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    POWER BIPOLAR JUNCTION TRANSISTOR Search Results

    POWER BIPOLAR JUNCTION TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    POWER BIPOLAR JUNCTION TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LDMOS

    Abstract: LDMOS digital bipolar junction transistor "RF Power Transistors" mosfet high power rf ldmos AN1223 amplitude modulation applications
    Text: AN1223 Application note RF power transistors: comparative study of LDMOS versus bipolar technology Introduction RF power transistors consist of two type of devices: Bipolar Junction BJT and Field Effect (FET). Due to differences in technology, the bipolar junction transistor yields superior


    Original     		PDF AN1223 LDMOS LDMOS digital bipolar junction transistor "RF Power Transistors" mosfet high power rf ldmos AN1223 amplitude modulation applications

    amplitude modulation applications

    Abstract: LDMOS AN1223
    Text: AN1223 APPLICATION NOTE RF POWER TRANSISTORS: COMPARATIVE STUDY OF LDMOS VERSUS BIPOLAR TECHNOLOGY Serge Juhel 1. ABSTRACT RF power transistors consist of two type of devices: Bipolar Junction BJT and Field Effect (FET). Due to differences in technology, the bipolar junction transistor will yield superior performance for certain


    Original     		PDF AN1223 amplitude modulation applications LDMOS AN1223

    mosfet high power rf ldmos

    Abstract: Bipolar Junction Transistor AN1223 RF MOSFET CLASS AB
    Text: AN1223 APPLICATION NOTE RF POWER TRANSISTORS: COMPARATIVE STUDY OF LDMOS VERSUS BIPOLAR TECHNOLOGY Serge Juhel 1. ABSTRACT RF power transistors consist of two type of devices: Bipolar Junction BJT and Field Effect (FET). Due to differences in technology, the bipolar junction transistor will yield superior performance for certain


    Original     		PDF AN1223 mosfet high power rf ldmos Bipolar Junction Transistor AN1223 RF MOSFET CLASS AB

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    GT30J124

    Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004I SC-43) 2SC1815 GT30J124 smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF 2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123

    bipolar junction transistor

    Abstract: FZT953 DZT3150 DZT853 DZT953 Bipolar Junction Transistor npn DZT851 DZT951 NPN medium power transistor in a SOT package 100V transistor npn 5a
    Text: New Product Announcement February 23, 2007 Announcing Medium Power SOT-223 Bipolar Junction Transistor Product Line Product Highlights DZT851, DZT853, DZT951, DZT953 • Single Transistors in SOT-223 Package • Highest Collector Current Rating Among Diodes, Inc.’s Bipolar Junction Transistor Product


    Original     		PDF OT-223 DZT851, DZT853, DZT951, DZT953 OT-223 DZT851 DZT951 DZT853 bipolar junction transistor FZT953 DZT3150 DZT853 DZT953 Bipolar Junction Transistor npn DZT851 DZT951 NPN medium power transistor in a SOT package 100V transistor npn 5a

    BU931 ST

    Abstract: BU931P BU931 bu931 equivalent BU931T
    Text: BU931 BU931P, BU931T High voltage ignition coil driver NPN power Darlington transistors Features • Very rugged Bipolar technology ■ High operating junction temperature ■ Wide range of packages TAB TAB Application ■ 1 2 2 The devices are bipolar Darlington transistors


    Original     		PDF BU931 BU931P, BU931T O-247 O-220 BU931 ST BU931P BU931 bu931 equivalent BU931T

    BU931P

    Abstract: BU931 BU931T JESD97
    Text: BU931 BU931P, BU931T High voltage ignition coil driver NPN power Darlington transistors Features • Very rugged Bipolar technology ■ High operating junction temperature ■ Wide range of packages Applications ■ 1 2 2 1 TO-247 Description The devices are bipolar Darlington transistors


    Original     		PDF BU931 BU931P, BU931T O-247 O-220 BU931P BU931 BU931T JESD97

    BU931

    Abstract: BU931P BU931T JESD97 W313 High voltage ignition coil driver NPN POWER DARLINGTON TRANSISTORS
    Text: BU931 BU931P, BU931T High voltage ignition coil driver NPN power Darlington transistors Features • Very rugged Bipolar technology ■ High operating junction temperature ■ Wide range of packages Applications ■ 1 2 2 1 TO-247 Description The devices are bipolar Darlington transistors


    Original     		PDF BU931 BU931P, BU931T O-247 O-220 JESD97. BU931 BU931P BU931T JESD97 W313 High voltage ignition coil driver NPN POWER DARLINGTON TRANSISTORS

    Untitled

    Abstract: No abstract text available
    Text: BCP5316Q 80V PNP MEDIUM POWER TRANSISTORS IN SOT223 Description Applications This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Medium Power Switching or Amplification Applications 


    Original     		PDF BCP5316Q OT223 -500mV BCP5616Q DS36980

    Untitled

    Abstract: No abstract text available
    Text: BCP5616Q 80V NPN MEDIUM POWER TRANSISTORS IN SOT223 Description Applications This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Medium Power Switching or Amplification Applications 


    Original     		PDF BCP5616Q OT223 500mV BCP5316Q DS36981

    Untitled

    Abstract: No abstract text available
    Text: BCP5316Q 80V PNP MEDIUM POWER TRANSISTORS IN SOT223 Description Applications This Bipolar Junction Transistor BJT has been designed to meet the • Medium Power Switching or Amplification Applications stringent requirements of Automotive Applications. •


    Original     		PDF BCP5316Q OT223 -500mV BCP5616Q DS36980

    reverse-conducting thyristor

    Abstract: gto Gate Drive circuit IGCT thyristor IGCT mitsubishi Usha Rectifier Emitter Turn-Off thyristor eto thyristor GTO triac HEXFET Power MOSFET designer manual MOS-Controlled Thyristor
    Text: I Power Electronic Devices 1 Power Electronics Kaushik Rajashekara, Sohail Anwar, Vrej Barkhordarian, Alex Q. Huang Overview • Diodes • Schottky Diodes • Thyristors • Power Bipolar Junction Transistors • MOSFETs • General Power Semiconductor Switch Requirements • Gate


    Original     		PDF MCT00, reverse-conducting thyristor gto Gate Drive circuit IGCT thyristor IGCT mitsubishi Usha Rectifier Emitter Turn-Off thyristor eto thyristor GTO triac HEXFET Power MOSFET designer manual MOS-Controlled Thyristor

    BUT23

    Abstract: No abstract text available
    Text: BUT232V NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS:


    Original     		PDF BUT232V BUT23

    BUV298AV

    Abstract: No abstract text available
    Text: BUV298AV NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS:


    Original     		PDF BUV298AV BUV298AV

    BUV98AV

    Abstract: No abstract text available
    Text: BUV98AV NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS:


    Original     		PDF BUV98AV BUV98AV

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD BU931Z NPN SILICON TRANSISTOR NPN POWER DARLINGTON  FEATURES * High Operating Junction Temperature * High Voltage Ignition Coil Driver * Very Rugged Bipolar Technology  INTERNAL SCHEMATIC DIAGRAM  ORDERING INFORMATION


    Original     		PDF BU931Z BU931ZL-TA3-T BU931ZG-TA3-T BU931ZL-T3P-T BU931ZG-T3P-T O-220 QW-R214-015

    welding rectifier schematic

    Abstract: schematic diagram UPS SMPS 30 smps circuit diagram BUV298AV
    Text: BUV298AV NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS INSULATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS:


    Original     		PDF BUV298AV welding rectifier schematic schematic diagram UPS SMPS 30 smps circuit diagram BUV298AV

    BUT32V

    Abstract: SMPS IC 2003 BUT32
    Text: BUT32V NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS FULLY INSULATED PACKAGE U.L. COMPLIANT FOR EASY MOUNTING LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS:


    Original     		PDF BUT32V BUT32V SMPS IC 2003 BUT32

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Power Bipolar Transistors „ Transistor Safe _Operating Area SOAR TRANSISTOR SAFE OPERATING AREA (SOAR) Average junction temperature There are two main limiting factors which affect the power handling ability of a transistor; the average


    OCR Scan     		PDF

    BUT30

    Abstract: No abstract text available
    Text: SGS-THOMSON BUT30V NPN TRANSISTOR POWER MODULE > HIGH CURRENT POWER BIPOLAR MODULE > VERY LOW Rih JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS • ISOLATED CASE 2500V RMS . EASY TO MOUNT ■ LOW INTERNAL PARASITIC INDUCTANCE 4 INDUSTRIAL APPLICATIONS:


    OCR Scan     		PDF BUT30V SC04830 BUT30

    Untitled

    Abstract: No abstract text available
    Text: £ = T SGS-THOMSON NPN TRANSISTOR POWER MODULE . HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW R,h JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS . ISOLATED CASE 2500V RMS . EASY TO MOUNT . LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS: . MOTOR CONTROL


    OCR Scan     		PDF BUT32V

    BUV98AV

    Abstract: No abstract text available
    Text: £ = T SGS-THOMSON NPN TRANSISTOR POWER MODULE . HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW R,h JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS . ISOLATED CASE 2500V RMS . EASY TO MOUNT . LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS: . MOTOR CONTROL


    OCR Scan     		PDF BUV98AV BUV98AV