POWER MOSFET SOT-223 LOW VGS Search Results

JESD97

Abstract: N4NF03L STN4NF03L
Contextual Info: STN4NF03L N-channel 30V - 0.039Ω - 6.5A - SOT-223 STripFET II Power MOSFET General features • Type VDSS RDS on ID STN4NF03L 30V <0.05Ω 6.5A 2 Low threshold drive 1 Description 2 3 SOT-223 This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature

4nf03l

Abstract: 4NF03 STN4NF03L st MARKING E4 e4 sot223 JESD97 diode MARKING CODE 917 marking e4 sot ST
Contextual Info: STN4NF03L N-channel 30 V - 0.039 Ω - 6.5 A - SOT-223 STripFET II Power MOSFET Features • Type VDSS RDS on ID STN4NF03L 30 V <0.05 Ω 6.5 A 2 Low threshold drive 1 Application ■ 2 3 SOT-223 Switching applications Description This Power MOSFET is the latest development of

4NF20L

Abstract: STN4nf20 4nf20 STN4NF20L
Contextual Info: STN4NF20L N-channel 200 V, 1.1 Ω, 1 A SOT-223 low gate charge STripFET II Power MOSFET Features Order code VDSS RDS on max. ID STN4NF20L 200 V < 1.5 Ω 1A • 100% avalanche tested ■ Low gate charge ■ Exceptional dv/dt capability 2 1 2 3 SOT-223 Application

LE2V

Abstract: STN7NF10
Contextual Info: STN7NF10 N-CHANNEL 100V - 0.055 Ω - 5A SOT-223 LOW GATE CHARGE STripFET II POWER MOSFET TYPE STN7NF10 • ■ VDSS RDS on ID 100 V < 0.065 Ω 5A TYPICAL RDS(on) = 0.055 Ω APPLICATION ORIENTED CHARACTERIZATION 2 1 2 3 SOT-223 DESCRIPTION This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and

P008B DIODE

Abstract: STN7NF10
Contextual Info: STN7NF10 N-CHANNEL 100V - 0.055 Ω - 5A SOT-223 LOW GATE CHARGE STripFET II POWER MOSFET TYPE STN7NF10 • ■ VDSS RDS on ID 100 V < 0.065 Ω 5A TYPICAL RDS(on) = 0.055 Ω APPLICATION ORIENTED CHARACTERIZATION 2 1 2 3 SOT-223 DESCRIPTION This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and

A Listing and Cross Reference of Available Technical Literature from ON Semiconductor

Abstract: MMDF3N06VL MMSF4205 MMSF4P01HDR1 MTP75N06HD MTB3N100E mtd1p50e transistor book transistor SOT23 TO4 36 IGBT Manual
Contextual Info: SG385/D Rev. 3, Jul-2000 Low Voltage Surface Mount TMOS Power MOSFET Selector Guide ON Semiconductor Featuring MiniMOS™ SO-8 , EZFET™, Micro8™, SOT-223, TSOP-6, SOT-23, SC-70/SOT-323, DPAK and D2PAK Low Voltage Surface Mount MOSFETs t TMOS Power MOSFETs

Contextual Info: STN1NF20 N-channel 200 V, 1.1 Ω, 1 A SOT-223 STripFET II Power MOSFET Features Order code VDSS RDS on max ID STN1NF20 200 V < 1.5 Ω 1A • 100% avalanche tested ■ Low gate charge ■ Exceptional dv/dt capability 4 1 2 3 SOT-223 Applications ■ Switching applications

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N65 Power MOSFET 1.2A, 650V N-CHANNEL POWER MOSFET 1 1 SOT-223 „ DESCRIPTION The UTC 1N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF3N25Z Power MOSFET 3A, 250V N-CHANNEL POWER MOSFET 1  DESCRIPTION SOT-223 The UTC UF3N25Z is an N-channel enhancement mode Power MOSFET using UTC’ s advanced technology to provide customers with a minimum on-state resistance, low gate charge

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N65 Power MOSFET 1.2A, 650V N-CHANNEL POWER MOSFET 1 1 TO-92 SOT-223  DESCRIPTION The UTC 1N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET 1 1 TO-220F2 SOT-223 „ DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged

Contextual Info: NIF9N05CL Protected Power MOSFET 2.6 A, 52 V, N-Channel, Logic Level, Clamped MOSFET w/ ESD Protection in a SOT-223 Package http://onsemi.com Benefits • High Energy Capability for Inductive Loads • Low Switching Noise Generation Features • • •

Contextual Info: AP9435GK-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement D Low Gate Charge Fast Switching Characteristic -30V RDS ON 50m ID S RoHS Compliant & Halogen-Free BVDSS -6A D SOT-223 G Description

AP9435K

Contextual Info: AP9435K Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Low On-resistance ▼ Fast Switching G -30V RDS ON 50mΩ ID S SOT-223 BVDSS -6A D Description D The Advanced Power MOSFETs from APEC provide the

AP9435GK

Contextual Info: AP9435GK RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Low Gate Charge ▼ Fast Switching G -30V RDS ON 50mΩ ID S SOT-223 BVDSS -6A D Description D The Advanced Power MOSFETs from APEC provide the

JESD97

Abstract: N2NE10L STN2NE10L
Contextual Info: STN2NE10L N-channel 100V - 0.33Ω -2A - SOT-223 STripFET Power MOSFET General features Type VDSS @Tjmax RDS(on) ID STN2NE10L 100V <0.4Ω 1.8A • Exceptional dv/dt capability ■ Avalanche rugged technology ■ 100% avalanche tested ■ Low threshold drive

Contextual Info: STN2NE10L N-channel 100V - 0.33Ω -2A - SOT-223 STripFET Power MOSFET General features Type VDSS @Tjmax RDS(on) ID STN2NE10L 100V <0.4Ω 1.8A • Exceptional dv/dt capability ■ Avalanche rugged technology ■ 100% avalanche tested ■ Low threshold drive

Power MOSFET SOT-223

Abstract: st MARKING E4 JESD97 N2NE10L STN2NE10L
Contextual Info: STN2NE10L N-channel 100V - 0.33Ω -2A - SOT-223 STripFET Power MOSFET General features Type VDSS @Tjmax RDS(on) ID STN2NE10L 100V <0.4Ω 1.8A • Exceptional dv/dt capability ■ Avalanche rugged technology ■ 100% avalanche tested ■ Low threshold drive

N3NF06L

Abstract: STN3NF06L
Contextual Info: STN3NF06L N-channel 60V - 0.07Ω -4A - SOT-223 STripFET II Power MOSFET General features Type VDSS @Tjmax RDS(on) ID STN3NF06L 60V <0.1Ω 4A • Exceptional dv/dt capability ■ Avalanche rugged technology ■ 100% avalanche tested ■ Low threshold drive

N5PF02V

Abstract: JESD97 STN5PF02V
Contextual Info: STN5PF02V P-channel 20V - 0.065Ω - 4.2A - SOT-223 2.5V - Drive STripFET II Power MOSFET General features Type VDSS RDS on ID STN5PF02V 20V <0.080Ω 4.2A • Ultra low threshold gate drive (2.5V) ■ Standard outline for easy automated surface mount assembly

N5PF02V

Abstract: JESD97 STN5PF02V Power MOSFET SOT-223
Contextual Info: STN5PF02V P-channel 20V - 0.065Ω - 4.2A - SOT-223 2.5V - Drive STripFET II Power MOSFET General features Type VDSS RDS on ID STN5PF02V 20V <0.080Ω 4.2A • Ultra low threshold gate drive (2.5V) ■ Standard outline for easy automated surface mount assembly

AP9435GK

Abstract: AP9435 m9080
Contextual Info: AP9435GK Pb Free Plating Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Low On-resistance ▼ Fast Switching G -30V RDS ON 50mΩ ID S SOT-223 BVDSS -6A D Description D The Advanced Power MOSFETs from APEC provide the

ST C 236 DIODE

Abstract: N3NF06L
Contextual Info: STN3NF06L N-channel 60V - 0.07Ω -4A - SOT-223 STripFET II Power MOSFET General features Type VDSS @Tjmax RDS(on) ID STN3NF06L 60V <0.1Ω 4A • Exceptional dv/dt capability ■ Avalanche rugged technology ■ 100% avalanche tested ■ Low threshold drive

ssm9435

Contextual Info: SSM9435K P-CHANNEL ENHANCEMENT-MODE POWER MOSFET Simple drive requirement D Low on-resistance S Fast switching SOT-223 G BV DSS -30V R DS ON 50mΩ -6A ID D Description D Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching,