POWER MOSFET DPACK Search Results

Contextual Info: 2SK3974-01L,S FUJI POWER MOSFET Super FAP-G Series 200509 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters

Contextual Info: 2SK3974-01L,S FUJI POWER MOSFET 200509 Super FAP-G Series N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters

mosfet vgs 5v vds 100v

Contextual Info: SSD50N10-18D 43A , 100V , RDS ON 18mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION TO-252(D-Pack) These miniature surface mount MOSFET utilize a high cell density trench process to provide low RDS(on)

SSD20N20-125D

Abstract: MosFET MOSFET N-CH 200V
Contextual Info: SSD20N20-125D 12A , 200V , RDS ON 260mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION TO-252(D-Pack) These miniature surface mount MOSFET utilize a high cell density trench process to provide low RDS(on)

SSD14N25-280D

Abstract: MosFET
Contextual Info: SSD14N25-280D 10.9A , 250V , RDS ON 280mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION TO-252(D-Pack) These miniature surface mount MOSFET utilize a high cell density trench process to provide low RDS(on)

SSD20N10-130D

Abstract: MosFET
Contextual Info: SSD20N10-130D 17A , 90V , RDS ON 130mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION TO-252(D-Pack) These miniature surface mount MOSFET utilize a high cell density trench process to provide low RDS(on)

SSD30N15-60D

Abstract: MosFET
Contextual Info: SSD30N15-60D 22A , 150V , RDS ON 69mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION TO-252(D-Pack) These miniature surface mount MOSFET utilize a high cell density trench process to provide low RDS(on)

48v 30 a battery charger

Abstract: GE battery management system 39a 61a
Contextual Info: SSD50P06-15D 61A, -60V, RDS ON 17mΩ P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize high cell density process.Low RDS(on) assures minimal power loss

SSD50P06-15D

Abstract: MosFET
Contextual Info: SSD50P06-15D -44A, -60V, RDS ON 17mΩ P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize high cell density process.Low RDS(on) assures minimal power loss

SSD20P15-295D

Abstract: MosFET
Contextual Info: SSD20P15-295D -10.7A, -150V, RDS ON 295mΩ Ω P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize high cell density process.Low RDS(on) assures minimal power loss

SSD50P03

Contextual Info: SSD50P03-09D 61A, -30V, RDS ON 9mΩ P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-252(D-Pack) DESCRIPTION These miniature surface mount MOSFETs utilize high cell density process. Low RDS(on) assures minimal power

SSD40P04-20D

Abstract: MosFET td 1583 diode 20D
Contextual Info: SSD40P04-20D P-Ch Enhancement Mode Power MOSFET -36A, -40V, RDS ON 30mΩ Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize high cell density process. Low RDS(on) assures minimal power loss and conserves energy, making this

SSD30P06-45D

Contextual Info: SSD30P06-45D P-Ch Enhancement Mode Power MOSFET 28A, -60V, RDS ON 49mΩ Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize high cell density process. Low RDS(on) assures minimal power loss and conserves energy, making this

SSD70N04-06D

Abstract: MosFET
Contextual Info: SSD70N04-06D 75A, 40V, RDS ON 6 mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION TO-252(D-Pack) These miniature surface mount MOSFETs utilize high cell density process. Low RDS(on) assures minimal power

A4539

Abstract: IDA45
Contextual Info: SSD50P06-15D P-Ch Enhancement Mode Power MOSFET 45A, -60V, RDS ON 17mΩ Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize high cell density process. Low RDS(on) assures minimal power loss and conserves energy, making this

SSD20P03-60

Abstract: MosFET dpack power mosfet
Contextual Info: SSD20P03-60 P-Ch Enhancement Mode Power MOSFET 24A, -30V, RDS ON 59mΩ Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.

SSD60N04-12D

Abstract: MosFET
Contextual Info: SSD60N04-12D N-Ch Enhancement Mode Power MOSFET 53A, 40V, RDS ON 12mΩ Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.

SSD20P04-60D

Abstract: MosFET A2218 SSD20P04
Contextual Info: SSD20P04-60D P-Ch Enhancement Mode Power MOSFET 22A, -40V, RDS ON 69mΩ Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide Low RDS(on) and to ensure minimal power loss and heat

SSD20P06-135D

Abstract: MosFET 135D
Contextual Info: SSD20P06-135D P-Ch Enhancement Mode Power MOSFET 16A, -60V, RDS ON 135mΩ Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide Low RDS(on) and to ensure minimal power loss and heat

ssd10n20-400d

Abstract: ssd10n20
Contextual Info: SSD10N20-400D N-Ch Enhancement Mode Power MOSFET 9.2A, 200V, RDS ON 400mΩ Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation.

12a36

Contextual Info: SSD20N15-250D N-Ch Enhancement Mode Power MOSFET 12A, 150V, RDS ON 255mΩ Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation.

Contextual Info: SSD20P06-135D P-Ch Enhancement Mode Power MOSFET 16A, -60V, RDS ON 135mΩ Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide Low RDS(on) and to ensure minimal power loss and heat

mp2a5100

Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
Contextual Info: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors

SSR3055

Abstract: LP12A u3055
Contextual Info: N-CHANNEL POWER MOSFET SSR3055/SSU3055 FEATURES • • • • • • • • D-PACK Lower Ros on Excellent voltage stability Fast switching speeds Rugged polysllicon gate cell structure Lower Input capacitance Extended safe operating area Improved high temperature reliability