEO = −120V : hFE = 200~700 High hFE Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.)	Original	HN3A51F -120V HN3A51F	PDF

PNP HFE 120 Search Results

PNP HFE 120 Result Highlights (5)

PNP HFE 120 Datasheets Context Search

KTA2013F

2SA1300

2SA1300

2SA21

2SA1832FV

HN4A06J

HN4A51J

hn3a51f

KTA2017

2SA1832FT

2SA1832FT

HN4A51J

KTA1517

HN3A51F