POWER MOSFET AO4600 Search Results
POWER MOSFET AO4600 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| MGN1S1212MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-12V GAN |
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| MGN1S0512MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 5-12V GAN |
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| MGN1S0508MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 5-8V GAN |
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| MGN1D120603MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-6/-3V GAN |
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| MGN1D050603MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 5-6/-3V GAN |
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POWER MOSFET AO4600 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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AO4600CContextual Info: AO4600C Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4600C uses advanced trench technology to provide excellent RDS ON and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. |
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AO4600C | |
POWER MOSFET AO4600
Abstract: AO4600 AO4600L
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AO4600 AO4600 AO4600L POWER MOSFET AO4600 | |
ao4600
Abstract: Complementary POWER MOSFET AO4600 AO4600L PD-00165 P-channel AND N-Channel power mosfet SO-8 ENHANCEMENT MARKING CODE l22 marking 49M 65D2
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AO4600 AO4600 AO4600L AO4600L PD-00165 Complementary POWER MOSFET AO4600 PD-00165 P-channel AND N-Channel power mosfet SO-8 ENHANCEMENT MARKING CODE l22 marking 49M 65D2 | |
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Contextual Info: AO4600 Complementary Enhancement Mode Field Effect Transistor General Description Features n-channel p-channel VDS V = 30V -30V ID = 6.9A (VGS = 10V) -5A (VGS = -10V) RDS(ON) < 27mΩ < 49mΩ (VGS =- 10V) < 32mΩ < 64mΩ (VGS =- 4.5V) < 50mΩ < 120mΩ (VGS = -2.5V) |
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AO4600 AO4600 AO4600L AO4600L PD-00165 |