POWER PHONE Search Results

varicap diodes

Abstract: BIPOLAR TRANSISTOR dual gate mosfet in vhf amplifier hitachi SAW Filter gsm module with microcontroller p channel mosfet Transistors mosfet p channel Mosfet transistor hitachi Low frequency power transistor vhf fet lna
Contextual Info: AMPS Cellular Phone RF Power Amplifier M odules For PA PF0032 Power Module for AMPS Mobile PF0040 Power Module for AMPS Mobile PF0042 Power Module for EAMPS Mobile PF0045A Power Module for AMPS Handheld PF0065 Power Module for AMPS Handheld PF0065A Power Module for AMPS Handheld

DIODE ZENER 3.3V

Abstract: vishay crcw0805 SOD-223 SW415-ND 67-1002-1-ND poe pse injector CRCW0805000Z SOD223 151j CAPACITOR MAX5922
Contextual Info: Maxim > App Notes > HOT-SWAP AND POWER SWITCHING CIRCUITS Keywords: PoE, power-over-ethernet, IEEE 802.3af, power-over-lan, power-sourcing-equipment, PSE, PD, Power Device, IP Phone, Wireless LAN Jun 07, 2005 APPLICATION NOTE 3507 IEEE 802.3af-Compliant Single-Port, Power-Sourcing-Equipment Application

pcf50611

Abstract: handset charger circuit diagram CELL PHONE WALL charger pcf5061 PCF506 Ericsson Battery Backup System
Contextual Info: Longer battery life and smaller PHONES PCF50611 Highly integrated power management unit for mid-range mobile applications The PCF50611 power management unit PMU provides very efficient power generation and offers real-times power management to reduce power consumption and

bgy284e

Abstract: BGY502 BGY288 PHILIPS GSM ic Power Amplifier Module for GSM philips GSM 1800 transceiver pa 900 amplifier UAA3587
Contextual Info: BGY284E GSM/GPRS/EDGE Mobile phone RF power amplifier power amplifier module with integrated power control loop Measuring only 80 mm2, the BGY284E is an ultra-small GSM/GPRS/EDGE power amplifier module with an accurate, integrated power control loop. Combined with

flyback transformer high voltage

Abstract: switching power supply transformer switching power supply transformer construction switch mode power supply flyback transformer hv flyback transformer HV Flyback TRANSFORMERS line output transformer dc line EMI filter transformer
Contextual Info: Power Integrations High-Voltage Analog ICs Reference Design Kit RDK-83 To Speed Power Supply Design 1.6W Cordless Phone Adapter (Power Supply) with 10 kV surge withstand Power Integrations (PI) reference design kit, RDK-83, contains a jump-start power supply design

Contextual Info: BH6178GUL | Power Management IC Series for Mobile Phones | Power Management IC. Page 1 of 2 Site Search 6 Site Map HOME, Products > ICs > Power Management ICs > Power Management IC Series for Mobile Phones > BH6178GUL ICs EEPROMs Data Sheets High-efficiency Power Management IC

2.4GHz Cordless Phone circuit diagram

Abstract: 2.4GHz SiGe Linear Power Amplifier RF Power detector SE2522L SE2522L-EK1 SE2522L-R
Contextual Info: SE2522L RangeCharger 2.4 GHz Power Amplifier And Power Detector IC Preliminary Information Applications Product Description IEEE 802.11b DSSS radios, Wireless LAN 2.4GHz cordless phones, ISM radios Features Integrated power detector circuit High linear output power for IEEE802.11b:

mark e2

Abstract: BH6053GU BH6951GU D312C
Contextual Info: TECHNICAL NOTE Power Management IC Series for Mobile Phones High-efficiency Power Management IC BH6053GU, BH6951GU, BH6952GU zDescription The High-Efficiency Power Management IC is considered to be the best power supply for CPU application. It integrates a

AAAA

Abstract: p0603 CGY96 marking aaa aaa marking code
Contextual Info: GaAs MMIC CGY96 Preliminary Datasheet *Power amplifier for GSM class 4 phones *3.2 W 35dBm output power at 3.5 V *Overall power added efficiency 50 %

NE5520379A

Abstract: NE5520379A-T1 NE5520379A-T1A VP215 ldmos nec
Contextual Info: DATA SHEET SILICON POWER MOS FET NE5520379A 3.2 V OPERATION SILICON RF POWER LDMOS FET FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier

Contextual Info: DATA SHEET SILICON POWER MOS FET NE5520379A 3.2 V OPERATION SILICON RF POWER LD-MOS FET FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier

4012

Contextual Info: RL-4012 SHIELDED SMD POWER INDUCTOR DESCRIPTION FEATURES & APPLICATIONS • Shielded SMD Power Inductor • Surface mount power inductors in a low profile • Excellent as a power inductor used in notebook computers, PDAs, cell phones, step-up or step-down converters, and

NE5520379A

Contextual Info: PRELIMINARY DATA SHEET SILICON POWER MOS FET NE5520379A 3.2 V OPERATION SILICON RF POWER LD-MOS FET FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier

MAX2235

Abstract: MAX2240 MAX2264 MAX2430 MAX2601 MAX2602 TSSOP-EP max2282 UltraChip max2281
Contextual Info: WIRELESS, RF, AND CABLE Nov 01, 2000 Maxim Wireless/RF Power Amplifier Selector Guide An overview of Maxim's RF power amplifier PA products targeted towards cellular, PCS, 802.11b, cordless phone and Bluetooth applications. Table compares operating voltage, supply current, output power, package, power

RL-4012 0

Abstract: RL-4012
Contextual Info: RL-4012 LOW PROFILE SMD POWER INDUCTOR DESCRIPTION FEATURES & APPLICATIONS • Shielded SMD Power Inductor • Surface mount power inductors in a low profile • Excellent as a power inductor used in notebook computers, smartphones, cell phones, step-up or step-down converters,

LD2R2NC

Abstract: CDRH2D18 LD
Contextual Info: POWER INDUCTORS POWER INDUCTORS CDRH2D18/LD M OUTLINE It is a power inductor which corresponds to the power supply application for both laptop PC HDD and W-CDMA cellular phone. Thinner core diameter and thicker wire diameter enables low D.C.R. K DIMENSIONS mm

Contextual Info: RL-4012 SHIELDED SMD POWER INDUCTOR DESCRIPTION FEATURES & APPLICATIONS • Shielded SMD Power Inductor • Surface mount power inductors in a low profile • Excellent as a power inductor used in notebook computers, smartphones, cell phones, step-up or step-down converters,

BGY284

Abstract: BGY502 bgy284e
Contextual Info: BGY284 GSM quad-band amplifier Ultra-small power amplifier module with integrated power control loop Measuring only 64 mm2, the BGY284 is an ultra-small, GSM power-amplifier module with an integrated power control loop. Designed for 850, 900, 1800 and 1900 MHz GSM phones,

Contextual Info: SIEMENS GaAs MMIC CGY96 Preliminary Datasheet *Power amplifier for GSM class 4 phones *3.2 W 35dBm output power at 3.5 V *Overall power added efficiency 50 % *Fully integrated 3 stage amplifier *Single supply operation *Power ramp control *lnput matched to 50 ohms, simple output match

rf detector diode

Abstract: cfdb DIODE RF DETECTOR LMV248 LMV248LQ LMV248LQX RF Directional Couplers
Contextual Info: LMV248 Dual Band GSM Power Controller General Description Features The LMV248 RF power amplifier controller allows simple implementation of transmit power control loops in GSM and DCS/PCS and mobile phones. The LMV248 supports, GaAs HBT and bipolar RF power amplifiers. The device operates

gsm signal amplifier circuit diagram

Abstract: IC internal structure rf detector diodes
Contextual Info: LMV248 Dual Band GSM Power Controller General Description Features The LMV248 RF power amplifier controller allows simple implementation of transmit power control loops in GSM and DCS/PCS and mobile phones. The LMV248 supports, GaAs HBT and bipolar RF power amplifiers. The device operates

GY81

Abstract: c.d.m. technology avx
Contextual Info: SIEMENS CGY 81 GaAs MMIC • • • • • Tri mode power amplifier for AMPS/ CDMA /TDMA portable cellular phones 31 dBm saturated output power @ PAE=55% typ. 29 dBm linear output power PAE=40% typ. Fully integrated 2 stage amplifier Power ramp control

NCP2890FCT1

Abstract: NCP2890DMR2 CRCW0805 NCP2890 TELEGARTNER CONNECTOR 499E
Contextual Info: NCP2890 1.0 Watt Audio Power Amplifier The NCP2890 is an audio power amplifier designed for portable communication device applications such as mobile phone applications. The NCP2890 is capable of delivering 1.0 W of continuous average power to an 8.0 W load from a 5.0 V power

siemens CAPACITOR

Abstract: siemens inductor ACP885 transistor 835 "1u0 1206" D 835 680R BAS40-04W BC848B BCP72
Contextual Info: CGY 0819 GaAs MMIC l l l l l l Tri mode power amplifier for AMPS/ CDMA /TDMA portable cellular phones Dual band operation 31.5 dBm saturated output power @ PAE=55% typ. 29 dBm linear output power@ PAE=40% typ. Two independent amplifier chains Power ramp control