POWER MOSFET 6N60 Search Results

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 6N60 Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 6N60Z Preliminary Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 6N60Z is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged

6N60Z

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 6N60Z Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N60Z is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 6N60 Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high

6n60c

Abstract: mosfet 6n60c 6n60
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 6N60-C Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N60-C is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 6N60 Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 6N60K-MT Preliminary Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N60K-MT is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 6N60 Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET 1 1 TO-220F TO-220 „ DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 6N60 Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET 1 1 TO-220F TO-220  DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 6N60-P Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET 1 1 TO-220F TO-220  DESCRIPTION The UTC 6N60-P is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high

6n60 data

Abstract: UTC6N60 6N60L TO-220F
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 6N60 Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET 1 1 TO-220 TO-251 „ DESCRIPTION The UTC 6N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

Contextual Info: UNISONICTECHNOLOGIESCO., LTD 6N60Z Power MOSFET 6 .2 A, 6 0 0 V N -CH AN N EL POWER M OSFET  DESCRI PT I ON The UTC 6N60Z is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged

6N-60

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 6N60 Power MOSFET 6.2 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 6N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

6n60a

Abstract: 6n60b 6N60-B 6n60 6N60-A MOSFET 6n60 DSA0025594 6n60 MOSFEt 6n60 data power mosfet 6n60
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 6N60 Power MOSFET 6.2 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 6N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

6n60a

Abstract: 6n60b 6n60l 6n60 6N60G 6n60 data 6N60-B 6N60L TO-220F 6N60L TO-251
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 6N60 Power MOSFET 6.2 Amps, 600/650 Volts N-CHANNEL MOSFET 1 1 TO-220 TO-251 „ DESCRIPTION The UTC 6N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

Contextual Info: STB6N60M2, STD6N60M2 N-channel 600 V, 1.06 Ω typ., 4.5 A MDmesh II Plus low Qg Power MOSFET in D2PAK and DPAK packages Datasheet - production data Features Order codes TAB TAB STB6N60M2 3 1 1 3 2 D PAK STD6N60M2 VDS @ TJmax RDS on max ID 650 V 1.2 Ω

Contextual Info: STF6N60M2, STP6N60M2, STU6N60M2 N-channel 600 V, 1.06 Ω typ., 4.5 A MDmesh II Plus low Qg Power MOSFET in TO-220FP, TO-220 and IPAK packages Datasheet - production data Features TAB 3 Order codes 2 1 1 2 IPAK 3 TO-220FP VDS @ TJmax RDS on max ID 650 V

IRF 850 mosfet

Abstract: MOSFET IRF 635 MOSFET IRF 630 MOSFET IRF 713 IRF N-Channel Power MOSFETs IRF 740 N IRF 840 MOSFET IRF 450 MOSFET P Channel Power MOSFET IRF irf 540 mosfet
Contextual Info: FUNCTION GUIDE POWER MOSFETs N-CHANNEL MOSFET TO-220 Vos Id 50 60 80 100 120 150 180 200 2 2.5 350 IRF IRF 713 712 IRF IRF IRF 711 710 1.3 1.5 250 400 450 500 550 600 700 800 850 900 IRF IRF IRF IRF IRF SS P SSP 613 612 614 823 822 2N85 2N90 IRF IRF IRF IRF

6n55

Abstract: power mosfet 6n60 TH6N55 6n55 data
Contextual Info: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA M T H 6N 55 M T H 6 N 60 M TM 6N60 Designer's Data Sheet P o w e r Field E ffe ct T ra n sisto r N-Channel Enhancement-Mode Silicon Gate TM OS These TM O S Pow er FETs are desig n ed fo r h ig h vo ltag e , high speed p o w e r sw itch in g a p p lica tio n s such as sw itch in g regulators,

SSP6N60

Abstract: 6N60 MOSFET 6n60
Contextual Info: N-CHANNEL POWER MOSFETS SSP6N55/6N60 FEATURES • Lower Ros • • • • • • ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability

6N60

Abstract: SSM6N55
Contextual Info: _98D_0 5319 - 7964.142 SAMSUNG SEMICONDUCTOR INC. DE I TTtiM m E Q0QS3n 3 | ‘ ' . D _ 7 ~ -3 7 ^ / 2 N-CHANNEL PO WER MOSFETS SSM6N55/6N60 FEATURES Low Ros on at high voltage Improved inductive ruggedness Excellent high voltage stability Fast switching times

SSS6N60

Abstract: ADE 443 TI MOSFET 6n60 6n60 K300 SSS6N55
Contextual Info: N-CHANNEL POWER MOSFETS SSS6N55/6N60 FEATU RES • A • • 9 • • • TO-270* Low er Ros com* 1im ffMp ro /Nvo hiAo<4 a i •«eA ru rn••gAgAeAd n eAsAsA inMdrAu••c tiv F es! s w itc h in g tim e s R ugged p o ly s ilic o n g a te c e il s tru c tu re

IRFD1Z3 equivalent

Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
Contextual Info: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not

P6N60

Abstract: p6n55 tp6n55 6N55 MTP6N55 TP6N60 SITH 6n55 data MTP6N6 power mosfet 6n60
Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet M T P 6N 55 M T P 6N 60 P o w e r Field E ffe ct T ra n sisto r N -Ch ann el Enhancem ent-M ode S ilic o n G ate T M O S These TM O S P ow er FETs are designed fo r h ig h voltag e , high speed p o w e r s w itc h in g a pp licatio n s such as sw itch in g regu la to rs,