POLICE RADAR DETECTOR Search Results

gunn diode radar

Abstract: police radar detector radar gunn diode motion DOPPLER stereo doppler radar police radar detector detector GUNN OSCILLATORS police radar police radar detector receiver Gunn Diode
Contextual Info: M /A-COM 's Commercial Sources Group manufactures a wide range of Gunn Diode based Oscillators, Motion Detection Modules, Voltage Controlled Oscillators and Telecommunication Transmitters and Receivers for short haul terrestrial radio links in Ku and K bands.

hyperabrupt tuned oscillator

Abstract: missile seeker 4ST520 45331 police radar detector detector 45231 4648-1
Contextual Info: M/A-COM TABLE 1 SEMICONDUCTOR PRODUCTS OPERATION • Burlington, MA 01803 • 617 272-3000 Silicon Abrupt Silicon Hyperabrupt G a AS Abrupt G a AS Hyperabrupt Good Fair Best Good Fair Good Fair Best Fair Good Good Best VCO's for Tuned Synthesizers (A) Instruments & Telecommunication

Avantek mixer sx

Abstract: RF LNA 10 GHz Ground Radar diagram AVANTEK sx s band doppler mixer avantek police radar detector police radar detector detector radar block diagram radar system with circuit diagram
Contextual Info: prelim inary d a ta sheet MSF-8870 Silicon Bipolar MMIC Frequency Converter July, 1986 QlAVANTEK O C \< ^ 005143 Avantek 70 Mil Package Features • Up or Down Frequency Conversion with up to 20 dB Conversion Gain • RF Input From 0.5 to 10 GHz • Low Phase Noise Self-Oscillating LO From 0.5 to

Contextual Info: prelim inary d a ta sheet 0AVAN TEK MSF-8870 Silicon Bipolar MMIC Frequency Converter July, 1986 O r\< ^ 005143 > p *0 ^ Avantek 70 Mil Package Features • Up or Down Frequency Conversion with up to 20 dB Conversion Gain • RF Input From 0.5 to 10 GHz • Low Phase Noise Self-Oscillating LO From 0.5 to

police radar detector

Abstract: DOPPLER 10.525 ghz radar detector detector FM TRANSMITTER CIRCUIT Gunn Diode at power supply circuit police radar detector receiver police radar detector detector gunn diode x band amplifier police radar detector local oscillator frequency varactor diode for x band radar radar detector receiver
Contextual Info: Glossary — Terms as used in this catalog ATTENUATOR — A PIN diode attenuator is a two terminal device capable of providing a prescribed RF attenuation based on the level of bias control applied. BARRIER HEIGHT — The barrier height of a Schottky junction determines the voltage current characteristics of that diode.

Avantek mixer

Abstract: police radar detector normal radar circuit police radar detector detector MSF-8885 s band doppler mixer catv up converter diagram radar circuit police radar detector receiver radar block diagram
Contextual Info: prelim inary d a ta sheet 0AVANTEK MSF-8885 Silicon Bipolar MMIC Frequency Converter July, 1986 o<?AOi 005141 c 3 V ^ r\ Avantek 85 Plastic Package Features RF O U TP U T AND BIAS • Up or Down Frequency Conversion with up to 20 dB Conversion Gain • RF Input From 0.5 to 10 GHz

Contextual Info: preliminary data sheet QlAVANTEK n'î .'N M SF-8885 Silicon Bipolar M M IC Frequency Converter July, 1986 o ,?ACji 005141 Avantek 85 Plastic Package Features RF O U TP U T AND BIAS Up or Down Frequency Conversion with up to 20 dB Conversion Gain RF Input From 0.5 to 10 GHz

Schottky diode Die flip chip

Abstract: police radar detector MADS-001317-1320AG
Contextual Info: GaAs Solder Bump Flip Chip Schottky Diode MADS-001317-1320AG V1 Features • Low Series Resistance, 4 Ω • Low Capacitance, 45 fF • High Cutoff Frequency • Silicon Nitride Passivation • Polyimide Scratch Protection • Solderable Bump Die Attach Mounting Side with Solder Bumps

MA4E2038

Abstract: handling of beam lead diodes police radar detector M541
Contextual Info: Millimeter Wave GaAs Beam Lead Schottky Barrier Diode MA4E2038 MA4E2038 Millimeter Wave GaAs Beam Lead Schottky Barrier Diode 1,2 Package Outlines Features • • • • • Low Series Resistance Low Capacitance High Cut off Frequency Silicon Nitride Passivation

Contextual Info: MA4E2037, MA4E2039, MA4E2040 M/A-COM GaAs Beam Lead Schottky Barrier Diodes RF & Micrawas/e Products Features Package Outlines • • • • • MA4E2037 Low Series Resistance Low Capacitance High Cut-Off Frequency Silicon Nitride Passivation M ultiple Configurations

Contextual Info: MADS-001317-1320AG GaAs Solder Bump Flip Chip Schottky Diode M/A-COM Products Rev. V2 Features • • • • • • Low Series Resistance, 4 Ω Low Capacitance, 45 fF High Cutoff Frequency Silicon Nitride Passivation Polyimide Scratch Protection Solderable Bump Die Attach

MO9072

Contextual Info: GUNN TRANSCEIVERS Voltage Controlled TM MO87127 – MO9140 Features ● Electronic Frequency Control ● High Doppler Sensitivity Levels ● Low AM and FM Noise Levels ● Direction-of-Motion Sensing ● Compact Size ● Pulsed Transceivers Available Applications

police radar detector

Abstract: Schottky diode Die flip chip Schottky diode Die MADS-001317-1320AG police radar
Contextual Info: MADS-001317-1320AG GaAs Solder Bump Flip Chip Schottky Diode M/A-COM Products Rev. V2 Features • • • • • • Low Series Resistance, 4 Ω Low Capacitance, 45 fF High Cutoff Frequency Silicon Nitride Passivation Polyimide Scratch Protection Solderable Bump Die Attach

dielectric resonator

Abstract: dielectric resonator filters for the application design dielectric resonator oscillator cavity resonator waveguide duplexer 10GHz OSCILLATOR dielectric resonator oscillator wireless cable tv ceramic coaxial resonators police radar detector
Contextual Info: TOKEN TE01δ Dielectric Resonators & Materials Dielectric Resonator Materials Microwave Dielectric Resonator Material Is The Cornerstone of Future Communications Technology TE01δ Mode Preview Microwave dielectric ceramics as the key basic materials to modern communication technology, after Token

Schottky diode Die flip chip

Abstract: police radar detector police radar detector detector MA4E1319-1 MA4E1319-2 0618 2375 MA4E1317 MA4E1318 "Schottky Barrier Diodes"
Contextual Info: MA4E1317, MA4E1318 MA4E1317 MA4E1319-2 MA4E1319-1, MA4E2160 V2 GaAs Flip Chip Schottky Barrier Diodes Features • Low Series Resistance • Low Capacitance • High Cutoff Frequency • Silicon Nitride Passivation • Polyimide Scratch Protection • Designed for Easy Circuit Insertion

MA4E1317

Contextual Info: an A M P com pany GaAs Flip Chip Schottky Barrier Diodes MA4E1317, MA4E1318 MA4E1319-1, MA4E1319-2 V2.00 MA4E131712 Case Style 1198 Features • • • • • • Low Series Resistance Low Capacitance High Cutoff Frequency Silicon Nitride Passivation Polyimide Scratch Protection

Schottky diode Die flip chip

Abstract: 0045E
Contextual Info: M an A M P com pany GaAs Flip Chip Schottky Barrier Diodes MA4E1317, MA4E1318 MA4E1319-1, MA4E1319-2 V2.00 Features • MA4E131712 Case Style 1198 Low Series Resistance • Low Capacitance • High Cutoff Frequency • Silicon Nitride Passivation • Polyimide Scratch Protection

police radar detector

Abstract: MA4E1317 police radar detector detector MA4E1318 MA4E1319-1 MA4E1319-2 Schottky diode Die flip chip
Contextual Info: GaAs Flip Chip Schottky Barrier Diodes MA4E1317, MA4E1318 MA4E1319-1, MA4E1319-2 V2.00 Features ● ● ● ● ● ● MA4E13171, 2 Case Style 1198 Low Series Resistance Low Capacitance High Cutoff Frequency Silicon Nitride Passivation Polyimide Scratch Protection

MA4E2037

Abstract: MA4E2039 M541 MA4E2040
Contextual Info: MA4E2037, MA4E2039,MA4E2040 GaAs Beam Lead Schottky Diodes Features • • • • • Low Series Resistance Low Capacitance High Cut-Off Frequency Silicon Nitride Passivation Multiple Configurations Rev. V2 MA4E2037 Description and Applications M/A-Com’s MA4E2037 single, MA4E2039 anti-parallel

Contextual Info: MADS-001317-1500 Solderable GaAs Flip Chip Schottky Diode Rev. V2 Features • • • • • • • • • • Usable Past 80GHz Low Series Resistance Low Capacitance High Cutoff Frequency Silicon Nitride Passivation Polyimide Scratch Protection Lead Free RoHS Compliant

Contextual Info: MADS-001317-1500 Solderable GaAs Flip Chip Schottky Diode Rev. V3 Features • • • • • • • • • • Usable Past 80GHz Low Series Resistance Low Capacitance High Cutoff Frequency Silicon Nitride Passivation Polyimide Scratch Protection Lead Free RoHS Compliant

MADS-001317-1500

Abstract: Schottky diode Die flip chip MADS-001317-1500AG SN63 PB37 PROFILES MADS-001317-1500AP MADS-001317
Contextual Info: MADS-001317-1500 Solderable GaAs Flip Chip Schottky Diode Rev. V1 Features • • • • • • • • • Low Series Resistance Low Capacitance High Cutoff Frequency Silicon Nitride Passivation Polyimide Scratch Protection Lead Free RoHS Compliant Designed for Easy Circuit Insertion

MA4E2037

Abstract: MA4E2038 MA4E2039 M541 MA4E2040 millimeter wave radar
Contextual Info: MA4E2037, MA4E2038, MA4E2039, MA4E2040 GaAs Beam Lead Schottky Diodes Features • • • • • Low Series Resistance Low Capacitance High Cut-Off Frequency Silicon Nitride Passivation Multiple Configurations Rev. V3 MA4E2037, MA4E2038 Description and Applications

MA4E1317

Abstract: ma4e1319-2 MA4E1319-1
Contextual Info: GaAs Flip Chip Schottky Barrier Diodes Features • • • • • • Low Series Resistance Low Capacitance High Cutoff Frequency Silicon Nitride Passivation Polyimide Scratch Protection Designed for Easy Circuit Insertion MA4E1317, MA4E1318, MA4E1319-1, MA4E1319-2 V1