POWER AMPLIFIER NXP Search Results
POWER AMPLIFIER NXP Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| MGN1D050603MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 5-6/-3V GAN |
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| MGN1D120603MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-6/-3V GAN |
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| MGN1S1208MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-8V GAN |
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| MGN1S1212MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-12V GAN |
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| MGN1S0508MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 5-8V GAN |
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POWER AMPLIFIER NXP Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: NXP digital I2S-input mono Class-D audio amplifier TFA9882 Save power and space with I2S-input Class-D audio amplifier This small, mono digital-input Class-D audio amplifier delivers up to 3.4 W of power. It has ` ultra-low quiescent power consumption 6.5 mW , minimizes RF susceptibility, and is optimized ` |
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TFA9882 | |
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Contextual Info: NXP digital PDM-input mono Class-D audio amplifier TFA9881 Simplify your audio architecture with a PDM-input amplifier The ultra small mono digital-input Class-D audio amplifier, the TFA9881 delivers up to 3.4 W of power, has ultra-low quiescent power consumption 6.5 mW , minimizes RF susceptibility, |
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TFA9881 TFA9881 | |
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Contextual Info: NXP Class G stereo headphone amplifier SA58635 with I2C volume control High-fidelity headphone amplifier maximizes battery life This highly efficient Class G, 2x25 mW headphone amplifier features dynamic power management and uses the I2C bus for volume control. It saves power and extends music playback in a range of |
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SA58635 | |
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Contextual Info: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D252 BGD502 550 MHz, 18.5 dB gain power doubler amplifier Product specification Supersedes data of 1995 Oct 25 2001 Nov 15 NXP Semiconductors Product specification 550 MHz, 18.5 dB gain power doubler amplifier |
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M3D252 BGD502 OT115J R77/04/pp8 | |
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Contextual Info: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D252 BGD702N 750 MHz, 18.5 dB gain power doubler amplifier Product specification Supersedes data of 2001 Oct 25 2001 Nov 02 NXP Semiconductors Product specification 750 MHz, 18.5 dB gain power doubler amplifier |
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M3D252 BGD702N OT115J R77/03/pp9 | |
BGD802
Abstract: DIN45004B
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M3D252 BGD802 OT115J 613518/07/pp10 BGD802 DIN45004B | |
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Contextual Info: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D252 BGD712 750 MHz, 18.5 dB gain power doubler amplifier Product specification Supersedes data of 2001 Oct 29 2001 Nov 02 NXP Semiconductors Product specification 750 MHz, 18.5 dB gain power doubler amplifier |
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M3D252 BGD712 OT115J 613518/04/pp9 | |
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Contextual Info: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D252 BGD702 750 MHz, 18.5 dB gain power doubler amplifier Product specification Supersedes data of 2001 Nov 02 2001 Nov 27 NXP Semiconductors Product specification 750 MHz, 18.5 dB gain power doubler amplifier |
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M3D252 BGD702 OT115J 613518/07/pp10 | |
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Contextual Info: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D252 BGD816L 860 MHz, 21.5 dB gain power doubler amplifier Product specification Supersedes data of 2001 May 18 2001 Nov 15 NXP Semiconductors Product specification 860 MHz, 21.5 dB gain power doubler amplifier |
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M3D252 BGD816L OT115J R77/05/pp8 | |
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Contextual Info: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D252 BGD714 750 MHz, 20.3 dB gain power doubler amplifier Product specification Supersedes data of 2001 Oct 29 2001 Nov 02 NXP Semiconductors Product specification 750 MHz, 20.3 dB gain power doubler amplifier |
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M3D252 BGD714 OT115J 613518/04/pp9 | |
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Contextual Info: DISCRETE SEMICONDUCTORS DAT M3D252 BGD802 860 MHz, 18.5 dB gain power doubler amplifier Product specification Supersedes data of 2001 Oct 30 2002 Jan 23 NXP Semiconductors Product specification 860 MHz, 18.5 dB gain power doubler amplifier FEATURES BGD802 |
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M3D252 BGD802 OT115J 613518/07/pp10 | |
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Contextual Info: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D248 BGD885 860 MHz, 17 dB gain power doubler amplifier Product specification Supersedes data of 2001 Oct 25 2001 Nov 02 NXP Semiconductors Product specification 860 MHz, 17 dB gain power doubler amplifier FEATURES |
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M3D248 BGD885 OT115D R77/07/pp8 | |
BGD714
Abstract: DIN45004B
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M3D252 BGD714 OT115J 613518/04/pp9 BGD714 DIN45004B | |
BGD702
Abstract: DIN45004B
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M3D252 BGD702 OT115J 613518/07/pp10 BGD702 DIN45004B | |
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nxp hybrid amplifier modules
Abstract: BGD904 BGD904MI DIN45004B
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M3D252 BGD904; BGD904MI OT115J BGD904 613518/07/pp11 nxp hybrid amplifier modules BGD904 BGD904MI DIN45004B | |
BGD812
Abstract: DIN45004B
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M3D252 BGD812 OT115J 613518/04/pp10 BGD812 DIN45004B | |
BGD814
Abstract: DIN45004B
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M3D252 BGD814 OT115J 613518/04/pp10 BGD814 DIN45004B | |
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Contextual Info: DISCRETE SEMICONDUCTORS DAT book, halfpage M3D252 BGD812 860 MHz, 18.5 dB gain power doubler amplifier Product specification Supersedes data of 2001 Sep 07 2001 Oct 30 NXP Semiconductors Product specification 860 MHz, 18.5 dB gain power doubler amplifier FEATURES |
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M3D252 BGD812 OT115J 613518/04/pp10 | |
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Contextual Info: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D252 BGD804 860 MHz, 20 dB gain power doubler amplifier Product specification Supersedes data of 1999 Mar 26 2001 Nov 01 NXP Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier FEATURES |
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M3D252 BGD804 OT115J MSA319 R77/03/pp11 | |
BGD702N
Abstract: DIN45004B
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M3D252 BGD702N OT115J R77/03/pp9 BGD702N DIN45004B | |
BGD885
Abstract: DIN45004B
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M3D248 BGD885 OT115D R77/07/pp8 BGD885 DIN45004B | |
BGD804
Abstract: DIN45004B
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M3D252 BGD804 OT115J MSA319 R77/03/pp11 BGD804 DIN45004B | |
CGD923
Abstract: MGU820
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M3D848 CGD923 OT115AE 613518/01/pp8 CGD923 MGU820 | |
TDA1517PContextual Info: INTEGRATED CIRCUITS DAT TDA1517; TDA1517P 2 x 6 W stereo power amplifier Product specification Supersedes data of 2002 Jan 17 2004 Feb 18 NXP Semiconductors Product specification 2 x 6 W stereo power amplifier TDA1517; TDA1517P FEATURES GENERAL DESCRIPTION |
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TDA1517; TDA1517P TDA1517 HDIP18) R30/05/pp15 TDA1517P | |