POWER GE TRANSISTOR PNP Search Results

transistor p89

Abstract: transistor be p89
Contextual Info: SOT89 PNP SILICON PLANAR M EDIU M POWER HIGH PERFORMANCE TRANSISTOR ISSU E 3 - OCTOBER 1995 PARTMARKING DETAIL - O P89 ABSOLUTE M A X IM U M RATINGS. SY M BO L PARAM ETER C o lle cto r-B a se V o lta ge C olle ctor-E m itter V o lta ge E m itte r-B ase V o lta ge

Contextual Info: 2SA1981SF PNP Silicon Transistor Description PIN Connection • Audio power am plifier applicat ion 3 Features • High h FE : h FE= 100~ 320 • Com plem ent ary pair wit h 2SC5344SF 1 2 Ordering Information Type N O. M a r k in g SOT- 2 3 F Pa ck a ge Code

Contextual Info: STB1017PI PNP Silicon Transistor Features • • • • PIN Connection Low sat urat ion swit ching applicat ion Power am plifier High Volt age : VCEO= - 80V Min. Com plem ent t o STD1408PI 1 2 3 TO-220F-3L Ordering Information Type N O. M a r k in g Pa ck a ge Code

TRANSISTOR a1981

Contextual Info: 2SA1981 PNP Silicon Transistor Description PIN Connection • Audio power am plifier applicat ion E E B B C Features C • High h FE : h FE= 100~ 320 • Com plem ent ary pair wit h 2SC5344 TO-92 Ordering Information Type N O. M a r k ing Pa ck a ge Code 2SA1981

V8060

Contextual Info: 1989963 C E N T R A L S E M I C O N D U C T O R [CENTRAL SEMICONDUCTOR : •' • 92D 00380 T ~ 3 3~ l'ìfi'mH aOQDBfiO D41 El D41E5 D41E7 . IV n U~ir: eCKCK£5 èMtfitì&GEùÈaSigteE1SeC yi fcò'o PNP SILICON POWER TRANSISTOR Central semiconductor Corp.

Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR PROVISIONAL DATASHEET ISSUE 2 - SEPTEMBER 94 FEATURES * 15 V olt V CE0 * G ain of 200 at lc =2 A m p s * V e ry lo w saturation v olta ge ABSOLUTE M A X IM U M RATINGS. PARAM ETER SYM BO L V A LU E U N IT

SE120 TRANSISTOR

Abstract: SE120 ZTX649
Contextual Info: NPN Silicon Planar Medium Power Power Transistor ZTX649 FEATURES • • • • • • 1 .5 W p o w e r d issipation at T an b = 2 5 ° C * 2 A c o n tinu o u s lc Excellent gain ch a ra cte ristics up to 6 A pulsed) Lo w sa tu ra tio n vo lta ge s Fast s w itc h in g

Contextual Info: Philips Semiconductors Product specification PNP power transistor BDP32 FEATURES • S O T223 package. DESCRIPTION P N P p o w e r tra n s is to r in a plastic S O T 2 2 3 p a c k a g e fo r ge n e ra l p u rp o s e , m e d iu m p o w e r a p p lic a tio n s .

lem lta 100p

Abstract: lta 100p 6100B
Contextual Info: SOT89 PNP SILICON PLANAR M ED IU M POWER TRANSISTOR iSSUE 2 - FEBRUARY 1995 O FEATURES * H igh g a in a n d lo w saturation v o lta ge s C O M P LEM EN T A R Y TYPE - BCX68 P A R T M A R K IN G D E T A IL - BCX69 - CJ BCX69T6 CG B C X 6 9 -2 5 -C H ABSOLUTE M A X IM U M RATINGS.

Contextual Info: SOT223 PNP SILICON PLANAR M EDIUM POWER TRANSISTOR ISSUE 3 -A U G U S T 1995 O FEA TU RES * Su ita b le for A F d riv e rs and output sta ge s * H ig h collector current and t o w V rE ,.a!, C O M P L E M E N T A R Y TYPE - BCP5- P A R T M A R K IN G D E T A IL S -

2N2907

Abstract: 935J
Contextual Info: A L LE GR O M I C R O S Y S T E M S INC T3» D • 0 S Ü 4 33 Ô 0 0 0 3 73 1 7 ■ AL6R i PROCESS TQL Process TQL PNP Small-Signal Transistor Process T Q L is a double-diffused P N P silicon epi­ taxial planar device for low-noise, high-gain ampli­ fication, m edium -power sw itching, and ge n e ralpurpose use from dc to UHF. Process T Q L is the

2sb1243 TRANSISTOR

Contextual Info: 2SB1243 Transistor, PNP Features Dimensions Units : mm • available in ATV TV2 package • low collector saturation voltage, typically VCE(sat) = -0.5 V at • complementary pair with 2SD1864 2SB1243 (ATV TV2) lc/lB = -2 A /-0 .2A Applications • medium power amplifier

2sa 102 transistor

Abstract: power ge transistor pnp transistors 2SA
Contextual Info: 2SA1862F5 Transistor, PNP Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: A 1 8 6 2 *0 , where ★ is hFE code and □ is lot number • high breakdown voltage, typically BVceo = —400 V • low collector saturation voltage

mj11011

Contextual Info: MOTOROLA Order this document by MJ11012/D SEMICONDUCTOR TECHNICAL DATA PNP M J11013 High-C urrent Com plem entary Silicon Transistors M J11015 NPN M J11012 . . . for use as output devices in complementary general purpose amplifier applica­ tions. • •

power ge transistor pnp

Abstract: 2SB885 2SD1195
Contextual Info: Inchange Semiconductor Product Specification 2SB885 Silicon PNP Power Transistor DESCRIPTION ・With TO-220C package ・DARLINGTON ・High DC durrent gain ・Low collector saturation voltage ・Complement to type 2SD1195 APPLICATIONS ・For motor drivers,printer hammer

T6753

Abstract: SFE 8 FZT653
Contextual Info: SM-8 COMPLEMENTARY M EDIUM POWER TRANSISTORS ISSUE 1 - JANUARY 1996 LJ_1 Ci FT“ Cl C2cm CiŒj :ij bi to El NPN IX ] b2 |=n e2 pnp PARTMARKING DETAIL - T6753 ABSOLUTE M A X IM U M RATINGS. PARAM ETER SYM BO L N PN PN P U N IT C o lle cto r-B a se V o lta ge

transistor Comparison Tables

Abstract: ZTX950 ZTX796A ZTX951 Zetex 12W Sot23 zetex fzt788b ZETEX ZBD949 fzt788b 1N4148 1N5820
Contextual Info: Application Note 26 Issue 1 April 1996 Fast Charging Batteries with Zetex High Current PNP Transistors and Benchmarq Controller ICs Neil Chadderton Introduction Fast Charge Controller ICs The advances of digital technology and a waiting market have created a huge

592p

Abstract: transistor marking LG
Contextual Info: CentralM CMXT3906 Semiconductor Corp. SURFACE MOUNT DUAL PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMXT3906 type is a dual PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a sur­ face mount package, designed for small signal general

Contextual Info: MP4005 TOSHIBA TOSHIBA POWER TRANSISTOR MODULE SILICON NPN & PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 4 IN 1 M P 4 fl fl ^ HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING. • • • • Small Package by Full Molding (SIP 10 Pin)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Small Signal Transistor Arrays UNA0222 (UN222) Silicon PNP epitaxial planar type (3 elements) Silicon NPN epitaxial planar type (3 elements) Unit: mm For motor drives Unit Collector-base voltage

Contextual Info: SILICON TRANSISTOR 2SA1463 HIGH SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR POWER M INI MOLD D E S C R IP T IO N P A C K A G E D IM E N S IO N S The 2 SA 1 4 6 3 is designed for power amplifier and high speed switching applications. In mMlimttert FEATURES

mj4502

Contextual Info: MOTOROLA Order this document by MJ4502/D SEMICONDUCTOR TECHNICAL DATA M J4502 H igh-Pow er PNP Silicon Transistor . . . for use as an output device in complementary audio amplifiers to 100-W atts music power per channel. • • • 30 AMPERE POWER TRANSISTOR

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistor 2SA1534, 2SA1534A Silicon PNP epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SC3940 and 2SC3940A Unit: mm 4.0±0.2 M Di ain sc te

Contextual Info: Small Signal Transistor Arrays UNA0228 UN228 Silicon PNP epitaxial planar type (2 elements) Silicon NPN epitaxial planar type (2 elements) Unit: mm For motor drives 0.2+0.1 –0.0 0.4±0.1 9 8 7 6 Parameter Symbol Rating Unit VCBO −12 V Collector-emitter voltage