POWER AMPLIFIER 4 GHZ Search Results

soqpsk

Abstract: ku-band 15 watt SSPA RF power amplifier MHz
Contextual Info: Solid State Power Amplifier High Power, Broadband, Ku Band Solid State RF Amplifier Aethercomm Part Number SSPA 14.4-15.5-4 is a high • Operation from 14.4 to 15.5 GHz power, Ku Band solid state power amplifier that operates • 4 Watts Output Power Min

high power microwave transmitter

Abstract: microwave sensor 145mm power amplifier 12 GHZ High Power Microwave Device 90-GHz
Contextual Info: HBH 8.0 – 12.0 GHz High Power Amplifier Microwave GmbH HA6011/4 General Description The HA6011/4 is a high power amplifier modul for applications in Ku-Band. The high gain and high output power makes this device an ideal choice as a high power amplifier for

Contextual Info: Amplifier, Power, 1.6W 9.5-14.5 GHz MAAPGM0070-DIE Rev A Advance Datasheet Features ♦ 1.6 Watt Saturated Output Power Level ♦ Variable Drain Voltage 4-10V Operation ♦ MSAG Process Description The MAAPGM0070-DIE is a 4-stage 1.6 W power amplifier with

Contextual Info: Amplifier, Power, 1.6W 9.5-14.5 GHz MAAPGM0070-DIE 903279 — Advanced Datasheet Features ♦ 1.6 Watt Saturated Output Power Level ♦ Variable Drain Voltage 4-10V Operation ♦ MSAG Process Description The MAAPGM0070-DIE is a 4-stage 1.6 W power amplifier with

Contextual Info: Amplifier, Power, 1.3W 17.7-19.7 GHz MAAPGM0072-DIE Rev A Advance Datasheet Features ♦ 1.3 Watt Saturated Output Power Level ♦ Variable Drain Voltage 4-10V Operation ♦ MSAG Process Description The MAAPGM0072-DIE is a 4-stage 1.3 W power amplifier with

Contextual Info: Amplifier, Power, 1.6W 10.0-13.25 GHz MAAPGM0070-DIE Rev A Advance Datasheet Features ♦ 1.6 Watt Saturated Output Power Level ♦ Variable Drain Voltage 4-10V Operation ♦ MSAG Process Description The MAAPGM0070-DIE is a 4-stage 1.6 W power amplifier with

Contextual Info: HMC327MS8G / 327MS8GE v04.0607 6 GaAs InGaP HBT MMIC POWER AMPLIFIER, 3 - 4 GHz Typical Applications Features This amplifier is ideal for use as a power amplifier for 3.3 - 3.6 GHz applications: Gain: 21 dB • Wireless Local Loop 45% PAE Saturated Power: +30 dBm

AN3016

Abstract: MAAP-000072-PKG003 MAAP-000072-SMB003
Contextual Info: Amplifier, Power, 1 W 17.7-19.7 GHz MAAPGM0072-DIE Rev B Preliminary Datasheet Features ♦ 1 Watt Saturated Output Power Level ♦ Variable Drain Voltage 4-10V Operation ♦ MSAG Process Description The MAAPGM0072-DIE is a 4-stage 1 W power amplifier with on-chip

MAAP-000070-PKG003

Abstract: AN3016 MAAP-000070-MCH000 MAAP-000070-SMB003
Contextual Info: Amplifier, Power, 1.9W 10.0-13.25 GHz MAAPGM0070-DIE Rev B Preliminary Datasheet Features ♦ 1.9 Watt Saturated Output Power Level ♦ Variable Drain Voltage 4-10V Operation ♦ MSAG Process Description The MAAPGM0070-DIE is a 4-stage 1.9 W power amplifier with on-chip

MCR03EZHUJ000

Abstract: S1872 s1872a S1898 s1901
Contextual Info: PRELIMINARY DATA SHEET SKY65129-11: 1.98-2.02 GHz High Linearity 4 W Power Amplifier Applications Description • Satellite phones/SATCOM Skyworks SKY65129-11 is a Microwave Monolithic Integrated Circuit MMIC Power Amplifier (PA) with superior output power,

Contextual Info: 8 Watt Psat, 2 GHz to 4 GHz, High Power Amplifier, 39 dB Gain, 48 dBm IP3, SMA TECHNICAL DATA SHEET PE15A5038 The PE15A5038 is a 8 W high gain Class A/AB coaxial power amplifier operating in the 2 to 4 GHz frequency range. The amplifier offers 8 Watts typical of saturated power and 39 dB minimun small signal gain with ±1.5 dB maximum of gain

Contextual Info: 8 Watt Psat, 2 GHz to 4 GHz, High Power Amplifier, 39 dB Gain, 48 dBm IP3, SMA TECHNICAL DATA SHEET PE15A5038F The PE15A5038F is a 8 W high gain Class A/AB coaxial power amplifier operating in the 2 to 4 GHz frequency range. The amplifier offers 8 Watts typical of saturated power and 39 dB minimun small signal gain with ±1.5 dB maximum of gain

signal generator

Abstract: AWT6252 AWT6274 AWT6275 E4419B E9301H agilent HBT transistor series
Contextual Info: Application Note WCDMA IMT/PCS 4 mm x 4 mm Power Amplifier Modules Rev 0 RELEVANT PRODUCTS • • • • AWT6252 AWT6274 AWT6275 AWT6276 GENERAL DESCRIPTION The ANADIGICS 4 mm x 4 mm hetero-junction bipolar transistor HBT power amplifier modules designed

MAAP-000072-PKG003

Abstract: MAAP-000072-SMB003 MAAP-000072-SMB004 S2083
Contextual Info: RoHS Compliant MAAP-000072-PKG003 Amplifier, Power, 1.3W 17.7-19.7 GHz Rev A Preliminary Datasheet Features ♦ 1.3 Watt Saturated Output Power Level ♦ Variable Drain Voltage 4-10V Operation ♦ MSAG Process YYWW AP072G XXX MACOM Description The MAAP-000072-PKG003 is a 4-stage 1.3 W power amplifier

AWT6282

Abstract: E4419B E9301H agilent HBT transistor series
Contextual Info: Application Note UMTS 1700/IMT/PCS 4 mm x 4 mm Power Amplifier Modules Rev 1 Relevant products • AWT6278 • AWT6279 • AWT6282 General Description The ANADIGICS 4 mm x 4 mm hetero-junction bipolar transistor HBT power amplifier modules designed UMTS High Band, and operates from a single lithiumion (Li-ion) battery. The amplifier input and output

Contextual Info: PRELIMINARY DATA SHEET ECM060 4 X 4 mm WCDMA 3.5V POWER AMPLIFIER MODULE Description Features The ECM060 is a 10 pin 4 X 4 mm power amplifier module at 3.5V Vcc with high efficiency. This device was developed using EiC’s proprietary InGaP Gallium Arsenide

agilent HBT transistor series

Abstract: Amplifier Modules AWT6271 E4419B E9301H Low frequency power transistor and modules fsp Power supply 6624A R04033 E4419
Contextual Info: Application Note WCDMA Cellular 4 mm x 4 mm Power Amplifier Modules Rev 1 Relevant products • AWT6271 • AWT6272 General Description The ANADIGICS 4 mm x 4 mm hetero-junction bipolar transistor HBT power amplifier modules designed for WCDMA Cellular handsets have an operating

Contextual Info: PRELIMINARY DATA SHEET ECM070 4 X 4 mm WCDMA 3.5V POWER AMPLIFIER MODULE Description Features The ECM070 is a 10 pin 4 X 4 mm power amplifier module at 3.5V Vcc with high efficiency. This device was developed using EiC’s proprietary InGaP Gallium Arsenide

Contextual Info: XP1027-BD Power Amplifier 27 - 31 GHz Rev. V2 Features 2 5 4 3 V D3 VG3 VD2 V G2 VD1 Functional Diagram Ka-Band 4 W Power Amplifier Balanced Design, Good Input / Output Match 25 dB Small Signal Gain 35 dBm Saturated Output Power 43 dBm Output Third Order Intercept OIP3

Contextual Info: 34.0-37.0 GHz GaAs MMIC Power Amplifier P1072-BD March 2008 - Rev 08-Mar-09 Features Ka-Band 4 W Power Amplifier 22.0 Small Signal Gain 35.0 dBm Pulsed Saturated Output Power 25% Power Added Efficiency PAE % 100% On-Wafer RF, DC and Output Power Testing

Contextual Info: CMM-4 2.0 to 20.0 GHz GaAs MMIC Amplifier □ Flat Gain □ +16 dBm P.! dB □ Small Size: 39 x 74 mils □ Directly Cascadable □ Self-Biased □ Single Power Supply □ Guaranteed Performance Celeritek CMM-4 GaAs MMIC Amplifier The CMM-4 is a 2 to 20 GHz GaAs MMIC amplifier.

DM6030HK

Abstract: XP1072-BD
Contextual Info: 34.0-37.0 GHz GaAs MMIC Power Amplifier P1072-BD January 2009 - Rev 29-Jan-09 Features Ka-Band 4 W Power Amplifier 22.0 Small Signal Gain 35.0 dBm Pulsed Saturated Output Power 25% Power Added Efficiency PAE % 100% On-Wafer RF, DC and Output Power Testing

Contextual Info: 4 Watt Psat, 8 GHz to 11 GHz, High Power Amplifier, 28 dB Gain, SMA TECHNICAL DATA SHEET PE15A4015 PE15A4015 is a broadband 4 W GaAs PHEMT MMIC-based coaxial power amplifier module designed to be used in a wide range of commercial and defense applications in the 8 to 11 GHz frequency range. The amplifier offers 28 dB small signal

Contextual Info: SPA-110-30-04-SMA DATA SHEET High Power Amplifier at 4 Watt P1dB Operating From 8.5 GHz to 11 GHz with 30 dB Gain, 45 dBm IP3 and SMA SPA-110-30-04-SMA is a 4 W X-band coaxial power amplifier designed for high linearity applications in the 8.5 to 11 GHz frequency range. The amplifier offers