POWER MOSFET RISE TIME 1000V NS Search Results

MOSFET 1000v 30a

Abstract: 10A, 100v fast recovery diode OM9027SP1 OM9028SP1 OM9029SP1 OM9030SP1 diode 1000V 10a
Contextual Info: OM9027SP1 OM9029SP1 OM9028SP1 OM9030SP1 UNCOMMITTED POWER MOSFET AND HIGH SPEED RECTIFIER IN 6-PIN PACKAGE 100V Thru 1000V, 4A To 30A Power MOSFET And High Speed Rectifier In One Package FEATURES • • • • • MOSFET And Common Cathode Rectifier In One Package

Contextual Info: OM9027SP1 OM9029SP1 OM9Q28SP1 OM9030SP1 UNCOMMITTED POWER MOSFET AND HIGH SPEED RECTIFIER IN 6-PIN PACKAGE 100V Thru 1000V, 4A To 30A Power MOSFET And High Speed Rectifier In One Package FEATURES • • • • • MOSFET And Common Cathode Rectifier In One Package

Contextual Info: OM9027SP1 OM9029SP1 OM9Q28SP1 QM9030SP1 UNCOMMITTED POWER MOSFET AND HIGH SPEED RECTIFIER IN 6-PIN PACKAGE 10 0 V T h r u 1000V. 4A To 3 0 A P o w e r M O S F E T A n d High S p e e d R ect ifi er In O n e P a c k a g e FEATURES • • • • • M OSFET And Common Cathode Rectifier In One Package

Contextual Info: OM9Û27SP1 OM9 29SP1 OM9Q28SP1 OM9030SP1 UNCOMMITTED POWER MOSFET AND HIGH SPEED RECTIFIER IN 6-PIN PACKAGE 100V Thru 1000V, 4A To 30 A Power M O S F E T And High Spee d Rectifier In On e Package FEATURES • • • • • MOSFET And Common Cathode Rectifier In One Package

POWER MOSFET Rise Time 1000V NS

Abstract: MOSFET 1000v 30a inverter circuit 200v to 100v mosfet 10a 500v mosfet 400 V 10A OM9027SP1 OM9028SP1 OM9029SP1 OM9030SP1 OM9Q27SP1
Contextual Info: OM9027SP1 OM9029SP1 OM9Q28SP1 OM9030SP1 UNCOMMITTED POWER MOSFET AND HIGH SPEED RECTIFIER IN 6-PIN PACKAGE 100V Thru 1000V, 4A To 30A Power MOSFET And High Speed Rectifier In One Package FEATURES • • • • • M O S F E T And Common Cathode Rectifier In O ne Package

Contextual Info: QFET FQA8N100C 1000V N-Channel MOSFET Features Description • 8A, 1000V, RDS on = 1.45Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge (typical 53 nC)

FQA8N100C

Abstract: mosfet 1000v 100A 1000V mosfet fqa8n100
Contextual Info: QFET FQA8N100C 1000V N-Channel MOSFET Features Description • 8A, 1000V, RDS on = 1.45Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge (typical 53 nC)

FQA8N100C

Abstract: mosfet 1000v 100A 1000V mosfet
Contextual Info: QFET FQA8N100C 1000V N-Channel MOSFET Features Description • 8A, 1000V, RDS on = 1.45Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge (typical 53 nC)

100A 1000V mosfet

Contextual Info: APTMC170AM30CT1AG VDSS = 1700V RDSon = 30mΩ max @ Tj = 25°C ID = 106A @ Tc = 25°C Phase leg SiC MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • SiC Power MOSFET

Contextual Info: APTMC170AM60CT1AG VDSS = 1700V RDSon = 60mΩ max @ Tj = 25°C ID = 53A @ Tc = 25°C Phase leg SiC MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • SiC Power MOSFET

1000V 25A Mosfet

Abstract: MOSFET 1000v 30a p-channel 250V 30A power mosfet OM6219SP1 OM6220SP1 OM6221SP1 OM6222SP1 POWER MOSFET Rise Time 1000V NS tf 115 250v 20 a
Contextual Info: OM6219SP1 OM6221SP1 OM6220SP1 OM6222SP1 DUAL UNCOMMITTED POWER MOSFETS IN LOW PROFILE PLASTIC POWER PACKAGE 100V Thru 1000V, Up To 30 Amp, N-Channel MOSFETs With Low RDS on Characteristics FEATURES • • • • • • • Isolated High Density Package

mosfet 1000v

Abstract: FQH8N100C 800V 40A power mosfet full bridge
Contextual Info: QFET FQH8N100C 1000V N-Channel MOSFET Features Description • • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

MOSFET 1000v 30a

Abstract: OM6223SP2 OM6224SP2 OM6225SP2 OM6226SP2 p-channel 250V 30A power mosfet
Contextual Info: OM6223SP2 OM6224SP2 OM6225SP2 OM6226SP2 FOUR UNCOMMITTED POWER MOSFETS IN ISOLATED LOW PROFILE PLASTIC PACKAGE Four Uncommitted 100V To 1000V, Up To 30A N-Channel Power MOSFETs In One Package FEATURES • • • • • • Isolated High Density Package High Current

Contextual Info: OM6219SP1 OM6221SP1 OM622QSP1 OM6222SP1 DUAL UNCOMMITTED POWER MOSFETS IN LOW PROFILE PLASTIC POWER PACKAGE 100V Thru 1000V, Up To 30 Amp, N-Channel MOSFETs With Low RDS on Characteristics FEATURES • • • • • • • Isolated High Density Package

MOSFET 1000v 30a

Abstract: 1000V P-channel MOSFET ic AM 12A OM6223SP2 OM6224SP2 OM6225SP2 OM6226SP2 6015-a
Contextual Info: OM6223SP2 OM6224SP2 OM6225SP2 OM6226SP2 FOUR UNCOMMITTED POWER MOSFETS IN ISOLATED LOW PROFILE PLASTIC PACKAGE \V M Four Uncommitted 100V To 1000V, Up To 30A N-Channel Power MOSFETs In One Package W FEATURES • • • • • • Isolated High Density Package

FS-10 16A

Abstract: p-channel 250V 30A power mosfet
Contextual Info: OM6219SP1 OM6221SP1 OM622QSP1 OM6222SP1 DUAL UNCOMMITTED POWER MOSFETS IN LOW PROFILE PLASTIC POWER PACKAGE 100V Thru 1000V. Up To 30 Am p. N-Channel M OS FE Ts With L o w RDS 0n C h a r a c t e r is t ic s FEATURES Isolated High Density Package High Current Dual MOSFETs

ka3525 12v to 230v inverters circuit diagrams

Abstract: smps circuit diagram 450w KA3525 KA3525 inverter FSD210 dip-8 KA3525A FSD200 equivalent fan7610 KA3525A application note 500w smps audio amplifier circuit diagram
Contextual Info: AC/DC Switch Mode Power Supply Design Guide www.fairchildsemi.com AC/DC Switch Mode Power Supply Design Guide Table Of Contents Product Information Total

irfcg20

Abstract: HV MOSFET
Contextual Info: SENSITRON SEMICONDUCTOR SCP-4926 TECHNICAL DATA DATASHEET 1138, REV. C HV MOSFET Power Module Data Sheet DESCRIPTION: 3000 VOLT, 1.0 AMP, INDUSTRIAL MOSFET POWER MODULE. AT Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL CONDITION

IRFCG20

Abstract: MOSFET 50 amp 1000 volt
Contextual Info: SENSITRON SEMICONDUCTOR SCP-4926 TECHNICAL DATA DATASHEET 1138, REV. C HV MOSFET Power Module Data Sheet DESCRIPTION: 3000 VOLT, 1.0 AMP, INDUSTRIAL MOSFET POWER MODULE. AT Tj=25 C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PARAMETER POWER MOSFETS Q1,…,6

Contextual Info: OM6219SP1 OM6221SP1 OM622QSP1 OM6222SP1 DUAL UNCOMMITTED POWER MOSFETS IN LOW PROFILE PLASTIC POWER PACKAGE 100V Thru 1000V. Up To 30 Amp, N-Channel M O SFETs With Low Ros on Characteristics FEATURES Isolated High Density Package High Current Dual MOSFETs

Contextual Info: OM6227SS OM6230SS OM6232SS OM6228SS OM6231SS OM6233SS DUAL HIGH CURRENT POWER MOSFETS IN HERMETIC ISOLATED SIP PACKAGE 400V, 500V, 1000V, Up To 24 Amp N-Channel, Dual Size 6 High Energy MOSFETs FEATURES • • • • • • • Dual Uncommitted MOSFETs

OM6005

Abstract: OM6034NM OM6035NM OM6036NM OM6037NM OM6106 OM6006
Contextual Info: OM6034NM OM6036NM OM6035NM OM6037NM POWER MOSFET IN HERMETIC SURFACE MOUNT PACKAGE 100V Thru 1000V, Up To 30 Amp, N-Channel MOSFET In A Surface Mount Package FEATURES • • • • • • Surface Mount Hermetic Package High Current/Low RDS on Fast Switching, Low Drive Current

OM6034NM

Abstract: OM6035NM OM6036NM OM6106
Contextual Info: OM6034NM OM6036NM OM6Q35NM OM6Q37NM POWER MOSFET IN HERMETIC SURFACE MOUNT PACKAGE 100V Thru 1000V, Up To 30 Am p, N-Channel MOSFET In A S urface M ount Package FEATURES • • • • • • Surface Mount Hermetic Package High Current/Low RDS on Fast Switching, Low Drive Current

Contextual Info: OM6034NM OM6036NM OM6035NM OM6037NM POWER MOSFET IN HERMETIC SURFACE MOUNT PACKAGE 100V Thru 1000V, Up To 30 Amp, N-Channel MOSFET In A Surface Mount Package FEATURES • • • • • • Surface Mount Hermetic Package High Current/Low RDS on Fast Switching, Low Drive Current