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    POWER SUPPLY LG 32 Search Results

    POWER SUPPLY LG 32 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    POWER SUPPLY LG 32 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LM3661TL-1.25

    Abstract: No abstract text available
    Text: YAGEO CORPORATION ALUMINUM ELECTROLYTIC CAPACITORS Miniature Size Aluminum Electrolytic Capacitors LG [ For 105ºC, 2000 Hours General ] For Printed Circuit Board High-Performance Aluminum Electrolytic Power Supply Input and Output Filter Capacitors SPECIFICATIONS


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    PDF 100VDC 120Hz) 20m/m, 450VDC LM3661TL-1.25

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    Abstract: No abstract text available
    Text: YAGEO CORPORATION ALUMINUM ELECTROLYTIC CAPACITORS Miniature Size Aluminum Electrolytic Capacitors LG [ For 105ºC, 2000 Hours General ] For Printed Circuit Board High-Performance Aluminum Electrolytic Power Supply Input and Output Filter Capacitors SPECIFICATIONS


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    PDF 100VDC 120Hz) 20m/m, 450VDC 340Max.

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    Abstract: No abstract text available
    Text: Yageo corporation ELECTROLYTIC CAPACITORS LG [ For 105°C, 2000 Hours General ] Large Can Aluminum Electrolytic Capacitors For Printed Circuit Board High-Performance Aluminum Electrolytic Power Supply Input and Output Filter Capacitors ELECTRICAL CHARACTERISTICS


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    PDF 100VDC 82000F 120Hz, 20m/m, 120Hz) 120Hz

    LM3661TL-1.25

    Abstract: No abstract text available
    Text: TION ONIC TEAPOCORPORA ELECTR Miniature Size Aluminum Electrolytic Capacitors ALUMINUM ELECTROLYTIC CAPACITORS LG [ For 105ºC, 2000 Hours General ] For Printed Circuit Board High-Performance Aluminum Electrolytic Power Supply Input and Output Filter Capacitors


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    PDF 100VDC 450VDC 120Hz) 20m/m, LM3661TL-1.25

    LH yageo

    Abstract: No abstract text available
    Text: Yageo corporation ELECTROLYTIC CAPACITORS Large Can Aluminum Electrolytic Capacitors LG [ For General ] For Printed Circuit Board High-Performance Aluminum Electrolytic Power Supply Input and Output Filter Capacitors ELECTRICAL CHARACTERISTICS Operating Temperature Range -40 to +105°C


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    PDF 100VDC 450VDC 82000F 2200F 120Hz, 20m/m, 120Hz LH yageo

    1d1107

    Abstract: No abstract text available
    Text: Yageo corporation ELECTROLYTIC CAPACITORS Large Can Aluminum Electrolytic Capacitors LG [ For General ] For Printed Circuit Board High-Performance Aluminum Electrolytic Power Supply Input and Output Filter Capacitors ELECTRICAL CHARACTERISTICS Operating Temperature Range -40 to +105°C


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    PDF 100VDC 82000F 120Hz, 20m/m, CURR45 120Hz 1d1107

    LM3661TL-1.25

    Abstract: No abstract text available
    Text: YAGEO CORPORATION ELECTROLYTIC CAPACITORS Large Can Aluminum Electrolytic Capacitors LG [ For General ] For Printed Circuit Board High-Performance Aluminum Electrolytic Power Supply Input and Output Filter Capacitors ELECTRICAL CHARACTERISTICS Operating Temperature Range -40 to +105°C


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    PDF 100VDC 82000F 120Hz, 20m/m, CURR45 120Hz LM3661TL-1.25

    GM71C4403CJ60

    Abstract: GM71C4403CJ70 GM71C4403CJ-60 LG Semicon GM71C4403C GM71C4403C-60 GM71C4403C-70 GM71C4403C-80 GM71C4403CJ-70 GM71C4403CJ-80
    Text: GM71C4403C LG Semicon Co.,Ltd. 1,048,576 WORDS x 4BIT CMOS DYNAMIC RAM Description Features * 1,048,576 Words x 4 Bit Organization * Extended Data Out Mode Capability * Single Power Supply 5V+/-10% * Fast Access Time & Cycle Time The GM71C4403C is the new generation dynamic


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    PDF GM71C4403C GM71C4403C 300mil GM71C4403CJ60 GM71C4403CJ70 GM71C4403CJ-60 LG Semicon GM71C4403C-60 GM71C4403C-70 GM71C4403C-80 GM71C4403CJ-70 GM71C4403CJ-80

    schematic diagram 230VAC to 24VDC POWER SUPPLY

    Abstract: lg5925 schematic diagram emergency light emergency stop relay LG monitor circuit diagram dold bn 5983 LG5929 7824 7924 7824 lg monitor
    Text: Emergency Stop Relay Type LG 5925 safemaster Features • Category 3 or 4 switch programmable, SIL CL3, PL e • Contacts 4 N/O, 3 N/O 1 N/C, 1 N/O 1 N/C, 2 N/O 5 m gold plated • 22.5 mm wide case • Internal auxiliary power supply protection with automatic reset


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    PDF 24VAC/DC 230VAC req33 schematic diagram 230VAC to 24VDC POWER SUPPLY lg5925 schematic diagram emergency light emergency stop relay LG monitor circuit diagram dold bn 5983 LG5929 7824 7924 7824 lg monitor

    asda-a2

    Abstract: asda AM26CS32 DELTA AC SERVO DRIVE RS232Tx mccb DATASHEET zspd DC24V 200KPPS POWER optocoupler 24V 3A
    Text: DELTA AC Servo System 1 2 Exact! 4 5 6 7 8 D 9 10 R 11 300±50 Dimensions 300±50 A RH KEY DETAILS LG TP T LC Æ Sh6 LBh7 W - 00.03 LS LW LL W k - 0.03 4-Æ LZ SHAFT END DETAILS LE LR Æ LA R 14 LED Display Pulse input, for the use of internal power supply Open-collector input


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    PDF DC24V 200kpps asda-a2 asda AM26CS32 DELTA AC SERVO DRIVE RS232Tx mccb DATASHEET zspd DC24V 200KPPS POWER optocoupler 24V 3A

    fe 1.1s

    Abstract: GM76C512 a 683 transister GM76 GM76C256B GM76C5 cs25-02
    Text: @ LG Semicon. Co., LTD. Description Pin Configuration The GM76C256B is a 262,144 bits static random access memory organized as 32,768 words by 8 bits. Using a 0.8um advanced CMOS technology, it provides high speed operation with minimum cycle time of 55/70/E&s. The device is placed in a low


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    PDF GM76C256B 55/70/E GM76C256BL/BLL 450mil) 55/70/85ns CS250 fe 1.1s GM76C512 a 683 transister GM76 GM76C5 cs25-02

    Olt block diagram

    Abstract: No abstract text available
    Text: PRELIMINARY GM76FV8256/ GM76FU8256/ GM76FS8256 GM76FR8256 262,144WORDSx8BIT CMOS STATIC RAM LG Semicon Co.,Ltd. m Description Features • Power Supply Voltage GM76FV8256 Family : 3.0 ~ 3.6V GM76FU8256 Family : 2.7 ~ 3.3V GM76FS8256 Family : 2.2 ~ 2.7V GM76FR8256 Family : 1.8 ~ 2.2V


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    PDF GM76FV8256/ GM76FU8256/ GM76FS8256 GM76FR8256 144WORDSx8BIT GM76FV8256 GM76FU8256 32-TSOP-I, Olt block diagram

    I9999

    Abstract: No abstract text available
    Text: @ LG Semicon. Co. LTD. Description Features • 1,048,576 Words x 4 Bit Organization • Extended Data Out Mode Capability • Single Power Supply 5V ± 10% • Fast Access Time & Cycle Time The GM71C4403D/DL is the new generation dynamic RAM organized 1,048,576 words x 4 bit.


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    PDF GM71C4403D/DL 300mil 20pin I9999

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY m GM76FV8512/ GM76FU8512/ GM76FS8512 GM76FR8512 524,288 w o r d s x 8 b i t CMOS STATIC RAM LG S e m i c o n C o .,L t d . Description Features • Power Supply Voltage GM76FV8512 Family : 3.0 ~ 3.6V GM76FU8512 Family : 2.7 ~ 3.3V GM76FS8512 Family : 2.2 ~ 2.7V


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    PDF GM76FV8512/ GM76FU8512/ GM76FS8512 GM76FR8512 GM76FV8512 GM76FU8512 76FR8512 32-TSOP-II 55/70/85ns

    64KA

    Abstract: c28e M28C16 iC-MH
    Text: {Z T S G S -T H O M S O N * 7 # . IM I« ilU lg «)iD Ê i M28C16 PARALLEL 16K 2K x 8) EEPROM WITH SOFTWARE DATA PROTECTION • FAST ACCESS TIME: 90ns ■ SINGLE 5V ± 10% SUPPLY VOLTAGE ■ LOW POWER CONSUMPTION ■ FAST WRITE CYCLE: - 64 Bytes Page Write Operation


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    PDF M28C16 TSOP28 M28C16 007732b TSOP28 DD77357 64KA c28e iC-MH

    Untitled

    Abstract: No abstract text available
    Text: ifi» C V lU C D flV 5V/3.3V 32-1250Mbps PROTOCOL INDEPENDENT CLOCK O f IlC /lG f SEMICONDUCTOR R P P n X /P R IM P P H ID H t O U V t H IN U UH IH PREL'M“ '' SY87701V DESCRIPTION FEATURES • 3.3V and 5V power supply options The SY87701V is a com plete Clock Recovery and Data


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    PDF 32-1250Mbps SY87701V SY87701V 25Gbps

    GM71C4403CJ60

    Abstract: No abstract text available
    Text: @ LG Semicon. Co. LTD Description Features • 1,048,576 Words x 4 Bit Organization • Extended Data Out Mode Capability • Single Power Supply 5V ± 10% • Fast Access Time & Cycle Time The GM71C4403C is the new generation dynamic R A M o rg a n iz e d 1 ,0 4 8 ,5 7 6 w o rd s x 4 b it.


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    PDF GM71C4403C 71C4403C 300mil 00055Qb GM71C4403CJ60

    TEA2164

    Abstract: TEA2028B TV11 tv11 capacitor 2T19 AN409 u1511 ST Microelectronics Bipolar Transistor TEA2028 37T7
    Text: / I T S C S -T H O M S O N *• 7 # » R ilO lg ls D it U K g in M lM g g TEA2164 SWITCH MODE POWER SUPPLY PRIMARY CIRCUIT ■ POSITIVE AND NEGATIVE OUTPUT CUR­ RENT UP T 0 1 2A AND - 1.7A ■ A TWO LEVEL COLLECTOR CURRENT LIMI­ TATION ■ COMPLETE TURN OFF AFTER LONG DURA­


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    PDF TEA2164 theTEA2164control TEA2164 DQ75b4T TEA2028B TV11 tv11 capacitor 2T19 AN409 u1511 ST Microelectronics Bipolar Transistor TEA2028 37T7

    Untitled

    Abstract: No abstract text available
    Text: G Z 7 * • 7 I . S G S - T H O M S O N T D E 1 8 9 0 6 » f lB » lllL II r a ® iD lg i T D E 1 8 9 1 2A HIGH-SIDE DRIVER INDUSTRIAL INTELLIGENT POWER SWITCH PRELIMINARY DATA . • . . ■ ■ . . ■ ■ ■ 2A OUTPUT CURRENT 18V TO 35V SUPPLY VOLTAGE RANGE


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    PDF TDE1890/1891 PowerS020â 007555b

    Untitled

    Abstract: No abstract text available
    Text: @ LG Semicon. Co. LTD Description Features The GMM7322130BMS/SG is an 2M x 32 bits Dynamic RAM MODULE w hich is assembled 4 pieces of 2M x 8bit DRAMs in 28 pin SOJ package on single sides the p rin te d c irc u it board w ith d e co u p lin g capacitors. The GMM7322130BMS/SG is


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    PDF GMM7322130BMS/SG GMM7322130BMS/SG GMM7322130BMS GMM7322130BMSG

    GM76C256B

    Abstract: GM76C256BLL 22-VCS lg power supply diagram
    Text: @ LG Semicon. Co. LTD Description Pin Configuration The GM76C256B is a 262,144 bits static random access memory organized as 32,768 words by 8 bits. Using a 0.8«m advanced CMOS technology, it provides high speed operation with minimum cycle time of 55/70/85ns. The device is placed in a low


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    PDF GM76C256B 55/70/85ns. GM76C256BL/BLL 28-pin 600mil) 450mil) 55/70/85ns 55mWMax. GM76C256BLL 22-VCS lg power supply diagram

    Untitled

    Abstract: No abstract text available
    Text: @ LG Semicon. Co. LTD. Description Features The GMM7321010DS/SG is an 1M x 32 bits D y n a m ic R A M M O D U L E w h ic h is assem bled 8 pieces o f 1M x 4bit EDO DRAMs in 20/26 pin SOJ package on single sides the printed circuit board with decoupling capacitors. The GM M 7321010DS/SG is


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    PDF GMM7321010DS/SG 7321010DS/SG GMM7321010DS/SG GMM7321010DS GMM7321010DSG 111in 11111n

    Untitled

    Abstract: No abstract text available
    Text: @ LG Semicon. Co. LTD Description Features The GMM7324200ANS/SG is a 4M x 32 bits Dynamic RAM MODULE which is assembled 8 pieces of 4M x 4bits DRAMs in 24/26 pin SOJ package on both sides the printed circuit board with decoupling capacitors. The GMM7324200ANS/SG is


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    PDF GMM7324200ANS/SG GMM7324200ANS/SG GMM7324200ANS GMM7324200ANSG 1111111111111111111111l

    GMM7321000AN

    Abstract: No abstract text available
    Text: _ ü _ LG Semicon. Co. LTD Description Features The GMM7321000ANS/SG is an 1M x 32 bits Dynamic RAM MODULE which is assembled 2 pieces of 1M x 16bit DRAMs in 42 pin SOJ package on single sides the printed circuit board with decoupling capacitors. The GMM7321000ANS/SG is


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    PDF GMM7321000ANS/SG 16bit GMM7321000ANS/SG GMM7321OOOANS -GMM7321000ANSG 8888888m D0Qb212 GMM7321000AN