POWER MOS SELECTION Search Results

pa1556ah

Abstract: PA1501H nec PA1501H PA1556A PA1550H PA1556 PA1522H uPA1712 pa1560h 2sk3326
Contextual Info: NEC Power MOS FET Low Voltage MOS FET Series High Voltage MOS FET Series Semi Power MOS FET MOS FET Array NEC Power MOS FET N7-L Series Low Voltage Power MOS FET Lower On-state Resistance Easier drive by 4V, 4.5V, CMOS Logic IC N5-H Series High Voltage Power MOS FET

C10535E

Abstract: C10943X MEI-1202 PA1701 TEA-1035 UPA1701 1037 u
Contextual Info: DATA SHEET MOS Field Effect Power Transistors µPA1701 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS This product is N-Channel MOS Field Effect Transistor in millimeter designed for power management applications of note

Contextual Info: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS _ ¿¿PA1702 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS This product is N-Channel MOS Field Effect in: millimeter Transistor designed for DC/DC converters and power

C10535E

Abstract: C10943X MEI-1202 PA1710 G1088
Contextual Info: DATA SHEET MOS Field Effect Power Transistors µPA1710 SWITCHING P-CHANNEL POWER MOS FFT INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS This product is P-Channel MOS Field Effect Transistor in millimeter designed for DC/DC converter and power management 8

C10535E

Abstract: C10943X MEI-1202 PA1702 TEA-1035
Contextual Info: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS µPA1702 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS This product is N-Channel MOS Field Effect in: millimeter Transistor designed for DC/DC converters and power 8 management applications of notebook computers.

A1701

Abstract: nec 701 NEC 710
Contextual Info: DATA SHEET MOS Field Effect Power Transistors _ ¿¿PA1701 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIM ENSIONS This product is N-Channel MOS Field Effect Transistor in m illim eter designed for power managem ent applications of note

C10535E

Abstract: C10943X MEI-1202 PA1751 TEA-1035
Contextual Info: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS µPA1751 SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS This product is Dual N-Channel MOS Field Ef- in: millimeter fect Transistor designed for power management application of notebook computers, and Li-ion bat-

IEI-1213

Abstract: MEI-1202 MF-1134 PA1700 uPA1700
Contextual Info: DATA SHEET MOS FIELD EFFECT POWER TRANSISTOR µPA1700 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS This product is N-Channel MOS Field Effect Tran- in millimeter sistor designed for DC/DC converter and power management applications of note book computers.

C10535E

Abstract: C10943X MEI-1202 PA1752 TEA-1035
Contextual Info: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS µPA1752 SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS This product is Dual N-Channel MOS Field Ef- in: millimeter fect Transistor designed for power management application of notebook computers, and Li-ion bat-

C10535E

Abstract: C10943X C11531E MEI-1202 PA1753 TEA-1035
Contextual Info: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS µPA1753 SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS This product is Dual N-Channel MOS Field Ef- in: millimeter fect Transistor designed for power management application of notebook computers, and Li-ion bat-

a1037

Abstract: uA753
Contextual Info: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS ¿¿PA! 753 SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in: m illim eter This product is Dual N-Channel MOS Field Ef­ fect T ransistor designed for power m anagem ent

2sk2139

Abstract: IEI-1213 MEI-1202 MF-1134 MP-45F
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2139 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2139 is N-Channel Power MOS Field Effect Transistor in millimeters designed for high voltage switching applications. 10.0±0.3

2SK2724

Abstract: C10535E C10943X MEI-1202
Contextual Info: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SK2724 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in millimeter This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. 10.0 ±0.3

Contextual Info: DATA SHEET MOS FIELD EFFECT POWER TRANSISTOR _j u P A 1 7 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS This product is N-Channel MOS Field Effect T ran­ in millimeter sistor designed for DC/DC converter and power man­

2SK2275

Abstract: IEI-1213 MEI-1202 MF-1134 DIODE 8069
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2275 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2275 is N-channel Power MOS Field Effect Transis- in millimeters tor designed for high voltage switching applications. 10.0 ± 0.3

transistor 9567

Abstract: transistor J128 philips catalog potentiometer 72741 MDA480 MOS marking 843 D 843 Power Transistor MDA483 transistor K 1413
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLF521 UHF power MOS transistor Product specification November 1992 Philips Semiconductors Product specification UHF power MOS transistor FEATURES BLF521 PIN CONFIGURATION • High power gain • Easy power control ook, halfpage

2SK2341

Abstract: TEA 1090 IEI-1213 MEI-1202 MF-1134
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2341 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2341 is N-channel Power MOS Field Effect Transis- in millimeters tor designed for high voltage switching applications. 10.0 ± 0.3

2SK2140

Abstract: 2SK2140-Z IEI-1213 MP-25 MP-25Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2140, 2SK2140-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2140, 2SK2140-Z is N-channel Power MOS Field Effect in millimeters • Low On-state Resistance 3.6 ± 0.2 4 6.0 MAX.

transistor d 1710

Abstract: A1710
Contextual Info: DATA SHEET MOS Field Effect Power Transistors nPA1710 SWITCHING P-CHANNEL POWER MOS F FT INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS This product is P-Channel MOS Field Effect T ransistor in m illim eter designed for DC/DC converter and pow er m anagem ent

C10535E

Abstract: C10943X MEI-1202 TEA-1035 UPA1750
Contextual Info: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS ¿¡PA1750 SWITCHING DUAL P-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DIMENSIONS DESCRIPTION in m illim eter This product is Dual P-Channel MOS Field Effect T ransistor designed for pow er m anagem ent switch

2SK2138

Abstract: 2SK2138-Z IEI-1213 MP-25 MP-25Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2138, 2SK2138-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2138, 2SK2138-Z is N-channel Power MOS Field Effect in millimeters • Low On-state Resistance 3.6 ± 0.2 4 6.0 MAX.

A1035T

Contextual Info: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS ¿¿PA! 751 SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in: millimeter This product is Dual N-Channel MOS Field Ef­ fect Transistor designed for power m anagem ent application of notebook com puters, and Li-ion bat­

transistor ba 752

Contextual Info: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS ¿¿PA! 752 SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in: millimeter This product is Dual N-Channel MOS Field Ef­ fect Transistor designed for power m anagem ent application of notebook com puters, and Li-ion ba t­

Contextual Info: < Silicon RF Power MOS FET Discrete > RD10MMS2 RoHS Compliance, Silicon MOSFET Power Transistor,870MHz,10W OUTLINEDRAWING DESCRIPTION RD10MMS2 RoHS-compliant product is a MOS FET type transistor specifically designed for 870MHz RF power amplifiers applications.