PR SOT23 Search Results

KRA222S

Contextual Info: SEMICONDUCTOR KRA222S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 PR 1 2 Item Marking Description Device Mark PR KRA222S hFE Grade - - * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

CX28250-23

Abstract: CX28250-26 GR-253-CORE RS8250 cx8250
Contextual Info: Re vie w eli mi na ry CX28250 Differences between the RS8250-16 and the CX28250-23/-26 Pr Application Note 500386A July 2002 Revision History Date A — July 2002 Description Re vie w Level Created. Pr eli mi na ry Revision 2001, 2002, Mindspeed Technologies , a Conexant business

8322 Series

Abstract: nichicon pr LMT 2902 D NEC schottky diode product List S-8321 S-8321A S-8321AJMP-DNJ-T2 S-8321AOMP-DNO-T2 S-8321B S-8322
Contextual Info: DI SC ON TI NU E D PR OD Features . 1 Applications . 1 Block Diagram . 2 Selection Guide . 2

S-80942ANMP-DD6-T2

Abstract: S-80945ANMP-DD9-T2 transistor sc 5586 80945ALMP-DA9 2060od transistor c 5586 dac 809 S-80935ALMP-DAZ-T2 S-80945ALMP-DA9-T2 ultra low voltage detector
Contextual Info: DI SC ON TI NU E D PR OD Features . 1 Applications . 1 Pin Assignment . 1 Block Diagram . 1

80846

Abstract: Edd 44 S-80811ANNP-E71-T2 s-80841anup seiko 320 240 S-808 S-80808ANNP-E7Y-T2 S-80809ANNP-E7Z-T2 S-80810ANNP-E70-T2 S-80812ANNP-E72-T2
Contextual Info: DI SC ON TI NU E D PR OD Features . 1 Applications . 1 Pin Assignment . 1 Block Diagram . 2

Voltage Output Temperature Sensor

Abstract: S-8110AMP
Contextual Info: DI SC ON TI NU E D PR OD Features . 1 Block Diagram . 1 Pin Assignment . 1 Absolute Maximum Ratings . 2

S-8120AMP

Contextual Info: DI SC ON TI NU E D PR OD Features . 1 Block Diagram . 1 Pin Assignment . 1 Absolute Maximum Ratings . 2

Contextual Info: FS8853-DS-24_EN Datasheet MAY 2010 Pr RT Re op UN fe ert E’ re ie nc s e O nl y REV. 2.4 FS8853 Fo r FO 300 mA LDO Linear Regulator FS8853 Fo r FO Pr RT Re op UN fe ert E’ re ie nc s e O nl y Fortune Semiconductor Corporation 富晶電子股份有限公司

marking DW01

Abstract: DW01* MARKING dw01 sot-23-6
Contextual Info: DW01+-DS-26_EN Datasheet JUL 2010 Pr RT Re op UN fe ert E’ re ie nc s e O nl y REV. 2.6 DW01+ Fo r FO One Cell Lithium-ion/Polymer Battery Protection IC DW01+ Fo r FO Pr RT Re op UN fe ert E’ re ie nc s e O nl y Fortune Semiconductor Corporation 富晶電子股份有限公司

Contextual Info: FS8205-DS-14_EN Datasheet AUG 2010 Pr RT Re op UN fe ert E’ re ie nc s e O nl y REV. 1.4 FS8205 Fo r FO Dual N-Channel Enhancement Mode Power MOSFET FS8205 Fo r FO Pr RT Re op UN fe ert E’ re ie nc s e O nl y Fortune Semiconductor Corporation 富晶電子股份有限公司

Contextual Info: MMBR5179LT1 RF & MICROWAVE TRANSISTORS DESCRIPTION KEY FEATURES ! High FTau-1.4GHz EL PR The MMBR5179LT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-4.5dB@200MHz ! Low cost SOT23 package

MMBR911LT1

Abstract: MMBR911MLT1
Contextual Info: MMBR911MLT1 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MMBR911MLT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-2.9dB@1GHz ! Low cost SOT23 package

Contextual Info: MMBR911MLT1 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MMBR911MLT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-2.9dB@1GHz ! Low cost SOT23 package

MMBR5179LT1

Contextual Info: MMBR5179LT1 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MMBR5179LT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-4.5dB@200MHz ! Low cost SOT23 package

MRF9411MLT1

Contextual Info: MMBR941MLT1/MRF9411MLT1 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MMBR941MLT1/MRF9411MLT1 are low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-1.3dB@1GHz ! Low cost SOT23/SOT143

Contextual Info: MMBR5179LT1 RF & MICROWAVE TRANSISTORS RF PRODUCTS DIVISION DESCRIPTION KEY FEATURES E PR The MMBR5179LT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages.  Low noise-4.5dB@200MHz  Low cost SOT23 package

Contextual Info: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BSS123A ISSUE 4 -A PR IL 1998_ FEATURES * BVdss = 100V * Low Threshold PARTMARKING D ETAIL - SAA ABSOLUTE M AXIM UM RATINGS. PARAMETER SYMBOL Drain-Source Voltage V p s Drain-Gate Voltage

C705A

Abstract: marking codes pd C705C CMPD7005 CMPD7005A CMPD7005C CMPD7005S marking code diode R1
Contextual Info: Y RCMPD7005 A IN IM EL Central CMPD7005A CMPD7005C CMPD7005S PR TM Semiconductor Corp. DESCRIPTION: The Central Semiconductor CMPD7005, CMPD7005A, CMPD7005C and CMPD7005S are silicon switching diodes with various diode configurations, manufactured by the epitaxial

C706A

Abstract: marking code diode 14 C706S CMPD7006 CMPD7006A CMPD7006C CMPD7006S D232
Contextual Info: Y RCMPD7006 A IN IM EL Central CMPD7006A CMPD7006C CMPD7006S PR TM Semiconductor Corp. DESCRIPTION: The Central Semiconductor CMPD7006, CMPD7006A, CMPD7006C and CMPD7006S are silicon switching diodes with various diode configurations, manufactured by the epitaxial

Contextual Info: MMBR911LT1 RF & MICROWAVE TRANSISTORS DESCRIPTION KEY FEATURES ! High FTau-6.0 GHz EL PR The MMBR911LT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-2.9dB@1GHz ! Low cost SOT23 package IMPORTANT: For the most current data, visit: http://www.advancedpower.com

Contextual Info: MMBR911LT1 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MMBR911LT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-2.9dB@1GHz ! Low cost SOT23 package IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

Contextual Info: BFR92ALT1 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The BFR92ALT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-3.0dB@500MHz ! Low cost SOT23 package IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

TVS in SOT-23

Abstract: TVS SOT-23
Contextual Info: pr-LP05C . . . . . Engineered solutions for the transient environment SUBMINIATURE TVS SOT-23 APPLICATIONS USB Port Protection Cellular Phones Controller & Monitoring Systems Portable Electronics Wireless Bus Protection R Y ● ● ● ● ● IEC 61000-4 COMPATIBLE

Contextual Info: NLAS4624 Pr oduct Preview Low Voltage Single Supply SPDT Analog Switch The NLAS4624 is an advanced high speed CMOS single pole − double throw analog switch fabricated with silicon gate CMOS technology. It achieves high speed propagation delays and low ON