PNP TRANSISTER SYMBOL Search Results

IC 714

Contextual Info: Low Noise Matched Transister Array ICs TT1300 Series DESCRIPTION The TT1300 series are large-geometry, 4-transistor, monolithic NPN and/or PNP arrays exhibiting both high speed and low noise, with excellent parameter matching between transistors of the same gender. With typical base-spreading

Contextual Info: EMZ51 Datasheet General Purpose Transister dual transistors <For Tr1(NPN)> l Outline Parameter VCEO Value IC 200mA EMZ51 (SC-107C) Parameter VCEO Value -20V IC -200mA EMT6 20V <For Tr2(PNP)>

Contextual Info: EMZ52 Datasheet General Purpose Transister dual transistors <For Tr1(NPN)> l Outline Parameter VCEO Value IC 100mA EMZ52 (SC-107C) Parameter VCEO Value -50V IC -100mA EMT6 50V <For Tr2(PNP)>

transister

Abstract: 45 transister pnp transister symbol 2SA1362 S-8470 S-8470AFS S-8470BFS S-8470CFS types of transister
Contextual Info: Contents Features . 1 Applications. 1 Selection Guidelines for RESET and the Watchdog Timer. 1 Pin Assignment . 1

BC847PN

Abstract: pnp transister symbol transister NPN TRANSISTER Tr2 transister 1A TRANSISTER chip transister marking B2 NPN/PNP transistor Silicon Transister
Contextual Info: BC847PN NPN - PNP Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 FEATURE       Epitaxial Die Construction Two internal isolated NPN/PNP transistors in one package Power Dissipation PCM : 0.2 W Temp. = 25˚C

Contextual Info: EMD59 Datasheet Complex Digital Transistors Bias Resistor Built-in Transistors <For DTr1(NPN)> l Outline Parameter Value VCC 50V IC(MAX.) 100mA R1 10kΩ EMD59 R2 47kΩ (SC-107C) EMT6 <For DTr2(PNP)>

Contextual Info: EMD53 Datasheet Complex Digital Transistors Bias Resistor Built-in Transistors <For DTr1(NPN)> l Outline Parameter Value VCC 50V IC(MAX.) 100mA R1 10kΩ EMD53 R2 10kΩ (SC-107C) EMT6 <For DTr2(PNP)>

Contextual Info: EMD52 Datasheet Complex Digital Transistors Bias Resistor Built-in Transistors <For DTr1(NPN)> l Outline Parameter Value VCC 50V IC(MAX.) 100mA R1 22kΩ EMD52 R2 22kΩ (SC-107C) EMT6 <For DTr2(PNP)>

Contextual Info: EMD72 Datasheet Complex Digital Transistors Bias Resistor Built-in Transistors <For DTr1(NPN)> l Outline Parameter Value VCC 50V IC(MAX.) 100mA R1 4.7kΩ EMD72 R2 47kΩ (SC-107C) EMT6 <For DTr2(PNP)>

Contextual Info: EMD62 Datasheet Complex Digital Transistors Bias Resistor Built-in Transistors <For DTr1(NPN)> l Outline Parameter Value VCC 50V IC(MAX.) 100mA R1 47kΩ EMD62 R2 47kΩ (SC-107C) EMT6 <For DTr2(PNP)>

Contextual Info: O K I semiconductor MSA4709 SUBSCRIBER LINE INTERFACE CIRCUIT GENERAL DESCRIPTION The MSA4709 is designed to provide BSH functions and to meet PABX transmission performance requirements. This device can replace the hybrid transformer circuit. FEATURES • B Battery feed , S (Supervision), and H

transister

Abstract: DC-12 DC-13 EN50081-2 EN50082-2 UZKB111 UZKB1115 UZKB811 UZKB812
Contextual Info: UZKB1.fm 1 y [ W Q O O O N U P O œ @ y j œ @ O P P P R “ UZKB1 Series SMALL/SLIM OBJECT DETECTION AREA SENSORS CROSS-BEAM SCANNING SYSTEM TO DETECT SLIM OBJECTS Letter or Visiting Card Detectable! Emitting and Receiving Element Pitch: 10mm .394inch Just 10mm .394inch Thick

IVD12

Abstract: PABX current rating MSA4709 IVD10 4w-2w hybrid transister IV-D-20 900J2 DQG7512 FREE transisters
Contextual Info: O K I SEMICONDUCTOR GROUP 23E D • O K I semiconductor MSA4709_ b7 2 4 2 4 0 0007512 _ ' ~r-7s-n-n SUBSCRIBER LINE IN TERFACE CIRCUIT G EN ER A L DESCRIPTION The MSA4709 is designed to provide BSH functions and to meet PABX transmission performance

UZZ8031

Abstract: 748 DIODE UZA801 UZA802 UZN11 UZN115 UZZ8032 UZZ8131 UZZ8132 acceleration sensor matsushita
Contextual Info: UZN10.fm 1 y [ W Q O O O N U P O œ @ y j œ @ O P P X “ UZN10 Series WATER DETECTION SENSORS DETECTS WATER.RELIABLY! Strong beam Power As the beam power is strong, its beam can pass through not only translucent containers PFA tanks, etc. but also opaque containers of shampoo bottles,

transister

Abstract: NPN TRANSISTER BC847BS SC70-6 Dual General Purpose Transistors SC70-6
Contextual Info: BC847BS NPN Multi-chip General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 200 mA. Sourced from Process 07. E2 B2 Dual NPN Signal Transister C1 NOTE: The pinouts are symmetrical; pin 1 and pin

VTR5041

Contextual Info: AN3220K £7*71-f i 1C AN3220K VTR 4 m m , 15^ y* >^[118ft/R ecording Amplifier Circuit for Video Signal 4-Head Type m Unit : mm AN 3220 K !i, VTR504- • • w »20 4 1 »17 »16 3315 »14 +1 5 1 m. - 6 Œ ¿ 7 « ^ 8<r 91 10C > h x > 77-> X rt l l • X ' f 7 f > / h 7 > x X ^ |* J jt

AN3220K

Abstract: transister pnp transister symbol npn 14 pin transister 3S12 AN3220
Contextual Info: ¥ y * x m AN3220K \ c AN3220K VTR 4 y''*’y K fflI5 ^ 7 * > '^ ,II]ïft/// R ecording A m plifier Circuit fo r Video S ign al 4-H ead Type • m m AN 3220K (±, VTRÎ04- ■« m . * X ^ 7 f / / F 7 > x X i ' rt/t • iLltvir'ii^ i. •Vcc —9V ■ 1 <1

MSA4709A

Abstract: 24v 8 channel Relay driver transistor ZR Equivalent of transistor tip 420 TIP 22 transistor tip 420 transistor pabx transister relay driver circuit using transistor pnp transister symbol
Contextual Info: E2A0032-16-X0 ¡ Semiconductor MSA4709A ¡ Semiconductor This version: MSA4709A Jan. 1998 Previous version: Nov. 1996 Subscriber Line Interface Circuit GENERAL DESCRIPTION The MSA4709A is designed to provide BSH functions and to meet PABX transmission performance

JAM transister

Abstract: A4709A
Contextual Info: E2A0032-16-XO O K I Semiconductor MSA4709A This version: Jan. 1998 Previous version: Nov. 1996 S ubscriber Line Interface Circuit G ENERAL DESCRIPTION The MS A4709A is designed to provide BSH functions and tomeetPABX transmission performance requirements.

R1152N064B

Abstract: 2SA1645 2SB1642 R1152N R1152N025B R1152N108B sot 23-5 transister
Contextual Info: R1152N SERIES High Input Voltage Tolerant Boost Voltage Regulator NO.EA-108-0601 OUTLINE The R1152N Series are CMOS-based positive voltage regulator controller ICs with high output voltage accuracy, low supply current. The high output current regulator can be composed with this IC, an external power transistor, and capacitors.

R1152N034B

Abstract: R1152N04 R1152N114B R1152N033B R1152N038B mark code SA package sot-23-5
Contextual Info: R1152N SERIES High Input Voltage Tolerant Boost Voltage Regulator NO.EA-108-0601 OUTLINE The R1152N Series are CMOS-based positive voltage regulator controller ICs with high output voltage accuracy, low supply current. The high output current regulator can be composed with this IC, an external power transistor, and capacitors.

KY2 transistor

Abstract: transistor ky2 4w-2w hybrid hitachi slic application note transistor bsh 103 zx 55
Contextual Info: O K I Semiconductor MSA4709A Subscriber Line interface Circuit GENERAL DESCRIPTION The MSA4709A is designed to provide BSH functions and to meet PABX transmission performance requirements. This device can replace the hybrid transformet circuit. FEATURES • B Battery feed , S (Supervision), and H (Hybrid) functions integrated on chip.

IVD12

Abstract: IVD10 4709 bt bt 4709 hitachi slic application note 48V 2w zener diode SCR SN 100
Contextual Info: O K I sem iconductor M SA 4709 / SUBSCRIBER LINE INTERFACE CIRCUIT GENERAL DESCRIPTION The M5A4709 is designed to provide BSH functions and to m eet PA B X transmission perform ance requirements. This device can replace the hybrid transform er circuit. FEATURES

RTL8306

Abstract: RTL8306S HH-1M1608-121JT RTL8306SD 1N4001 SMA hh-1m1608 Pitch HEADER 25X2 W3150A WIZ850SW 0603 led bicolor
Contextual Info: WIZ850SW User Manual Ver. 1.0 2009 WIZnet Inc. All Rights Reserved. For more information, visit our website at www.wiznet.co.kr WIZ850SW User Manual Document History Information Revision Ver. 1.0 Data March 20, 2009 Description Release with WIZ850SW Launching