POWER MOSFET 600V 29A Search Results

TO-274

Abstract: IRFPS29N60L IRFPS37N50A
Contextual Info: PD - 94622 SMPS MOSFET IRFPS29N60L HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS VDSS RDS on typ. Trr typ. ID • Telecom and Server Power Supplies • Uninterruptible Power Supplies 175mΩ 600V 130ns 29A • Motor Control applications

ISD 1820

Abstract: IRF 544 IRF 547 MOSFET MOSFET IRF 630 Datasheet IRFPS29N60L IRFPS37N50A
Contextual Info: PD - 94622A SMPS MOSFET IRFPS29N60L HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS VDSS RDS on typ. Trr typ. ID • Telecom and Server Power Supplies • Uninterruptible Power Supplies 175mΩ 600V 130ns 29A • Motor Control applications

ISD 1820

Abstract: power mosfet 600v 29a IRFPS29N60L IRFPS37N50A
Contextual Info: PD - 94622A SMPS MOSFET IRFPS29N60L HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS VDSS RDS on typ. Trr typ. ID • Telecom and Server Power Supplies • Uninterruptible Power Supplies 175mΩ 600V 130ns 29A • Motor Control applications

APT-6021

Abstract: APT6021BLL APT6021SLL max3470
Contextual Info: APT6021BLL APT6021SLL 600V 29A 0.210Ω R POWER MOS 7 MOSFET BLL D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

Contextual Info: APT6021BLL APT6021SLL 600V 29A 0.210Ω POWER MOS 7 R MOSFET BLL D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

Contextual Info: APT6021BLL APT6021SLL 600V 29A 0.210Ω R POWER MOS 7 MOSFET BLL D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

power mosfet 600v 29a

Contextual Info: APT60M75JLL 600V 58A 0.075Ω POWER MOS 7 R MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

Contextual Info: APT60M75JLL 600V 58A 0.075Ω POWER MOS 7 R MOSFET S S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

Contextual Info: APT60M75JLL 600V 58A 0.075Ω POWER MOS 7 R MOSFET S S 27 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

2kW flyback PFC

Abstract: transistor SMD DK -RN SMPS flyback 2kW UPS SIEMENS UMAX 450W SMPS smps 450W 2kw mosfet PFC 5kw P-CHANNEL 25A TO-247 POWER MOSFET siemens soft starter
Contextual Info: Semiconductor Group – find us at an office near you AUS Siemens Ltd., Head Office 544 Church Street Richmond Melbourne , Vic. 3121 ట (+61) 3-9420 7111 Fax (+61) 3-9420 72 75 Email: mark.walsh@siemens.com.au D Siemens AG Von-der-Tann-Straße 30 D-90439 Nürnberg

Contextual Info: APT28M120B2 APT28M120L 1200V, 29A, 0.53Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

APT28M120B2

Abstract: APT28M120L MIC4452
Contextual Info: APT28M120B2 APT28M120L 1200V, 29A, 0.53Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

Contextual Info: APT28M120B2 APT28M120L 1200V, 29A, 0.53Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

220VAC DC transformerless power supply

Abstract: DN2540 equivalent PN2907 equivalent 220VAC DC transformerless power supply 3A capacitor wima mks 4 0.1uF GI BYV26C 350mA 220vac driver wima m2 MKS wima micrometals t60-2
Contextual Info: HV9906DB7 HV9906DB7 20W 220VAC Off-Line PFC Current Source Controller Introduction Features The Supertex HV9906DB7 demo board is a power factor corrected PFC LED driver using the HV9906 IC. The power conversion topology comprises an input buck-boost stage with an integrated energy

ISD 1820 P

Abstract: IRFPS37N50A ISD 1820
Contextual Info: PD - 95907 SMPS MOSFET IRFPS29N60LPbF HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS • Telecom and Server Power Supplies • Uninterruptible Power Supplies • Motor Control applications • Lead-Free VDSS RDS on typ. Trr typ. ID 175mΩ

ir2111 application note

Abstract: IR2111 APPLICATIONS IR2111 application IR2111 IRFPC50 IR2111S IRFBC20 IRFBC30 IRFBC40 MS-012AA
Contextual Info: Data Sheet No. PD60028-L IR2111 S HALF-BRIDGE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V

IR2111

Contextual Info: Data Sheet No. PD60028-M IR2111 S & (PbF) HALF-BRIDGE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • • Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V

IR2111 APPLICATIONS

Abstract: application IR2111 ir2111 application note IR2111 IR2111S IRFBC20 IRFBC30 IRFBC40 IRFPC50 MS-012AA
Contextual Info: Data Sheet No. PD60028-K IR2111 HALF-BRIDGE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V

ir2111

Abstract: Gate Driver application IR2111 IR2111 APPLICATIONS ir2111 application note IR2111 "pin compatible" ir2111pbf IR2111S P channel 600v 30a IGBT IRFPC50
Contextual Info: Data Sheet No. PD60028-M IR2111 S & (PbF) HALF-BRIDGE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • • Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V

Contextual Info: PD - 95907 SMPS MOSFET IRFPS29N60LPbF HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS • Telecom and Server Power Supplies • Uninterruptible Power Supplies • Motor Control applications • Lead-Free VDSS RDS on typ. Trr typ. ID 175mΩ

ISD 1820

Abstract: power mosfet 600v 29a ISD 1820 P IRFPS37N50A
Contextual Info: PD - 95907 SMPS MOSFET IRFPS29N60LPbF HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS • Telecom and Server Power Supplies • Uninterruptible Power Supplies • Motor Control applications • Lead-Free VDSS RDS on typ. Trr typ. ID 175mΩ

IR2127

Abstract: ir21281 PD60143K
Contextual Info: Data Sheet No. PD60143K IR2127/IR2128 IR21271/IR21281 CURRENT SENSING SINGLE CHANNEL DRIVER Features Product Summary • Floating channel designed for bootstrap operation • Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Application- specific gate drive range:

IR2127

Abstract: IR21271 IR2128 IR2128S MS-012AA
Contextual Info: Data Sheet No. PD60143-M IR2127 S / IR2128(S) IR21271(S) CURRENT SENSING SINGLE CHANNEL DRIVER Features • Floating channel designed for bootstrap operation • • • • • • Fully operational to +600V Tolerant to negative transient voltage dV/dt immune

IR21271

Abstract: IR2127 12A, 600V Current Sensing N-Channel IGBT IR2128 IR2128S MS-012AA AX300
Contextual Info: Data Sheet No. PD60143-L IR2127/IR2128 IR21271 CURRENT SENSING SINGLE CHANNEL DRIVER Features • Floating channel designed for bootstrap operation • Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Application- specific gate drive range: