POWER DIODE 20A 40V Search Results
POWER DIODE 20A 40V Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| MGN1S1212MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-12V GAN |
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| MGN1S0512MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 5-12V GAN |
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| MGN1S0508MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 5-8V GAN |
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| MGN1D120603MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-6/-3V GAN |
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| MGN1D050603MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 5-6/-3V GAN |
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POWER DIODE 20A 40V Datasheets Context Search
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Contextual Info: TP805C04 20A (40V / 20A ) Outline drawings, mm SCHOTTKY BARRIER DIODE K-Pack(L) Features JEDEC Low VF EIAJ Super high speed switching Connection diagram High reliability by planer design Applications High speed power switching 2 1 3 Maximum ratings and characteristics |
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TP805C04 500ns, | |
SCHOTTKY 20A 40V
Abstract: TP805C04 power diode 20a 40v TP805
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TP805C04 500ns, SCHOTTKY 20A 40V TP805C04 power diode 20a 40v TP805 | |
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Contextual Info: TP805C04 20A (40V / 20A ) Outline drawings, mm SCHOTTKY BARRIER DIODE K-Pack(L) Features JEDEC Low VF EIAJ Super high speed switching Connection diagram High reliability by planer design Applications High speed power switching 2 1 3 Maximum ratings and characteristics |
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TP805C04 500ns, | |
SCHOTTKY 20A 40V
Abstract: TP805
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TP805C04 500ns, SCHOTTKY 20A 40V TP805 | |
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Contextual Info: TP805C04 20A (40V / 20A ) Outline drawings, mm SCHOTTKY BARRIER DIODE K-Pack(L) Features JEDEC Low VF EIAJ Super high speed switching Connection diagram High reliability by planer design 種07. 機 定 h 20 Applications High speed power switching Maximum ratings and characteristics |
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TP805C04 500ns, | |
SUM60N04-05LTContextual Info: SUM60N04-05LT New Product Vishay Siliconix N-Channel 40-V D-S MOSFET with Sensing Diode FEATURES PRODUCT SUMMARY V(BR)DSS (V) 40 rDS(on) (W) ID (A) 0.0045 @ VGS = 10 V 60a 0.0065 @ VGS = 4.5 V 20a D TrenchFETr Power MOSFETS Plus Temperature Sensing Diode |
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SUM60N04-05LT S-05061--Rev. 12-Nov-01 SUM60N04-05LT | |
SUM60N04-05LTContextual Info: SUM60N04-05LT Vishay Siliconix N-Channel 40-V D-S MOSFET with Sensing Diode FEATURES PRODUCT SUMMARY V(BR)DSS (V) 40 rDS(on) (W) ID (A) 0.0045 @ VGS = 10 V 60a 0.0065 @ VGS = 4.5 V 20a D TrenchFETr Power MOSFETS Plus Temperature Sensing Diode D 175_C Junction Temperature |
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SUM60N04-05LT S-40862--Rev. 03-May-04 SUM60N04-05LT | |
SUM60N04-05LTContextual Info: SUM60N04-05LT Vishay Siliconix N-Channel 40-V D-S MOSFET with Sensing Diode FEATURES PRODUCT SUMMARY V(BR)DSS (V) 40 rDS(on) (W) ID (A) 0.0045 @ VGS = 10 V 60a 0.0065 @ VGS = 4.5 V 20a D TrenchFETr Power MOSFETS Plus Temperature Sensing Diode D 175_C Junction Temperature |
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SUM60N04-05LT 08-Apr-05 SUM60N04-05LT | |
D2GDContextual Info: SUM60N04-05LT Vishay Siliconix N-Channel 40-V D-S MOSFET with Sensing Diode FEATURES PRODUCT SUMMARY V(BR)DSS (V) 40 rDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 60a 0.0065 at VGS = 4.5 V 20a • TrenchFET Power MOSFETS Plus Temperature Sensing Diode • 175 °C Junction Temperature |
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SUM60N04-05LT SUM60N04-05LT SUM60N04-05LT-E3 11-Mar-11 D2GD | |
SUM60N04-05LTContextual Info: SUM60N04-05LT Vishay Siliconix N-Channel 40-V D-S MOSFET with Sensing Diode FEATURES PRODUCT SUMMARY V(BR)DSS (V) 40 rDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 60a 0.0065 at VGS = 4.5 V 20a • TrenchFET Power MOSFETS Plus Temperature Sensing Diode • 175 °C Junction Temperature |
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SUM60N04-05LT SUM60N04-05LT SUM60N04-05LT-E3 08-Apr-05 | |
SUM60N04-05LTContextual Info: SUM60N04-05LT Vishay Siliconix N-Channel 40-V D-S MOSFET with Sensing Diode FEATURES PRODUCT SUMMARY V(BR)DSS (V) 40 rDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 60a 0.0065 at VGS = 4.5 V 20a • TrenchFET Power MOSFETS Plus Temperature Sensing Diode • 175 °C Junction Temperature |
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SUM60N04-05LT SUM60N04-05LT-E3 18-Jul-08 SUM60N04-05LT | |
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Contextual Info: SUM60N04-05LT Vishay Siliconix N-Channel 40-V D-S MOSFET with Sensing Diode FEATURES PRODUCT SUMMARY V(BR)DSS (V) 40 rDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 60a 0.0065 at VGS = 4.5 V 20a • TrenchFET Power MOSFETS Plus Temperature Sensing Diode • 175 °C Junction Temperature |
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SUM60N04-05LT SUM60N04-05LT SUM60N04-05LT-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
IRL7YS1404CMContextual Info: PD - 94676 HEXFET POWER MOSFET THRU-HOLE Low-ohmic TO-257AA IRL7YS1404CM 40V, N-CHANNEL Product Summary Part Number IRL7YS1404CM RDS(on) 0.007Ω BVDSS 40V ID 20A* Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing |
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O-257AA) IRL7YS1404CM hig92 5M-1994. O-257AA. IRL7YS1404CM | |
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Contextual Info: AON6440 40V N-Channel MOSFET SDMOS TM General Description Product Summary The AON6440 is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well |
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AON6440 AON6440 | |
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Contextual Info: PD - 94676 HEXFET POWER MOSFET THRU-HOLE Low-ohmic TO-257AA IRL7YS1404CM 40V, N-CHANNEL Product Summary Part Number IRL7YS1404CM RDS(on) 0.007Ω BVDSS 40V ID 20A* Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing |
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O-257AA) IRL7YS1404CM 5M-1994. O-257AA. | |
AOT440Contextual Info: AOT440 40V N-Channel MOSFET TM SDMOS General Description Product Summary TM The AOT440 is fabricated with SDMOS trench technology that combines excellent RDS ON with low gate charge & low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal technology is |
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AOT440 AOT440 | |
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Contextual Info: AON6440 40V N-Channel MOSFET SDMOS TM General Description Product Summary The AON6440 is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well |
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AON6440 AON6440 | |
AON6440LContextual Info: AON6440L 40V N-Channel MOSFET TM SDMOS General Description Product Summary The AON6440L is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited |
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AON6440L AON6440L TCON6440L | |
AOB442Contextual Info: AOB442 40V N-Channel MOSFET TM SDMOS General Description Product Summary VDS TM The AOB442 is fabricated with SDMOS trench technology that combines excellent RDS ON with low gate charge and low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal |
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AOB442 AOB442 O-263 DraB442 | |
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Contextual Info: AOT440 40V N-Channel MOSFET SDMOS TM General Description Product Summary The AOT440 is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge & low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal technology is |
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AOT440 AOT440 | |
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Contextual Info: AOT440 40V N-Channel MOSFET SDMOS TM General Description Product Summary The AOT440 is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge & low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal technology is |
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AOT440 AOT440 | |
AON6240
Abstract: 40ida
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AON6240 AON6240 40ida | |
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Contextual Info: AON6236 40V N-Channel MOSFET General Description Product Summary VDS The AON6236 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized due to an extremely low combination of |
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AON6236 AON6236 | |
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Contextual Info: AON6234 40V N-Channel MOSFET General Description Product Summary VDS The AON6234 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized due to an extremely low combination of |
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AON6234 AON6234 | |