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    POWER SUPPLY CREST FACTOR Search Results

    POWER SUPPLY CREST FACTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    POWER SUPPLY CREST FACTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: NW-B SERIES Specifications: Operating temperature: Temperature coefficient: Storage Temperature: Output: Minimum power: Crest factor: Supply current: Packaging: Input Voltage: Supply sensitivity: Absolute maximum input voltage: -40°C to +85°C surface mount


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    PDF NW5M-AB/12 NW5M-AB/15 200KHzâ NW1G-AB/12 NW1G-AB/15 NW2G-AB/12 NW2G-AB/15 NW3G-AB/12

    Untitled

    Abstract: No abstract text available
    Text: NW-B SERIES Specifications: Operating temperature: Temperature coefficient: Storage Temperature: Output: Minimum power: Crest factor: Supply current: Packaging: Input Voltage: Supply sensitivity: Absolute maximum input voltage: -40°C to +85°C surface mount


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    PDF 200KHz--500MHz 200KHz--1 200KHz--2 200KHz--3 200KHz--4 200KHz--5 200KHz--500

    Untitled

    Abstract: No abstract text available
    Text: NW-B SERIES Specifications: Operating temperature: Temperature coefficient: Storage Temperature: Output: Minimum power: Crest factor: Supply current: Packaging: Input Voltage: Supply sensitivity: Absolute maximum input voltage: 0°C to +70°C surface mount


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    PDF 200KHz--500MHz 200KHz--1 200KHz--2 200KHz--3 200KHz--4 200KHz--5 200KHz--500

    TS4621

    Abstract: RS-232 to i2c converter 3,2nf capacitor EMIF02-AV01F3 GRM188R61E106M TS4621BEIJT TS462 DSASW003741
    Text: TS4621 High performance class G stereo headphone amplifier with I2C volume control Features TS4621BEIJT - flip-chip • Power supply range: 2.3 V to 4.8 V ■ 0.6 mA/channel quiescent current ■ 2.1 mA current consumption with 100 µW/channel 10 dB crest factor


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    PDF TS4621 TS4621BEIJT TS4621 RS-232 to i2c converter 3,2nf capacitor EMIF02-AV01F3 GRM188R61E106M TS462 DSASW003741

    RS-232 to i2c converter

    Abstract: TS4621
    Text: TS4621B High-performance class-G stereo headphone amplifier with I2C volume control Features TS4621BEIJT - flip-chip • Power supply range: 2.3 V to 4.8 V ■ 0.6 mA/channel quiescent current ■ 2.1 mA current consumption with 100 µW/channel 10 dB crest factor


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    PDF TS4621B TS4621BEIJT RS-232 to i2c converter TS4621

    TS4621

    Abstract: TS462 DSASW003740
    Text: STEVAL-CCA025V1 Class G capless headphone amplifier demonstration board based on the TS4621 Data brief Features • Power supply range: 2.3 V to 4.8 V ■ 0.6 mA/channel quiescent current ■ 2.1 mA current consumption with 100 µW/channel 10 dB crest factor


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    PDF STEVAL-CCA025V1 TS4621 TS4621 TS462 DSASW003740

    Untitled

    Abstract: No abstract text available
    Text: TS4621ML High-performance class-G stereo headphone amplifier Datasheet − production data Features TS4621MLEIJT - flip-chip • Power supply range: 2.3 V to 4.8 V ■ 0.6 mA/channel quiescent current ■ 2.1 mA current consumption with 100 µW/channel 10 dB crest factor


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    PDF TS4621ML TS4621MLEIJT

    80Hz

    Abstract: M1650
    Text: TS4621E High-performance class-G stereo headphone amplifier with I2C volume control Features TS4621EIJT - flip-chip • Power supply range: 2.3 V to 4.8 V ■ 0.6 mA/channel quiescent current ■ 2.1 mA current consumption with 100 µW/channel 10 dB crest factor


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    PDF TS4621E TS4621EIJT 80Hz M1650

    MURATA LQM2MPN

    Abstract: TS4621 LQM2MPN MIPSZ2012D3R3 MIPSZ2012 EMIF02-AV01F3 TS4621EIJT 80Hz
    Text: TS4621 High performance class G stereo headphone amplifier with I2C volume control Features TS4621EIJT - flip-chip • Power supply range: 2.3 V to 4.8 V ■ 0.6 mA/channel quiescent current ■ 2.1 mA current consumption with 100 µW/channel 10 dB crest factor


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    PDF TS4621 TS4621EIJT MURATA LQM2MPN TS4621 LQM2MPN MIPSZ2012D3R3 MIPSZ2012 EMIF02-AV01F3 80Hz

    Untitled

    Abstract: No abstract text available
    Text: STEVAL-CCA025V1 Class G capless headphone amplifier demonstration board based on the TS4621E Data brief Features • Power supply range: 2.3 V to 4.8 V ■ 0.6 mA/channel quiescent current ■ 2.1 mA current consumption with 100 µW/channel 10 dB crest factor


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    PDF STEVAL-CCA025V1 TS4621E

    TS4621

    Abstract: No abstract text available
    Text: TS4621ML High-performance class-G stereo headphone amplifier Datasheet − production data Features TS4621MLEIJT - flip-chip • Power supply range: 2.3 V to 4.8 V ■ 0.6 mA/channel quiescent current ■ 2.1 mA current consumption with 100 µW/channel 10 dB crest factor


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    PDF TS4621ML TS4621MLEIJT TS4621

    Untitled

    Abstract: No abstract text available
    Text: RMS to DC CONVERTERS TRUE RMS to DC CONVERTERS MODEL NUMBER Total Error @+25C @Tmax ±mV ± % READING AD536A AD536A AD536A Error Vs Crest Factor CF % Reading CF=3 CF=7 ± 3dB Bandwidth KHZ Input Level Output V rms 10mV 100mV dB Output Error dB Power Supply


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    PDF 100mV 200mV AD536A

    Untitled

    Abstract: No abstract text available
    Text: TS4621E High-performance class-G stereo headphone amplifier with I2C volume control Features • Power supply range: 2.3 V to 4.8 V ■ 0.6 mA/channel quiescent current ■ 2.1 mA current consumption with 100 µW/channel 10 dB crest factor ■ 0.006% typical THD+N at 1 kHz


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    PDF TS4621E TS4621EIJT

    Untitled

    Abstract: No abstract text available
    Text: TS4621B High-performance class-G stereo headphone amplifier with I2C volume control Features • Power supply range: 2.3 V to 4.8 V ■ 0.6 mA/channel quiescent current ■ 2.1 mA current consumption with 100 µW/channel 10 dB crest factor ■ 0.006% typical THD+N at 1 kHz


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    PDF TS4621B TS4621BEIJT

    c502d

    Abstract: AD536AJD AD5536 C 500 D C502D AD536 AD536A AD536AJ AD536AK AD536AS
    Text: a FEATURES True RMS-to-DC Conversion Laser-Trimmed to High Accuracy 0.2% max Error AD536AK 0.5% max Error (AD536AJ) Wide Response Capability: Computes RMS of AC and DC Signals 450 kHz Bandwidth: V rms > 100 mV 2 MHz Bandwidth: V rms > 1 V Signal Crest Factor of 7 for 1% Error


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    PDF AD536AK) AD536AJ) AD536AS) AD536A O-116 O-100 H-10A) AD536A c502d AD536AJD AD5536 C 500 D C502D AD536 AD536AJ AD536AK AD536AS

    4000 watts power amplifier circuit diagram pcb l

    Abstract: Detector "Peak-to-Average Ratio
    Text: HMC614LP4 / 614LP4E v03.0109 RMS & Peak to Average Power Detector 0.1 - 3.9 GHz Typical Applications Features The HMC614LP4 E is ideal for: IPWR Output: Instantaneous Power, Crest Factor Measurement • Log –> Root-Mean-Square (RMS) Conversion RF Signal Wave shape & Crest Factor Independent


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    PDF HMC614LP4 614LP4E 4000 watts power amplifier circuit diagram pcb l Detector "Peak-to-Average Ratio

    rf power detector dynamic range CDMA

    Abstract: automatic heat detector RF Power detector TRANSFORMER RF 4.5-MHz IF ETC1-1-13 H614 HMC610LP4E QAM256
    Text: HMC614LP4 / 614LP4E v04.0309 RMS & Peak to Average Power Detector 0.1 - 3.9 GHz Typical Applications Features The HMC614LP4 E is ideal for: IPWR Output: Instantaneous Power, Crest Factor Measurement • Log –> Root-Mean-Square (RMS) Conversion RF Signal Wave shape & Crest Factor Independent


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    PDF HMC614LP4 614LP4E rf power detector dynamic range CDMA automatic heat detector RF Power detector TRANSFORMER RF 4.5-MHz IF ETC1-1-13 H614 HMC610LP4E QAM256

    IR2520D

    Abstract: IR2520DS IR2520 MS-012AA Application note IR2520D
    Text: Data Sheet No. PD60212 revC IR2520D S & (PbF) ADAPTIVE BALLAST CONTROL IC Packages Features • • • • • • • • • • 600V Half Bridge Driver Integrated Bootstrap FET Adaptive zero-voltage switching (ZVS) Internal Crest Factor Over-Current Protection


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    PDF PD60212 IR2520D IR2520DS IR2520D intern2520D IR2520DS IR2520 MS-012AA Application note IR2520D

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet No. PD60212 Rev B IR2520D S & (PbF) ADAPTIVE BALLAST CONTROL IC Packages Features • • • • • • • • • • 600V Half Bridge Driver Integrated Bootstrap FET Adaptive zero-voltage switching (ZVS) Internal Crest Factor Over-Current Protection


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    PDF PD60212 IR2520D IR2520DS IR2520D sw20D IR2520DS

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet No. PD60212 revC IR2520D S & (PbF) ADAPTIVE BALLAST CONTROL IC Packages Features • • • • • • • • • • 600V Half Bridge Driver Integrated Bootstrap FET Adaptive zero-voltage switching (ZVS) Internal Crest Factor Over-Current Protection


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    PDF PD60212 IR2520D IR2520DS IR2520D swiR2520D IR2520DS

    IR2520D 50 W

    Abstract: IR2520D PD60212 IR2520DS MS-012AA inductive lamp ballast Application note IR2520D BALLAST IR2520D
    Text: Data Sheet No. PD60212 revC IR2520D S & (PbF) ADAPTIVE BALLAST CONTROL IC Packages Features • • • • • • • • • • 600V Half Bridge Driver Integrated Bootstrap FET Adaptive zero-voltage switching (ZVS) Internal Crest Factor Over-Current Protection


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    PDF PD60212 IR2520D IR2520DS IR2520D intern2520D IR2520DS IR2520D 50 W MS-012AA inductive lamp ballast Application note IR2520D BALLAST IR2520D

    C502D

    Abstract: AD536A pt146 AD536 AD536AJ AD536AJD AD536AK AD536AS ad5536 AD536ASH
    Text: a FEATURES True RMS-to-DC Conversion Laser-Trimmed to High Accuracy 0.2% max Error AD536AK 0.5% max Error (AD536AJ) Wide Response Capability: Computes RMS of AC and DC Signals 450 kHz Bandwidth: V rms > 100 mV 2 MHz Bandwidth: V rms > 1 V Signal Crest Factor of 7 for 1% Error


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    PDF AD536AK) AD536AJ) AD536AS) AD536A O-116 O-100 H-10A) AD536A C502D pt146 AD536 AD536AJ AD536AJD AD536AK AD536AS ad5536 AD536ASH

    buf7

    Abstract: AD536AJQ AD536ASD DATASHEET PT146 AD536AJ AD536AK AD536AS AD536 AD536A Absolute Value Circuit
    Text: a FEATURES True RMS-to-DC Conversion Laser-Trimmed to High Accuracy 0.2% Max Error AD536AK 0.5% Max Error (AD536AJ) Wide Response Capability: Computes RMS of AC and DC Signals 450 kHz Bandwidth: V rms > 100 mV 2 MHz Bandwidth: V rms > 1 V Signal Crest Factor of 7 for 1% Error


    Original
    PDF AD536AK) AD536AJ) AD536AS) AD536A O-100 H-10A) O-116 AD536A buf7 AD536AJQ AD536ASD DATASHEET PT146 AD536AJ AD536AK AD536AS AD536 Absolute Value Circuit

    Untitled

    Abstract: No abstract text available
    Text: Tem ic S e m i c o n d u c t o r s List of Symbols A Anode Irrm a Distance in mm I rsm Repetitive peak reverse current Non-repetitive peak reverse current Irw m bpn Normalized power factor Crest working reverse current C Capacitance, general Is Supply current


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