POLY DIELECTRIC CAPACITOR Search Results

LCOS

Abstract: 1P3M 0.35um 1P3M logic 3.3V 0.35um 2p4m cmos 0.35Um 2P4M 400-700nm 1P2M poly dielectric capacitor WFS-FS-20882-10
Contextual Info: LCOS Backplane Process ▲ Features • 0.65µm/0.5µm/0.35µm FEOL - Supply Voltage: 3.3V/5.0V - Option: High voltage 13V/25V Diffusion Resistor Bulk-Poly capacitor • 0.35µm BEOL - CMP planarization for dielectric layers - Perfect planarization between Pixels

arcotronics capacitors mkp

Contextual Info: CAPACITORS FOR CLAMPING APPLICATIONS METALLIZED POLYPROPYLENE MKP C 4DR Series The Capacitors od C4D Series are designed with reinforced metallized poly­ propylene dielectric film. These Capacitors are suitable to withstand the hea­ vy current pulses usually met in clamping circuits showing very low values

x2 capacitor

Abstract: capacitor 0.15 j 100 MKT capacitor 0.33uf x2 gb T14472 capacitor 0.22 k 100 MKT capacitor 0.47 j 100 MKT X2-MKP IEC 60384-14 mkt T14472 capacitor 0.22 uF MKP X2
Contextual Info: Metallized Poly Film X2 Capacitor CLASS I TOPMAY X2 MKP metallized polypropylene film capacitor, class X2 – TMF003 X2-MKP are non-inductively wound with metallized polypropylene film as the dielectric/electrode with copper-clad steel leads and encapsulated in a plastic case sealed with epoxy resin.

0.18 um CMOS parameters

Abstract: poly silicon resistor pepi c 0.18 um CMOS technology World transistors
Contextual Info: 1.0 µm CMOS Process XC10 1.0 µm Mixed Signal CMOS Technology Schematic cross section NMOS Poly-Poly-CAP Broad variety of combinable process elements available: PMOS - Double poly capacitor Source Drain Source Drain Gate n+ - High ohmic and low TC resistors

Capacitor Dielectric Comparison

Abstract: MLCC capacitor 100nf 100v polyester surge MLCC 50V 100uf MLCC 10nF 100nF ESL X7R NPO esr dielectric absorption Styrene capacitor 10100G
Contextual Info: Technical Note 3 Capacitor Dielectric Comparison MLCC Characteristic Capacitance DF I.R. Voltage VDC Temperature Range T.C (∆C) Dielectric Absorption Max Frequency (MHz) Frequency response Features/ Application Remarks Ceramic Disc Aluminum Electrolytics

CMOS Process Family

Abstract: 0.6 um cmos process BSIM3 resistor bsim3 bsim3 model metal oxide in capacitor xfab X-Fab
Contextual Info: 0.8 µm CMOS Process Family CX08 State-of-the-art 5V 0.8µm CMOS Technology Main Process Flow with additional options: P substrate Analog elements: linear capacitor, high ohmic resistor High voltage module: different n- and p-type, MOSFETs up to 50V, N substrate on demand

transistor poly3

Abstract: RR510 RR-504 RR-520 X28C256 rr520
Contextual Info: Xicor Endurance Report Xicor Endurance Report RR-520 H. A.R. Wegener INTRODUCTION This report describes endurance relating to Xicor’sproducts employing the Direct WriteTM cell. These devices display enhanced endurance cycling characteristics that are attributable to the direct write cell, process

SC-15

Abstract: EEPROM flotox Japanese Transistor Cross References
Contextual Info: u these components. In this paper, we will focus on the technology factors by comparing the three dom ­ inant E2 technologies to date, and giving our own viewpoint on the development in the market place. COMPARISON AND TRENDS IN TO DAY’S DOM INANT E2 TECHNOLOGIES

SCR SN 101

Abstract: AY 5 3500 AY 6 smd SCR SN 102 SN 101 SCR
Contextual Info: A H S e r ie s: P 9 0 P or ce lain C ap acitor s D e scr ip tion F u n ction al A p p lication s B e n e fi ts Porcelain Capacitors Positiv e TC “ P90” L ow ESR, High Q Capacitance Range 0.1 - 5100 pF High Self- resonance L ow Noise Established Reliability

ccd diode datasheet

Abstract: and gate cmos Poly
Contextual Info: Submicron Fab: 71 Vista Montana • San Jose, CA 95134 TEL: 408 222-8888 • FAX: (408) 222-2707 Wafer Foundry Services CMOS CCD Processes 1.2µm CMOS CCD Process ❖ ❖ ❖ ❖ ❖ ❖ ❖ ❖ Integration of CCD elements into a 1.2 N-well process 2 poly, 2 metal

2P4M

Abstract: cmos transistor 0.35 um transistor 2p4m 0.35Um 2P4M of 2p4m
Contextual Info: 0.35um 2P4M High Voltage 18V / 18V updated in 2005.03.24 Features ƒ Voltage Logic,High Voltage ƒ Starting material 3.3V,18V/18V P-type (100), Non-Epi ƒ Well Structure Logic : Retrograded Twin well (Nwell, Pwell) HV : Diffused Twin well (HNwell, HPwell)

transistor equivalent table

Abstract: SD2300
Contextual Info: NEW ULTRA-HIGH DEN SITY TEX TU R ED POLY-Si FLOATING G A TE E 2PROM C E L L By D. Guterman, B. Houck, L. Starnes and B. Yeh This paper describes a new, highly scaled cell structure, the smallest full function E2PROM cell re­ ported to date. It utilizes the textured triple-poly-si

varactor flip chip

Abstract: CMOS Stacked RF INtermétal
Contextual Info: ▼ The Fujitsu Analog and RF CMOS Technology Description Building on Fujitsu’s expertise in leading-edge CMOS processes and analog design capabilities, the company’s RF CMOS technologies are optimized for wireless networks, cellular communication, WiMAX, digital multi-media

all transistor

Abstract: 2P4M transistor 2p4m nmos transistor 0.35 um 73aa cmos transistor 0.35 um of 2p4m
Contextual Info: 0.30um 2P4M High Voltage 13.5V /13.5V updated in 2005.04.05 Features ƒ Vdd Logic, High Voltage 3.3V, 13.5V/ 13.5V ƒ Substrate P-type (100), Non-Epi ƒ Well Logic : Retrograded Twin Well (Nwell, Pwell) HV : Diffused Twin Well (Hnwell, Hpwell) ƒ Isolation

CMOS Process Family

Abstract: 0.6 um cmos process 500-nm CMOS standard cell library CX06
Contextual Info: 0.6 µm CMOS Process Family CX06 State-of-the-art 5V 0.6µm CMOS Technology Single-layer poly with double and triple layer metal option Double-layer poly with double and triple layer metal option Digital standard cell library Analog elements Memory generators RAM, DPRAM, ROM compiler

NMOS transistor 0.18 um CMOS

Abstract: 1P3M LOCOS
Contextual Info: 0.6um 1P3M High Voltage 16V / 16V updated in 2005.03.29 Features ƒ Voltage Logic,High Voltage 5V/5V,16V/16V ƒ Starting material P-type (100), 9~12 Ω-cm ƒ Well Structure CMOS Triple-well (Nwell,HNWell, Pwell) ƒ Isolation Conventional LOCOS, Bird's Beak = 0.18 um/side

INTERMETal diode

Abstract: zener diode BN NMOS transistor 0.18 um CMOS BPSG
Contextual Info: 0.6um 1P3M High Voltage 12V / 12V updated in 2005.03.29 Features ƒ Voltage Logic,High Voltage 5V/5V,12V/12V ƒ Starting material P-type (100), 9~12 Ω-cm ƒ Well Structure CMOS Triple-well (Nwell,HNWell, Pwell) ƒ Isolation Conventional LOCOS, Bird's Beak = 0.18 um/side

Sprague 40 capacitor

Contextual Info: QUICK GUIDE TO FILM CAPACITORS OSPRAGUE GUIDE TO METALIZED-FILM CAPACITORS PAPER/ POLYESTER Sprague milm Metal-Cased Tubular Type Cap. Range Temp. Range Volt. Range POLYCARBONATE Sprague Metfilm®K 218P .001-12>*F - 5 5 to + 125°C 100to400VDC POLYPROPYLENE

bsim3v3

Abstract: C035ANV IMD2 transistor pmos Vt poly dielectric capacitor
Contextual Info: ANV Process ID: SM/SN [C035ANV] Applications Main Process Flow Situations where single-cell operation or • P Substrate extended battery life are key, e.g: • High Voltage Wells optional

AL 2001

Abstract: AL-2001 graphite foil capacitor electrolyte datasheet F2118 mno2 Al2001 T557
Contextual Info: Performance Improvements with Polymer Ta and Al 2001 APEC by John Prymak Applications Manager P.O. Box 5928 Greenville, SC 29606 Phone (864) 963-6300 Fax (864) 963-66521 www.kemet.com F2118 12/04 1 of 9 Improvements with Polymer Cathodes in Aluminum and Tantalum Capacitors

Contextual Info: Syfer - Multilayer Ceramic Capacitors and EMI Filters Monday 19th January 2009 Go Input Part Number ABOUT SYFER High Voltage SM Capacitors AGENTS & DISTRIBUTORS NEWS SPOTLIGHT CONTACT US Choose your Language: English Please login Home Multilayer Ceramic Capacitors

Contextual Info: Syfer - Multilayer Ceramic Capacitors and EMI Filters Monday 19th January 2009 Go Input Part Number ABOUT SYFER High Voltage SM Capacitors AGENTS & DISTRIBUTORS NEWS SPOTLIGHT CONTACT US Choose your Language: English Please login Home Multilayer Ceramic Capacitors

Contextual Info: Syfer - Multilayer Ceramic Capacitors and EMI Filters Monday 19th January 2009 Go Input Part Number ABOUT SYFER High Voltage SM Capacitors AGENTS & DISTRIBUTORS NEWS SPOTLIGHT CONTACT US Choose your Language: English Please login Home Multilayer Ceramic Capacitors

Contextual Info: Syfer - Multilayer Ceramic Capacitors and EMI Filters Monday 19th January 2009 Go Input Part Number ABOUT SYFER High Voltage SM Capacitors AGENTS & DISTRIBUTORS NEWS SPOTLIGHT CONTACT US Choose your Language: English Please login Home Multilayer Ceramic Capacitors