POWER DISSIPATION IN POWER STAGE Search Results

sot-23 74w datasheet

Abstract: APP1832 IRF6603 IRF6604 MAX1544 MAX1718 MAX1897
Contextual Info: Maxim > App Notes > POWER-SUPPLY CIRCUITS PROTOTYPING AND PC BOARD LAYOUT Keywords: power dissipation, resistive loss, switching loss, power MOSFETs Dec 26, 2002 APPLICATION NOTE 1832 Power Supply Engineer's Guide to Calculate Dissipation for MOSFETs in High-Power Supplies

TMS320C40

Abstract: Architecture of TMS320C4X FLOATING POINT PROCESSOR
Contextual Info: Calculation of TMS320C40 Power Dissipation Application Report 1993 Digital Signal Processing Products Printed in U.S.A., November 1993 SPRA032 Calculation of TMS320C40 Power Dissipation Application Report Jenny Hong Digital Signal Processing Products - Semiconductor Group

TMS320C40

Contextual Info: Calculation of TMS320C40 Power Dissipation Application Report 1993 Digital Signal Processing Products Printed in U.S.A., November 1993 SPRA032 Calculation of TMS320C40 Power Dissipation Application Report Jenny Hong Digital Signal Processing Products - Semiconductor Group

XAL4040-103

Abstract: star delta ladder diagram AD5755-1 xal4040 transorb diode BIDIRECTIONAL transorb application note AD5737 ADP2302 ADP2303 ADR02
Contextual Info: Quad-Channel, 12-Bit, Serial Input, 4 mA to 20 mA and Voltage Output DAC with Dynamic Power Control AD5735 On-chip dynamic power control minimizes package power dissipation in current mode. This reduced power dissipation is achieved by regulating the voltage on the output driver from

transorb diode BIDIRECTIONAL

Abstract: GRM32ER71H475KA88L star delta ladder diagram star delta timer dac 51
Contextual Info: Quad-Channel, 12-Bit, Serial Input, 4 mA to 20 mA and Voltage Output DAC with Dynamic Power Control AD5735 Data Sheet On-chip dynamic power control minimizes package power dissipation in current mode. This reduced power dissipation is achieved by regulating the voltage on the output driver from

XAL4040-103

Abstract: star delta ladder diagram adum1411
Contextual Info: Quad-Channel, 12-Bit, Serial Input, 4 mA to 20 mA and Voltage Output DAC with Dynamic Power Control AD5735 Data Sheet FEATURES On-chip dynamic power control minimizes package power dissipation in current mode. This reduced power dissipation is achieved by regulating the voltage on the output driver from

Contextual Info: Quad-Channel, 12-Bit, Serial Input, 4 mA to 20 mA and Voltage Output DAC with Dynamic Power Control AD5735 Data Sheet FEATURES On-chip dynamic power control minimizes package power dissipation in current mode. This reduced power dissipation is achieved by regulating the voltage on the output driver from

Contextual Info: Quad-Channel, 12-Bit, Serial Input, 4 mA to 20 mA and Voltage Output DAC with Dynamic Power Control AD5735 Data Sheet FEATURES On-chip dynamic power control minimizes package power dissipation in current mode. This reduced power dissipation is achieved by regulating the voltage on the output driver from

2SA757

Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA757 DESCRIPTION •High Power Dissipation: PC= 60W Max. @TC=25℃ ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -90V(Min.) APPLICATIONS ·Designed for use in audio amplifier power output stage and

Contextual Info: BC327 VISHAY PNP EPITAXIAL PLANAR TRANSISTOR /uTE M ir I POWER SEMICONDUCTOR J Features Suitable for AF Driver and Low Power Output Stage Applications Available in Sub-Groups Graded by DC Current Gain 625mW Power Dissipation TO-92 Mechanical Data_

2Sa756

Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA756 DESCRIPTION •High Power Dissipation: PC= 50W Max. @TC=25℃ ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -80V(Min.) APPLICATIONS ·Designed for use in audio amplifier power output stage and

bc327 pnp

Contextual Info: BC327 PNP EPITAXIAL PLANAR TRANSISTOR POWER SEMICONDUCTOR Features • • • Suitable for AF Driver and Low Power Output Stage Applications Available in Sub-Groups Graded by DC Current Gain 625mW Power Dissipation E A B C Mechanical Data • • • •

Contextual Info: Reduction in Power Dissipation of Mos Static Shift Registers by Pulsing Device Supply Rails A pplication Report B97 ar\ Texas Instruments Limited • Manton Lane • Bedford • Phone 0234 67466 • Telex 82178 SUM M ARY This report shows that a reduction in power dissipation of each register to approximately 1/500 of the

2SC898

Abstract: 2SA758
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA758 DESCRIPTION •High Power Dissipation: PC= 80W Max. @TC=25℃ ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -110V(Min.) ·Complement to Type 2SC898 APPLICATIONS ·Designed for use in audio amplifier power output stage and

2sc898

Abstract: hfe1 Audio Output Transistor Amplifier 2SA758 transistor 2sc898
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA758 DESCRIPTION •High Power Dissipation: PC= 80W Max. @TC=25℃ ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -110V(Min.) ·Complement to Type 2SC898 APPLICATIONS ·Designed for use in audio amplifier power output stage and

S-17

Contextual Info: RADIO ¿/T U B E S' SÉ' 0347 POWER AMPLIFIER PENTODE T he ’47 is a power amplifier pentode for use in the audio output stage of a-c receivers. It is capable of giving large power output with a relatively small input signal voltage. In com parison with three-electrode power amplifiers of the same plate dissipation, the

LA3210

Abstract: LA3210 equivalent 405D
Contextual Info: Ordering number : EN 405D Monolithic Linearle Features . Low Noise Use. . Wide automatic level control range. . Good reduced voltage characteristics. Maximum Ratings at Ta=25°C Maximum Supply Voltage Allowable Power Dissipation Current Dissipation in Amplifier

AN-805

Abstract: DS26LS31 DS26LS31CN EIA-422 Calculating Power Dissipation
Contextual Info: INTRODUCTION In many board and system level designs, it is often necessary to determine the total power dissipated by the individual components of that application. This determination of total device power dissipation is important for two reasons. First, it can be used to select the power supply best suited to satisfy the needs of the application. And second, a power dissipation calculation facilitates the analysis of how the board or

OF TRANSISTOR BC337

Abstract: BC337 leads
Contextual Info: BC337 VISHAY NPN EPITAXIAL PLANAR TRANSISTOR / u T E M ir I POWER SEMICONDUCTOR J Features • • • Suitable for AF Driver and Low Power Output Stage Applications Available in Sub-Groups Graded by DC Current Gain 625mW Power Dissipation E J L A TO-92

RCA-47

Abstract: rca tube 47 rca 47
Contextual Info: RCA-47 POWER-AMPLIFIER PENTODE The 47 is a power-amplifier pen­ tode for use in the audio output stage of a-c receivers. In comparison with three-electrode Class A power ampli­ fiers of the same plate dissipation, the 47 is capable of greater output with the additional feature of higher amplification.

IC 7418

Abstract: IC 7418 by national semiconductor 7418 national 2n2222 RF Transistor 2n2222 PNP Transistor 2N2222 equivalent LM195 2N2222 application note emitter follower A-083081-2 tl 2n2222
Contextual Info: INTRODUCTION Overload protection is perhaps most necessary in power circuitry This is shown by recent trends in power transistor technology Safe-area voltage and current handling capability have been increased to limits far in excess of package power dissipation In RF transistors devices are now available and able to withstand badly mismatched loads without

Contextual Info: GaAs MMICs GN01063B GaAs IC with built-in ferroelectric Front-end IC of cellular phone +0.1 10-0.2–0.05 unit: mm 9 8 7 6 Power supply voltage Circuit current Max input power Allowable power dissipation Operating ambient temperature Storage temperature

2N2222 die

Abstract: light activated switch 2N2222 application note emitter follower AN-110 LM105 LM195 2N2222 NPN Transistor features 12v bulb national 2n2222 equivalent component of transistor 2N2222
Contextual Info: INTRODUCTION Overload protection is perhaps most necessary in power circuitry. This is shown by recent trends in power transistor technology. Safe-area, voltage and current handling capability have been increased to limits far in excess of package power dissipation. In RF transistors, devices are now available and able to withstand badly mismatched loads without

2SD1408

Abstract: OF IC 748 ic 748
Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SD1408 POWER AMPLIFIER APPLICATIONS. Unit in mm FEATURES : . High Power Dissipation : Pc=25W Tc=25°C . Good Linearity of hpg . Complementary to 2SB1017 . Recommended for 2 0 ~ 2 5 W High Fidelity Audio Frequency Amplifier Output Stage.