POWER GCT Search Results

power IGBT MOSFET transistor GTO SCR di

Abstract: MOSFET IGBT THEORY AND APPLICATIONS gto thyristor driver ic Hockey Puck scr 1000a gto Gate Drive circuit gct thyristor 6 thyristor driver circuit GTO thyristor driver MITSUBISHI GATE TURN-OFF THYRISTOR scr powerex snubber capacitor
Contextual Info: New High Power Semiconductors: High Voltage IGBTs and GCTs Eric R. Motto*, M. Yamamoto* * Powerex Inc., Youngwood, Pennsylvania, USA * Mitsubishi Electric, Power Device Division, Fukuoka, Japan Abstract: Ultra high power, high voltage, power electronics is on the verge of a new era. Two new power

Contextual Info: MITSUBISHI SOFT RECOVERY DIODES FD500JV-90DA HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE OUTLINE DRAWING Dimensions in mm * 2.2 ± 0.2DEPTH APPLICATION Clamp diode for GCT Thyristor High-power inverters Power supplies as high frequency rectifiers MAXIMUM RATINGS

FD1500BV-90DA

Abstract: gct thyristor
Contextual Info: MITSUBISHI SOFT RECOVERY DIODES FD1500BV-90DA HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE APPLICATION Free wheel diode for GCT Thyristor High-power inverters Power supplies as high frequency rectifiers MAXIMUM RATINGS P aram eter Voltage class Unit V rrm Repetitive peak reverse voltage

HIGH VOLTAGE DIODE kv

Abstract: freewheeling diodes 12-pulse medium frequency inverter series connection igbt eupec igbt EUPEC Thyristor gct thyristor D1481N D2601N D3001N
Contextual Info: MARKETING NEWS European PowerSemiconductor and Electronics Company Diodes for IGBT and GCT converters 1. Applications Modern high power frequency converters > approx. 1 MW are increasingly realised with IGBT or GCT (Gate Controlled Thyristor) devices. Here, the line side power converter is

design dc link inverter

Abstract: peak hold diesel busbar design peak and hold diesel diesel engine electric circuit PCC capacitor
Contextual Info: TM PCC LP Power Capacitor Chip for Low Power Inverter Applications Product Profile 2000 http://www.epcos.com connected to performance Grid 3 Phase User-Network Power bus switch Power line switch Solar Inverter Wind Battery ~ = = ~ Converter DC-Link PCC LP

reverse-conducting thyristor

Abstract: gto Gate Drive circuit IGCT thyristor IGCT mitsubishi Usha Rectifier Emitter Turn-Off thyristor eto thyristor GTO triac HEXFET Power MOSFET designer manual MOS-Controlled Thyristor
Contextual Info: I Power Electronic Devices 1 Power Electronics Kaushik Rajashekara, Sohail Anwar, Vrej Barkhordarian, Alex Q. Huang Overview • Diodes • Schottky Diodes • Thyristors • Power Bipolar Junction Transistors • MOSFETs • General Power Semiconductor Switch Requirements • Gate

automotive inverter dc link capacitor

Abstract: ISG vehicle solar water pump design dc link inverter PCC HP Converter for HEV EV busbar design GATE TURN-OFF THYRISTOR gto 6 kv PCC capacitor
Contextual Info: TM PCC LP Power Capacitor Chip for Low-Power Inverter Applications Product Profile 2002 http://www.epcos.com connected to performance Grid 3-phase user network Power bus switch Power line switch Solar Inverter Wind Battery ~ = = ~ Converter DC link PCC LP

atmel 832

Abstract: T0905 T0905-TSPH VSWR150 VSWR450
Contextual Info: Features • • • • • • 35 dBm Output Power in CW Mode High Power Added Efficiency PAE Single Supply Operation (No Negative Rail) Simple Analog Power Ramp Control Low Current Consumption in Power-down Mode (Typically ≤15 µA) Small SMD Package (PSSOP28 with Heat Slug)

atmel 830

Abstract: atmel 832 4785a ATMEL 940 VSWR830 PAE750 BUF2
Contextual Info: Features • • • • • • 35 dBm Output Power in CW Mode High Power Added Efficiency PAE Single Supply Operation (No Negative Rail) Simple Analog Power Ramp Control Low Current Consumption in Power-down Mode (Typically ≤15 mA) Small SMD Package (PSSOP28 with Heat Slug)

atmel 832

Abstract: VSWR830 ATMEL 340 ATR0906 I750 SSOP28 VSWR750 PSSOP28
Contextual Info: Features • • • • • • 35 dBm Output Power in CW Mode High Power Added Efficiency PAE Single Supply Operation (No Negative Rail) Simple Analog Power Ramp Control Low Current Consumption in Power-down Mode (Typically ≤15 mA) Small SMD Package (PSSOP28 with Heat Slug)

IN 4751A

Abstract: 4751A atmel 832 T0905 VSWR150 VSWR450 atmel 602
Contextual Info: • • • • • • • Features 35 dBm Output Power in CW Mode High Power Added Efficiency PAE Single Supply Operation (No Negative Rail) Simple Analog Power Ramp Control Low Current Consumption in Power-down Mode (Typically ≤ 15 µA) Small SMD Package (PSSOP28 with Heat Slug)

atmel 832

Abstract: VB326
Contextual Info: • • • • • • • Features 35 dBm Output Power in CW Mode High Power Added Efficiency PAE Single Supply Operation (No Negative Rail) Simple Analog Power Ramp Control Low Current Consumption in Power-down Mode (Typically £ 15 µA) Small SMD Package (PSSOP28 with Heat Slug)

T0905

Abstract: VSWR150 VSWR450 atmel 832
Contextual Info: • • • • • • • Features 35 dBm Output Power in CW Mode High Power Added Efficiency PAE Single Supply Operation (No Negative Rail) Simple Analog Power Ramp Control Low Current Consumption in Power-down Mode (Typically ≤15 µA) Small SMD Package (PSSOP28 with Heat Slug)

Contextual Info: 2.4-2.5 GHz Power Amplifier SST12LP00 Data Sheet SST12LP002.4 GHz Power Amplifier FEATURES: APPLICATIONS: • High Gain: – Typically 28 dB gain across 2.4– 2.5 GHz over temperatures 0– 85°C • High linear output power: – >24 dBm P1dB • High power-added efficiency/low operating current for Bluetooth applications

JEP95

Abstract: SST12LP00 SST12LP00-QV6E
Contextual Info: 2.4-2.5 GHz Power Amplifier SST12LP00 EOL Data Sheet SST12LP002.4 GHz Power Amplifier FEATURES: APPLICATIONS: • High Gain: – Typically 28 dB gain across 2.4– 2.5 GHz over temperatures 0– 85°C • High linear output power: – >24 dBm P1dB • High power-added efficiency/low operating current for Bluetooth applications

JEP95

Abstract: SST12LP00 SST12LP00-QV6E schematic diagram bluetooth dongle
Contextual Info: 2.4-2.5 GHz Power Amplifier SST12LP00 Preliminary Specifications SST12LP002.4 GHz Power Amplifier FEATURES: APPLICATIONS: • High Gain: – Typically 28 dB gain across 2.4– 2.5 GHz over temperatures 0– 85°C • High linear output power: – >24 dBm P1dB

rf power amplifier transistor with s-parameters

Abstract: JEP95 SST12LP00 SST12LP00-QV6E block diagram of a usb bluetooth dongle
Contextual Info: 2.4-2.5 GHz Power Amplifier SST12LP00 Preliminary Specifications SST12LP002.4 GHz Power Amplifier FEATURES: APPLICATIONS: • High Gain: – Typically 28 dB gain across 2.4– 2.5 GHz over temperatures 0– 85°C • High linear output power: – >24 dBm P1dB

RV2 RESISTOR

Abstract: 16PIN CXG1010N
Contextual Info: CXG1010N Power Amplifier for PHS For the availability of this product, please contact the sales office. Description The CXG1010N is a power amplifier for PHS. This IC is designed using the Sony’s GaAs J-FET process and operates at a single power supply.

FS20R06XE3

Abstract: aeg powerblock tt bsm25gp120 b2 thyristor aeg aeg powerblock tt 32 n STR W 6856 DATA SHEET HIGH VOLTAGE ISOLATION DZ 2101 FS450R12KE3 S1 MR 4710 IC aeg powerblock dd
Contextual Info: Power Semiconductors » Short Form Catalog » 2004 A Wide Range In Short Words. An Infineon Technologies Company go to content go to content eupec eupec European Power Semiconductors and Electronics Company – is situated in Warstein and is one of the world’s leading manufacturers of Power Semiconductors

Contextual Info: 2SK2256-01 FUJI POWER MOS-FET N-OHANNEL SILICON POWER MOS-FET FAP-IIA SERIES • features ■ Outline Drawings • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • V,;s= ± 3 0 V Guarantee • Avalanche-proof

2SK2257-01

Abstract: SC-65 2SK2257 nilo 500
Contextual Info: 2SK2257-01 FUJI POWER M OS-FET N-CHANNEL SILICON POWER MOS-FET FAP-IIA SERIES • features Outline Drawings • H g h speed switching • Low on-resistance • N secondary breakdown • Le w driving power • H gh voltage • V ;S = + 30V Guarantee 1 Got«

full bridge igbt induction heating generator

Abstract: transistor x112 WESTCODE catalog 100-12E8 2-IAO-QMC-01001 IGBT ac switch in SSR IGBT D-Series IGCT 4.5kv ixys vuo 52 input id MITA15WB1200TMH
Contextual Info: P R O D U C T S E L E C T O R G U I D E IGBT & Rectifier Modules M A Y 2 0 0 7 Selector Guide incl.: Product Overview Tables Application Overview Technology Overview MiniPack 2 NEW Press-Pack IGBTs POWER DEVICES Power MOSFET Discreets RF Power MOSFETs IGBT Discreets

Diode GFT

Contextual Info: 2SK2257-01 FUJI POWER M O S-FET N-CHANNEL SILICON POWER MOS-FET F A • Features P - I I A S E R I E S Outline Drawings • H gh speed switching • Low on-resistance • N secondary breakdown • Le w driving power • H gh voltage • V,5 = + 30V Guarantee

schematic thyristor based inverter

Abstract: HIGH VOLTAGE DIODE 6kv Thyristor 6kV GTO MODULE mitsubishi inverter fr schematic power GCT Thyristor 6kV 500a gct thyristor GTO thyristor 4500V 4000A DIODE 6kv
Contextual Info: A 6KV/5KA REVERSE CONDUCTING GCT Y. Yamaguchi*, K. Oota*, K. Kurachi*, F. Tokunoh*, H. Yamaguchi*, H. Iwamoto*, J. Donlon*, E. Motto* *Fukuryo Semicon Engineering Corporation, Fukuoka, Japan * Power Device Division, Mitsubishi Electric Corporation, Fukuoka, Japan