PNP HIGH EMITTER BASE VOLTAGE 15 VOLT Search Results

2N5153

Contextual Info: PNP SILICON TRANSISTOR HIGH-FREQUENCY POWER TRANSISTORS • 15 m J Reverse Energy Rating with Ic = 10 A and 4 V Reverse Bias MAXIMUM RATINGS Rating Collector-Em itter Voltage 1 Collector-Base Voltage Emitter-Base Voltage Collector C u rren t - Continuous

sm 170 380

Abstract: ZDT1147 IB 115 DSA003723
Contextual Info: SM-8 DUAL PNP MEDIUM POWER HIGH GAIN TRANSISTORS ZDT1147 ISSUE 1 - AUGUST 1997 C1 B1 C1 E1 C2 B2 C2 E2 SM-8 8 LEAD SOT223 PARTMARKING DETAIL – ZDT1147 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO -15 V Collector-Emitter Voltage

mjl4281

Abstract: MJL4302A mjl4302 MJL428
Contextual Info: MJL4281A NPN MJL4302A (PNP) Preferred Device Complementary NPN−PNP Silicon Power Bipolar Transistors The MJL4281A and MJL4302A are PowerBaset power transistors for high power audio. • 350 V Collector−Emitter Sustaining Voltage • Gain Complementary:

MJL4281A

Abstract: MJL4302A mjl 350 mjl4302
Contextual Info: MJL4281A NPN MJL4302A (PNP) Preferred Device Complementary NPN−PNP Silicon Power Bipolar Transistors The MJL4281A and MJL4302A are PowerBaset power transistors for high power audio. • 350 V Collector−Emitter Sustaining Voltage • Gain Complementary:

IC 7418

Abstract: IC 7418 by national semiconductor 7418 national 2n2222 RF Transistor 2n2222 PNP Transistor 2N2222 equivalent LM195 2N2222 application note emitter follower A-083081-2 tl 2n2222
Contextual Info: INTRODUCTION Overload protection is perhaps most necessary in power circuitry This is shown by recent trends in power transistor technology Safe-area voltage and current handling capability have been increased to limits far in excess of package power dissipation In RF transistors devices are now available and able to withstand badly mismatched loads without

MJL4281A

Abstract: MJL4302AG
Contextual Info: MJL4281A NPN MJL4302A (PNP) Preferred Device Complementary NPN−PNP Silicon Power Bipolar Transistors The MJL4281A and MJL4302A are PowerBaset power transistors for high power audio. Features • 350 V Collector−Emitter Sustaining Voltage • Gain Complementary:

MJL4302AG

Abstract: mjl4302a mjl4281 MJL4281AG MJL4281A SEC1100 ALL TRANSISTORS
Contextual Info: MJL4281A NPN MJL4302A (PNP) Preferred Device Complementary NPN−PNP Silicon Power Bipolar Transistors The MJL4281A and MJL4302A are PowerBaset power transistors for high power audio. Features • 350 V Collector−Emitter Sustaining Voltage • Gain Complementary:

2N2222 application note emitter follower

Abstract: PNP Transistor 2N2222 equivalent 2n2222 npn transistor general purpose LM195 AN-110 LM105 Pin layout for a 2N2222 transistor A0830
Contextual Info: National Semiconductor Application Note 110 April 1998 INTRODUCTION Overload protection is perhaps most necessary in power circuitry. This is shown by recent trends in power transistor technology. Safe-area, voltage and current handling capability have been increased to limits far in excess of package

Contextual Info: MJL4281A NPN MJL4302A (PNP) Complementary NPN-PNP Silicon Power Bipolar Transistors The MJL4281A and MJL4302A are power transistors for high power audio. Features • 350 V Collector−Emitter Sustaining Voltage • Gain Complementary: • • • • Gain Linearity from 100 mA to 5 A

2N2222 die

Abstract: light activated switch 2N2222 application note emitter follower AN-110 LM105 LM195 2N2222 NPN Transistor features 12v bulb national 2n2222 equivalent component of transistor 2N2222
Contextual Info: INTRODUCTION Overload protection is perhaps most necessary in power circuitry. This is shown by recent trends in power transistor technology. Safe-area, voltage and current handling capability have been increased to limits far in excess of package power dissipation. In RF transistors, devices are now available and able to withstand badly mismatched loads without

transistor a750

Contextual Info: NSS40302PDR2G Complementary 40 V, 6.0 A, Low VCE sat Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed

C40302

Abstract: NSS40302PDR2G
Contextual Info: NSS40302PDR2G Complementary 40 V, 6.0 A, Low VCE sat Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed

Contextual Info: NSS40302PDR2G Complementary 40 V, 6.0 A, Low VCE sat Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed

chip die npn transistor

Abstract: MM1007
Contextual Info: 0PLESSEY FEBRUARY 1989 Semiconductors MM Series Macrochip Analog Semicustom Arrays DESCRIPTION The MM "Macrochip" series utilizes a standard bipolar pro­ cess allowing for operation at voltages up to 20V. Typical circuit blocks for the MM series include pre-amplifiers, com­

Contextual Info: MJE4343 NPN , MJE4353 (PNP) High-Voltage - High Power Transistors . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. http://onsemi.com Features 16 AMPS POWER TRANSISTORS COMPLEMENTARY SILICON 160 VOLTS

Contextual Info: MJE4343 NPN , MJE4353 (PNP) High-Voltage - High Power Transistors . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. http://onsemi.com Features 16 AMPS POWER TRANSISTORS COMPLEMENTARY SILICON 160 VOLTS

Contextual Info: KSB817 PNP PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER • High Current Capability • High Power Dissipation • Complementary to KSD1047 ABSOLUTE MAXIMUM RATINGS C haracteristic Symbol Rating U nit Collector Base Voltage VcBO - 160

op amp 741 model PSpice

Abstract: pnp transistor 3609 pnp npn dual emitter connected plessey capacitor MM-10004 transistor 2x MM1008 DN660 me 4946 operational amplifier discrete schematic
Contextual Info: Q PLESSEY FEBRUARY 1989 Semiconductors MM Series Macrochip Analog Semicustom Arrays DESCRIPTION The MM "Macrochip" series utilizes a standard bipolar pro­ cess allowing for operation at voltages up to 20V. Typical circuit blocks for the MM series include pre-amplifiers, com­

2SA2160

Abstract: 2SA2149 2SC6005 RQW200 rdx100n45 RQA200N03 rqw200n03 RLA130N03 rdx*100n45 2sc6027
Contextual Info: 2005 Transistor New Products Ver.1 MOS FET Series Low VCE sat Miniature Digital Transistor Series Low VCE(sat) Transistor Series Endured Discharge Voltage/ High Speed Switching/ Low Noise Transistor Series Muting Transistor Series MOS FET TUMT/TSMT Series

MJL3281A MJL1302A

Abstract: mjl3281a MJL3281A-D MJL1302A complementary npn-pnp power transistors
Contextual Info: ON Semiconductort NPN MJL3281A* PNP MJL1302A* Complementary NPN-PNP Silicon Power Bipolar Transistor *ON Semiconductor Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS The MJL3281A and MJL1302A are PowerBaset power transistors

MJ3281A

Abstract: MJ1302A Motorola Bipolar Power Transistor Data complementary npn-pnp power transistors transistor pnp 3015 MJ1302 LOW FREQUENCY POWER bipolar npn TRANSISTOR to3 motorola bipolar transistor Motorola Power Transistor
Contextual Info: MOTOROLA Order this document by MJ3281A/D SEMICONDUCTOR TECHNICAL DATA NPN Designer's MJ3281A* PNP MJ1302A*  Data Sheet Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS

MJD253

Contextual Info: MJD243 NPN , MJD253 (PNP) Preferred Device Complementary Silicon Plastic Power Transistor DPAK−3 for Surface Mount Applications Designed for low voltage, low−power, high−gain audio amplifier applications. Features http://onsemi.com 4.0 A, 100 V, 12.5 W

Contextual Info: NJX1675PDR2G Complementary 30 V, 6.0 A, Transistor These devices are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are low voltage motor controls in mass storage

NJX1675PDR2G

Contextual Info: NJX1675PDR2G Complementary 30 V, 6.0 A, Transistor These devices are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are low voltage motor controls in mass storage