POWER MOSFET DATA BOOK Search Results

MOSFET BOOK

Abstract: book mosfet
Contextual Info: 1233-7091 Septem ber 1997 Advanced Power MOSFET High Voltagei 700~~900\ ' 1998 DATA BOOK ELECTRONICS

Mosfet J49

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF171A N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver stages from 30–200 MHz. 45 W, 150 MHz MOSFET BROADBAND

j718

Abstract: VK200/10-3B
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF3010 RF Power Field E ffect Transistor N-Channel Enhancement-Mode Lateral MOSFET l o w , 1.6 GHz, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET Designed for IMARSAT satellite up link at 1.6 to 1.64 GHz, 28 volts, Class AB,

Mosfet J49

Contextual Info: MOTOROLA Order this document by MRF171A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver stages from 30–200 MHz. 45 W, 150 MHz MOSFET BROADBAND RF POWER FET

905-170

Abstract: MRF3010 VK200 VK20019-4B
Contextual Info: MOTOROLA Order this document by MRF3010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF3010 RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET 10 W, 1.6 GHz, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET Designed for IMARSAT satellite up link at 1.6 to 1.64 GHz, 28 volts, Class AB,

D1843

Abstract: MP45F 2SK3326B-S17-AY 2sk3326b 2SK3326
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3326B SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3326B is N-Channel MOSFET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.

D1857

Abstract: 2SK3298B 2SK3298B-S17-AY mosfet 2SK329
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3298B SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3298B is N-channel MOSFET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.

D1843

Abstract: 2SK3326B-S17-AY 2SK3326B 2sk3326 mosfet 4702 MP45F
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3326B SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3326B is N-Channel MOSFET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3325B SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3325B is N-channel MOSFET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.

2sk3305

Abstract: 2SK3305B-S19-AY MP-25 2SK3305B
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3305B SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3305B is N-channel MOSFET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.

D1846

Abstract: 2SK3306B-S17-AY 2sk3306 2sk3306b
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3306B SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3306B is N-Channel MOSFET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.

D1857

Abstract: 2SK3299B-S19-AY MP-25 2SK3299B
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3299B SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3299B is N-channel MOSFET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.

2SK3325B

Abstract: MP-25ZK D1842 D18429EJ2V0DS00 2SK3325B-S19-AY 2SK3325B-ZK-E1-AY 2SK3325B-ZK-E2-AY MP-25
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3325B SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3325B is N-channel MOSFET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.

Contextual Info: MOTOROLA Order this document by MRF3010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF3010 RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET 10 W, 1.6 GHz, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET Designed for IMARSAT satellite up link at 1.6 to 1.64 GHz, 28 volts, Class AB,

NEM0995F06-30

Abstract: NEC MOSFET PUSHPULL
Contextual Info: DATA SHEET PRELIMINARY DATA SHEET SILICON POWER MOS FIELD EFFECT TRANSISTOR NEM0995F06-30 N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION FEATURES PACKAGE DRAWING Unit: mm • High output, High gain 45˚

D1790

Abstract: marking H12 Diode marking m7 2SJ185 2SK1399 NEC PART NUMBER MARKING
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ185 P-CHANNEL MOSFET FOR SWITCHING PACKAGE DRAWING Unit: mm The 2SJ185 is a P-channel vertical type MOSFET which can be driven by 2.5 V power supply. 2.8 ±0.2 2.9 ±0.2 power saving. FEATURES • Directly driven by ICs having a 3 V power supply.

m30 tf 125

Abstract: marking h14 2SJ203 m400 equivalent
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ203 P-CHANNEL MOSFET FOR SWITCHING PACKAGE DRAWING Unit: mm The 2SJ203 is a P-channel vertical type MOSFET which can be driven by 2.5 V power supply. 2.8 ±0.2 2.9 ±0.2 power saving. FEATURES • Directly driven by ICs having a 3 V power supply.

D1781

Abstract: 2SK1588 TC-2352A
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1588 N-CHANNEL MOSFET FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION The 2SK1588 is an N-channel vertical type MOSFET which 4.5 ±0.1 can be driven by 2.5 V power supply. As the MOSFET is driven by low voltage and does not

sd 431 transistor

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4058 SWITCHING N-CHANNEL POWER MOSFET ORDERING INFORMATION DESCRIPTION The 2SK4058 is N-channel MOSFET device that features a PART NUMBER low on-state resistance and excellent switching characteristics, 2SK4058-S15-AY

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4057 SWITCHING N-CHANNEL POWER MOSFET ORDERING INFORMATION DESCRIPTION The 2SK4057 is N-channel MOSFET device that features a PART NUMBER low on-state resistance and excellent switching characteristics, 2SK4057-S15-AY

marking g20

Abstract: 2SK1658
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1658 N-CHANNEL MOSFET FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION The 2SK1658 is an N -channel vertical type MOSFET which 2.1±0.1 can be driven by 2.5 V power supply. 1.25±0.1 As the MOSFET is low Gate Leakage Current, it is suitable for

Mosfet J49

Abstract: DL110 MRF171A MRF171 VK200 MOTOROLA MASTER RF Products
Contextual Info: MOTOROLA Order this document by MRF171A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF171A RF Power Field-Effect Transistor N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver stages from 30–200 MHz.

726 MOTOROLA N CHANNEL POWER MOS FET TRANSISTORS

Abstract: 741 datasheet motorola MOTOROLA POWER 726 MOS FET TRANSISTOR MOTOROLA TRANSISTOR 726 motorola MOSFET 935 MRF166W motorola rf book
Contextual Info: MOTOROLA Order this document by MRF166W/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field Effect Transistor MRF166W N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver stages to 30 – 500 MHz.

NEM0899F06-30

Abstract: J294 J29-4
Contextual Info: DATA SHEET PRELIMINARY DATA SHEET SILICON POWER MOS FIELD EFFECT TRANSISTOR NEM0899F06-30 N-CHANNEL SILICON POWER MOSFET FOR UHF-TV TRANSMITTER POWER AMPLIFIER FEATURES PACKAGE DRAWING Unit: mm • High output, high gain, high efficiency Po = 100 W, GL = 12 dB, KD = 50 %