POWER TRANSISTOR-12V DC Search Results

MLP832

Abstract: ZXTDA1M832 ZXTDA1M832TA ZXTDA1M832TC IC 630 marking DA1
Contextual Info: ZXTDA1M832 MPPS Miniature Package Power Solutions DUAL 15V NPN & 12V PNP LOW SATURATION TRANSISTOR COMBINATION SUMMARY NPN Transistor PNP Transistor VCEO = 15V; RSAT = 45m ; C = 4.5A VCEO = -12V; RSAT = 60m ; C = -4A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP Micro Leaded Package ,

Contextual Info: 2SB1732 / 2SB1709 Datasheet PNP -1.5A -12V Middle Power Transistor lOutline Parameter Value TUMT3 -12V -1.5A VCEO IC TSMT3 Collector Collector Base Base Emitter Emitter 2SB1709 SC-96 2SB1732 lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SD2702, 2SD2674

Contextual Info: 2SD2702 / 2SD2674 Datasheet NPN 1.5A 12V Middle Power Transistor lOutline Parameter Value VCEO IC TUMT3 TSMT3 Collector Collector 12V 1.5A Base Base Emitter Emitter 2SD2674 SC-96 2SD2702 lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SB1732, 2SB1709

MLP832

Abstract: ZX3CD1S1M832 ZX3CD1S1M832TA ZX3CD1S1M832TC 0001M10
Contextual Info: ZX3CD1S1M832 MPPS Miniature Package Power Solutions 12V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY PNP Transistor Schottky Diode VCEO =-12V; RSAT = 65m ; C = -4A VR = 40V; VF = 500mV @1A ; IC=1A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP this combination dual

MLP832

Abstract: ZX3CD1S1M832 ZX3CD1S1M832TA ZX3CD1S1M832TC
Contextual Info: ZX3CD1S1M832 MPPS Miniature Package Power Solutions 12V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY PNP Transistor Schottky Diode VCEO =-12V; RSAT = 65m ; C = -4A VR = 40V; VF = 500mV @1A ; IC=1A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP this combination dual

2SC2312

Abstract: 27mhz transistor 27mhz rf ic A7 NPN EPITAXIAL A7 transistor transistor A7 RF POWER TRANSISTOR npn epitaxial planar high voltage transistor FET Transistor Structure mitsubishi vcb
Contextual Info: MITSUBISHI SILICON TRANSISTOR RF POWER TRANSISTOR' 2SC2312 27MHz,12V, 17W NPN Epitaxial •MITSUBISHI ELECTRIC CORP. Planar Type GENERAL DISCRIPTION ' MITSUBISHI 2SC2312 is a silicon NPN epitaxial planar type transistor specifically designed for linear amplifiers operating

Contextual Info: 2SB1697 Datasheet PNP -2A -12V Middle Power Transistor lOutline Parameter Value VCEO IC -12V -2A MPT3 Base Collector Emitter 2SB1697 SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SD2661 3) Low VCE(sat) VCE(sat)= -0.18V(Max.)

Contextual Info: 2SD2661 Datasheet NPN 2A 12V Middle Power Transistor lOutline Parameter Value VCEO IC 12V 2A MPT3 Base Collector Emitter 2SD2661 SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SB1697 3) Low VCE(sat) VCE(sat)=0.18V(Max.)

TS16949

Abstract: ZXTN25012EFH ZXTP25012EFH ZXTP25012EFHTA
Contextual Info: ZXTP25012EFH 12V, SOT23, PNP medium power transistor Summary BVCEO > -12V hFE > 500 IC cont = 4A RCE(sat) = 40m⍀ VCE(sat) < -65mV @ 1A PD = 1.25W Complementary part number ZXTN25012EFH Description C Advanced process capability and package design have been used to

zxtn25012efh

Abstract: transistor 1.25W
Contextual Info: ZXTN25012EFH 12V, SOT23, NPN medium power transistor Summary BVCEO > 12V BVECX > 6V hFE > 500 IC cont = 6A VCE(sat) < 32mV @ 1A RCE(sat) = 23m⍀ PD = 1.25W Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline

MLP832

Abstract: ZXTD1M832 ZXTD1M832TA ZXTD1M832TC
Contextual Info: ZXTD1M832 MPPS Miniature Package Power Solutions DUAL 12V PNP LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO= -12V; RSAT = 60m ; IC= -4A DESCRIPTION Packaged in the innovative 3mm x 2mm MLP Micro Leaded Package outline, these new 4th generation low saturation dual transistors offer

27mhz rf ic

Abstract: 2SC1944 T30 transistor 27mhz transistor 27mhz rf amplifier T-30
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC1944 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1944 is a silicon NPN epitaxial planar type transistor Dimension in mm designed for RF power amplifiers on HF bandmobile radio applications. FEATURES • High power gain : Gpe S 11 dB, @ Vcc = 12V, f = 27MHz,

27mhz rf amplifier

Abstract: 27mhz rf ic NTE236 27mhz HF SSB APPLICATIONS 27mhz rf amplifier NPN transistor HF power amplifier 12v class d amplifier 20W 27mhz transistor
Contextual Info: NTE236 Silicon NPN Transistor Final RF Power Output PO = 16W, 27MHz, SSB Description: The NTE236 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on HF band mobile radio applications. Features: D High Power Gain: Gpe ≥ 12dB (VCC = 12V, PO = 16W, f = 27MHz)

27mhz rf ic

Abstract: 27mhz rf amplifier NPN transistor 27mhz rf amplifier NTE236 12v class d amplifier 20W 27mhz transistor 27MHz power amplifier
Contextual Info: NTE236 Silicon NPN Transistor Final RF Power Output PO = 16W, 27MHz, SSB Description: The NTE236 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on HF band mobile radio applications. Features: D High Power Gain: Gpe ≥ 12dB (VCC = 12V, PO = 16W, f = 27MHz)

pHEMT transistor 360

Abstract: powerband
Contextual Info: T1P2701012-SP 10 W, 12V, 500 MHz—3GHz, PowerbandTM pHEMT RF Power Transistor Introduction The T1P2701012-SP is a POWERBANDTM discrete pHEMT, depletion mode, RF Power transistor designed to operate from 500MHz to 3GHz in wide-band circuits. The device has an instantaneous band-width P1dB output power of 10watts across

2sc2166

Contextual Info: Product Specification 2SC2166 Silicon NPN Power Transistor DESCRIPTION ・High Power Gain: Gpe≥ 13.8dB @f= 27MHz, PO= 6W; VCC= 12V ・High Reliability APPLICATIONS ・Designed for 3 to 4 watts output power amplifiers in HF band mobile radio applications.

2SD2144S

Abstract: 2SD2114K SC-72 T146
Contextual Info: 2SD2114K / 2SD2144S Transistors High-current Gain Medium Power Transistor 20V, 0.5A 2SD2114K / 2SD2144S zExternal dimensions (Unit : mm) zFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat).

Contextual Info: 2SD2537 Datasheet NPN 1.2A 25V Middle Power Transistor lOutline Parameter Value VCEO IC 25V 1.2A MPT3 Base Collector Emitter 2SD2537 SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) High DC Current gain hFE= 820 to 1,800 3) High VEBO VEBO=12V(Min.)

FMMT717

Abstract: FMMT717QTA transistor marking 72m MARKING CODE 717
Contextual Info: A Product Line of Diodes Incorporated FMMT717 12V PNP SILICON POWER SWITCHING TRANSISTOR IN SOT23 PACKAGE Features Mechanical Data • • • • • • • • • • • • • • • • 625mW Power dissipation -2.5A Continuous collector current

Contextual Info: Medium Power Transistor 25V, 1.2A 2SD2537 Features 1) High DC current gain. 2) High emitter-base voltage. (VEBO=12V) 3) Low saturation voltage. (Max. VCE(sat)=0.3V at IC/IB=500mA/10mA) Dimensions (Unit : mm) 2SD2537 2.5 4.0 Absolute maximum ratings (Ta=25°C)

TRANSISTOR C107

Abstract: transistor c107 m c107 transistor 2144S 2SD2144S 96-232-C107 IC-2700
Contextual Info: I High-current gain Medium Power Transistor 20V, 0.5A 2SD2114K/2SD2144S •E xternal dimensions (Units: mm) •F eatures 1) High DC current gain. hFE = 1200 (Typ) 2) 2.9±0.2 1.1 High emitter-base voltage, Vebo = 12V 3) 2SD2114K +0.2 - 0.1 0.8± 0.1 (Min.)

2SD2227

Abstract: 2SD2537 2SD2171S 2SD2226K 2SD2227S 2SD2351 T100 T106 T146 marking bj
Contextual Info: 2SD2537 / 2SD2171S 2SD2351 / 2SD2226K / 2SD2227S Transistors I Medium Power Transistor 25V, 1.2A 2SD2537 / 2SD2171S •Features •Absolute maximum ratings (Ta=25'C) 1 ) High DC current gain. 2 ) High emitter-base voltage. (Vcbo= 12V Min.) 3 ) Low Vce(ml). (Max, 0.3V at lc/le=500/10mA)

2SD2537

Abstract: T100
Contextual Info: 2SD2537 Transistors Medium Power Transistor 25V, 1.2A 2SD2537 zFeatures 1) High DC current gain. 2) High emitter-base voltage. (VEBO=12V) 3) Low saturation voltage. (Max. VCE(sat)=0.3V at IC/IB=500mA/10mA) zDimensions (Unit : mm) 2SD2537 2.5 4.0 zAbsolute maximum ratings (Ta=25°C)

BF 235

Abstract: plc em 235 ZTX1147 ZTX1147A DSA003763
Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1147A ISSUE 1 - JANUARY 1997 FEATURES * VCEO= -12V * 4 Amp Continuous Current * 20 Amp pulse Current * Low Saturation Voltage * High Gain C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER