POWER MOSFET HIGH CURRENT Search Results
POWER MOSFET HIGH CURRENT Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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GC331AD7LQ103KX18D | Murata Manufacturing Co Ltd | High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive |
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GC331CD7LP683KX19L | Murata Manufacturing Co Ltd | High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive |
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GC332QD7LP104KX18L | Murata Manufacturing Co Ltd | High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive |
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GC355DD7LP684KX18L | Murata Manufacturing Co Ltd | High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive |
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GR331AD7LP333KW01D | Murata Manufacturing Co Ltd | High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for General Purpose |
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POWER MOSFET HIGH CURRENT Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Power MOSFET, toshiba
Abstract: 4502 mosfet 2sk3561 HIGH POWER MOSFET TOSHIBA 2SK3568 2sk3562 2SK2842 2SK3742 2SK3567 equivalent 2SK3567
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VDSS100V) DP0530019 O-220SIS Power MOSFET, toshiba 4502 mosfet 2sk3561 HIGH POWER MOSFET TOSHIBA 2SK3568 2sk3562 2SK2842 2SK3742 2SK3567 equivalent 2SK3567 | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 8N65 Power MOSFET 8A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8N65 is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high |
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QW-R502-591 | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 3N70A Power MOSFET 700V, 3A N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N70A is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high |
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3N70A 3N70A QW-R502-620 | |
on/927 DIODEContextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N65Z Power MOSFET 10A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N65Z is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high |
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10N65Z 10N65Z QW-R502-927, on/927 DIODE | |
10N65TContextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N65T Power MOSFET 10A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N65T is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high |
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10N65T 10N65T 10N65TL-TF3-T 10N65TG-TF3-Tat QW-R502-878 | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 3N65K Power MOSFET 3A, 650V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 3N65K is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high |
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3N65K 3N65K O-220F O-220F2 O-252 QW-R502-837 | |
8N65
Abstract: 8N65L-T2Q-T F 8N65
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QW-R502-591 8N65 8N65L-T2Q-T F 8N65 | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 3N65 Power MOSFET 3A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N65 is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high |
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QW-R502-590 | |
10n65
Abstract: tf 10n65
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10N65 10N65 QW-R502-588 tf 10n65 | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 3N65A Power MOSFET 3A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N65A is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high |
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3N65A 3N65A QW-R502-627 | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 3N65 Power MOSFET 3A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N65 is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high |
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QW-R502-590 | |
627 DIODEContextual Info: UNISONIC TECHNOLOGIES CO., LTD 3N65A Power MOSFET 3A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N65A is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high |
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3N65A 3N65A QW-R502-627 627 DIODE | |
10n65
Abstract: UTC10N65 10N60L-TF2-T 10N65L-TA3-T 10N65G
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10N65 10N65 O-220 O-220F1 O-220F2 O-220F QW-R502-588 UTC10N65 10N60L-TF2-T 10N65L-TA3-T 10N65G | |
3N65ZContextual Info: UNISONIC TECHNOLOGIES CO., LTD 3N65Z Power MOSFET 3A, 650V N-CHANNEL POWER MOSFET DESCRIPTION 1 The UTC 3N65Z is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high |
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3N65Z 3N65Z O-220F QW-R502-746 | |
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f10n65Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N65 Power MOSFET 10A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high |
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10N65 10N65 O-220 O-220F1 O-220F2 O-220F QW-R502-588 f10n65 | |
3N60Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 3N60A Power MOSFET 3A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N60A is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high |
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3N60A 3N60A QW-R502-610 3N60 | |
8N65Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 8N65 Power MOSFET 7.5A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8N65 is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high |
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QW-R502-591 8N65 | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 8N65K-MT Preliminary Power MOSFET 8A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8N65K-MT is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high |
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8N65K-MT 8N65K-MT O-220F2 QW-R502-A98 | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N65Z-Q Power MOSFET 10A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N65Z-Q is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high |
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10N65Z-Q 10N65Z-Q QW-R502-980. | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 3N65K-MK4 Preliminary Power MOSFET 3A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N65K-MK4 is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high |
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3N65K-MK4 3N65K-MK4 QW-R205-045 | |
TPD7100FContextual Info: TPD7100F TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD7100F 2 channel High-Side N-ch Power MOSFET Gate Driver The TPD7100F is a 2 channel high-side N-ch power MOSFET gate driver. This IC contains a power MOSFET driver and power MOSFET protective |
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TPD7100F TPD7100F | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 9N70 Preliminary Power MOSFET 9A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 9N70 is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged |
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9N70L-TA3-T 9N70G-TA3-at QW-R502-617 | |
9N70Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 9N70 Preliminary Power MOSFET 9A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 9N70 is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged |
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9N70L-TA3-T 9N70G-TA3-T QW-R502-617 9N70 | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 3N65K-MK Preliminary Power MOSFET 3A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N65K-MK is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high |
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3N65K-MK 3N65K-MK QW-R205-009 |