POWER TRANSISTOR 200V, 30A Search Results

IRFP250 application

Abstract: irfp250 application note datasheet irfp250 mosfet IRFP250 irfp250 applications TA9295 TB334
Contextual Info: IRFP250 Data Sheet January 2002 33A, 200V, 0.085 Ohm, N-Channel Power MOSFET Features • 33A, 200V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

powertech

Abstract: 200v 5a transistor
Contextual Info: "BIG IDEAS IN BIG POWER” • PowerTech 70 AMPERES PT-7509 SILICON NPN TRANSISTOR MAXIMUM RATINGS PT-7509 SYMBOL Collector-Base Voltage 200V V CBO Collector-Emitter Voltage 200V V CEO Emitter-Base Voltage 10V V EBO Peak Collector Current 'cm * 70A D.C. Collector Current

transistor IRFP250

Contextual Info: IRFP250 Data Sheet Title FP2 bt A, 0V, 85 m, 33A, 200V, 0.085 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

Contextual Info: WILLAS FM120-M+ MMBT2907ADW1T1 THRU Transistor Dual General 1.0A SURFACE MOUNT Purpose SCHOTTKY BARRIER RECTIFIERS -20V- 200V FM1200-M+ Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.

O247

Abstract: O-247 STY60NA20 STY60NA
Contextual Info: STY60NA20  N - CHANNEL 200V - 0.030Ω - 60 A - Max247 FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STY60NA20 V DSS R DS on ID 200 V < 0.032 Ω 60 A TYPICAL RDS(on) = 0.030 Ω EFFICIENT AND RELIABLE MOUNTING THROUGH CLIP ± 30V GATE TO SOURCE VOLTAGE RATING

Contextual Info: STY60NA20 N - CHANNEL 200V - 0.030ft - 60 A - Max247 FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE S TY60N A20 • . . . . . . . V dss R dS oii Id 200 V < 0.032 Q. 60 A TYPICAL RDS(on) = 0.030 EFFICIENT AND RELIABLE MOUNTING THROUGH CLIP ± 30V GATE TO SOURCE VOLTAGE RATING

Max247TM

Abstract: STY60NA20
Contextual Info: STY60NA20  N - CHANNEL 200V - 0.030Ω - 60 A - Max247 FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STY60NA20 • ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 200 V < 0.032 Ω 60 A TYPICAL RDS(on) = 0.030 Ω EFFICIENT AND RELIABLE MOUNTING THROUGH CLIP

Contextual Info: STY60NA20 N - CHANNEL 200V - 0.030Q - 60 A - Max247 FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STY60NA20 V dss R D S o n Id 200 V < 0 .0 32 Q 60 A • TYPICAL Rds(oh) = 0.030 Q m EFFICIENT AND RELIABLE MOUNTING THROUGH CLIP . ± 30V GATE TO SOURCE VOLTAGE RATING

Contextual Info: MITSUBISHI TRANSISTOR MODULES QM30HQ-24 DRIVE USE FOR HIGH POWER TRANSISTOR INSULATED TYPE QM30HQ-24 Ic Collector current. 30A Vcex Collector-emitter voltage 1200V hFE DC current gain. 5 Insulated Type

Contextual Info: International i?I] Rectifier HEXFRED P D -2 .3 7 8 Provisional Data Sheet HFA35HB60C 600V, 30A ULTRA FAST, SOFT RECOVERY DIODE Features: Major Ratings and Characteristics 600 V lF AV 30 A trr (per leg) 60 ns Qrr (per leg) 180 nC — — — — — —

Contextual Info: MITSUBISHI TRANSISTOR MODULES QM30TB-24 MEDIUM POWER SWITCHING USE INSULATED TYPE QM30TB-24 Ic Collector current. 30A Vcex Collector-emitter voltage 1200V hFE DC current gain. 75 Insulated Type UL Recognized

RURP3020

Abstract: RURP3010
Contextual Info: H A R R IS S E M I C O N D U C T O R RURP3010, RURP3015 RURP3020 30A, 100V - 200V Ultrafast Diodes Decem ber 1993 Package Features • Ultrafast with Soft Recovery Characteristic tRR < 45ns JEOEC T0-220AC TOP VIEW uO • +175°C Rated Junction Temperature

Contextual Info: MITSUBISHI TRANSISTOR MODULES QM30TB-24B MEDIUM POWER SWITCHING USE INSULATED TYPE QM30TB-24B Ic Collector current. 30A Vcex Collector-emitter voltage 1200V hFE DC current gain.750 Insulated Type UL Recognized

Contextual Info: D 000 PWR-82331 and PWR-82333 ILC DATA DEVICE ^ CORPORATION _ SMART POWER 3-PHASE MOTOR DRIVES FEATURES DESCRIPTION APPLICATIONS The PWR-82331 and PWR-82333 are 30A 3-phase motor drive hybrids. The PWR-82331 has a 200V rating and uses MOSFETs in the output stage while the

RURP3010

Abstract: RURP3015 RURP3020 power transistor 200V, 30A
Contextual Info: RURP3010, RURP3015, RURP3020 S E M I C O N D U C T O R 30A, 100V - 200V Ultrafast Diodes April 1995 Features Package • Ultrafast with Soft Recovery Characteristic tRR < 45ns JEDEC TO-220AC ANODE • +175oC Rated Junction Temperature CATHODE CATHODE (FLANGE)

Contextual Info: 000 PWR-82331 and PWR-82333 ILC DATA DEVICE _ _ CORPORATION_ SMART POWER 3-PHASE MOTOR DRIVES FEATURES DESCRIPTION APPLICATIONS The PWR-82331 and PWR-82333 are 30A 3-phase motor drive hybrids. The PW R-82331 has a 200V rating and uses MOSFETs in the output stage while the

transistor A2

Abstract: tb 120 RURH3010CC RURH3015CC RURH3020CC
Contextual Info: RURH3010CC, RURH3015CC, RURH3020CC S E M I C O N D U C T O R 30A, 100V - 200V Ultrafast Dual Diodes April 1995 Features Package • Ultrafast with Soft Recovery Characteristic tRR < 45ns JEDEC TO-218AC ANODE1 CATHODE ANODE2 • +175oC Rated Junction Temperature

Contextual Info: ASSESS? RURH3010CC, RURH3015CC, RURH3020CC 30A, 100V - 200V Ultrafast Dual Diodes April 1995 Features Package • Ultrafast with Soft Recovery Characteristic tRR < 45ns JEDEC TO-218AC ANODE1 CATHODE ANODE2 • +175°C Rated Junction Temperature • Reverse Voltage Up to 200V

"Power Diode" 200V 30A

Abstract: RURD3010 RURD3015 RURD3020 RURD3040 diode 200v 30a 200V30A 200V 30A TRANSISTOR
Contextual Info: H A RR IS S E M I C O N D SE CT OR RURD3010 RURD3015 RURD3020 HARRIS SbE D • IHAS 4 3 0 2 27 1 G G 4 2 4 1 2 1SD 30A Ultrafast Dual Diode With Soft Recovery Characteristic M ay 1991 TO-218AC TOP VIEW Ultrafast with Soft Recovery Characteristic trr < 45ns

brush dc motor control 200v 20a

Contextual Info: PWR-82340 and PWR-82342 ILC DATA DEVICE CORPORATION_ _ _ SMART POWER H-BRIDGE MOTOR DRIVES FEATURES DESCRIPTION The PWR-82340 and PWR-82342 are 30A H-bridge motor drive hybrids. The PWR-82340 has a 200V rating and uses M O SFETs in the output stage while the

Contextual Info: C fJ H A R R RURH3010CC, RURH3015CCt RURH3020CC I S s e m i c o n d u c t o r 30A, 100V - 200V Ultrafast Dual Diodes April 1995 Package Features • Ultrafast with Soft Recovery Characteristic ‘ r r < 45ns JE D E C TO -218A C ANODE1 CATHODE ANODE2 • +175°C Rated Junction Temperature

DSA0039858

Abstract: BAZ-3882-NCAZ RURH3020CC TA09645
Contextual Info: RURH3020CC Data Sheet January 2000 File Number 2773.4 30A, 200V Ultrafast Dual Diode Features The RURH3020CC is an ultrafast dual diode trr < 45ns with soft recovery characteristics. It has a low forward voltage drop and is of planar, silicon nitride passivated,

RURP3020

Abstract: TA09645
Contextual Info: RURP3020 Data Sheet January 2000 File Number 2777.5 30A, 200V Ultrafast Diode Features The RURP3020 is an ultrafast diode trr < 45ns with soft recovery characteristics. It has a low forward voltage drop and is of planar, silicon nitride passivated, ion-implanted,

TA09645

Abstract: RURH3020CC DUAL ULTRAFAST RECTIFIER "Power Diode" 200V 30A 0104L switching circuits
Contextual Info: interdi RURH3020CC Data S he et J a n u a r y 2000 30A, 200V Ultra fast Dual Diode Features F ile N u m b e r 2773.4 The RURH3020CC is an ultrafast dual diode t^ < 45ns • Ultrafast with Soft Recovery. <45ns with soft recovery characteristics. It has a low forward