PNP LOW SATURATION Search Results

MLP322

Abstract: ZXT4M322 ZXTD4M322TA ZXTD4M322TC
Contextual Info: ZXT4M322 MPPSTM Miniature Package Power Solutions 70V PNP LOW SATURATION TRANSISTOR SUMMARY PNP— VCEO= -70V; RSAT = 117m ; IC= -2.5A DESCRIPTION Packaged in the new innovative 2mm x 2mm MLP Micro Leaded Package outline, this new 4th generation low saturation PNP transistor offers extremely low on state

log sheet air conditioning

Abstract: MLP832 ZXTD3M832 ZXTD3M832TA ZXTD3M832TC
Contextual Info: ZXTD3M832 MPPSTM Miniature Package Power Solutions DUAL 40V PNP LOW SATURATION TRANSISTOR SUMMARY PNP VCEO= -40V; RSAT = 104m ; IC= -3A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP Micro Leaded Package outline, these new 4th generation low saturation dual PNP transistors offer

up2518

Abstract: UP2518G-AE3-R
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UP2518 Preliminary PNP SILICON TRANSISTOR LOW VCE SAT PNP SILICON POWER TRANSISTORS „ FEATURES * Extremely low collector-emitter saturation voltage VCE(SAT) and corresponding extremely low equivalent on-resistance RCE(SAT)

Contextual Info: ZXTD6717E6 COMPLEMENTARY NPN/PNP LOW SATURATION DUAL TRANSISTORS SUMMARY NPN: VCEO=15V; VCE sat =0.1V; IC= 1A; PNP: VCEO=-60V; VCE(sat)=-0.175V; IC= -1A; DESCRIPTION This new combination device comprises a complementary NPN and PNP low saturation transistor housed in the SOT23-6 package. Users benefit from very

SMD TRANSISTOR MARKING 2e

Abstract: 2e SMD PNP TRANSISTOR
Contextual Info: PBSS5130PAP 30 V, 1 A PNP/PNP low VCEsat BISS transistor 12 December 2012 Product data sheet 1. General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PBSS3540F 40 V low VCEsat PNP transistor Product specification 2001 Jul 13 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor PBSS3540F FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage

PNP TRANSISTOR

Abstract: PBSS4140V PBSS5140V
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS5140V 40 V low VCEsat PNP transistor Objective specification 2001 Oct 19 Philips Semiconductors Objective specification 40 V low VCEsat PNP transistor PBSS5140V FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage

PBSS4160

Abstract: PBSS4160DS PBSS5160DS
Contextual Info: PBSS5160DS 60 V, 1 A PNP/PNP low VCEsat BISS transistor Rev. 01 — 16 July 2004 Objective data sheet 1. Product profile 1.1 General description PNP/PNP low VCEsat (BISS) transistor pair in a SOT457 (SC-74) plastic package. NPN complement: PBSS4160DS. 1.2 Features

TRANSISTOR SMD MARKING CODE 2P

Abstract: DFN2020 transistor marking codes 2P transistor footprint
Contextual Info: PBSS5260PAP 60 V, 2 A PNP/PNP low VCEsat BISS transistor 12 December 2012 Product data sheet 1. General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UP2518 PNP SILICON TRANSISTOR LOW VCE SAT PNP SILICON POWER TRANSISTORS FEATURES 3 * Extremely low collector-emitter saturation voltage VCE(SAT) and corresponding extremely low equivalent on-resistance RCE(SAT) (97mΩ at 1.5A)

ZXTD720MC

Contextual Info: OBSOLETE - PLEASE USE ZXTD720MC ZXTD3M832 MPPSTM Miniature Package Power Solutions DUAL 40V PNP LOW SATURATION TRANSISTOR SUMMARY PNP VCEO= -40V; RSAT = 104m ; IC= -3A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP Micro Leaded Package outline, these new 4th generation low saturation dual PNP transistors offer

up2518

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UP2518 Preliminary PNP TRANSISTOR LOW VCE SAT PNP SILICON POWER TRANSISTORS „ FEATURES *Extremely low collector-emitter saturation voltage VCE(SAT) and corresponding extremely low equivalent on-resistance RCE(SAT) (97mΩ at 1.5A)

transistor pnp VCEO 12V Ic 1A

Abstract: ZXTD6717E6 ZXTD6717E6TA ZXTD6717E6TC transistor pnp 12V 1A Continuous Current Peak
Contextual Info: ZXTD6717E6 COMPLEMENTARY NPN/PNP LOW SATURATION DUAL TRANSISTORS SUMMARY NPN: VCEO=15V; VCE sat =0.1V; IC= 1.5A; PNP: VCEO=-12V; VCE(sat)=-0.175V; IC= -1.25A; DESCRIPTION This new combination device comprises a complementary NPN and PNP low saturation transistor housed in the SOT23-6 package. Users benefit from very

PNP TRANSISTOR SOT666

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS5240V 40 V low VCEsat PNP transistor Product specification 2003 Jan 30 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor PBSS5240V FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage VCEsat

marking 52 sot363

Abstract: MARKING CODE 24 TRANSISTOR PNP TRANSISTOR SOT363 SOT363 flash sot89 footprint PBSS4240Y PBSS5240Y 08381
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET age MBD128 PBSS5240Y 40 V low VCEsat PNP transistor Product specification 2001 Oct 24 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor PBSS5240Y FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UP2855 Preliminary PNP SILICON TRANSISTOR PNP MEDIUM POWER LOW SATURATION TRANSISTOR „ DESCRIPTION The UTC UP2855 is a transistor with low saturation voltage. It provides customers with very low on-state losses that makes it

PBSS5140D

Abstract: PNP TRANSISTOR SOT457
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET halfpage M3D302 PBSS5140D 40 V low VCEsat PNP transistor Product specification 2001 Nov 15 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor PBSS5140D QUICK REFERENCE DATA FEATURES • Low collector-emitter saturation voltage

free transistor and ic equivalent data

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS5240V 40 V low VCEsat PNP transistor Product specification 2003 Jan 30 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor PBSS5240V FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage VCEsat

marking code TR2

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 PBSS4240DPN 40 V low VCEsat NPN/PNP transistor Product specification 2003 Feb 20 Philips Semiconductors Product specification 40 V low VCEsat NPN/PNP transistor FEATURES • Low collector-emitter saturation voltage VCEsat

PNP TRANSISTOR SOT457

Abstract: marking code SC-74
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET age MBD128 PBSS5320D 20 V low VCEsat PNP transistor Product specification 2002 Jun 12 Philips Semiconductors Product specification 20 V low VCEsat PNP transistor PBSS5320D FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage

PBSS4350SPN

Abstract: PBSS4350SS PBSS5350SS
Contextual Info: PBSS5350SS 50 V, 2.7 A PNP/PNP low VCEsat BISS transistor Rev. 01 — 3 April 2007 Product data sheet 1. Product profile 1.1 General description PNP/PNP double low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD) plastic package.

PBSS4240DPN

Abstract: marking code TR2
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D302 PBSS4240DPN 40 V low VCEsat NPN/PNP transistor Product data sheet 2003 Feb 20 NXP Semiconductors Product data sheet 40 V low VCEsat NPN/PNP transistor FEATURES • Low collector-emitter saturation voltage VCEsat

PBSS4240V

Abstract: PBSS5240V
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS5240V 40 V low VCEsat PNP transistor Product data sheet 2003 Jan 30 NXP Semiconductors Product data sheet 40 V low VCEsat PNP transistor PBSS5240V FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage VCEsat

sot23 transistor marking ZF

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBSS5240T 40 V low VCEsat PNP transistor Product specification 2001 Oct 31 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor PBSS5240T FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage