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    PNP TRANSISTOR SOT666 Search Results

    PNP TRANSISTOR SOT666 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    PNP TRANSISTOR SOT666 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NXP SMD TRANSISTOR MARKING CODE

    Abstract: PMBT3906VS smd "code rc" transistor transistor smd code marking 102 ZI Marking Code transistor
    Text: PMBT3906VS 40 V, 200 mA PNP/PNP switching transistor Rev. 01 — 20 August 2009 Product data sheet 1. Product profile 1.1 General description PNP/PNP double switching transistor in a SOT666 ultra small and flat lead Surface-Mounted Device SMD plastic package.


    Original     		PDF PMBT3906VS OT666 PMBT3906VS PMBT3904VS PMBT3946VPN AEC-Q101 771-PMBT3906VS115 NXP SMD TRANSISTOR MARKING CODE smd "code rc" transistor transistor smd code marking 102 ZI Marking Code transistor

    smd marking rc pnp transistor

    Abstract: MARKING SMD PNP TRANSISTOR BV ZD 103 ma TRANSISTOR SMD MARKING CODES K TRANSISTOR SMD MARKING CODE transistor SMD MARKING CODE MARKING CODE SMD IC transistor smd code marking 102 smd "code rc" transistor ZI Marking Code transistor
    Text: PMBT3906VS 40 V, 200 mA PNP/PNP switching transistor Rev. 01 — 20 August 2009 Product data sheet 1. Product profile 1.1 General description PNP/PNP double switching transistor in a SOT666 ultra small and flat lead Surface-Mounted Device SMD plastic package.


    Original     		PDF PMBT3906VS OT666 OT666 PMBT3904VS PMBT3946VPN AEC-Q101 PMBT3906VS smd marking rc pnp transistor MARKING SMD PNP TRANSISTOR BV ZD 103 ma TRANSISTOR SMD MARKING CODES K TRANSISTOR SMD MARKING CODE transistor SMD MARKING CODE MARKING CODE SMD IC transistor smd code marking 102 smd "code rc" transistor ZI Marking Code transistor

    MARKING CODE SMD IC

    Abstract: PBSS4220V PBSS5220V NV SMD TRANSISTOR TRANSISTOR SMD MARKING CODE N7
    Text: PBSS5220V 20 V, 2 A PNP low VCEsat BISS transistor Rev. 02 — 8 February 2006 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT666 Surface Mounted Device (SMD) plastic package.


    Original     		PDF PBSS5220V OT666 PBSS4220V. PBSS5220V MARKING CODE SMD IC PBSS4220V NV SMD TRANSISTOR TRANSISTOR SMD MARKING CODE N7

    BCP52

    Abstract: BCX52 PBSS4160V PBSS5160V
    Text: PBSS5160V 60 V, 1 A PNP low VCEsat BISS transistor Rev. 01 — 20 April 2004 Objective data sheet 1. Product profile 1.1 General description PNP low VCEsat (BISS) transistor in a SOT666 plastic package. NPN complement: PBSS4160V. 1.2 Features • ■ ■


    Original     		PDF PBSS5160V OT666 PBSS4160V. BCP52 BCX52. BCX52 PBSS4160V PBSS5160V

    Untitled

    Abstract: No abstract text available
    Text: PBSS5160V 60 V, 1 A PNP low VCEsat BISS transistor Rev. 03 — 14 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough in Small Signals (BISS) transistor in a SOT666 plastic package. NPN complement: PBSS4160V.


    Original     		PDF PBSS5160V OT666 PBSS4160V. BCP52 BCX52 PBSS5160V

    BCP52

    Abstract: BCX52 PBSS4160V PBSS5160V 14508
    Text: PBSS5160V 60 V, 1 A PNP low VCEsat BISS transistor Rev. 02 — 4 April 2005 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough in Small Signals (BISS) transistor in a SOT666 plastic package. NPN complement: PBSS4160V.


    Original     		PDF PBSS5160V OT666 PBSS4160V. BCP52 BCX52 BCX52 PBSS4160V PBSS5160V 14508

    SMD PNP TRANSISTOR

    Abstract: TRANSISTOR SMD MARKING CODES
    Text: PMBT3946VPN 40 V, 200 mA NPN/PNP switching transistor Rev. 01 — 31 August 2009 Product data sheet 1. Product profile 1.1 General description NPN/PNP double switching transistor in a SOT666 ultra small and flat lead Surface-Mounted Device SMD plastic package.


    Original     		PDF PMBT3946VPN OT666 OT666 PMBT3904VS PMBT3906VS PMBT3946VPN SMD PNP TRANSISTOR TRANSISTOR SMD MARKING CODES

    Untitled

    Abstract: No abstract text available
    Text: PBSS5220V 20 V, 2 A PNP low VCEsat BISS transistor Rev. 03 — 14 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT666 Surface Mounted Device (SMD) plastic package.


    Original     		PDF PBSS5220V OT666 PBSS4220V. PBSS5220V

    MARKING SMD IC CODE 2100

    Abstract: TRANSISTOR SMD MARKING CODE 210 philips N7 PBSS5220V MARKING CODE SMD IC TRANSISTOR SMD MARKING CODE OA
    Text: PBSS5220V 20 V, 2 A PNP low VCEsat BISS transistor Rev. 01 — 13 June 2005 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT666 Surface Mounted Device (SMD) plastic package.


    Original     		PDF PBSS5220V OT666 MARKING SMD IC CODE 2100 TRANSISTOR SMD MARKING CODE 210 philips N7 PBSS5220V MARKING CODE SMD IC TRANSISTOR SMD MARKING CODE OA

    PBSS4220V

    Abstract: PBSS5220V
    Text: PBSS5220V 20 V, 2 A PNP low VCEsat BISS transistor Rev. 03 — 14 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT666 Surface Mounted Device (SMD) plastic package.


    Original     		PDF PBSS5220V OT666 PBSS4220V. PBSS5220V PBSS4220V

    BCP52

    Abstract: BCX52 PBSS4160V PBSS5160V
    Text: PBSS5160V 60 V, 1 A PNP low VCEsat BISS transistor Rev. 03 — 14 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough in Small Signals (BISS) transistor in a SOT666 plastic package. NPN complement: PBSS4160V.


    Original     		PDF PBSS5160V OT666 PBSS4160V. BCP52 BCX52 PBSS5160V BCX52 PBSS4160V

    mld700

    Abstract: IC DATE CODE MARKING CODE 13 BC847BVN
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 BC847BVN NPN/PNP general purpose transistor Preliminary specification 2001 Aug 30 Philips Semiconductors Preliminary specification NPN/PNP general purpose transistor FEATURES BC847BVN PINNING • 300 mW total power dissipation


    Original     		PDF M3D744 BC847BVN SC-75/SC-89 OT666 SCA73 613514/1000/01/pp8 mld700 IC DATE CODE MARKING CODE 13

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS3515VS 15 V low VCEsat PNP double transistor Preliminary specification 2001 Sep 27 Philips Semiconductors Preliminary specification 15 V low VCEsat PNP double transistor FEATURES PBSS3515VS QUICK REFERENCE DATA


    Original     		PDF M3D744 PBSS3515VS SC75/SC89 SCA73 613514/01/pp12

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 BC857BV PNP general purpose double transistor Product specification Supersedes data of 2001 Sep 10 2001 Nov 07 Philips Semiconductors Product specification PNP general purpose double transistor FEATURES BC857BV PINNING


    Original     		PDF M3D744 BC857BV SC-75/SC-89 SCA73 613514/02/pp8

    PNP TRANSISTOR SOT666

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMT1 PNP general purpose double transistor Product specification Supersedes data of 2001 Sep 25 2001 Nov 07 Philips Semiconductors Product specification PNP general purpose double transistor FEATURES PEMT1 PINNING


    Original     		PDF M3D744 SC-75/SC-89 SCA73 613514/02/pp8 PNP TRANSISTOR SOT666

    IC DATE CODE

    Abstract: complementary npn-pnp BC847BVN
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 BC847BVN NPN/PNP general purpose transistor Product specification Supersedes data of 2001 Aug 30 2001 Nov 07 Philips Semiconductors Product specification NPN/PNP general purpose transistor FEATURES BC847BVN PINNING


    Original     		PDF M3D744 BC847BVN SC-75/SC-89 SCA73 613514/02/pp8 IC DATE CODE complementary npn-pnp BC847BVN

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 BC857BV PNP general purpose double transistor Preliminary specification 2001 Sep 10 Philips Semiconductors Preliminary specification PNP general purpose double transistor FEATURES BC857BV PINNING • 300 mW total power dissipation


    Original     		PDF M3D744 BC857BV SC-75/SC-89 OT666 BC847BV. SCA73 613514/01/pp8

    PNP TRANSISTOR SOT666

    Abstract: MBK120 PEMB4 transistor K 14
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMB4 PNP resistor-equipped double transistor R1 = 10 kΩ, R2 = open Preliminary specification 2001 Sep 14 Philips Semiconductors Preliminary specification PNP resistor-equipped double transistor R1 = 10 kΩ, R2 = open


    Original     		PDF M3D744 SC-75/SC-89 SCA73 613514/01/pp8 PNP TRANSISTOR SOT666 MBK120 PEMB4 transistor K 14

    PEMF21

    Abstract: MHC706
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMF21 12 V PNP loadswitch Product specification 2004 Jan 12 Philips Semiconductors Product specification 12 V PNP loadswitch PEMF21 QUICK REFERENCE DATA FEATURES • Low VCEsat transistor and resistor-equipped transistor in


    Original     		PDF M3D744 PEMF21 SCA76 R75/01/pp10 PEMF21 MHC706

    PNP TRANSISTOR SOT666

    Abstract: PEMB3
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMB3 PNP resistor-equipped double transistor R1 = 4.7 kΩ, R2 = open Preliminary specification 2001 Sep 14 Philips Semiconductors Preliminary specification PNP resistor-equipped double transistor R1 = 4.7 kΩ, R2 = open


    Original     		PDF M3D744 SC-75/SC-89 SCA73 613514/01/pp8 PNP TRANSISTOR SOT666 PEMB3

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS3515VS 15 V low VCEsat PNP double transistor Product specification Supersedes data of 2001 Sep 27 2001 Nov 07 Philips Semiconductors Product specification 15 V low VCEsat PNP double transistor FEATURES PBSS3515VS


    Original     		PDF M3D744 PBSS3515VS SCA73 613514/02/pp12

    PNP TRANSISTOR

    Abstract: PBSS4140V PBSS5140V
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS5140V 40 V low VCEsat PNP transistor Objective specification 2001 Oct 19 Philips Semiconductors Objective specification 40 V low VCEsat PNP transistor PBSS5140V FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage


    Original     		PDF M3D744 PBSS5140V SCA73 613514/01/pp8 PNP TRANSISTOR PBSS4140V PBSS5140V

    PBSS5140V

    Abstract: PBSS4140V
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS5140V 40 V low VCEsat PNP transistor Product specification Supersedes data of 2001 Oct 19 2002 Mar 20 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor PBSS5140V FEATURES QUICK REFERENCE DATA


    Original     		PDF M3D744 PBSS5140V SCA74 613514/02/pp8 PBSS5140V PBSS4140V

    PBLS4003V

    Abstract: PBLS4003Y
    Text: PBLS4003Y; PBLS4003V 40 V PNP BISS loadswitch Rev. 03 — 13 February 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in one package.


    Original     		PDF PBLS4003Y; PBLS4003V PBLS4003Y OT363 SC-88 OT666 PBLS4003Y PBLS4003V