Mosfet J49
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF171A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver stages from 30–200 MHz. 45 W, 150 MHz MOSFET BROADBAND RF POWER FET
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MRF171A/D
MRF171A
MRF171A
Mosfet J49
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D1843
Abstract: MP45F 2SK3326B-S17-AY 2sk3326b 2SK3326
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3326B SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3326B is N-Channel MOSFET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.
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2SK3326B
2SK3326B
O-220)
2SK3326B-S17-AY
O-220
MP-45F)
D1843
MP45F
2SK3326B-S17-AY
2SK3326
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D1843
Abstract: 2SK3326B-S17-AY 2SK3326B 2sk3326 mosfet 4702 MP45F
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3326B SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3326B is N-Channel MOSFET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.
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2SK3326B
2SK3326B
O-220)
2SK3326B-S17-AY
O-220
MP-45F)
D1843
2SK3326B-S17-AY
2sk3326
mosfet 4702
MP45F
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3325B SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3325B is N-channel MOSFET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.
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2SK3325B
2SK3325B
2SK3325B-S19-AY
O-220AB
MP-25)
O-263
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF3010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF3010 RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET 10 W, 1.6 GHz, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET Designed for IMARSAT satellite up link at 1.6 to 1.64 GHz, 28 volts, Class AB,
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MRF3010/D
MRF3010
MRF3010
MRF3010/D
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sd 431 transistor
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4058 SWITCHING N-CHANNEL POWER MOSFET ORDERING INFORMATION DESCRIPTION The 2SK4058 is N-channel MOSFET device that features a PART NUMBER low on-state resistance and excellent switching characteristics, 2SK4058-S15-AY
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2SK4058
2SK4058
2SK4058-S15-AY
O-251
O-252
2SK4058-ZK-E1-AY
2SK4058-ZK-E2-AY
O-251)
sd 431 transistor
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4057 SWITCHING N-CHANNEL POWER MOSFET ORDERING INFORMATION DESCRIPTION The 2SK4057 is N-channel MOSFET device that features a PART NUMBER low on-state resistance and excellent switching characteristics, 2SK4057-S15-AY
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2SK4057
2SK4057
2SK4057-S15-AY
2SK4057-ZK-E1-AY
2SK4057-ZK-E2-AY
O-251
O-252
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF166W/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field Effect Transistor MRF166W N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver stages to 30 – 500 MHz.
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MRF166W/D
MRF166W
MRF166W/D
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ687 SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The 2SJ687 is P-channel MOSFET device and a excellent switch that can be driven by a low power-supply voltage. FEATURES • Low on-state resistance RDS on 1 = 7.0 mΩ MAX. (VGS = −4.5 V, ID = −10 A)
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2SJ687
2SJ687
2SJ687-ZK-E1-AY
2SJ687-ZK-E2-AY
O-252
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2SJ687
Abstract: 2sj687-zk-e1-ay d1871 2SJ687-ZK-E2-AY
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ687 SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The 2SJ687 is P-channel MOSFET device and a excellent switch that can be driven by a low power-supply voltage. FEATURES • Low on-state resistance RDS on 1 = 7.0 mΩ MAX. (VGS = −4.5 V, ID = −10 A)
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2SJ687
2SJ687
2SJ687-ZK-E1-AY
2SJ687-ZK-E2-AY
O-252
O-252)
2sj687-zk-e1-ay
d1871
2SJ687-ZK-E2-AY
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2SK4079
Abstract: QN7002
Text: Preliminary Data Sheet QN7002 R07DS0269EJ0100 Rev.1.00 Mar 11, 2011 N-CHANNEL MOSFET FOR SWITCHING Description The QN7002, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.5 V power source.
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QN7002
R07DS0269EJ0100
QN7002,
QN7002-T1B-AT
3000p/Reel
SC-59
2SK4079044
2SK4079
QN7002
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PA2680T1E
Abstract: G17661EJ2V0DS00
Text: DATA SHEET MOSFET WITH SCHOTTKY BARRIER DIODE PA2680T1E N-CHANNEL MOSFET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING PIN CONNECTION Top View DESCRIPTION The μ PA2680T1E is a switching device, which can be driven directly by a 4.5 V power source. 6 5 4
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PA2680T1E
PA2680T1E
G17661EJ2V0DS00
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Untitled
Abstract: No abstract text available
Text: DATA SHEET Tentative Part No. NN30311A Package Code No. ⎯ Publication date: July 2012 Ver. EB 1 NN30311A NN30311A (Tentative) 6A Synchronous DC-DC Step down Regulator comprising of Controller IC and Power MOSFET Overview NN30311A is a synchronous DC-DC Step down Regulator (1-ch) comprising of a Controller IC and two Power MOSFET,
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NN30311A
NN30311A
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NEC 9001
Abstract: 2SK2597 J549 NEC MOSFET PUSHPULL
Text: PRELIMINARY DATA SHEET SILICON POWER MOS FIELD EFFECT TRANSISTOR 2SK2597 N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION PACKAGE DRAWING Unit: mm • High output, high gain PO = 100 W, GL = 13 dB (TYP.) (f = 900 MHz)
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2SK2597
800-MHz
NEC 9001
2SK2597
J549
NEC MOSFET PUSHPULL
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nec 88n04
Abstract: 88n04 NP88N04MHE NP88N04EHE NP88N04EHE-E1-AY NP88N04EHE-E2-AY NP88N04KHE NP88N04KHE-E1-AY NP88N04KHE-E2-AY NP88N04CHE
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP88N04EHE, NP88N04KHE NP88N04CHE, NP88N04DHE, NP88N04MHE, NP88N04NHE SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
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NP88N04EHE,
NP88N04KHE
NP88N04CHE,
NP88N04DHE,
NP88N04MHE,
NP88N04NHE
NP88N04EHE-E1-AY
NP88N04EHE-E2-AY
NP88N04KHE-E2-AY
NP88N04KHE-E1-AY
nec 88n04
88n04
NP88N04MHE
NP88N04EHE
NP88N04EHE-E1-AY
NP88N04EHE-E2-AY
NP88N04KHE
NP88N04KHE-E1-AY
NP88N04KHE-E2-AY
NP88N04CHE
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP88N04CHE,NP88N04DHE,NP88N04EHE,NP88N04KHE SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION ORDERING INFORMATION These products are N-channel MOS Field Effect Transistor designed for high current switching applications.
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NP88N04CHE
NP88N04DHE
NP88N04EHE
NP88N04KHE
O-220AB
O-262
O-263
MP-25ZJ)
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d1415
Abstract: NP36N055SLE NP36N055HLE NP36N055ILE
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP36N055HLE, NP36N055ILE, NP36N055SLE SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION ORDERING INFORMATION These products are N-Channel MOS Field Effect PART NUMBER Transistor designed for high current switching applications.
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NP36N055HLE,
NP36N055ILE,
NP36N055SLE
NP36N055HLE
NP36N055ILE
O-251
O-252
O-251)
d1415
NP36N055SLE
NP36N055HLE
NP36N055ILE
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NP32N055HDE
Abstract: NP32N055IDE NP32N055SDE
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP32N055HDE, NP32N055IDE, NP32N055SDE SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION ORDERING INFORMATION These products are N-channel MOS Field Effect Transistor PART NUMBER designed for high current switching applications.
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NP32N055HDE,
NP32N055IDE,
NP32N055SDE
NP32N055HDE
NP32N055IDE
O-251
O-252
O-251)
NP32N055HDE
NP32N055IDE
NP32N055SDE
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NP32N055SHE
Abstract: NP32N055HHE NP32N055IHE d1415
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP32N055HHE, NP32N055IHE, NP32N055SHE SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION ORDERING INFORMATION These products are N-Channel MOS Field Effect PART NUMBER Transistors designed for high current switching applications.
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NP32N055HHE,
NP32N055IHE,
NP32N055SHE
NP32N055HHE
NP32N055IHE
O-251
O-252
O-251)
NP32N055SHE
NP32N055HHE
NP32N055IHE
d1415
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NP32N055SLE
Abstract: NP32N055HLE NP32N055ILE
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP32N055HLE,NP32N055ILE,NP32N055SLE SWITCHING N-CHANNEL POWER MOSFET ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect PART NUMBER Transistor designed for high current switching applications.
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NP32N055HLE
NP32N055ILE
NP32N055SLE
NP32N055HLE
NP32N055ILE
O-251
O-252
O-251)
NP32N055SLE
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6A4 DIODE
Abstract: 30-PIN
Text: DATA SHEET MOS INTEGRATED CIRCUIT ` µPD168001 MONOLITHIC 4-CHANNEL H BRIDGE + LOW-SIDE SWITCH DESCRIPTION The µPD168001 is a monolithic 4-channel H bridge driver and low-side switch IC that uses a power MOSFET at the output stage. Because of the MOSFET at the output stage, both the inputs and outputs are interfaced by PWM
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PD168001
PD168001
30-pin
30-ems,
6A4 DIODE
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Mosfet J49
Abstract: MRF171A equivalent SU 179 transistor motorola MRF171a PF 0849 B Nippon capacitors motorola transistor 912
Text: MOTOROLA Order this document by MRF171A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF171A RF Power Field -E ffect Transistor N-Channel Enhancement-Mode MOSFET Designed primarily for wideband large-signal output and driver stages from 30-200 MHz. •
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MRF171A/D
MRF171A
Mosfet J49
MRF171A equivalent
SU 179 transistor
motorola MRF171a
PF 0849 B
Nippon capacitors
motorola transistor 912
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET SILICON POWER MOS FIELD EFFECT TRANSISTOR NEM0899F06-30 N-CHANNEL SILICON POWER MOSFET FOR UHF-TV TRANSMITTER POWER AMPLIFIER FEATURES • PACKAGE DRAWING Unit: mm High output, high gain, high efficiency Po = 1 00 W, G l = 1 2 dB,
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NEM0899F06-30
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NEC 9001
Abstract: NEC MOSFET PUSHPULL EM0995F06-30
Text: PRELIMINARY DATA SHEET SILICON POWER MOS FIELD EFFECT TRANSISTOR NEM0995F06-30 N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION FEATURES • PACKAGE DRAWING Unit: mm High output, High gain Po = 100 W, GL = 13 dB (TYP.) (f = 900 MHz)
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NEM0995F06-30
NEC 9001
NEC MOSFET PUSHPULL
EM0995F06-30
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