POWER FET LOW VOLTAGE Search Results

pa1556ah

Abstract: PA1501H nec PA1501H PA1556A PA1550H PA1556 PA1522H uPA1712 pa1560h 2sk3326
Contextual Info: NEC Power MOS FET Low Voltage MOS FET Series High Voltage MOS FET Series Semi Power MOS FET MOS FET Array NEC Power MOS FET N7-L Series Low Voltage Power MOS FET Lower On-state Resistance Easier drive by 4V, 4.5V, CMOS Logic IC N5-H Series High Voltage Power MOS FET

C10535E

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC4061 J-FET INPUT LOW-POWER OPERATIONAL AMPLIFIER DESCRIPTION The µPC4061 is a J-FET input low-power operational amplifier featuring low supply voltage operation from ±2 V. Supply current is ten times smaller than µPC4081 type J-FET input op-amp. With very low input bias current

A2293

Contextual Info: 2SK1943-01 FUJI POWER M O S-FET N-CHANNEL SILICON POWER MOS-FET -FAP-IIA SERIES • Features Outline Drawings • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage

mosfet 2sk

Abstract: 2SK724 SC-65 2sk 100a 2sk mosfet
Contextual Info: 2SK724 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-I • Features SERIES ■Outline Drawings • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage ■Applications • Switching regulators

TL061

Abstract: TL061I TL061C TL061IN TL061M TL061A TL061B
Contextual Info: TL061 TL061A - TL061B LOW POWER J-FET SINGLE OPERATIONAL AMPLIFIER . . . . . VERY LOW POWER CONSUMPTION : 200µA WIDE COMMON-MODE UP TO VCC+ AND DIFFERENTIAL VOLTAGE RANGES LOW INPUT BIAS AND OFFSET CURRENTS OUTPUT SHORT-CIRCUIT PROTECTION HIGH INPUT IMPEDANCE J-FET INPUT

a2240

Abstract: tt6090 2SK1663-L A2241 FUJI TTL
Contextual Info: 2SK1663-LS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET • Features ^ SERIES ^ ■ Outline Drawings • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage ■ Applications • Sw itching regulators

pj 899 diode

Abstract: pj 899 2SK899 SC-65 T151 A213
Contextual Info: 2SK899 FUJI POWER MOS FET N-CHANNEL SILICON POWER MOS-FET F-I • Features SERIES lOutline Drawings • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage ■Applications • Switching regulators • UPS

2SK2642-01MR

Contextual Info: 2SK2642-01MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features TO-220F15 High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±35V Guarantee Avalanche-proof 2.54 Applications Switching regulators UPS DC-DC converters

2SK3264

Abstract: 2SK3264-01MR equivalent 2SK3264-01MR 2SK3264 datasheet 2sk3264-01
Contextual Info: 2SK3264-01MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features TO-220F15 High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee Avalanche-proof 2.54 Applications Switching regulators UPS DC-DC converters

GL 40 R

Abstract: SEJ7 p channel mosfet fi F5.5M
Contextual Info: 2SK724 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-I • Features SERIES ■ Outline Drawings • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage ■Applications • Switching regulators

Contextual Info: 2SK903-MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-I SERIES • Outline Drawings ■ Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage ■Applications • Switching regulators

Contextual Info: 2SK1547-01 MR FUJI POWER M O S-FET N-CHANNEL SILICON POWER MOS-FET _ - „ _ F-II SERIES • Features Outline Drawings • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage

2SK2642

Abstract: 2SK2642-01MR
Contextual Info: 2SK2642-01MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features TO-220F15 High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±35V Guarantee Avalanche-proof 2.54 Applications Switching regulators UPS DC-DC converters

2sk mosfet

Abstract: 2SK904
Contextual Info: 2SK904 SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-I SERIES lOutline Drawings • Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage ■Applications • Switching regulators

2sk2642

Contextual Info: 2SK2642-01MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features TO-220F15 High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±35V Guarantee Avalanche-proof 2.54 Applications Switching regulators UPS DC-DC converters

2SK3264

Abstract: 2SK3264-01MR equivalent
Contextual Info: 2SK3264-01MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features TO-220F15 High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee Avalanche-proof 2.54 Applications Switching regulators UPS DC-DC converters

2sk725 equivalent

Abstract: 2SK725 2sk 725 SC-65 T151
Contextual Info: 2SK725 FUJI POWER MOS-FET N CHANNEL SILICON POWER MOS-FET F-I SERIES lOutline Drawings • Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage ■Applications • Switching regulators • UPS

2SK2642

Abstract: 2SK2642-01MR c40400
Contextual Info: 2SK2642-01MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features TO-220F15 High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±35V Guarantee Avalanche-proof 2.54 Applications Switching regulators UPS DC-DC converters

XP134A11A1SR

Contextual Info: XP134A11A1SR Power MOS FET ◆ P-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.11Ω MAX ◆ Ultra High-Speed Switching ◆ SOP-8 Package ◆ Two FET Devices built-in • Applications ■ General Description ■ Features The XP134A11A1SR is a P-Channel Power MOS FET with low on-state

XP133A0245SR

Abstract: PCB405
Contextual Info: XP133A0245SR Power MOS FET ◆ N-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.045Ω MAX ◆ Ultra High-Speed Switching ◆ SOP-8 Package ◆ Two FET Devices built-in • Applications ■ General Description ■ Features The XP133A0245SR is a N-Channel Power MOS FET with low on-state

XP134A01A9SR

Contextual Info: XP134A01A9SR Power MOS FET ◆ P-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.19Ω MAX ◆ Ultra High-Speed Switching ◆ SOP-8 Package ◆ Two FET Devices built-in • Applications ■ General Description ■ Features The XP134A01A9SR is a P-Channel Power MOS FET with low on-state

XP133A1145SR

Contextual Info: XP133A1145SR Power MOS FET ◆ N-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.045Ω MAX ◆ Ultra High-Speed Switching ◆ SOP-8 Package ◆ Two FET Devices built-in • Applications ■ General Description ■ Features The XP133A1145SR is a N-Channel Power MOS FET with low on-state

XP133A0175SR

Contextual Info: XP133A0175SR Power MOS FET ◆ N-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.075Ω MAX ◆ Ultra High-Speed Switching ◆ SOP-8 Package ◆ Two FET Devices built-in • Applications ■ General Description ■ Features The XP133A0175SR is a N-Channel Power MOS FET with low on-state

L 0929

Abstract: s 0934 91564
Contextual Info: HSXAWAVS HWL34YRA L-Band Power GaAs FET Hexawave, Inc. Description Outline Dimensions The HWL34YRA is a Power GaAs FET designed for various L-band & S-band applications. It is presently offered in low cost ceramic package. 1.625 0 .065 Features • Low Cost GaAs Power FET