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    POWER MOSFET, P, TOSHIBA Search Results

    POWER MOSFET, P, TOSHIBA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
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    POWER MOSFET, P, TOSHIBA Price and Stock

    TE Connectivity TL1220R3BBBRG-POWER

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    TE Connectivity TL1220R1BBBG-POWER

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    Panduit Corp POWER-60W

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    TE Connectivity TL1220R2BBBOG-POWER

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    Thomas & Betts POWER-TOOL

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    POWER MOSFET, P, TOSHIBA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SSM6E03TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type + N-Channel MOS Type SSM6E03TU Power Management Switch Applications Unit: mm • P-channel MOSFET and 1.8 V drive • N-channel MOSFET and 1.5 V drive • P-channel MOSFET and N-channel MOSFET incorporated into one


    Original     		PDF SSM6E03TU

    Untitled

    Abstract: No abstract text available
    Text: SSM6E01TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type U-MOS II + N-Channel MOS Type (Planer) SSM6E01TU Load Switch Applications • P-channel MOSFET and N-channel MOSFET incorporated into one package. • Low power dissipation due to P-channel MOSFET that features low


    Original     		PDF SSM6E01TU

    SSM6E01TU

    Abstract: HIGH POWER MOSFET TOSHIBA
    Text: SSM6E01TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type U-MOS II + N-Channel MOS Type (Planer) SSM6E01TU Load Switch Applications • P-channel MOSFET and N-channel MOSFET incorporated into one package. • Low power dissipation due to P-channel MOSFET that features low


    Original     		PDF SSM6E01TU SSM6E01TU HIGH POWER MOSFET TOSHIBA

    KTA 3-25

    Abstract: SSM6E01TU SSM6E
    Text: SSM6E01TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type U-MOS II + N-Channel MOS Type (Planer) SSM6E01TU Load Switch Applications Unit: mm • P-channel MOSFET and N-channel MOSFET incorporated into one package. · Low power dissipation due to P-channel MOSFET that features low


    Original     		PDF SSM6E01TU KTA 3-25 SSM6E01TU SSM6E

    Untitled

    Abstract: No abstract text available
    Text: SSM6E01TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type U-MOS II + N-Channel MOS Type (Planer) SSM6E01TU Load Switch Applications Unit: mm • P-channel MOSFET and N-channel MOSFET incorporated into one package. • Low power dissipation due to P-channel MOSFET that features low


    Original     		PDF SSM6E01TU

    Untitled

    Abstract: No abstract text available
    Text: SSM6E01TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type U-MOS II + N-Channel MOS Type (Planer) SSM6E01TU Load Switch Applications Unit: mm • P-channel MOSFET and N-channel MOSFET incorporated into one package. • Low power dissipation due to P-channel MOSFET that features low


    Original     		PDF SSM6E01TU

    Untitled

    Abstract: No abstract text available
    Text: SSM6E03TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type + N-Channel MOS Type SSM6E03TU ○Power Management Switch Applications Unit: mm • 1.8 V drive P-channel MOSFET and 1.5 V drive N-channel MOSFET incorporated into one package. • Low power dissipation due to P-channel MOSFET that features low


    Original     		PDF SSM6E03TU

    Untitled

    Abstract: No abstract text available
    Text: SSM6E03TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type + N-Channel MOS Type SSM6E03TU • 1.8 V driveP-channel MOSFET and 1.5 V driveN-channel MOSFET incorporated into one package. 2.1±0.1 • Low power dissipation due to P-channel MOSFET that features low


    Original     		PDF SSM6E03TU

    Untitled

    Abstract: No abstract text available
    Text: SSM6E03TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type + N-Channel MOS Type SSM6E03TU • 1.8 V driveP-channel MOSFET and 1.5 V driveN-channel MOSFET incorporated into one package. 2.1±0.1 • Low power dissipation due to P-channel MOSFET that features low


    Original     		PDF SSM6E03TU

    Untitled

    Abstract: No abstract text available
    Text: SSM6E02TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type + N-Channel MOS Type SSM6E02TU 2.1±0.1 package. 1.7±0.1 Low power dissipation due to P-channel MOSFET that features low Pb free Characteristics Symbol Rating Unit Drain-Source voltage VDS −20


    Original     		PDF SSM6E02TU

    Untitled

    Abstract: No abstract text available
    Text: SSM6E02TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type + N-Channel MOS Type SSM6E02TU 2.1±0.1 package. 1.7±0.1 Low power dissipation due to P-channel MOSFET that features low Pb free Characteristics Symbol Rating Unit Drain-Source voltage VDS −20


    Original     		PDF SSM6E02TU

    Untitled

    Abstract: No abstract text available
    Text: SSM6G18NU Silicon P Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode SSM6G18NU Power Management Switch Applications • Combined a P-channel MOSFET and a Schottky barrier diode in one package. • Low RDS ON and Low VF RDS(ON) = 261 mΩ (max) (@VGS = -1.5V)


    Original     		PDF SSM6G18NU

    uDFN-6

    Abstract: No abstract text available
    Text: SSM6G18NU Silicon P Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode SSM6G18NU Power Management Switch Applications • Combined a P-channel MOSFET and a schottky barrier diode in one package. • Low RDS ON and Low VF RDS(ON) = 261 mΩ (max) (@VGS = -1.5V)


    Original     		PDF SSM6G18NU uDFN-6

    Untitled

    Abstract: No abstract text available
    Text: SSM6G18NU Silicon P Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode SSM6G18NU Power Management Switch Applications • Combined a P-channel MOSFET and a schottky barrier diode in one package. • Low RDS ON and Low VF RDS(ON) = 261 m (max) (@VGS = -1.5V)


    Original     		PDF SSM6G18NU 150led

    XC6377

    Abstract: XC6377A503SR XC6377A303SR XC6376A333
    Text: XC6376/77 Series PWM Controlled, PWM/PFM Switchable Step-down DC/DC Converters ◆ P Channel Power MOSFET Built-in ◆ Maximum Output Current: 500mA ◆ Output Voltage Range: 1.5~6.0V ◆ Oscillator Frequency: 300kHz ◆ Maximum Duty Ratio: 100% ◆ High Efficiency: 95%


    Original     		PDF XC6376/77 500mA 300kHz 500mA XC6377A333 IOUT10mA300mA 300mA IOUT300mA10mA XC6377 XC6377A503SR XC6377A303SR XC6376A333

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TPD1031F TOSHIBA INTELLIGENT POWER DEVICE SILICON MONOLITHIC POWER MOS INTEGRATED CIRCUIT T P D 1 031 F LOW-SIDE POWER SWITCH FOR MOTORS, SOLENOIDS, AND LAMP DRIVERS TPD1031F is a monolithic power IC for low-side switches. The TPD1031F has a vertical MOSFET output with logic


    OCR Scan     		PDF TPD1031F TPD1031F TheTPD1031F

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TPD1031F TOSHIBA INTELLIGENT POWER DEVICE SILICON MONOLITHIC POWER MOS INTEGRATED CIRCUIT T P D 1 031 F LOW-SIDE POWER SWITCH FOR MOTORS, SOLENOIDS, AND LAMP DRIVERS TPD1031F is a monolithic power IC for low-side switches. The TPD1031F has a vertical MOSFET output with logic


    OCR Scan     		PDF TPD1031F TPD1031F TheTPD1031F

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TPD1031F TENTATIVE TOSHIBA INTELLIGENT POWER DEVICE SILICON MONOLITHIC POWER MOS INTEGRATED CIRCUIT T P D 1 031 F LOW-SIDE POWER SWITCH FOR MOTORS, SOLENOIDS, AND LAMP DRIVERS TPD1031F is a monolithic power IC for low-side switches. The TPD1031F has a vertical MOSFET output with logic


    OCR Scan     		PDF TPD1031F TPD1031F TheTPD1031F

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SK3074 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3074 RF POWER MOSFET FOR VHF- AND UHF-BAND POWER AMPLIFIER • • • Output Power Power Gain Drain Efficiency PO=630m W G p^ 14.9dB 7d ^45 % MAXIMUM RATINGS Ta = 25°C SYMBOL RATING


    OCR Scan     		PDF 2SK3074 961001EAA1 2200pF 2200pF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TPD1028BS TOSHIBA INTELLIGENT POWER DEVICE SILICON MONOLITHIC POWER MOS IC TPD1028BS LOW -SIDE SW ITCH FOR M O TOR, SO LEN O ID A N D LAM P DRIVE TPD1028BS is a monolithic power IC for low-side switch. The IC has a vertical MOSFET output which can be directly


    OCR Scan     		PDF TPD1028BS TPD1028BS

    2SK3074

    Abstract: No abstract text available
    Text: TO SHIBA 2SK3074 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3074 RF PO W ER MOSFET FOR VHF- AND UHF-BAND PO W ER AM PLIFIER • • • Output Power Power Gain Drain Efficiency P q = 630mW Gp^ 14.9dB 7j ^45 % M A X IM U M RATINGS Ta = 25°C)


    OCR Scan     		PDF 2SK3074 630mW 2200pF 520MHz 2SK3074

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK3075 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3075 Unit in mm RF PO W ER MOSFET FOR VHF- AND UHF-BAND PO W ER AM PLIFIER Output Power Power Gain Drain Efficiency P O = 7 -5 W GP= 11.7dB 7d ^ 5 0 % M A X IM U M RATINGS Ta = 25°C


    OCR Scan     		PDF 2SK3075 961001EAA1 2200pF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A TENTATIVE TPD1030F TOSHIBA INTELLIGENT POWER DEVICE SILICON POWER MOS IC MODULE TPD1030F 2-IN-1 LOW -SIDE SW ITCH M O D U LE FOR M O TOR, SO LEN O ID A N D LA M P DRIVE TPD1030F is a 2-IN-1 power switch module for low-side switch. The IC has a vertical MOSFET output which can be directly


    OCR Scan     		PDF TPD1030F TPD1030F 000mm2 OP8-P-225-1

    toshiba 2505 dd

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE TPD1028AS TOSHIBA INTELLIGENT PO W ER DEVICE SILICON MONOLITHIC PO W ER MOS IC TPD1028AS LOW -SIDE SWITCH FOR M O TO R , SOLENOID A N D LAM P DRIVE TPD1028AS is a monolithic power IC for low-side switch. The IC has a vertical MOSFET output which can be directly


    OCR Scan     		PDF TPD1028AS TPD1028AS toshiba 2505 dd