POWERMAC Search Results

1N4148

Abstract: 2N4427 2N5109 2N5179 2N6255 MRF4427 MRF553 MRF5943C MRF607
Contextual Info: MRF553 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 175 MHz Characteristics Output Power = 1.5 W Minimum Gain = 11.5 dB Efficiency 60% Typ Cost Effective PowerMacro Package Electroless Tin Plated Leads for Improved Solderability

Contextual Info: MRF557 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 870 MHz Characteristics Output Power = 1.5 W Minimum Gain = 8 dB Efficiency 60% Typ Cost Effective PowerMacro Package Electroless Tin Plated Leads for Improved Solderability

hp server mtbf

Abstract: OC-3118 AM 5888 OC314 EN50082-1 A00-A1F
Contextual Info: ISA 16/4 ADAPTER OC-3118 Featuring Olicom’s latest Dedicated Token-Ring DTR PowerMACHTM drivers, the ISA16/4 adapter is a Token-Ring network interface card for ISA-bus computers that can help boost LAN performance by providing greater throughput, more

2N4427

Abstract: 2N5109 2N5179 2N6255 MRF4427 MRF553 MRF555 MRF5943C MRF607
Contextual Info: MRF555 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 470 MHz Characteristics Output Power = 1.5 W Minimum Gain = 11 dB Efficiency 60% Typ Cost Effective PowerMacro Package Electroless Tin Plated Leads for Improved Solderability

AM 5888

Abstract: OC-3145 OC314 IBM server mtbf EN50082-1 TI380C30 8025R
Contextual Info: 3137ROW 1/10/4 11:31 PM Page 1 PCI/II 16/4 ADAPTER OC-3137 Features • Optimized, high-performance, full- • • • • • • • • duplex DTR PowerMACH drivers for Novell, IBM, Microsoft and Unix network operating systems Automatically identifies shielded

Contextual Info: MRF555 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 470 MHz Characteristics Output Power = 1.5 W Minimum Gain = 11 dB Efficiency 60% Typ Cost Effective PowerMacro Package Electroless Tin Plated Leads for Improved Solderability

Contextual Info: MRF555 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 470 MHz Characteristics Output Power = 1.5 W Minimum Gain = 11 dB Efficiency 60% Typ Cost Effective PowerMacro Package Electroless Tin Plated Leads for Improved Solderability

2N4427

Abstract: 2N5109 2N5179 2N6255 MRF4427 MRF553 MRF557 MRF5943C MRF607
Contextual Info: MRF557 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 870 MHz Characteristics Output Power = 1.5 W Minimum Gain = 8 dB Efficiency 60% Typ Cost Effective PowerMacro Package Electroless Tin Plated Leads for Improved Solderability

CL-GD5465

Abstract: RD5106 vga to pal video convertor ic planar YUV display input 160x64 gd5465 D147 Crystal Oscillator 8574t 5FDT cirrus logic cl-gd
Contextual Info: . CL-GD5465 CIRRUS LOGIC • Preliminary Data Book FEATURES • 64-bit graphics engine with integrated 3D game acceleration — — — — — — — — — — — — — — — Perspective textures mapping FilterJet fast bilinear filtering Lit, copy, decal, and blend textures

AN938

Abstract: motorola AN938 motorola rf Power Transistor MRF557 MRF557/D
Contextual Info: MOTOROLA Order this document by MRF557/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Low Power Transistor MRF557 Designed primarily for wideband large signal predriver stages in the 800 MHz frequency range. • Specified @ 12.5 V, 870 MHz Characteristics

BFR91 transistor

Abstract: 2N5109 BFR90 transistor BFR91 BFR96 datasheet for transistor bfr96 mrf559 v mrf5812 equivalent MRF586 transistor bfr96
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF557 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 870 MHz Characteristics Output Power = 1.5 W Minimum Gain = 8 dB

MRF553G

Abstract: 1N4148 diode 2N5179 mrf544 1N4148 2N4427 2N5109 2N6255 MRF4427 MRF553
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF553 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS MRF553G * G Denotes RoHS Compliant, Pb Free Terminal Finish Features • • • • • • Specified @ 12.5 V, 175 MHz Characteristics

Contextual Info: MOTOROLA O rder this docum ent by MRF553/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Low Pow er Transistor MRF553 Designed primarily for wideband large signal predriver stages in the VHF frequency range. • Specified @ 12.5 V, 175 MHz Characteristics

Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF555 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 470 MHz Characteristics Output Power = 1.5 W Minimum Gain = 11 dB

AEC7720U

Abstract: AEC7720UW ATP880 AEC-67160 scsi cable adapter AEC67160 AHA1542B 68 pin Connector AEC-7720U
Contextual Info: AEC-67160 Ultra160 PCI Ultra160 SCSI Adapter for PC User ’s Manual Ver:1.0 Copyright ACARD Technology Corp. Ver:1.0.20010723.67160 AEC-67160 Ultra160 SCSI Adapter Contents Chapter 1 Introduction . 4

maxtor hard disk

Abstract: AEC-6860M
Contextual Info: AHARD RAID 66 AEC-6860M PCI-to-IDE RAID 0 Controller for Mac IDE Hard Drives User’ s Manual Version 1.0 Copyright 2000 Copyright and Trademarks Information The information of product in this manual is subject to change without prior notice and does not represent a commitment on part of the vendor,

ide 40 pins to scsi 50 pins hard drive

Abstract: AEC7720U AEC6712TUM 50 pins ide connector AEC7720UW C500 AEC6712WM C600 68 pin scsi 68pin SCSI connector
Contextual Info: AEC-6712WM/6712TUM PCI Ultra/Ultra Wide SCSI Adapter for Macintosh User ’s Manual Ver:1.0 Copyright ACARD Technology Corp. Table of Contents Chapter 1 Introduction . 4

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Low Pow er Transistor Designed prim arily for wideband large signal predriver stages in the 800 MHz frequency range. • Specified @ 12.5 V, 870 MHz Characteristics Output Power = 1.5 W Minimum Gain = 8.0 dB

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line N PN Silicon RF Low Power Transistor D e signed primarily for wideband large signal predriver stage s in the U H F frequency range. • Specified @ 12.5 V, 470 M H z Characteristics @ P out = 1.5 W C om m on Emitter Pow er G ain = 12;5 dB Typ

transistor 2469

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Low Power Transistor Designed primarily for w ideband large signal predriver stages in the V H F frequency range. • Specified @ 12.5 V, 175 M H z Characteristics O utput Pow er = 1 .5 W 1.5 W, 175 MHz

MRF557

Contextual Info: MOTOROLA • i SEMICONDUCTOR TECHNICAL DATA MRF557 The RF Line NPN Silicon RF Low Power TVansistor . . . designed primarily for wideband large signal predriver stages in the 800 MHz frequency range. • Specified @ 12.5 V, 870 MHz Characteristics Output Power = 1.5 W

HARDDISK CONTROLLER

Abstract: HARDDISK manual HITACHI microcontroller H8S family SH7700 h8 family SH7000 SH7600 free computer hardware notes
Contextual Info: Hitachi Electronic Components Databook Edition 4.0 , March ‘96, Windows and Macintosh Version Content: • General Information - How to use the Hitachi Electronic Data Book - About the Hitachi Electronic Data Book - Safety Considerations • Microcontroller Data Book

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

Apple

Abstract: imac "USB" peripheral "EZ-USB"
Contextual Info: iMac Development for the EZ-USB Family Introduction http://www.metrowerks.com Apple Computer's iMac has been receiving great market response since its introduction in August of 1998. The machine won top market share in both the United States and in Japan.