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    POWERMESH MOSFET Search Results

    POWERMESH MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    POWERMESH MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRF7305

    Abstract: irf730 transistor IRF730 JESD97 Application of irf730
    Text: IRF730 N-channel 400V - 0.75Ω - 5.5A TO-220 Powermesh II Power MOSFET General features Type VDSS RDS on ID IRF730 400V <1Ω 5.5A • Exceptional dv/dt capability ■ 100% avalanche tested ■ Low gate charge 3 1 Description TO-220 The PowerMESH™II is the evolution of the first


    Original     		PDF IRF730 O-220 IRF7305 irf730 transistor IRF730 JESD97 Application of irf730

    IRF730

    Abstract: Application of irf730
    Text: IRF730 N-channel 400V - 0.75Ω - 5.5A TO-220 Powermesh II Power MOSFET General features Type VDSS RDS on ID IRF730 400V <1Ω 5.5A • Exceptional dv/dt capability ■ 100% avalanche tested ■ Low gate charge 3 1 Description 2 TO-220 The PowerMESH™II is the evolution of the first


    Original     		PDF IRF730 O-220 O-220 IRF730 Application of irf730

    irf730

    Abstract: No abstract text available
    Text: IRF730 N-CHANNEL 400V - 0.75Ω - 5.5A TO-220 PowerMESH II MOSFET TYPE IRF730 • ■ ■ ■ VDSS RDS on ID 400 V <1Ω 5.5 A TYPICAL RDS(on) = 0.75Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 3 1 DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area


    Original     		PDF IRF730 O-220 O-220 irf730

    transistor IRF730

    Abstract: IRF730
    Text: IRF730 N-CHANNEL 400V - 0.75Ω - 5.5A TO-220 PowerMESH II MOSFET TYPE IRF730 • ■ ■ ■ VDSS RDS on ID 400 V <1Ω 5.5 A TYPICAL RDS(on) = 0.75Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 3 1 DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area


    Original     		PDF IRF730 O-220 transistor IRF730 IRF730

    IRF730

    Abstract: No abstract text available
    Text: IRF730 N-CHANNEL 400V - 0.75Ω - 5.5A TO-220 PowerMESH II MOSFET TYPE IRF730 • ■ ■ ■ VDSS RDS on ID 400 V < 1Ω 5.5 A TYPICAL RDS(on) = 0.75Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 3 1 DESCRIPTION The PowerMESHII is the evolution of the first generation of MESH OVERLAY . The layout refinements introduced greatly improve the Ron*area


    Original     		PDF IRF730 O-220 IRF730

    STP7NC40

    Abstract: No abstract text available
    Text: STP7NC40 N-CHANNEL 400V - 0.75Ω - 6A TO-220 PowerMESH II MOSFET TYPE VDSS RDS on ID STP7NC40 400 V <1Ω 6A TYPICAL RDS(on) = 0.75Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE • ■ ■ ■ 3 1 DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area


    Original     		PDF STP7NC40 O-220 STP7NC40

    STP7NC40

    Abstract: No abstract text available
    Text: STP7NC40 N-CHANNEL 400V - 0.75Ω - 6A TO-220 PowerMESH II MOSFET • ■ ■ ■ TYPE VDSS RDS on ID STP7NC40 400 V < 1Ω 6A TYPICAL RDS(on) = 0.75Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 3 1 DESCRIPTION The PowerMESHII is the evolution of the first generation of MESH OVERLAY . The layout refinements introduced greatly improve the Ron*area


    Original     		PDF STP7NC40 O-220 STP7NC40

    STP7NC40

    Abstract: No abstract text available
    Text: STP7NC40 N-CHANNEL 400V - 0.75Ω - 6A TO-220 PowerMESH II MOSFET • ■ ■ ■ TYPE VDSS RDS on ID STP7NC40 400 V <1Ω 6A TYPICAL RDS(on) = 0.75Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 3 1 DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area


    Original     		PDF STP7NC40 O-220 STP7NC40

    DC/AC to DC smps circuit diagram

    Abstract: STB19NB20 DSASW003744
    Text: STB19NB20 N-CHANNEL 200V - 0.150Ω - 19A D2PAK PowerMESH MOSFET TYPE VDSS RDS on ID STB19NB20 200 V <0.180 Ω 19 A TYPICAL RDS(on) = 0.150 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED


    Original     		PDF STB19NB20 DC/AC to DC smps circuit diagram STB19NB20 DSASW003744

    P2NC70

    Abstract: STD1NC70Z STD1NC70Z-1 STD1NC70ZT4 STP2NC70Z STP2NC70ZFP p2nc70zfp Zener diode smd marking T4 D1NC70Z
    Text: STP2NC70Z, STP2NC70ZFP STD1NC70Z, STD1NC70Z-1 N-CHANNEL 700V - 7.3Ω - 1.4A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH III MOSFET TYPE STP2NC70Z STP2NC70ZFP STD1NC70Z STD1NC70Z-1 • ■ ■ ■ ■ VDSS RDS on 700 700 700 700 < 8.5 < 8.5 < 8.5 < 8.5


    Original     		PDF STP2NC70Z, STP2NC70ZFP STD1NC70Z, STD1NC70Z-1 O-220/FP/DPAK/IPAK STP2NC70Z STD1NC70Z O-220 P2NC70 STD1NC70Z STD1NC70Z-1 STD1NC70ZT4 STP2NC70Z STP2NC70ZFP p2nc70zfp Zener diode smd marking T4 D1NC70Z

    P3N150

    Abstract: FV3N150 W3N150
    Text: STFV3N150 STP3N150 - STW3N150 N-channel 1500V - 8Ω - 2.5A - TO-220 - TO-220FH - TO-247 Very high voltage PowerMESH Power MOSFET TARGET SPECIFICATION General features Type VDSS RDS on ID Pw STP3N150 1500V <12Ω 2.5A 140W STFV3N150 1500V <12Ω 2.5A 30W


    Original     		PDF STFV3N150 STP3N150 STW3N150 O-220 O-220FH O-247 O-220 P3N150 FV3N150 W3N150

    p7nc80zf

    Abstract: P7NC80Z B7NC80Z
    Text: STP7NC80Z - STP7NC80ZFP STB7NC80Z - STB7NC80Z-1 N-CHANNEL 800V - 1.3Ω - 6.5A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH III MOSFET TYPE STP7NC80Z STP7NC80ZFP STB7NC80Z STB7NC80Z-1 • ■ ■ ■ ■ VDSS RDS on 800 800 800 800 < < < < V V V V 1.5 Ω


    Original     		PDF STP7NC80Z STP7NC80ZFP STB7NC80Z STB7NC80Z-1 O-220/FP/D2PAK/I2PAK O-220 p7nc80zf P7NC80Z B7NC80Z

    STU16NC50

    Abstract: No abstract text available
    Text: STU16NC50 N-CHANNEL 500V - 0.22Ω - 16A Max220 PowerMesh II MOSFET TYPE STU16NC50 VDSS RDS on ID 500V < 0.27Ω 16 A TYPICAL RDS(on) = 0.22Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED • ■


    Original     		PDF STU16NC50 Max220 STU16NC50

    STU11NC60

    Abstract: No abstract text available
    Text: STU11NC60 N-CHANNEL 600V - 0.48Ω - 11A Max220 PowerMesh II MOSFET TYPE STU11NC60 VDSS RDS on ID 600V < 0.55Ω 11 A TYPICAL RDS(on) = 0.48Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED • ■


    Original     		PDF STU11NC60 Max220 STU11NC60

    p7nc80zf

    Abstract: p7nc80 P7NC80Zfp p7nc80z B2 Zener P7NC L9 Zener STB7NC80Z STB7NC80Z-1 STB7NC80ZT4
    Text: STP7NC80Z - STP7NC80ZFP STB7NC80Z - STB7NC80Z-1 N-CHANNEL 800V - 1.3Ω - 6.5A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH III MOSFET TYPE STP7NC80Z STP7NC80ZFP STB7NC80Z STB7NC80Z-1 • ■ ■ ■ ■ VDSS RDS on 800 800 800 800 < < < < V V V V 1.5 Ω


    Original     		PDF STP7NC80Z STP7NC80ZFP STB7NC80Z STB7NC80Z-1 O-220/FP/D2PAK/I2PAK STP7NC80Z STB7NC80Z O-220 p7nc80zf p7nc80 P7NC80Zfp p7nc80z B2 Zener P7NC L9 Zener STB7NC80Z-1 STB7NC80ZT4

    irf740

    Abstract: power MOSFET IRF740 irf740 mosfet irf740 application IRF740 400V 10A
    Text: IRF740 N-channel 400V - 0.46Ω - 10A TO-220 PowerMESH II Power MOSFET General features Type VDSS @Tjmax RDS(on) ID IRF740 400V <0.55Ω 10A • Exceptional dv/dt capability ■ 100% avalanche tested ■ Low gate charge ■ Very low intrinsic capacitances


    Original     		PDF IRF740 O-220 O-220 IRF740 IRF740@ power MOSFET IRF740 irf740 mosfet irf740 application IRF740 400V 10A

    mosfet 1500v

    Abstract: L7 diode STFV4N150 STMicroelectronics DIODE marking code FV4N150 JESD97 Vdss 1500V
    Text: STFV4N150 N-channel 1500V - 5Ω - 4A TO-220FH Very high voltage PowerMESH MOSFET General features Type VDSS RDS on ID Pw STFV4N150 1500V <0.7Ω 4A 40W • Avalanche ruggedness ■ Gate charge minimized ■ Very low intrinsic capacitances ■ High speed switching


    Original     		PDF STFV4N150 O-220FH O-220 mosfet 1500v L7 diode STFV4N150 STMicroelectronics DIODE marking code FV4N150 JESD97 Vdss 1500V

    STU13NC50

    Abstract: No abstract text available
    Text: STU13NC50 N-CHANNEL 500V - 0.31Ω - 13A Max220 PowerMesh II MOSFET TYPE STU13NC50 VDSS RDS on ID 500V < 0.4 Ω 13 A TYPICAL RDS(on) = 0.31Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED • ■


    Original     		PDF STU13NC50 Max220 STU13NC50

    STD1LNC60

    Abstract: No abstract text available
    Text: STD1LNC60 N-CHANNEL 600V - 12Ω - 1A - IPAK/DPAK PowerMESH II MOSFET TYPE STD1LNC60 VDSS RDS on ID 600 V < 15 Ω 1A TYPICAL RDS(on) = 12 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED • ■


    Original     		PDF STD1LNC60 O-252 O-251t STD1LNC60

    IRFP250

    Abstract: irfp250 applications irfp250 mosfet IRFP250 m
    Text: IRFP250 N-CHANNEL 200V - 0.073Ω - 33A TO-247 PowerMesh II MOSFET TYPE IRFP250 VDSS RDS on ID 200V < 0.085Ω 33 A TYPICAL RDS(on) = 0.073Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED • ■


    Original     		PDF IRFP250 O-247 IRFP250 irfp250 applications irfp250 mosfet IRFP250 m

    IRF7405

    Abstract: irf740 irf740 mosfet power MOSFET IRF740 IRF740 application TO-220 DATASHEET IRF740 transistor equivalent irf740 JESD97
    Text: IRF740 N-channel 400V - 0.46Ω - 10A TO-220 PowerMESH II Power MOSFET General features Type VDSS @Tjmax RDS(on) ID IRF740 400V <0.55Ω 10A • Exceptional dv/dt capability ■ 100% avalanche tested ■ Low gate charge ■ Very low intrinsic capacitances


    Original     		PDF IRF740 O-220 IRF7405 irf740 irf740 mosfet power MOSFET IRF740 IRF740 application TO-220 DATASHEET IRF740 transistor equivalent irf740 JESD97

    STW9N150

    Abstract: JESD97 W9N150V
    Text: STW9N150 N-channel 1500V - 2.2Ω - 8A - TO-247 Very high voltage PowerMESH Power MOSFET TARGET SPECIFICATION General features Type VDSS RDS on ID Pw STW9N150 1500V < 2.7Ω 8A 350W • 100% avalanche tested ■ Avalanche ruggedness ■ Gate charge minimized


    Original     		PDF STW9N150 O-247 STW9N150 JESD97 W9N150V

    SMD zener diode 202

    Abstract: d1nc7 STD1NC70Z STD1NC70Z-1 STD1NC70ZT4 STP2NC70Z STP2NC70ZFP p2nc
    Text: STP2NC70Z, STP2NC70ZFP STD1NC70Z, STD1NC70Z-1 N-CHANNEL 700V - 7.3Ω - 1.4A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH III MOSFET TYPE STP2NC70Z STP2NC70ZFP STD1NC70Z STD1NC70Z-1 • ■ ■ ■ ■ VDSS RDS on 700 700 700 700 < 8.5 < 8.5 < 8.5 < 8.5


    Original     		PDF STP2NC70Z, STP2NC70ZFP STD1NC70Z, STD1NC70Z-1 O-220/FP/DPAK/IPAK STP2NC70Z STD1NC70Z O-220 SMD zener diode 202 d1nc7 STD1NC70Z STD1NC70Z-1 STD1NC70ZT4 STP2NC70Z STP2NC70ZFP p2nc

    3l4 diode

    Abstract: No abstract text available
    Text: STD5NB30 N - CHANNEL 300V - 0.75 n - 5A - DPAK PowerMESH MOSFET TYPE STD5NB30 • . . . . . V dss R dS oii Id 300 V < 0.9 Q. 5 A TYPICAL RDS(on) = 0.75 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED


    OCR Scan     		PDF STD5NB30 O-252 0068772-B 3l4 diode