POWER AMPLIFER CIRCUIT Search Results

TDA8844

Abstract: ic TDA8842 TDA8842 OF IC 78xx regulator Samsung TV tuners module LMC556 LM317 toshiba uA4558 uhf linear amplifier module 5w KA7500
Contextual Info: Function Pins Package IK Semi OP AMP Dual Operational Amplifer Dual Operational Amplifer Dual Operational Amplifer 8 8 8 DIP/SOP/SIP DIP/SOP/SIP DIP/SOP IL358 IL4558 IL4560 Dual Operational Amplifer Quad Operational Amplifer Low Power J-FET Dual Operational Amplifer

1000w power AMPLIFIER pcb circuit

Abstract: 2000w power amplifier 2000w audio power amplifier audio amplifier 1000w class d 1000w amplifier 600W TRANSISTOR AUDIO AMPLIFIER 1000w power amplifier power amplifier for sonar 150W TRANSISTOR AUDIO AMPLIFIER 300W TRANSISTOR AUDIO AMPLIFIER
Contextual Info: CLASS D AUDIO AMPLIFER MODULE SDV1005-600: 600W RMS, CLASS D, AUDIO AMPLIFER MASTER MODULE FEATURES • • • • • • • • • • • • • • • • HIGH POWER: 600W RMS1 HIGH EFFICIENCY ~90% LOW DISTORTION: <0.3% THD OPEN LOOP SIMPLE POWER SUPPLY REQUIREMENT2

1000w power AMPLIFIER pcb circuit

Abstract: 800w power amplifier stereo 300W TRANSISTOR AUDIO AMPLIFIER 150W TRANSISTOR AUDIO AMPLIFIER ECM-300H 1000W Stereo Audio Power Amplifier SDV1015-600 1000W TRANSISTOR AUDIO AMPLIFIER 300w amplifier 300w stereo amplifier
Contextual Info: CLASS D AUDIO AMPLIFER MODULE ECM-300H 300W RMS CLASS D AUDIO AMPLIFER MODULE FEATURES • • • • • • • • • • • • • • • • • HIGH POWER: 300W RMS1 HIGH EFFICIENCY >90% HIGH SWITCHING FREQUENCY: 450KHz. LOW DISTORTION: <0.3% THD OPEN LOOP

1000w power AMPLIFIER pcb circuit

Abstract: 1000W TRANSISTOR AUDIO AMPLIFIER 2000W Stereo Audio Power Amplifier 600W TRANSISTOR AUDIO AMPLIFIER 2000w audio power amplifier 1000W TRANSISTOR POWER AMPLIFIER 2000w audio amplifier 2000w CLASS D AMPLIFIER 300W TRANSISTOR AUDIO AMPLIFIER 2000w power amplifier
Contextual Info: CLASS D AUDIO AMPLIFER MODULE ECM-600H 600W RMS CLASS D AUDIO AMPLIFER MODULE FEATURES • • • • • • • • • • • • • • • • • HIGH POWER: 600W RMS1 HIGH EFFICIENCY ~90% HIGH SWITCHING FREQUENCY: 450KHz. LOW DISTORTION: <0.3% THD OPEN LOOP

2SA1046

Abstract: 2N6275 equivalent BU108 TR TIP2955 MOTOROLA 2N6277 BU806 Complement BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High-Power NPN Silicon Transistors . . . designed for use in industrial–military power amplifer and switching circuit applications. • High Collector Emitter Sustaining — VCEO sus = 100 Vdc (Min) — 2N6274 VCEO(sus) = 120 Vdc (Min) — 2N6275

2N6277

Abstract: 2N6274 2N6275 2N6277 applications transistor 2N6274 1N3879 2N6377 MOTOROLA 2N6277
Contextual Info: MOTOROLA Order this document by 2N6274/D SEMICONDUCTOR TECHNICAL DATA High-Power NPN Silicon Transistors . . . designed for use in industrial–military power amplifer and switching circuit applications. • High Collector Emitter Sustaining — VCEO sus = 100 Vdc (Min) — 2N6274

2n6277

Abstract: 2N6274 2N6275 MOTOROLA 2N6277 transistor 2N6274
Contextual Info: MOTOROLA Order this document by 2N6274/D SEMICONDUCTOR TECHNICAL DATA 2N6274 2N6275 2N6277* High-Power NPN Silicon Transistors . . . designed for use in industrial—military power amplifer and switching circuit applications. • • • • • High Collector Emitter Sustaining —

HN4C08J

Contextual Info: HN4C08J TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN4C08J Unit: mm Low Frequency Power Amplifer Applications Power Switching Application High DC Current Gain : hFE = 100~320 Low Saturation Voltage : VCE(sat)=0.4V (Max.) : (IC = 500mA , IB = 20mA)

HN4A08J

Contextual Info: HN4A08J TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN4A08J Unit: mm Low Frequency Power Amplifer Applications Power Switching Application High DC Current Gain : hFE = 100~320 Low Saturation Voltage : VCE(sat)= −0.4V (Max.) : (IC = −500mA , IB = −20mA)

Contextual Info: HN4C08J TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN4C08J Unit: mm Low Frequency Power Amplifer Applications Power Switching Application z High DC Current Gain : hFE = 100~320 z Low Saturation Voltage : VCE(sat)=0.4V (Max.) : (IC = 500mA , IB = 20mA)

MJE371

Abstract: MJE-371 MJE521
Contextual Info: SavantIC Semiconductor Product Specification MJE371 Silicon PNP Power Transistors DESCRIPTION •With TO-126 package ·Complement to type MJE521 APPLICATIONS ·For use in general-purpose amplifer and switching circuits, ·Recommended for use in 5 to 20 W audio amplifiers utilizing complementary

HN4C08J

Contextual Info: HN4C08J TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN4C08J Unit: mm Low Frequency Power Amplifer Applications Power Switching Application z High DC Current Gain : hFE = 100~320 z Low Saturation Voltage : VCE(sat)=0.4V (Max.) : (IC = 500mA , IB = 20mA)

HN4A08J

Abstract: pnp amplifer
Contextual Info: HN4A08J TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN4A08J Low Frequency Power Amplifer Applications Power Switching Application z z Unit: mm High DC Current Gain : hFE = 100~320 Low Saturation Voltage : VCE(sat)= −0.4V (Max.) : (IC = −500mA , IB = −20mA)

electrolytic capacitor 2200 uf

Contextual Info: PTMA180402EL PTMA180402FL Wideband RF LDMOS Integrated Power Amplifer 40 W, 1800 – 2000 MHz Description The PTMA180402EL and PTMA180402FL are matched, wideband 40-watt LDMOS integrated circuits intended for base station applications. They can be used for all typical modulation formats

GRM422Y5V106Z050AL

Abstract: PTMA180402EL PTMA180402FL RO4350 H-33265-8
Contextual Info: PTMA180402EL PTMA180402FL Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifer 40 W, 1800 – 2000 MHz Description The PTMA180402EL and PTMA180402FL are matched, wideband 40-watt, 2-stage, LDMOS integrated amplifiers intended for use in

Contextual Info: HN4A08J TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN4A08J Low Frequency Power Amplifer Applications Power Switching Application z z Unit: mm High DC Current Gain : hFE = 100~320 Low Saturation Voltage : VCE(sat)= −0.4V (Max.) : (IC = −500mA , IB = −20mA)

CAPACITOR 2.2UF THROUGH HOLE

Abstract: d-class amplifier gaas Low Noise Amplifier power amplifier circuit diagram with pcb layout surface mounted fuse, moisture sensitivity level ACPM-7881 ACPM-7881-BLK ACPM-7881-TR1 J-STD-033 coal
Contextual Info: ACPM - 7881 W-CDMA Power Amplifer Data Sheet Description Features The ACPM-7881 is a high performance W-CDMA power amplifier module offered in a 4x4x1.1mm package. Designed around Avago Technologies’ GaAs Enhancement Mode pHEMT process, the ACPM-7881 offers premium

PTMA180402M

Abstract: PTMA180402M V1 marking
Contextual Info: PTMA180402M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifer 40 W, 1800 – 2000 MHz Description The PTMA180402M is a matched, wideband 2-stage, 40-watt LDMOS integrated amplifier intended for base station applications

2294a

Contextual Info: PACIFIC DATA SHEET MONOLITHICS n_n_o_o_R _n PM2102A 0 1m m 900 MHz Low Voltage, High Efficiency GaAs MMIC Power Amplifer Features: Applications: • • • • • • • • 3.0 Volt Supply +28 dBm Output Power 50% Efficiency 16 Pin SOIC Package Commercial Products

a 70084 transistor

Abstract: 0.9112 data sheet IC 7408 IC 7408 DATASHEET a 70084 nec 8705 NE461M02 NE46M02
Contextual Info: California Eastern Laboratories TECHNICAL NOTE1 TN1031 Medium Power Wideband Amplifer for MMDS Application Introduction Designers of high-volume commercial microwave subsystems share common goals: high performance, low cost and ease of manufacturability. This technical note describes the process

XE1205

Abstract: capacitor npo NESG250134 1N4148 0603 exs00a HMC595 capacitor 1nF 0402 0915LP15B026 AN12050 RF TRANSISTOR 10GHZ
Contextual Info: AN1205.04 ADVANCED COMMUNICATIONS & SENSING FINAL Application Note AN1205.04 250mW Power Amplifer Platform with the XE1205 GENERAL DESCRIPTION KEY PRODUCT FEATURES The XE1205 is an integrated transceiver operating in the 433, 868 and 915 MHz license-free ISM Industrial,

Class D RF amplifer

Abstract: PTMA080302M
Contextual Info: Preliminary PTMA080302M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifer 30 W, 700 – 1000 MHz Description The PTMA080302M is a wideband, matched, 30-watt, 2-stage LDMOS integrated amplifier intended for use in all typical modulation

2n6277

Abstract: ts 3110 TRANSISTOR itt500 2N6274 transistor 6277 08/bup 3110 transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA H ig h -P o w e r NPN S ilicon T ran sisto rs 2N 6274 2N 6275 2N 6277* . . . designed for use In Industrial-military power amplifer and switching circuit applications. *Motorola Prtf*rr»d 0*v1c* • High Collector Emitter Sustaining —

Contextual Info: Preliminary SGL-0622Z Pb RoHS Compliant & Green Package Product Description The SGL-0622 is a low power, high gain, fully matched LNA designed for 0.1 - 4GHz operation. This LNA is designed for low power, 2.7 to 3.6V battery operation. This amplifer is fully matched and requires only 4-5