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    PR2004 Price and Stock

    Diodes Incorporated PR2004-T

    DIODE GEN PURP 400V 2A DO15
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PR2004-T Reel
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    Diodes Incorporated PR2004G-T

    DIODE GEN PURP 400V 2A DO15
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PR2004G-T Reel 4,000
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    • 10000 $0.08377
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    World Products Inc PR2004TA

    PR2004TA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical PR2004TA 11,730 510
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    • 1000 $0.1575
    • 10000 $0.0369
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    NAC PR2004TA 2,000
    • 1 $0.06
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    • 100 $0.06
    • 1000 $0.036
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    Master Electronics PR2004TA 12,000
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    • 10000 $0.0302
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    World Products Inc PR2004

    PR2004
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    Verical PR2004 9,600 600
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    • 10000 $0.0397
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    Onlinecomponents.com PR2004 9,950
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    • 10000 $0.0305
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    Master Electronics PR2004 9,950
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    • 1000 $0.0951
    • 10000 $0.0305
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    World Products Inc PR2004G

    PR2004G
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical PR2004G 5,000 250
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    • 1000 $0.1901
    • 10000 $0.0902
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    NAC PR2004G 800
    • 1 $0.14
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    • 100 $0.14
    • 1000 $0.088
    • 10000 $0.088
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    Master Electronics PR2004G 5,000
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    • 1000 $0.1462
    • 10000 $0.0694
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    Find more PR2004 price and stock on Findchips.com

    PR2004 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PR2004 Diodes Incorporated Short Form Selection Guide Original PDF
    PR2004 Diodes Incorporated 2.0A FAST RECOVERY RECTIFIER Original PDF
    PR2004 Diodes Incorporated 2.0 A Fast Recovery Rectifier Original PDF
    PR2004 Lite-On Technology 400V, 2.0A fast recovery rectifier Original PDF
    PR2004 Vishay Fast Rectifier (trr less than 500nsec) Original PDF
    PR2004G Diodes Incorporated Short Form Selection Guide Original PDF
    PR2004G Diodes Incorporated 2.0A FAST RECOVERY GLASS PASSIVATED RECTIFIER Original PDF
    PR2004G Diodes Incorporated 2.0 A Fast Recovery Glass Passivated Rectifier Original PDF
    PR2004G Lite-On Technology 400V, 2.0A fast recovery glass passivated rectifier Original PDF
    PR2004G Vishay Fast Rectifier (trr less than 500nsec) Original PDF
    PR2004G-T Diodes Incorporated RECTIFIER FAST-RECOVERY SINGLE 2A 400V 80A-ifsm 1.3V-vf 150ns 5uA-ir DO-15 4K/REEL-13 Original PDF
    PR2004-T Diodes Incorporated RECTIFIER FAST-RECOVERY SINGLE 2A 400V 50A-ifsm 1.2V-vf 150ns 5uA-ir DO-15 4K/REEL-13 Original PDF

    PR2004 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SMD Transistors w04 sot-23

    Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
    Text: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.


    Original     		PDF represent9-14 SMD Transistors w04 sot-23 transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355

    Untitled

    Abstract: No abstract text available
    Text: LITE ON POWER SEMICONDUCTOR PR2001 thru PR2007 REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 2.0 Amperes FAST RECOVERY RECTIFIERS DO-15 FEATURES Fast switching for high efficiency Low cost Diffused junction Low reverse leakage current Low forward voltage drop


    Original     		PDF PR2001 PR2007 DO-15 DO-15 PR2004 PR2005 300us

    MUR1560 equivalent

    Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
    Text: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in


    Original     		PDF MBRD835L VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MUR1560 equivalent 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent

    1n5822 trr

    Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
    Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50

    OZ 9983

    Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
    Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —


    Original     		PDF MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45

    Diode 1N4007 DO-7 Rectifier Diode

    Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
    Text: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced


    Original     		PDF MBRM120ET3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 Diode 1N4007 DO-7 Rectifier Diode FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode

    smd marking 911 zener

    Abstract: d3g smd NPN Transistor smd code LY 83 marking codes transistors a8 sot-23 TRANSISTOR SMD MARKING CODE s2a 1045ct mosfet SOD-123 a18 W06* MARKING smd code KBJ 3580 6045pt
    Text: RETURN TO SHORT FORM TABLE OF CONTENTS ################################### RETURN TO SHORT FORM INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Short Form Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 September 1999 Specifications are subject to change without notice.


    Original     		PDF M5263B, ZMM5264B, ZMM5265B, ZMM5266B, ZMM5267B, ZMM56, ZMM62, ZMM68, ZMM75, smd marking 911 zener d3g smd NPN Transistor smd code LY 83 marking codes transistors a8 sot-23 TRANSISTOR SMD MARKING CODE s2a 1045ct mosfet SOD-123 a18 W06* MARKING smd code KBJ 3580 6045pt

    Untitled

    Abstract: No abstract text available
    Text: PR2001G - PR2007G 2.0A FAST RECOVERY GLASS PASSIVATED RECTIFIER Features • · · · · · · Glass Passivated Die Construction Diffused Junction Fast Switching for High Efficiency B A High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 80A Peak


    Original     		PDF PR2001G PR2007G J-STD-020C MIL-STD-202, DO-15 DS27005 PR2001G-T PR2002G-T

    CAT7105CA

    Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
    Text: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A


    Original     		PDF 5CE120C 5KE120CA 5CE120CA 5CE12A 5KE12A 5CE12C 5KE12CA 5CE12CA CAT7105CA mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al

    melf diode marking

    Abstract: A180-WLA RS503s SBR130S3 Schottky melf hall sensor 35l 5KE91A-B PR1005G-A GBPC3504L STPR2020CT
    Text: PCN PART NUMBER LISTING Part Number PCN Title Rel date Comments 1.5KE100A-B 1049 Lead-Free Lead Finish NOT RELEASED 1.5KE100A-T 1049 Lead-Free Lead Finish NOT RELEASED 1.5KE100CA-B 1049 Lead-Free Lead Finish NOT RELEASED 1.5KE100CA-T 1049 Lead-Free Lead Finish


    Original     		PDF 5KE100A-B 5KE100A-T 5KE100CA-B 5KE100CA-T 5KE10A-A 5KE10A-B 5KE10A-T 5KE10CA-B 5KE10CA-T 5KE110A-B melf diode marking A180-WLA RS503s SBR130S3 Schottky melf hall sensor 35l 5KE91A-B PR1005G-A GBPC3504L STPR2020CT

    PR2001

    Abstract: PR2002 PR2004 PR2005 DS-260
    Text: PR2001 - PR2005 2.0A FAST RECOVERY RECTIFIER Features • · · · · · Diffused Junction Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 50A Peak Low Reverse Leakage Current Plastic Material: UL Flammability


    Original     		PDF PR2001 PR2005 DO-15 MIL-STD-202, PR2002 PR2004 DS26010 PR2004 PR2005 DS-260

    PR2001

    Abstract: PR2002 PR2003 PR2004 PR2005 PR2006 PR2007
    Text: PR2001 thru PR2007 Compact Technology REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 2.0 Amperes FAST RECOVERY RECTIFIERS DO-15 FEATURES Fast switching for high efficiency Low cost Diffused junction Low reverse leakage current Low forward voltage drop


    Original     		PDF PR2001 PR2007 DO-15 DO-15 50Vdc 50ohmsf CTC0126 PR2002 PR2003 PR2004 PR2005 PR2006 PR2007

    PR2001

    Abstract: PR2002 PR2003 PR2004 PR2005 PR2006 PR2007
    Text: LITE-ON SEMICONDUCTOR PR2001 thru PR2007 REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 2.0 Amperes FAST RECOVERY RECTIFIERS DO-15 FEATURES Fast switching for high efficiency Low cost Diffused junction Low reverse leakage current Low forward voltage drop


    Original     		PDF PR2001 PR2007 DO-15 DO-15 PR2002 PR2003 PR2004 PR2005 PR2006 PR2007

    PR2001G

    Abstract: PR2002G PR2003G PR2004G PR2005G PR2006G PR2007G
    Text: PR2001G–PR2007G Vishay Lite–On Power Semiconductor 2.0A Fast Recovery Glass Passivated Rectifier Features D D D D Glass passivated die construction Diffused junction Fast switching for high efficiency High current capability and low forward voltage drop


    Original     		PDF PR2001G PR2007G PR2001G PR2002G PR2003G PR2004G PR2005G PR2006G D-74025 PR2002G PR2003G PR2004G PR2005G PR2006G PR2007G

    Untitled

    Abstract: No abstract text available
    Text: PR2001 - PR2005 2.0A FAST RECOVERY RECTIFIER Features • · · · · · Diffused Junction Fast Switching for High Efficiency B A High Current Capability and Low Forward Voltage Drop A Surge Overload Rating to 50A Peak Low Reverse Leakage Current Lead Free Finish, RoHS Compliant Note 4


    Original     		PDF PR2001 PR2005 DO-15 J-STD-020C MIL-STD-202, DS26010 PR2001-T

    stpr16

    Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
    Text: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •


    Original     		PDF MURB1620CT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 stpr16 MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode

    b2545 transistor

    Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface
    Text: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection


    Original     		PDF MBR2535CT, MBR2545CT MBR2545CT B2535, B2545 VHE205 VHE210 VHE215 VHE220 VHE2401 b2545 transistor TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface

    MR2835S equivalent

    Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
    Text: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		PDF MBR6045PT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MR2835S equivalent A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502

    PR2003

    Abstract: PR2001 PR2002 PR2004 PR2005 PR2005 liteon
    Text: PR2001–PR2005 Vishay Lite–On Power Semiconductor 2.0A Fast Recovery Rectifier Features D Diffused junction D Fast switching for high efficiency D High current capability and low forward voltage drop D Surge overload rating to 50A peak D Low reverse leakage current


    Original     		PDF PR2001 PR2005 PR2001 PR2002 PR2003 PR2004 D-74025 24-Jun-98 PR2003 PR2002 PR2004 PR2005 PR2005 liteon

    MUR1560 equivalent

    Abstract: 1N4936 equivalent MUR1100E equivalent 1N5404 equivalent MUR620CT equivalent mur420 equivalent MUR1620CT equivalent BYV19-45 MUR1660CT equivalent MUR1520 equivalent
    Text: Index and Cross Reference The following table represents an index and cross reference guide for all rectifier devices which are either manufactured directly by ON Semiconductor or for which ON Semiconductor manufactures a suitable equivalent. Where the ON


    Original     		PDF MR852 VHE1401 VHE1402 VHE1403 VHE1404 VHE205 VHE210 MUR1560 equivalent 1N4936 equivalent MUR1100E equivalent 1N5404 equivalent MUR620CT equivalent mur420 equivalent MUR1620CT equivalent BYV19-45 MUR1660CT equivalent MUR1520 equivalent

    mur1650

    Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
    Text: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and


    Original     		PDF MBRB1045 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 mur1650 T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount

    PR2001G

    Abstract: PR2007G 2006G
    Text: PR2001G - PR2007G 2.0A FAST RECOVERY GLASS PASSIVATED RECTIFIER Features • · · · · Glass Passivated Die Construction Fast Switching for High Efficiency Surge Overload Rating to 80A Peak B A Lead Free Finish, RoHS Compliant Note 4 C Mechanical Data ·


    Original     		PDF PR2001G PR2007G DO-15 MIL-STD-202, J-STD-020C DS27005 PR2007G 2006G

    PR2001

    Abstract: PR2001-T PR2002 PR2004 PR2005
    Text: PR2001 - PR2005 2.0A FAST RECOVERY RECTIFIER Features • · · · · Diffused Junction Fast Switching for High Efficiency B A Surge Overload Rating to 50A Peak A Low Reverse Leakage Current Lead Free Finish, RoHS Compliant Note 4 C D Mechanical Data · ·


    Original     		PDF PR2001 PR2005 DO-15 MIL-STD-202, J-STD-020C DS26010 PR2001-T PR2002 PR2004 PR2005

    Untitled

    Abstract: No abstract text available
    Text: PR2001G-PR2007G Vishay Lite-On Power Semiconductor ▼ 2.0A Fast Recovery Glass Passivated Rectifier Features • G lass passivated die construction • Diffused junction • Fast sw itching fo r high efficiency • High current capability and low forw ard


    OCR Scan     		PDF PR2001G-PR2007G PR2001G PR2002G PR2003G PR2004G PR2005G PR2006G PR2007G D-74025 24-Jun-98