POWER 470-860MHZ W Search Results

shery

Contextual Info: UTV0408-45 45W Psync, 470-860MHz, 32V Broadband RF Power N Channel Enhancement-Mode Lateral MOSFET The UTV0408-45 is designed for high power UHF TV transmitter applications and is capable of producing 14dB gain and 45 watt peak sync output power over an instantaneous bandwidth

SUTV040

Abstract: M122 SD4011
Contextual Info: SD4011 RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS . . . . GOLD METALLIZATION INTERNAL INPUT MATCHING COMMON EMITTER OVERLAY GEOMETRY CLASS A OPERATION METAL/CERAMIC PACKAGE POUT = 4 W MIN. WITH 8 dB GAIN .280 4L STUD M122 epoxy sealed ORDER CODE

SUTV040

Abstract: airtronic M122 SD4011
Contextual Info: SD4011 RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS . . . . GOLD METALLIZATION INTERNAL INPUT MATCHING COMMON EMITTER OVERLAY GEOMETRY CLASS A OPERATION METAL/CERAMIC PACKAGE P OUT = 4 W MIN. WITH 8 dB GAIN .280 4L STUD M122 epoxy sealed ORDER CODE

Contextual Info: SD4011 RF POWER BIPOLAR TRANSISTORS UHF TV/LINEAR APPLICATIONS FEATURES SUMMARY • GOLD METALLIZATION Figure 1. Package ■ INTERNAL INPUT MATCHING ■ COMMON EMITTER ■ OVERLAY GEOMETRY ■ CLASS A OPERATION ■ METAL/CERAMIC PACKAGE ■ POUT = 4 W MIN. WITH 8 dB GAIN

TDA2579

Abstract: ic tda2595 TDA8432 TDA2595 860mhz rf amplifier circuit diagram monitor horizontal ic voltage video mixer circuit diagram video amplifier circuits for cctv 50MHz-300MHz cctv circuit diagram
Contextual Info: Signelics TDA8432 Computer-Controlled Deflection Processor for Video Displays Objective Specification Linear Products DESCRIPTION FEATURES The TDA8432 is an l2C bus-controlled deflection processor analog picture ge­ ometry processor which contains the control and drive functions of the deflec­

M122

Abstract: SD4011
Contextual Info: SD4011 RF POWER BIPOLAR TRANSISTORS UHF TV/LINEAR APPLICATIONS FEATURES SUMMARY • GOLD METALLIZATION Figure 1. Package ■ INTERNAL INPUT MATCHING ■ COMMON EMITTER ■ OVERLAY GEOMETRY ■ CLASS A OPERATION ■ METAL/CERAMIC PACKAGE ■ POUT = 4 W MIN. WITH 8 dB GAIN

860mhz rf amplifier circuit diagram

Abstract: UMTS gsm RFMD PA LTE
Contextual Info: RFPA2089 RFPA2089 InGaP HBT Power Amplifier 0.25W, 50MHz to 2700MHz InGaP HBT POWER AMPLIFIER 0.25W, 50MHz to 2700MHz Package: SOT-89 GND 4 Features „ -60dBc ACPR at 13dBm WCDMA „ 0.25W Output Power P1dB „ Excellent Linearity to DC Power Ratio „ High Gain: 17.5dB at 2.65GHz

air variable capacitor

Abstract: carbon variable resistor variable capacitor 100 ohm Variable Resistor 1/4W capacitor ceramic variable RF capacitor variable Z1 SURFACE MOUNT 200B 700B SD56120
Contextual Info: SD56120 RF POWER TRANSISTORS The LdmoST FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION, PUSH-PULL • POUT = 100 W WITH 14 dB GAIN @ 860 MHz M246 epoxy sealed • BeO FREE PACKAGE

CXE2022SR

Abstract: CXE2022PCK-410 CXE2022SB CXE2022SQ CXE2022TR7 CXE2022Z CXE-2022Z amplifier DFN 2x2 MARKING RFMD CXE2022
Contextual Info: CXE-2022Z CXE-2022Z 50MHz to 1000MHz MMIC 75Ω Low Noise Amplifier 50MHz to 1000MHz MMIC 75Ω LOW NOISE AMPLIFIER Package: 2x2 DFN Product Description Features RFMD’s CXE-2022Z is a 75Ω high performance low noise pHEMT MMIC amplifier utilizing a self bias network. The CXE-2022Z is designed to run over a wide 2.7V to 3.3V single supply voltage

CXE-2022

Abstract: MARKING RFMD CXE-2022Z InP transistor HEMT optimum recievers 106-172 106172
Contextual Info: CXE-2022Z CXE-2022Z 50MHz to 1000MHz MMIC 75Ω Low Noise Amplifier 50MHz to 1000MHz MMIC 75Ω LOW NOISE AMPLIFIER Package: 2x2 DFN Product Description Features RFMD’s CXE-2022Z is a 75Ω high performance low noise pHEMT MMIC amplifier utilizing a self bias network. The CXE-2022Z is designed to run over a wide 2.7V to 3.3V single supply voltage

LLHB5402-0665-G

Abstract: hybrid coupler 3dB 90 hybrid coupler 3dB HYBRID SEMICONDUCTORS LLHB02
Contextual Info: SMT Hybrid Coupler 3dB 90°. The content of this specification may change without notification 09/18/08 LLHB5402-0665-G 665MHz:470~860MHz Configuration, Dimensions Schematics Out1 Out2 5.0 LLHB02 2.0 LLHB02 50 Ω Dummy Unit : mm Input Out2 Port (0 deg.)

balun 50 ohm

Abstract: 200B 700B JESD97 SD56120 TSD56120
Contextual Info: SD56120 RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration Push-pull ■ POUT = 100W with 14dB gain @ 860MHz ■ BeO free package Description

THU35

Abstract: THU50 power 470-860mhz w THU100LI RF GAIN LTD Class A AMPLIFIER 4W 470-860MHz
Contextual Info: THU100LI 100 W Class A UHF Amplifier PDC-US/02 360mm 14.17" CPPO1 8X IN PDC-US/01 ∑ + IN 114/34 OUT 3 x THU50 114/34 PDC-U3/02 + > 100 W THU35 OUT IN 35W 114/34 4W + 35W ≤ 1.5 W ∑ OUT 4W IN 35W 114/34 4W + 470 - 860 MHz CPPO1 8X 470 - 860 MHz 26 Volts

THU50

Abstract: 470-860mhz Power amplifier w power 470-860mhz w 45W UHF linear amplifier 470-860 470-860mhz Power amplifier
Contextual Info: THU50 50W Class A UHF Amplifier Designed for TV transposers and transmitters, this amplifier incorporates microstrip technology and discrete linear push-pull transistors whith gold metallization and diffused emitter ballast resistors to enhance ruggedness and reliability.

THU35

Abstract: uhf linear amplifier module 470-860MHz
Contextual Info: THU35 35W Class A UHF Amplifier Designed for TV transposers and transmitters, this amplifier incorporates microstrip technology and discrete linear push-pull transistors with gold metallization and diffused emitter ballast resistors to enhance ruggedness and reliability.

THU100C

Abstract: 40W267 470-860mhz Power amplifier w 470-860mhz Power amplifier AMPLIFIER 2 MHZ 100W transposers
Contextual Info: THU100C 100W Class A UHF Amplifier Designed for TV transposers and transmitters, this amplifier incorporates microstrip technology and discrete linear push-pull transistors with gold metallization and diffused emitter ballast resistors to enhance ruggedness and reliability.

GaAs MESFET

Abstract: NES2527B-30 MESFET NE6500278 NEL2000 NES1821B-50 NEZ1011 NEZ1414 NEZ5964
Contextual Info: Power NEW! NES2527B-30 GaAs MESFET • 30 Watts POUT, 13.0 dB Gain • 2.1–2.7GHz Wideband Operation PCS and Cellular Base Station NEW! NES1821B-50 GaAs MESFET Wireless Local Loop and Wireless Cable MMDS • 47.0 dBm POUT @ 1.9GHz • 11.0 dB Linear Gain

C-100-A1

Contextual Info: f Z 7 SGS-THOMSON SD4011 RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS • . ■ . ■ . ■ GOLD METALLIZATION INTERNAL INPUT MATCHING COMMON EMITTER OVERLAY GEOMETRY CLASS A OPERATION METAL/CERAMIC PACKAGE P out = 4 W MIN. WITH 8 dB GAIN PIN CONNECTION

MS1512

Contextual Info: MS1512 RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS Features • • • • • • 860 MHz 20 VOLTS CLASS A LINEAR OPERATION POUT = 1.0 WATT GP = 10.0 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1512 is a silicon NPN bipolar transistor designed for

Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1512 RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS Features • • • • • • 860 MHz 20 VOLTS CLASS A LINEAR OPERATION POUT = 1.0 WATT GP = 10.0 dB MINIMUM

Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1512 RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS Features • • • • • • 860 MHz 20 VOLTS CLASS A LINEAR OPERATION POUT = 1.0 WATT GP = 10.0 dB MINIMUM

Contextual Info: CXE-2022Z CXE-2022Z 50MHz to 1000MHz MMIC 75 Low Noise Amplifier 50MHz to 1000MHz MMIC 75 LOW NOISE AMPLIFIER Package: 2x2 DFN Product Description Features RFMD’s CXE-2022Z is a 75 high performance low noise pHEMT MMIC amplifier utilizing a self

MARKING RFMD

Abstract: CXE2022Z CXE2022SR CXE-2022Z inp hemt low noise amplifier CXE-2022 CXE2022PCK-410 CXE2022SB CXE2022SQ CXE2022TR7
Contextual Info: CXE-2022Z CXE-2022Z 50MHz to 1000MHz MMIC 75 Low Noise Amplifier 50MHz to 1000MHz MMIC 75 LOW NOISE AMPLIFIER Package: 2x2 DFN Product Description Features RFMD’s CXE-2022Z is a 75 high performance low noise pHEMT MMIC amplifier utilizing a self

Contextual Info: SMT Hybrid Coupler 3dB 90°. LLHB5402-0665-G 665MHz:470~860MHz Configuration, Dimensions Schematics Out1 Out2 LLHB02 2.0 4.0 5.0 LLHB02 50 Ω Dummy Unit : mm Input Out2 Port (0 deg.) GND Out1 Port (−90 deg.) Termination GND Input Port Specification Style No.