PPJA3430 Search Results
PPJA3430 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: PPJA3430 20V N-Channel Enhancement Mode MOSFET – ESD Protected Voltage 20 V SOT-23 2A Current Unit: inch mm Features RDS(ON) , VGS@4.5V, ID@2.0A<150mΩ RDS(ON) , VGS@2.5V, ID@1.5A<215mΩ RDS(ON) , VGS@1.8V, ID@0.5A<400mΩ Advanced Trench Process Technology |
Original |
PPJA3430 OT-23 2011/65/EU IEC61249 OT-23 MIL-STD-750, 2013-REV | |
|
Contextual Info: PPJA3430 20V N-Channel Enhancement Mode MOSFET – ESD Protected Voltage 20 V SOT-23 2A Current Unit: inch mm Features RDS(ON) , VGS@4.5V, ID@2.0A<150mΩ RDS(ON) , VGS@2.5V, ID@1.5A<215mΩ RDS(ON) , VGS@1.8V, ID@0.5A<400mΩ Advanced Trench Process Technology |
Original |
PPJA3430 OT-23 2011/65/EU IEC61249 OT-23 MIL-STD-750, 2013-REV | |
|
Contextual Info: PPJA3430 20V N-Channel Enhancement Mode MOSFET – ESD Protected Voltage 20 V SOT-23 2A Current Unit: inch mm Features RDS(ON) , VGS@4.5V, ID@2.0A<150mΩ RDS(ON) , VGS@2.5V, ID@1.5A<215mΩ RDS(ON) , VGS@1.8V, ID@0.5A<400mΩ Advanced Trench Process Technology |
Original |
PPJA3430 OT-23 2011/65/EU IEC61249 OT-23 MIL-STD-750, 2013-REV |