POWER DIODE 500V 10A Search Results

B20NM50FD

Abstract: P20NM50FD F20NM50D P20NM50 STP20NM50FD B20NM50 STB20NM50FD STF20NM50D ZVS phase-shift converters
Contextual Info: STP20NM50FD STF20NM50D - STB20NM50FD N-CHANNEL 500V - 0.22Ω - 20A TO-220/TO-220FP/D2PAK FDmesh Power MOSFET with FAST DIODE TYPE VDSS RDS(on) Rds(on)*Qg ID STP20NM50FD STF20NM50D STB20NM50FD 500V 500V 500V <0.25Ω <0.25Ω <0.25Ω 8.36 Ω*nC 8.36 Ω*nC

Contextual Info: STP20NM50FD STB20NM50FD-1 N-CHANNEL 500V - 0.22Ω - 20A TO-220/I 2PAK FDmesh Power MOSFET with FAST DIODE TYPE STP20NM50FD STB20NM50FD-1 • ■ ■ ■ ■ ■ VDSS RDS(on) ID 500V 500V <0.25Ω <0.25Ω 20 A 20 A TYPICAL RDS(on) = 0.22Ω HIGH dv/dt AND AVALANCHE CAPABILITIES

TO220I

Abstract: STP20NM50FD
Contextual Info: STP20NM50FD STB20NM50FD N-CHANNEL 500V - 0.22Ω - 20A TO-220/I PAK FDmesh Power MOSFET with FAST DIODE TYPE STP20NM50FD STB20NM50FD-1 • ■ ■ ■ ■ ■ VDSS RDS(on) ID 500V 500V <0.25Ω <0.25Ω 20 A 20 A TYPICAL RDS(on) = 0.22Ω HIGH dv/dt AND AVALANCHE CAPABILITIES

STB20NM50FD-1

Abstract: SD20A STP20NM50FD
Contextual Info: Q * Be R t s g STP20NM50FD STB20NM50FD-1 n o ds N-CHANNEL 500V - 0.22Ω - 20A TO-220/I2PAK FDmesh Power MOSFET (with FAST DIODE) TYPE VDSS RDS(on) Rds(on)*Qg ID STP20NM50FD STB20NM50FD-1 500V 500V <0.25Ω <0.25Ω 8.36 Ω*nC 8.36 Ω*nC 20 A 20 A

S-1380

Abstract: STB20NM50FD-1 STP20NM50FD ZVS phase-shift converters
Contextual Info: Q * Be R t s g STP20NM50FD STB20NM50FD-1 n o ds N-CHANNEL 500V - 0.22Ω - 20A TO-220/I2PAK FDmesh Power MOSFET (with FAST DIODE) TYPE VDSS RDS(on) Rds(on)*Qg ID STP20NM50FD STB20NM50FD-1 500V 500V <0.25Ω <0.25Ω 8.36 Ω*nC 8.36 Ω*nC 20 A 20 A

P20NM50FD

Abstract: B20NM50FD P20NM50 STP20NM50FD B20NM50FD-1 STB20NM50FD-1 ZVS phase-shift converters
Contextual Info: STP20NM50FD STB20NM50FD-1 N-CHANNEL 500V - 0.22Ω - 20A TO-220/I2PAK FDmesh Power MOSFET with FAST DIODE TYPE VDSS RDS(on) Rds(on)*Qg ID STP20NM50FD STB20NM50FD-1 500V 500V <0.25Ω <0.25Ω 8.36 Ω*nC 8.36 Ω*nC 20 A 20 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.22Ω

S-1380

Abstract: STB20NM50FD-1 STP20NM50FD ZVS phase-shift converters 836 DIODE current
Contextual Info: Q * B • ■ ■ ■ ■ ■ R t es g STP20NM50FD STB20NM50FD-1 n o ds N-CHANNEL 500V - 0.22Ω - 20A TO-220/I 2PAK FDmesh Power MOSFET (with FAST DIODE) TYPE VDSS R DS(on) R ds(on)*Qg ID STP20NM50FD STB20NM50FD-1 500V 500V <0.25Ω <0.25Ω 8.36 Ω*nC

STB20NM50FD

Abstract: ZVS phase-shift converters
Contextual Info: STB20NM50FD N-CHANNEL 500V - 0.20Ω - 20A D2PAK FDmesh Power MOSFET With FAST DIODE PRELIMINARY DATA TYPE STB20NM50FD n n n n n n VDSS RDS(on) ID 500V < 0.25Ω 20 A TYPICAL RDS(on) = 0.20Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED

Contextual Info: STB20NM50FD N-CHANNEL 500V - 0.20Ω - 20A D2PAK FDmesh Power MOSFET With FAST DIODE PRELIMINARY DATA TYPE STB20NM50FD • ■ ■ ■ ■ ■ VDSS RDS(on) ID 500V < 0.25Ω 20 A TYPICAL RDS(on) = 0.20Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED

IXFN64N50PD2

Abstract: 64N50P SOT227B package 64N50
Contextual Info: IXFN64N50PD2 IXFN64N50PD3 PolarHVTM HiPerFET Power MOSFET Boost & Buck Configurations Ultra-fast FRED Diode VDSS ID25 RDS(on) trr 3 3 miniBLOC, SOT-227 B E153432 4 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500V = 50A Ω ≤ 85mΩ

IXFN64N50PD2

Abstract: IXFN64N50PD3
Contextual Info: IXFN64N50PD2 IXFN64N50PD3 PolarHVTM HiPerFET Power MOSFETs Boost & Buck Configurations Ultra-fast FRED Diode VDSS ID25 RDS(on) trr 3 3 miniBLOC E153432 4 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500V = 50A   85m  200ns

Contextual Info: PolarHVTM HiPerFET Power MOSFET VDSS ID25 IXFN64N50PD2 IXFN64N50PD3 RDS on Boost & Buck Configurations (Ultra-fast FRED Diode) trr 3 3 miniBLOC, SOT-227 B E153432 4 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500V = 50A Ω ≤ 85mΩ

mosfet 500v 10A

Abstract: diode 500v 10A mosfet 10a 500v power diode 500v 10A 2SK1278
Contextual Info: 2SK1278 N-channel MOS-FET F-V Series 500V > Features 1,1Ω 10A 100W > Outline Drawing - Include Fast Recovery Diode - High Voltage - Low Driving Power > Applications - Motor Control - Inverters - Choppers > Maximum Ratings and Characteristics > Equivalent Circuit

Contextual Info: STW20NM50FD N-CHANNEL 500V - 0.22Ω - 20A TO-247 FDmesh Power MOSFET with FAST DIODE TYPE STW20NM50FD • ■ ■ ■ ■ ■ VDSS RDS(on) ID 500V <0.25Ω 20 A TYPICAL RDS(on) = 0.22Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE

Contextual Info: STW20NM50FD N-CHANNEL 500V - 0.22Ω - 20A TO-247 FDmesh Power MOSFET with FAST DIODE TYPE STW20NM50FD • ■ ■ ■ ■ ■ VDSS RDS(on) ID 500V <0.25Ω 20 A TYPICAL RDS(on) = 0.22Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE

Contextual Info: 2SK1278 N-channel MOS-FET F-V Series 500V > Features 1,1Ω 10A 100W > Outline Drawing - Include Fast Recovery Diode - High Voltage - Low Driving Power > Applications - Motor Control - Inverters - Choppers > Maximum Ratings and Characteristics > Equivalent Circuit

S-1380

Abstract: STW20NM50FD ZVS phase-shift converters
Contextual Info: STW20NM50FD N-CHANNEL 500V - 0.22Ω - 20A TO-247 FDmesh Power MOSFET with FAST DIODE TYPE STW20NM50FD • ■ ■ ■ ■ ■ VDSS RDS(on) ID 500V <0.25Ω 20 A TYPICAL RDS(on) = 0.22Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE

Contextual Info: STW20NM50FD N-CHANNEL 500V - 0.22Ω - 20A TO-247 FDmesh Power MOSFET with FAST DIODE TYPE STW20NM50FD • ■ ■ ■ ■ ■ VDSS RDS(on) ID 500V <0.25Ω 20 A TYPICAL RDS(on) = 0.22Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE

Contextual Info: STW20NM50FD N-CHANNEL 500V - 0.22Ω - 20A TO-247 FDmesh Power MOSFET with FAST DIODE TYPE STW20NM50FD • ■ ■ ■ ■ ■ VDSS RDS(on) ID 500V <0.25Ω 20 A TYPICAL RDS(on) = 0.22Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE

IXFC16N50P

Abstract: 16n50 16N50P F16N f16n50
Contextual Info: IXFC16N50P PolarHVTM HiPerFET Power MOSFET VDSS ID25 RDS on trr (Electrically Isolated Back Surface) = = ≤ ≤ 500V 10A Ω 450mΩ 200ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode ISOPLUS 220TM E153432 Symbol Test Conditions Maximum Ratings

Contextual Info: PolarHVTM HiPerFET Power MOSFET VDSS ID25 IXFC16N50P RDS on trr (Electrically Isolated Back Surface) = = ≤ ≤ 500V 10A Ω 450mΩ 200ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode ISOPLUS 220TM E153432 Symbol Test Conditions Maximum Ratings

Contextual Info: F U JI lä 'U J M s u 'ü ü U K 2SK1278 N-channel MOS-FET F-V Series 500V > Features - l,lß 10A 100W > Outline Drawing Include Fast Recovery Diode High Voltage Low Driving Power > Applications - Motor Control Inverters Choppers > Maximum Ratings and Characteristics

Contextual Info: Ordering number : EN1509A SFT1423 N-Channel Power MOSFET http://onsemi.com 500V, 2A, 4.9Ω, Single TP/TP-FA Features • • ON-resistance 4V drive • Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage

IPM30A V1.0

Contextual Info: FAST RECOVERY DIODE 30KF50E 30KF50B 33A /500V /trr : 70nsec FEATURES o Similar to TO- 247AC Case o Ultra — Fast Recovery ° Low Forward Voltage Drop o Low Power Loss, High Efficiency ° High Suiige Capability • 100 Volts thru 600 Volts Types Available