PQ-45 GHZ Search Results

Contextual Info: PQ-45 Analog Diode Phase Shifters Features • Octave bands up to 18 GHz • Fast Phase responce as low as 10 nS • RF power operation 10 mW peak/CW, RF power survival 100 mW peak/CW • Bias connection using pin or connector options • Custom configurations available

Contextual Info: PQ-45 Analog Diode Phase Shifters Features • Octave bands up to 18GHz • Fast Phase responce as low as 10nS • RF power operation 10mW peak/CW, RF power survival 100mW peak/CW • Bias connection using pin or connector options • Custom configurations available

BFY90

Abstract: 73180 Tfk 880 BFy 90 transistor
Contextual Info: Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon NPN Epitaxial Planar RF Transistor Anwendungen: Allgem ein bis in den GHz-Bereich Applications: General up to the GHz range Besondere Merkmale: Features: • Leistungsverstärkung 8 dB 800 MHz • Power gain 8 dB (800 MHz)

Contextual Info: TOSHIBA M ICROW AVE POWER MICROWAVE SEMICONDUCTOR GaAs FET T IM 5359-30L TECHNICAL DATA FEATURES : • HIGH GAIN G u b = 8.5 dB at 5.3 GHz to 5.9 GHz ■ LOW INTERM ODULATIO N DISTORTION I M 3 = —45 dBc at Po = 34.5 dBm, Single Carrier Level ■ BROAD BAND INTERNALLY MATCHED

AN 17821

Abstract: AN 17821 A PO 111 oki marking CQ 629 KGF1607 8958 fet
Contextual Info: O K I Semiconductor KGF1607_ GaAs Ceramic Power FET for FM and FDMA Cellular Applications D E S C R IP T IO N The KGF1607 is a high-power, high-efficiency GaAs power FET that features high gain at high current w ith the ultra-low impedance drive required for cellular, ISM, PHS and PCS applications. This device is

pa 66 gf

Abstract: mixer RHG J FET AM LNA D218 T2901 TQFP48
Contextual Info: Temic T2901 S e m i c o n d u c t o r s Bluetooth Single-Chip Transceiver IC Description The T2901 is a bipolar intergrated circuit manufactured using TEMIC Semiconductors’ advanced UHF process. This IC includes a transceiver for the 2.45 GHz ISM band especially for Bluetooth applications.

transistor RCA 383

Abstract: RCA 7163 TA8647 rca 383 transistor RCA H 715 transistor C4 0168 RCA microwave oscillator TA8648 transistor amplifier 1ghz 1500 watts rca h 641
Contextual Info: File No. 641 RF Power Transistors Solid State Division 41025 41026 3-W and 10-W 1-GHz E m itter-B allasted Silicon N -P-N O verlay Transistors F o r Use in U H F /M ic ro w a v e C o m m o n -E m itte r Pow er A m p lifie rs , Oscillators, and Freq u en cy M u ltip liers

MRA1214-55H

Abstract: MRA1214-55
Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA M RA1214-55H The RF Line Microwave Power Transistor . . designed p rim a rily fo r w id e b an d , large-signal o u tp u t and d riv e r a m p lifie r stages in the 1.2 to 1.4 GHz fre q u e n cy range. 6.5 dB 1.2-1.4 GHz

adaa

Abstract: ACAA ABAA "temperature controller" Arrayed Waveguide Grating optical fiber G.653
Contextual Info: Alcatel 1912 AWG 16 channels 100 GHz DWDM Multiplexers/ DeMultiplexers Description Features The Alcatel 1912 AWG Arrayed Waveguide Grating is designed for DWDM systems and belongs to a family of high performance optical routing devices. This component offers an

rca 40290

Abstract: RCA 2N3866 rca 40280 2N5070 60890 2N4932 2n4933 rca 2N5070 2N5913 N4012
Contextual Info: RF Power Transistors A w ide variety o f rf types capable o f h andling a broad range¡of power from hf to m ic ro w a v e frequencies 25, W at 30 MHz to 1 W at 1 GHz , sup- Applications E ie~nm H T ft 7o I T0-60, and TO-72 packages. . l - and S-band radar and telem etry

Contextual Info: <Semi-Condaato\ fine. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 2N5943 The RF Idne 1.2 GHz -50 mAde NPN SILICON HIGH-FREQUENCY TRANSISTOR NPN SILICON HIGH-FREQUENCY TRANSISTOR NPN SILICON

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaA$ FET> .minM* w M GFC40V6472A 6 .4 — 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G FC 40V 6472A isan internally impedance-matched GaAs power FET especially designed fo r use in 6 . 4 —7 .2 GHz band amplifiers. The hermetically sealed metal-ceramic

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRW54001 MRW54601 The RF Line M icrowave Linear Power Transistors . . . designed primarily for large-signal output and driver amplifier stages in the 1.0 to 4.0 GHz frequency range. • Designed for Class A or AB, Common-Emitter Linear Power Amplifiers

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line Microw ave Power Transistor . . . designed for CW and long pulsed common base amplifier applications, such as JTIDS and Mode S, In the 0.96 to 1.215 GHz frequency range at high overall duty cycles. • Guaranteed Performance @ 1.215 GHz, 28 Vdc

rf21261

Abstract: RF2126 schematic diagram DC POWER SUPPLY power supply schematic 60v
Contextual Info: RFEÜ RF2126 MICRO-DEVICES H IG H POW ER L IN E A R A M P L IF IE R T y p ic a l A p p lic a t io n s • 2.5 GHz ISM Band Applications • Commercial and Consumer Systems • Digital Communication Systems • Portable Battery Powered Equipment 2 POWER AMPLIFIERS

ceramic capacitor Eurofarad X7R

Abstract: CEC CAPACITORS EUROFARAD capacitor datasheet ceramique EUROFARAD cec cea 271 EUROFARAD EUROFARAD CAPACITORS datasheet EUROFARAD datasheet CECC32101
Contextual Info: CONDENSATEURS CHIPS CERAMIQUE HYPERFREQUENCE MICROWAVE CERAMIC CHIP CAPACITORS SOMMAIRE SUMMARY Généralités sur les chips céramique multicouches hyperfréquence Feuilles particulières sur les chips céramique multicouches hyper. Généralités sur les condensateurs céramique monocouches hyper.

facon capacitors

Abstract: CEC CAPACITORS resistor codification EUROFARAD EUROFARAD CAPACITORS datasheet EUROFARAD cec EUROFARAD cec 14 cec 2r0 1 CEW65 E24-E48-E96
Contextual Info: CONDENSATEURS CHIPS CERAMIQUE HYPERFREQUENCE MICROWAVE CERAMIC CHIP CAPACITORS SOMMAIRE SUMMARY Généralités sur les chips céramique multicouches hyperfréquence Feuilles particulières sur les chips céramique multicouches hyper. Généralités sur les condensateurs céramique monocouches hyper.

Contextual Info: RFH RF2126 MICRO DEVICES HIGH POWER LINEAR AM PLIFIER T y p ic a l A p p lic a tio n s • 2.5 GHz ISM Band Applications • Commercial and Consumer Systems • Digital Communication Systems • Portable Battery Powered Equipment 2 A M P L IF IE R S • PCS Communication Systems

Contextual Info: RFH RF2126 MICRO DEVICES HIGH POWER LINEAR AM PLIFIER T y p ic a l A p p lic a tio n s • 2.5 GHz ISM Band Applications • Commercial and Consumer Systems • Digital Communication Systems • Portable Battery Powered Equipment 2 P r o d u c t D e s c r ip tio n

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFC39V5964A So«1' Q 5 .9 ~ 6 .4 G H z BAND 8 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 3 9 V 5 9 6 4 A is an internally im pedance-matched GaAs power F E T especially designed for use in 5 .9 —6 .4 GHz band amplifiers. The hermetically sealed metal-ceramic

Contextual Info: Tem ic U2801B S e m i c o n d u c t o r s DECT Single Chip Transceiver Description The U2801B is an RF IC for low-power DECT applica­ tions. The TQFP48-packaged IC is a complete transceiver including image rejection mixer, IF amplifier, FM demodulator, baseband filter, RSSI, TX preamplifier,

Contextual Info: Tem ic U2801B S e m i c o n d u c t o r s DECT Single-Chip Transceiver Description The U2801B is an RF IC for low-power DECT applica­ tions. The TQFP48-packaged IC is a complete transceiver including image rejection mixer, IF amplifier, FM demodulator, baseband filter, RSSI, TX preamplifier,

transistor D 2578

Abstract: BFQ34
Contextual Info: DISCRETE SEMICONDUCTORS BFQ34 NPN 4 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Sem iconductors PHILIPS Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION

lfsn30n17c

Abstract: DIL00 T2901-FYT LFSN30N17 VCO PARA UHF D218 T2901 TQFP48
Contextual Info: Temic T2901 S e m i c o n d u c t o r s Bluetooth Single-Chip Transceiver IC Description The T2901 is a bipolar intergrated circuit manufactured using TEMIC Semiconductors’ advanced UHF process. This IC includes a transceiver for the 2.45 GHz ISM band especially for Bluetooth applications.