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MJ10007

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10007’ Designer’s Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode •Motorola Pr«f*rr«d Otvlet 10 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS

transistor mj10005

Abstract: 440 motorola
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M J10005* D esigner’s Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistor w ith B ase-E m itter Speedup Diode "Motorola Pr*f*rr*d D«vic« 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad 2 -In p u t XOR G ate M C 74VH C 86 The MC74VHC86 is an advanced high speed CMOS 2-input Exclusive-OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similarto equivalent Bipolar Schottky TTL while maintaining

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA O ctal Bus B uffer/Line D river M C 74V H C T240A In vertin g w ith 3 -S ta te O utputs The MC74VHCT240A is an advanced high speed CM OS octal bus buffer fabricated with silicon gate C M O S technology. It achieves high speed

Contextual Info: MOTOROLA Order this document by MBRD1035CTL/D SEMICONDUCTOR TECHNICAL DATA Advance Information M BRD1035CTL SWITCH MODE S chottky Power R ectifier DPAK Power Surface Mount Package . . employing the Schottky Barrier principle in a large area m e tal-to-silicon

Contextual Info: MOTOROLA Order this document by 1N5820/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet 1N5820 1N5821 1N5822 A xial Lead R ectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. S ta te -o f-th e -a rt geometry features chrome barrier metal,

Nippon capacitors

Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA Order this document by HC705C5TSAD/D Rev. 1 MC68HC705C5 Addendum to MC68HC705C5 8-Bit Microcontroller Unit Technical Summary This addendum supplements the M C 68H C 705C 5 Technical Summ ary with additional information

B1035CL

Abstract: MBRD1035CTL pr diode motorola B1035
Contextual Info: MOTOROLA Order this document by MBRD1035CTL/D SEMICONDUCTOR TECHNICAL DATA Advance Information SWITCHMODE Schottky Power Rectifier MBRD1035CTL DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon

1N5827

Abstract: 1N5828 1N5826 1N5827 equivalent 1N5828 equivalent
Contextual Info: MOTOROLA Order this document by 1N5826/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet 1N5826 1N5827 1N5828 Power Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal,

FULL WAVE RECTIFIER CIRCUITS

Abstract: schottky rectifier motorola mbr THERMAL RUNAWAY IN RECTIFIER TP2050 1N5820-D 1N5820 1N5821 1N5822
Contextual Info: MOTOROLA Order this document by 1N5820/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet 1N5820 1N5821 1N5822 Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal,

1N5628

Abstract: 12115X marking AB SOD123 1N5828
Contextual Info: 1N5826 1N5827 1N5828 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N582S and 1N5828 are Motorola Preferred Devices Designer’s Data Sheet Power Rectifiers SCHOTTKY BARRIER RECTIFIERS . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode.

1N5831

Abstract: E5 sot223 1N5829
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N5829 1N5830 1N5831 Designer's Data Sheet Switchm ode Power Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal

FULL WAVE bridge RECTIFIER CIRCUITS

Abstract: 1N5822 1N5820 1N5821 TP2050 1N5820-D Motorola 1N5820
Contextual Info: MOTOROLA Order this document by 1N5820/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet 1N5820 1N5821 1N5822 Designer's Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal,

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Low -V oltage Q uiet CMOS O ctal Buffer Flow Through Pinout M C 74LVQ 541 LVQ 3 -S ta te , N on-Inverting The MC74LVQ541 is a high performance, non-inverting octal buffer operating from a 2.7 to 3.6V supply. This device is similar in function to the

1N5831

Abstract: MN5830 1n5829 MN5829 1N5631 1N5830
Contextual Info: MOTOROLA SC DIODES/OPTO b4E D • b3b7ESS 00flb27S 7bT « M O T ? MOTOROLA ■ I SEMICONDUCTOR TECHNICAL DATA 1N 5829 1N 5830 1N5831 M BR5831H, H1 Designer's Data Sheet S w itc h m o d e P o w e r R e c tifie rs . employing the Schottky Barrier principle in a large area metal-to-silicon power

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA L o w -V o ltag e Q uiet CMOS O ctal Transceiver M C74LVQ 245 LVQ 3 -S ta te , N on-Inverting The MC74LVQ245 is a high performance, non-inverting octal transceiver operating from a 2.7 to 3.6V supply. The MC74LVQ245 is

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M M FT107T1 Medium Power Field Effect Transistor Motorola Pr*f*rr*d Devio* N-Channel Enhancement-Mode Silicon Gate TMOS SOT-223 for Surface Mount M ED IU M POW ER TM O S FET 250 m A, 200 VOLTS R D S on = 14 OHM MAX This TM O S m edium pow er field effect transistor is designed for

R/mc785.2ct motorola

Abstract: MR821 MR822 MR824 R820 mc785.2ct motorola
Contextual Info: ——-—-—. I $;~~: ~~~~v]]j~]jj:,~- J~~ Ffls’.r . . R :G 3’\!ER~f designed inverters, ence and rectifiers for special converters, free wheeling high efficiency applications Designer’s <,;.?- jtib~w,. I 1.1-T~: :-w m such as dc power systems, diodes.

PC MOTHERBOARD oi CIRCUIT diagram

Contextual Info: F A IR C H IL D s e m ic o n d u c t o r w w w .fa irc h ild se m i.c o m tm RC5037 Adjustable Switching Regulator Controller Description • High power switched-mode DC-DC controller can control in excess of 13 A • Output voltage adjustable from 1.5V to 3.6V

MC12149

Abstract: MC12149D 10KHZ MA393 MC42149 OTEK Nippon capacitors
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Low Power Voltage Controlled Oscillator Buffer MC42149 The MCI 2149 is intended for applications requiring high frequency signal generation up to 1300MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO is realized using

IRL3103

Contextual Info: FA IR C H IL D www.fairchildsemi.com Ml C O N D U C T O R RC5031 Adjustable Switching Regulator Description • High power switched-mode DC-DC controller can source in excess of 13 A • Output voltage adjustable from 1.5V to 3.6V • 85% efficiency • Cumulative accuracy <3% over line, load, temperature

TI3H

Abstract: DL203 MC74VHC MC74VHCU04 TAG9 G100B
Contextual Info: M O TO RO LA SEMICONDUCTOR TECHNICAL DATA H ex In verter M C74VH CU 04 U n b u ffe re d The MC74VHCU04 is an advanced high speed CMOS unbuffered inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining

MGV12N120D

Abstract: PD123 tme 126
Contextual Info: MOTOROLA Order this document by MGV12N120D/D SEMICONDUCTOR TECHNICAL DATA e Product Preview Data Sheet MGVI2NI 20D Insulated Gate Bipolar mansistor with Anti-ParaMUei Diode N<hannel I Enhancement Mode Silicon Gate IGBT & DIODE IN D3~# 12A @ 90:$.&~;es 20 ~ @ 2$~.<:j, ~~~

demultiplexer 1 to 4 outputs HF

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA L o w -V o ltag e Q uiet CMOS 1 -o f-8 D ecoder/D em ultiplexer M C74LVQ 138 LVQ The MC74LVQ138 is a high performance, 1-of-8 decoder/ demultiplexer operating from a 2.7 to 3.6V supply. High impedance TTL compatible inputs significantly reduce current loading to input drivers