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    POWER DIODES WITH V-I CHARACTERISTICS Search Results

    POWER DIODES WITH V-I CHARACTERISTICS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    POWER DIODES WITH V-I CHARACTERISTICS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    laser diode for rw drive

    Abstract: No abstract text available
    Text: MITSUBISHI LASER DIODES t n e m p elo v e D r Unde inary TYPE NAME ML6XX24 SERIES FOR OPTICAL INFORMATION SYSTEMS m i l e r P ML60124R, ML601J24 FEATURES DESCRIPTION ML6XX24 is a high power AlGaAs semiconductor laser which provides a stable, single transverse mode oscillation with


    Original     		PDF ML6XX24 ML60124R, ML601J24 785nm ML60124R ML60124R laser diode for rw drive

    IXAN0044

    Abstract: D94013DE ups manufacturing transformer diagram Bridge Rectifiers aeg MEO260-12DA3 AEG static inverter MOSFET welding INVERTER welding inverter circuit diagrams calculation of diode snubber calculation of IGBT snubber
    Text: Fast Recovery Epitaxial Diodes FRED Characteristics - Applications - Examples IXAN0044 Rüdiger Bürkel, Thomas Schneider During the last 10 years, power supply topology has undergone a basic change. Power supplies of all kinds are now constructed so that heavy and bulky


    Original     		PDF IXAN0044 D94013DE) IXAN0044 D94013DE ups manufacturing transformer diagram Bridge Rectifiers aeg MEO260-12DA3 AEG static inverter MOSFET welding INVERTER welding inverter circuit diagrams calculation of diode snubber calculation of IGBT snubber

    Mixer and Detector Diodes

    Abstract: X-Band Motion Detector "zero-bias schottky diode" ST Low Forward Voltage Schottky Diode gold metal detectors VF-8Z microwave motion sensors balun diode mixer motion sensor doppler x band diode detector waveguide
    Text: APPLICATION NOTE Mixer and Detector Diodes Surface Barrier Diodes Electrical Characteristics and Physics of Schottky Barriers Most people who use diodes are more familiar with junction devices than with the surface barrier diodes commonly used in mixer and detector circuits. In a junction diode the rectifying


    Original     		PDF

    power BJT DARLINGTON PAIR NPN

    Abstract: lcd inverter n mosfet cross reference BAT54A RF NPN Power BJT 100v l43 transistor transistor L42 ZBAT54C ZBAT54A Digital Transistors Cross Reference transistors diodes ics cross reference
    Text: BAT54 SERIES SOT23 SILICON EPITAXIAL SCHOTTKY BARRIER DIODES ISSUE 1– SEPTEMBER 1995 1 BAT54 SERIES ✪ 1 1 1 TYPICAL CHARACTERISTICS 1 10m 100m 3 1m 10m +125°C +85°C +25°C 1m +125°C 3 +85°C 100µ 10µ 100µ 10µ 0.15 0.3 0.45 0.6 Forward Voltage VF V


    Original     		PDF BAT54 BAT54A BAT54S BAT54C 05-Oct-2010 1280x768px. power BJT DARLINGTON PAIR NPN lcd inverter n mosfet cross reference BAT54A RF NPN Power BJT 100v l43 transistor transistor L42 ZBAT54C ZBAT54A Digital Transistors Cross Reference transistors diodes ics cross reference

    AN599

    Abstract: AN-599 BY255 diode BYT261 100C BY255 BYT60P BYV255 BYW51
    Text: AN599 APPLICATION NOTE PARALLEL OPERATION OF POWER RECTIFIERS INTRODUCTION In parallel operation of several diodes, the current is not split into equal parts because of differences between forward characteristics. The current through the rectifier having the lowest voltage drop will be higher than the current through the


    Original     		PDF AN599 AN599 AN-599 BY255 diode BYT261 100C BY255 BYT60P BYV255 BYW51

    ATTP1

    Abstract: BZX85 BZX851
    Text: <jX >G e n e r a l v BZX85 Series S e m ic o n d u c t o r Zener Diodes Vz Range 3.6 to 200V Power Dissipation 1,3W DO-2Q4AL DO-41 Glass Features -f+i ►Silicon Planar Power Zener Diodes. i >For use in stabilizing and clipping circuits with high power rating.


    OCR Scan     		PDF BZX85 DO-41 10K/box 10K/borature BZX85. ATTP1 BZX851

    Untitled

    Abstract: No abstract text available
    Text: v G eneral S e m ic o n i ZPU100 thru ZPU180 Zener Diodes Vz Range 100 to 180V Power Dissipation 1.3W D0-204AL DO-41 Glass Features “ iti Ì • Silicon Planar Zener Diodes I • For use in stabilizing and clipping circuits with higher power rating. • The Zener voltages are graded according to the


    OCR Scan     		PDF ZPU100 ZPU180 D0-204AL DO-41 ZMU100 ZMU180. 10K/box 10K/box Dimensio25

    siemens igbt BSM 150 gb 100 d

    Abstract: siemens igbt BSM 100 gb siemens igbt BSM 150 Gb 160 d siemens igbt BSM 50 gb 120 d siemens igbt BSM 300 siemens igbt chip siemens igbt BSM 100
    Text: r i 3 r I i C f i l m i c v i t u r d o r U O I V e a I n v i u r ï D V J L -l n I o n r t K i o C - \J ^ IGBT Power Module • Haif-bridge ' • including fast free-wheeiing diodes 'jm • Package with insulated metai base piate VM4UJ0/3 Type ^CE Package


    OCR Scan     		PDF C67076-A2105-A67 Oct-13-1995 Oct-13-1995 siemens igbt BSM 150 gb 100 d siemens igbt BSM 100 gb siemens igbt BSM 150 Gb 160 d siemens igbt BSM 50 gb 120 d siemens igbt BSM 300 siemens igbt chip siemens igbt BSM 100

    siemens igbt BSM 150 gb 100 d

    Abstract: siemens igbt BSM 150 Gb 160 d Semiconductor Group igbt siemens igbt BSM 50 gb 100 d siemens igbt BSM 100 gb siemens igbt chip ScansUX69 siemens igbt BSM 100 siemens igbt BSM 400 gb siemens igbt BSM 25 gb 100 d
    Text: r i 3 r I i C f i l m i c v i t u r d o r U O I V e a I n v i u r ï D V J L -l n I o n r t K i o C - \J ^ IGBT Power Module • Haif-bridge ' • including fast free-wheeiing diodes 'jm • Package with insulated metai base piate VM4UJ0/3 Type ^CE Package


    OCR Scan     		PDF C67076-A2105-A67 Oct-13-1995 siemens igbt BSM 150 gb 100 d siemens igbt BSM 150 Gb 160 d Semiconductor Group igbt siemens igbt BSM 50 gb 100 d siemens igbt BSM 100 gb siemens igbt chip ScansUX69 siemens igbt BSM 100 siemens igbt BSM 400 gb siemens igbt BSM 25 gb 100 d

    ST02D-170F2

    Abstract: AHA 500 ST02D-1 Zener Diode marking 3a DIODE CQ U180
    Text: m n m ^ /u x Power-Clamper Surface M ount D evice m s Z e n e r Diode with F as t Recovery Diode • f t M U ! OUTLINE ST02D-170F2 170V 200W ftft ■H i Feature ■ Power Zener Diodes with FRD ■ SMD Package ■ Application for snubber circuit £ V\ 'T ¿5 V


    OCR Scan     		PDF ST02D-170F2 wavefi50HzTiS ST02D-170F2 AHA 500 ST02D-1 Zener Diode marking 3a DIODE CQ U180

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE 1N746A to 1N759A 2SE D bt.s3i3i aoi73ki? a • T -tt-O l I 400 mW ZENER DIODES Silicon planar diodes in DO-35 packages intended for use as low power voltage stabilizers or voltage references. The series consists of 14 types with nominal working voltages ranging from 3.3 to 12 V.


    OCR Scan     		PDF 1N746A 1N759A aoi73ki? DO-35 DO-35 1N746A 1N747A 1N748A 1N749A 1N750A

    LB-156

    Abstract: LB156 LB 156 ctb 34 RECTIFIER CTM32R LB156 33 A
    Text: SANKEN ELECTRIC U S A H E Rectifier Diodes for Power Supply D I TTTDTm IVrm : 5 0 —800V 0D0007S 0 | Hlo :1.5—15A T - 3 .3 - O S ’ CfM/RB/LBs«te V rsm V rm V (V) lo (A) If s m (A) Tstg (°C) Vf Ir Ifkhi (V) (ii A) (/¿A) SOHz Half Sine with Wave CTM-31S


    OCR Scan     		PDF 0D0007S --800V CTM-31S CTM-31R CTM-32S CTM-32R CTM-34S CTM-34R RB-150 RB-151 LB-156 LB156 LB 156 ctb 34 RECTIFIER CTM32R LB156 33 A

    ior e78996

    Abstract: No abstract text available
    Text: Bulletin 127403 rev. A 09/97 International i ö r Rectifier IRKDL450.S20 FAST DIODES s e r ie s SUPER MAGN-A-pak Power Modules Features • High power FAST recovery diode series ■ High current capability 460 A ■ 3000 V RMS isolating voltage with non-toxic substrate


    OCR Scan     		PDF IRKDL450. E78996 I27403 ior e78996

    aS3131

    Abstract: 1N746A 1N747A 1N748A 1N749A 1N750A 1N751A 1N759A air temperature 1N753A
    Text: tr - N AMER P H IL IP S/ DI SC RE TE bfc,5313Ì 001731*7 a 2SE B 1N746A to 1N759A T-ll~07 i ; 400 mW ZENER DIODES , Silicon planar diodes in DO-35 packages intended for use as low power voltage stabilizers or voltage references. The series consists of 14 types with nominal working voltages ranging from 3.3 to 12 V.


    OCR Scan     		PDF 1N746A 1N759A T-11-Ã DO-35 DO-35 1N759A 1N747A 1N748A aS3131 1N749A 1N750A 1N751A air temperature 1N753A

    BSM15GD120D

    Abstract: No abstract text available
    Text: SIEMENS B SM 15 G D 120 D IG B T Module Preliminary Data VCE = 1200 V I c = 6 x 25 A at Tc = 25 "C I c = 6 x 1 5 A at r o = 80" C • Power module • 3-phase full bridge • Including fast free-wheel diodes • Package with insulated metal base plate • Package outlines/Circuit diagram: 31’


    OCR Scan     		PDF C67076-A2504-A2 BSM15GD120D

    Untitled

    Abstract: No abstract text available
    Text: C i ir ly f f r * , c IGBT Module BSM 25 GD 100 D Preliminary Data VCE = 1000 V = 6 x 25 A lc • • • • • Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plate Circuit diagram: Fig. 3 b 1 Type Ordering code


    OCR Scan     		PDF C67076-A2501-A2

    siemens igbt BSM 50 gb 120 d

    Abstract: No abstract text available
    Text: SIEMENS IGBT Module Preliminary Data BSM 75 GB 120 D BSM 75 GAL 120 D VCE = 1200 V / c = 2 x 100 A at Tc = 25 "C I c = 2 x 75 A at Tc = 80 C • • • • • Power module Half-bridge/Chopper Including fast free-wheel diodes Package with insulated metal base plate


    OCR Scan     		PDF C67076-A2106-A2 C67076-A2011-A2 siemens igbt BSM 50 gb 120 d

    siemens igbt BSM 75 gb 100

    Abstract: No abstract text available
    Text: SIEMENS BSM 150 GB 120 D BSM150 G AL 120 D IGBT Module Preliminary Data : 2 X 200 A at Tc = 25 7 V = 80 /< I c = 2 x 1 5 0 A at Power m odule Half-bridge/Chopper Including fast free-wheel diodes Package with insulated metal base plate Package outlines/C ircuit diagram : 5a, 5 b ':


    OCR Scan     		PDF BSM150 C67076-A2108-A2 7076-A 2013-A2 siemens igbt BSM 75 gb 100

    siemens igbt BSM 25 gb 100 d

    Abstract: siemens igbt BSM 100 gb siemens igbt BSM 150 Gb 160 d siemens igbt BSM 50 gb 100 d igbt module bsm 300
    Text: SIEMENS BSM 25 GB 100 D BSM 25 GAL 100 D IGBT Module Preliminary Data VCE = 1000 V / c = 2 x 3 5 A at Tc = 25 C I c = 2 x 2 5 A at r c = 80 C • • • • • Power m odule H alf-bridge/Chopper Including fast free-wheel diodes Package with insulated metal base plate


    OCR Scan     		PDF C67076-A2101-A2 C67076-A2008-A2 SIID0022 SII00023 SII00021 RSM25AA1 siemens igbt BSM 25 gb 100 d siemens igbt BSM 100 gb siemens igbt BSM 150 Gb 160 d siemens igbt BSM 50 gb 100 d igbt module bsm 300

    Untitled

    Abstract: No abstract text available
    Text: r= J * 7 # SG S -T H O M S O N . * ß M [ E O T i 2 * S L 9 3 2 6 DUAL INTELLIGENT POWER LOW SIDE SWITCH PRODUCT PREVIEW • DUAL POW ER LOW SIDE DRIVER WITH LOW R dson TYPICALLY 250m£} (Tj = 25°C . INTERNAL OUTPUT CLAMPING DIODES V fb = 50V FOR INDUCTIVE RECIRCULATION


    OCR Scan     		PDF L9326

    Diode BA 163

    Abstract: No abstract text available
    Text: Zero Bias Detector Diodes Features • CAN BE USED WITHOUT EXTERNAL DC BIAS ■ EXHIBIT UNIFORM Rv CHARACTERISTICS ■ HIGH VOLTAGE SENSITIVITY ■ AVAILABLE IN PACKAGES, CHIPS AND BEAM LEADS Applications This family of Zero Bias Detector ZBD diodes is designed


    OCR Scan     		PDF

    MA4E932A

    Abstract: MA4E931C MA4E932B MA40186 MA40186B MA40186C MA40187D MA4E929 MA4E929A MA4E929B
    Text: an A M P company Zero Bias Detector Diodes V 2.00 Features Case Styles • • • • sions Can Be Used Without External DC Bias Exhibit Uniform Rv Characteristics High Voltage Sensitivity Available in Packages, Chips and Beam Leads See appendix for complete dimen­


    OCR Scan     		PDF 100Kb MA4E932A MA4E931C MA4E932B MA40186 MA40186B MA40186C MA40187D MA4E929 MA4E929A MA4E929B

    Untitled

    Abstract: No abstract text available
    Text: n/A-CON SEMICONDnBRLNGTON 11 D S b l4 2 S m 0G0134Û b • MIC / - O 7 ^ -6 7 /M W Zero Bias Detector Diodes Features ■ CAN BE USED WITHOUT EXTERNAL DC BIAS ■ EXHIBIT UNIFORM Rv CHARACTERISTICS ■ HIGH VOLTAGE SENSITIVITY ■ AVAILABLE IN PACKAGES, CHIPS


    OCR Scan     		PDF 0G0134Û 5b4EE14 DQG13S4

    Silicon Point Contact Diode

    Abstract: No abstract text available
    Text: TYPICAL D.C. CHARACTERISTICS 36 37 1 Low barrier PDB 1 1 Ze o Bias P D B - 1 i Sta ndard GaAs Setlottky r .♦V ✓ 3 ^ ✓ l / • 4 ik \ " Standard GaAs \ Schottky \ I Low barrier PDB 2 " / X Zero Bia s PDB I 10 -20- ; Voltage N Current /mA 8 / Figure 10. Comparison of the l-V characteristics o f a 'zero bias' PDB diode, a low barrier PDB diode and a standard


    OCR Scan     		PDF 375GHz DC1596) OC1301) -10dB -20dB 35GHz 150pA. Silicon Point Contact Diode