POWER MOSFET 350V TO 247 Search Results

C528 transistors

Abstract: C528 DIODE
Contextual Info: INTERNATIONAL RECTIFIER 11E D | 4ÖSS4SS 0000774 Data Sheet No. PD-9.445A INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER N-CHAIMNEL POWER MOSFETs TO-247AC PACKAGE 400 Volt, 0.30 Ohm HEXFET TO-247AC TO-3P Plastic Package R IRFP350 IRFP351 IRFP35S IRFP353

PLCC-6 5050

Abstract: P-Channel mosfet 400v to220 pj 84 elmwood 2450 MOSFET 400V depletion p channel 240v n-channel depletion mosfet mosfet driver 400v ks 4290 P-Channel Depletion-Mode HT0440LG
Contextual Info: WEB SITE/OEM PRICE LIST OCTOBER 15, 1999 Supersedes September 1998 Web Site/OEM Price List High Voltage ICs, MOSFETs and Arrays 1 SUPERTEX, INC. TERMS OF SALE information and assistance at the Buyer's expense for the defense of same, and the Buyer shall pay all damages and costs awarded therein against the Seller. In case

power mosfet 350v 30a to 247

Contextual Info: Power MOSFET IXKK85N60C CoolMOSTM Superjunction MOSFET VDSS ID25 RDS on D Low RDS(on), High Voltage = = ≤ 600V 85A Ω 36mΩ G S TO-264 G D S Symbol Test Conditions VDSS TJ = 25°C Maximum Ratings 600 V VGSS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C

47N60C

Abstract: 47n60 power mosfet 350v 30a to 247 UPS SIEMENS E72873 ID100
Contextual Info: IXKH 47N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 47 A RDS on) max = 70 mΩ Low RDSon, high VDSS Superjunction MOSFET D TO-247 G G q D E72873 Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS ID25 ID100 TC = 25°C TC = 100°C

47N60C

Contextual Info: IXKH 47N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 47 A RDS on) max = 70 m Low RDSon, high VDSS Superjunction MOSFET D TO-247 G G fl D E72873 Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS ID25 ID100 TC = 25°C TC = 100°C

apt47n60

Abstract: TRANSISTORS 132 GD
Contextual Info: APT47N60BC3 APT47N60SC3 600V 47A 0.070Ω Super Junction MOSFET D3PAK COOLMOS TO-247 Power Semiconductors • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • TO-247 or Surface Mount D3PAK Package D

Contextual Info: APT17N80BC3 800V 17A 0.290Ω Super Junction MOSFET COOLMOS TO-247 Power Semiconductors • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • TO-247 Package D G S MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified.

Contextual Info: APT11N80BC3 800V 11A 0.450Ω Super Junction MOSFET COOLMOS TO-247 Power Semiconductors • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • TO-247 Package D G S MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified.

DD2030

Abstract: 650V power mosfet 350v 30a to 247
Contextual Info: APT47N65BC3 600V 47A 0.070Ω Super Junction MOSFET TO COOLMOS -24 7 Power Semiconductors D3 • Ultra low RDS ON • Increased Power Dissipation • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • TO-247 or Surface Mount D3PAK Package

Contextual Info: APT47N65BC3 650V 47A 0.070 Super Junction MOSFET TO -24 7 • Ultra low RDS ON • Increased Power Dissipation • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • TO-247 or Surface Mount D3PAK Package All Ratings: TC = 25°C unless otherwise specified.

Contextual Info: APT17N80BC3 APT17N80SC3 0.290Ω 800V 17A Super Junction MOSFET COOLMOS D3PAK TO-247 Power Semiconductors • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • TO-247 or Surface Mount D3PAK Package D

Contextual Info: APT47N65BC3 650V 47A 0.070Ω Super Junction MOSFET TO -24 7 • Ultra low RDS ON • Increased Power Dissipation • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • TO-247 or Surface Mount D3PAK Package All Ratings: TC = 25°C unless otherwise specified.

Contextual Info: APT47N60BC3 G APT47N60SC3(G) 600V 47A 0.070 TO Super Junction MOSFET -24 7 D 3 PAK • Ultra Low RDS(ON) • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated D • Extreme dv/dt Rated • Popular TO-247 or Surface Mount D3 package.

APT47N60BC3

Abstract: APT47N60SC3
Contextual Info: APT47N60BC3 APT47N60SC3 600V 47A 0.070Ω Super Junction MOSFET D3PAK TO-247 COOLMOS Power Semiconductors • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • TO-247 or Surface Mount D3PAK Package MAXIMUM RATINGS

complementary MOSFET 2sk

Abstract: transistor+2sk 2SK series 2SK 20a 600v 2sk 1181 2SK 150A 2SK+series
Contextual Info: SHINDENGEN Power MOSFET HVX-2 series Shindengen Electric Mfg.Co.,Ltd. Tokyo, Japan. 021^307 □□□2330 Tflû SHINDENGEN Power MOSFET Products and Their Applications s. VDSS V Input 60 150 DC12V DC24V 180 200 230 250 350 300 500 600 700 900 DC48V to 72V

Contextual Info: APT47N65BC3 APT47N65SC3 650V 47A 0.070Ω Super Junction MOSFET COOL MOS Po we r Se miconduc tors • Ultra low RDS ON • Increased Power Dissipation • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • TO-247 or Surface Mount D3PAK Package

STW9NC70Z

Contextual Info: STW9NC70Z N-CHANNEL 700V - 0.90 Ω - 7.5A TO-247 Zener-Protected PowerMESH III MOSFET TYPE STW9NC70Z • ■ ■ ■ ■ VDSS RDS on ID 700 V < 1.2 Ω 7.5A TYPICAL RDS(on) = 0.9 Ω EXTREMELY HIGH dv/dt CAPABILITY GATETO-SOURCE ZENER DIODES 100% AVALANCHE TESTED

power mosfet 350v 35a to 247

Abstract: STW8NC70Z
Contextual Info: STW8NC70Z N-CHANNEL 700V - 1.1 Ω - 7A TO-247 Zener-Protected PowerMESH III MOSFET TYPE STW8NC70Z • ■ ■ ■ ■ VDSS RDS on ID 700 V < 1.38 Ω 7A TYPICAL RDS(on) = 1.1 Ω EXTREMELY HIGH dv/dt CAPABILITY GATETO-SOURCE ZENER DIODES 100% AVALANCHE TESTED

STW8NC70Z

Abstract: power mosfet 350v to 247
Contextual Info: STW8NC70Z N-CHANNEL 700V - 1.1 Ω - 7A TO-247 Zener-Protected PowerMESH III MOSFET TYPE STW8NC70Z • ■ ■ ■ ■ VDSS RDS on ID 700 V < 1.38 Ω 7A TYPICAL RDS(on) = 1.1 Ω EXTREMELY HIGH dv/dt CAPABILITY GATETO-SOURCE ZENER DIODES 100% AVALANCHE TESTED

STW9NC70Z

Abstract: TL 078
Contextual Info: STW9NC70Z N-CHANNEL 700V - 0.90 Ω - 7.5A TO-247 Zener-Protected PowerMESH III MOSFET TYPE STW9NC70Z • ■ ■ ■ ■ VDSS RDS on ID 700 V < 1.2 Ω 7.5A TYPICAL RDS(on) = 0.9 Ω EXTREMELY HIGH dv/dt CAPABILITY GATETO-SOURCE ZENER DIODES 100% AVALANCHE TESTED

Diode zener 3a

Abstract: STW10NC70Z
Contextual Info: STW10NC70Z N-CHANNEL 700V - 0.6 Ω - 10.6A TO-247 Zener-Protected PowerMESH III MOSFET PRELIMINARY DATA TYPE STW10NC70Z • ■ ■ ■ ■ VDSS RDS on ID 700 V < 0.75 Ω 10.6 A TYPICAL RDS(on) = 0.6 Ω EXTREMELY HIGH dv/dt CAPABILITY GATETO-SOURCE ZENER DIODES

STW10NC70Z

Contextual Info: STW10NC70Z N-CHANNEL 700V - 0.58 Ω - 10.6A TO-247 Zener-Protected PowerMESH III MOSFET TYPE STW10NC70Z • ■ ■ ■ ■ VDSS RDS on ID 700 V < 0.75 Ω 10.6 A TYPICAL RDS(on) = 0.58 Ω EXTREMELY HIGH dv/dt CAPABILITY GATETO-SOURCE ZENER DIODES 100% AVALANCHE TESTED

94n60

Abstract: IXKK94N60C3 94N60C3 UPS SIEMENS ID100
Contextual Info: ADVANCE TECHNICAL INFORMATION Power MOSFET IXKK 94N60C3 VDSS = 600 V ID25 = 94 A Ω RDS on = 35 mΩ Low RDS(on), High Voltage, Superjunction MOSFET Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VGS Continuous ±20 V ID25 TC = 25°C; Note 1

85N60C

Abstract: CoolMOS Power Transistor ID100 UPS SIEMENS
Contextual Info: ADVANCE TECHNICAL INFORMATION Power MOSFET IXKK 85N60C VDSS = 600 V = 85 A ID25 Ω RDS on = 36 mΩ Low RDS(on), High Voltage, CoolMOSTM Superjunction MOSFET Symbol Test Conditions Maximum Ratings TO-264 VDSS TJ = 25°C to 150°C 600 V VGS Continuous ±20